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227 résultats
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Impact of channel length on the operation of junctionless transistors with substrate biasingIEEE Transactions on Electron Devices, 2021, 68 (6), pp.3070-3073. ⟨10.1109/TED.2021.3069936⟩
Article dans une revue
hal-03194757v1
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Interface and strain effects on the fabrication of suspended CVD graphene devicesSolid-State Electronics, 2015, 108, pp.75-83. ⟨10.1016/j.sse.2014.12.003⟩
Article dans une revue
hal-01585691v1
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Low temperature characterization of mobility in advanced FD-SOI n-MOSFETs under interface coupling conditions2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Apr 2014, Stockholm, Sweden. pp.61-64, ⟨10.1109/ULIS.2014.6813906⟩
Communication dans un congrès
hal-01182148v1
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Sensitivity of silicon nanowire biochemical sensorsF. Balestra. Beyond CMOS Nanodevices 1, Wiley-ISTE, pp.43-64, 2014, Nanoscience and nanotechnology series, 978-1-84821-654-9, 978-1-11898-477-2. ⟨10.1002/9781118984772.ch3⟩
Chapitre d'ouvrage
hal-01059156v1
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Pixel analysis of a force-sensing device based on individually contacted vertical piezoelectric nanowires2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), Jul 2015, Rome, Italy. pp.1555-1558, ⟨10.1109/NANO.2015.7388943⟩
Communication dans un congrès
hal-02067303v1
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Low temperature characterization of 14nm FDSOI CMOS devices2014 11th International Workshop on Low Temperature Electronics (WOLTE), Jul 2014, Grenoble, France. pp.29-32, ⟨10.1109/WOLTE.2014.6881018⟩
Communication dans un congrès
hal-02049067v1
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Nano-générateurs piézoélectriques pour les capteurs autonomes2014
Autre publication scientifique
hal-02071162v1
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Development and characterization of flexible/non-flexible energy transducers based on ZnO nanowiresJournées Nationales des Nanofils Semiconducteurs, J2N, Nov 2017, Grenoble, France
Communication dans un congrès
hal-02070963v1
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Nanonets semiconducteurs: de la conception à l'intégration en dispositifs électroniques pour la détection de biomoléculesJournées Nationales des Nanofils Semiconducteurs (J2N 2017), Nov 2017, Grenoble, France
Communication dans un congrès
hal-02016901v1
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Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersionSolid-State Electronics, 2018, 143, pp.83-89. ⟨10.1016/j.sse.2017.11.013⟩
Article dans une revue
hal-01948032v1
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Performance Optimization of Vertical Nanowire-Based Piezoelectric NanogeneratorsJournal of Energy and Power Engineering, 2013, 7, pp.1816-1820
Article dans une revue
hal-01002254v1
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Modeling of semiconducting piezoelectric nanowires for mechanical energy harvesting and mechanical sensingNano Energy, 2015, 14, pp.62-76. ⟨10.1016/j.nanoen.2014.11.035⟩
Article dans une revue
hal-01986541v1
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Simulation and automated characterisation of optimal load for flexible composite generators based on piezoelectric ZnO nanowires2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.173-176, ⟨10.1109/ULIS.2018.8354762⟩
Communication dans un congrès
hal-02016623v1
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Semiconducting nanonets: Design and integration into functional devices for multiple sensing applicationsJournées de la Matière Condensée (JMC 2018), SFP, Aug 2018, Grenoble, France
Communication dans un congrès
hal-01981218v1
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2D TCAD strain simulations from fully depleted to nanowire transistors: efficiency of mechanical stressorsGRDi CNRS Mecano: Mechanical Issues for Advanced Electron Devices Workshop, M. Mouis, O. Thomas, E. Zschech, C. Paitel, Jun 2015, Grenoble, France
Communication dans un congrès
hal-02068482v1
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A Simple Method for Estimation of Silicon Film Thickness in Tri-Gate Junctionless TransistorsIEEE Electron Device Letters, 2018, 39 (9), pp.1282-1285. ⟨10.1109/LED.2018.2857623⟩
Article dans une revue
hal-01948046v1
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Series resistance in different operation regime of junctionless transistorsSolid-State Electronics, 2018, 141, pp.92-95. ⟨10.1016/j.sse.2017.12.013⟩
Article dans une revue
hal-01948025v1
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Grain boundaries in transition metal dichalcogenides: Electron transport propertiesAnnual meeting of the GDRi Graphene & Co, Oct 2019, Bad Herrenalb, Germany
Communication dans un congrès
hal-02332250v1
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Impact of WSix Metal Gate Stoichiometry on Fully Depleted SOI MOSFETs Electrical PropertiesInternational Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), 2006, Taiwan, Taiwan. pp.117-118
Communication dans un congrès
hal-00147166v1
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Performance optimization of vertical Nanowire based Piezoelectric NanogeneratorsAdvanced Functional Materials, 2014, 24 (7), pp.971-977. ⟨10.1002/adfm.201302157⟩
Article dans une revue
istex
hal-01017420v1
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Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistorsSolid-State Electronics, 2013, 81, pp.101-104. ⟨10.1016/j.sse.2012.12.003⟩
Article dans une revue
istex
hal-01002104v1
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Full-3D real-space simulation of surface-roughness effects in double gate MOSFETsProceedings of IWCE 2009, IEEE Conference Proceedings CFP09462-PRT, ISBN 978-1-4244-3926-3, May 2009, Beijing, China. pp.309-312
Communication dans un congrès
hal-00603871v1
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Simulations multi-échelles du transport quantique dans les DGMOS et dans les dispositifs résonnantsJournées "Simulation et caractérisation des nanocomposants" du GDR Nanoélectronique, 2006, GRENOBLE, France. pp.XX
Communication dans un congrès
hal-00148283v1
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AFM measurement of Young modulus and piezoelectricity on individual nanostructuresWorkshop on ``New trends in Electrical Scanning Probe Microscopies'', Oct 2010, Grenoble, France
Communication dans un congrès
hal-00604966v1
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Multiphysics modeling of vertically integrated nanogenerators in compression and flexion modes4èmes Journées Nationales sur la Récupération d'Energie et le Stockage d'Energie (JNRSE 0214), Apr 2014, Annecy, France
Communication dans un congrès
hal-02067748v1
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Optimization of dielectric matrix for ZnO nanowire based nanogenerators16th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS 2016), Dec 2016, Paris, France
Communication dans un congrès
hal-02067737v1
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Towards a force-displacement sensor based on vertical ZnO piezoelectric nanowiresThe International Nanotechnology & Nanoscience Conference & Exhibiltion (Nanotech 2015), Jun 2015, Paris, France
Communication dans un congrès
hal-02067825v1
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Mechanical simulation of stress engineering solutions in highly strained p-type FDSOI MOSFETs for 14-nm node and beyond2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2015, Washington DC, United States. pp.206-209, ⟨10.1109/SISPAD.2015.7292295⟩
Communication dans un congrès
hal-02016552v1
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Multiphysics modeling of thin piezoelectric transducers integrated in flexible substrates2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Apr 2014, Stockholm, Sweden. pp.77-80, ⟨10.1109/ULIS.2014.6813910⟩
Communication dans un congrès
hal-02016449v1
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ZnO nanonets: functional nanomateials designed for electrical detectionEuropean Congress and Exhibit on Advanced Materials and Processes (EUROMAT 2017), symposium A.7: Functional Nanomaterials for Novel Applications, P. Fernandez, A. Cremades, O. Rader and P. Schaff, Sep 2017, Thessalonique, Greece
Communication dans un congrès
hal-02016909v1
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