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Mohamed Boutchich
Dr Boutchich Mohamed
Associate Professor in Electrical Engineering
Sorbonne University
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Documents
Affiliations actuelles
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Electronic properties of CVD Graphene capped with p and n-type doped amorphous silicon26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany
Communication dans un congrès
hal-01232115v1
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