Documentation
Français (FR)

Anglais (EN)

Mihai Lazar

21

Documents

Présentation

Publications

marie-laure-locatelli

	Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers Mihai Lazar , Christophe Raynaud , Dominique Planson , Jean-Pierre Chante , Marie-Laure Locatelli Journal of Applied Physics, 2003, 94 (5), pp.2992-2998 Article dans une revue hal-00140110v1
	Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization K. Isoird , Mihai Lazar , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson Materials Science Forum, 2002, 389-393, pp.1289-1292. ⟨10.4028/www.scientific.net/MSF.389-393.1289⟩ Article dans une revue hal-02151720v1
	Characteristics of aluminum-implanted 6H-SiC samples after different thermal treatments Laurent Ottaviani , Mihai Lazar , Marie-Laure Locatelli , Dominique Planson , Jean-Pierre Chante Materials Science and Engineering: B, 2002, 90 (3), pp.301-308. ⟨10.1016/S0921-5107(02)00002-8⟩ Article dans une revue hal-00140116v1
	Annealing Studies of Al-implanted 6H-SiC in an Induction Furnace L. Ottaviani , M. Lazar , Marie-Laure Locatelli , J.P. Chante , V. Heera Materials Science and Engineering: B, 2002, 91-92, pp.325-328 Article dans une revue hal-00084105v1
	A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects Mihai Lazar , Christophe Raynaud , Dominique Planson , Marie-Laure Locatelli , K. Isoird Materials Science Forum, 2002, 389-393, pp.827-830. ⟨10.4028/www.scientific.net/MSF.389-393.827⟩ Article dans une revue hal-02151714v1
	High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson Materials Science Forum, 2001, 353-356, pp.571-574. ⟨10.4028/www.scientific.net/MSF.353-356.571⟩ Article dans une revue hal-02151710v1
	Study of 6H-SiC high voltage bipolar diodes under reverse biases Karine Isoird , Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud Applied Surface Science, 2001, 184 (1-4), pp.477-482. ⟨10.1016/S0169-4332(01)00537-2⟩ Article dans une revue hal-00140118v1
	Investigation of Al-implanted 6H-and 4H-SiC layers after fast heating rate annealings Laurent Ottaviani , Mihai Lazar , Marie-Laure Locatelli , Yves Monteil , V. Heera Applied Surface Science, 2001, 184 (1-4), pp.330-335 Article dans une revue hal-00141498v1
	Experimental characterization of a 4H-SiC high voltage current limiting device F. Nallet , Dominique Planson , Philippe Godignon , Marie-Laure Locatelli , Mihai Lazar Applied Surface Science, 2001, 184 (1-4), pp.404-407 Article dans une revue hal-00140117v1
	Improved Annealing Process for 6H-SiC p⁺-n Junction Creation by Al Implantation Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Dominique Planson , Bruno Canut Materials Science Forum, 2000, 338-342, pp.921-924. ⟨10.4028/www.scientific.net/MSF.338-342.921⟩ Article dans une revue hal-02275720v1

	Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage Sombel Diaham , Marie-Laure Locatelli , Thierry Lebey , Christophe Raynaud , Mihai Lazar CSCRM, Sep 2008, Barcelone, Spain. pp.695-698, ⟨10.4028/www.scientific.net/MSF.615-617.695⟩ Communication dans un congrès hal-00391472v1
	Electrothermal simulations of silicon carbide current limiting devices Dominique Planson , J.P. Chante , M. Lazar , P. Brosselard , Christophe Raynaud 2003 IEEE International Conference on Industrial Technology, Dec 2003, Maribor, Slovenia. pp.1135-1140, ⟨10.1109/ICIT.2003.1290823⟩ Communication dans un congrès hal-02498210v1
	Silicon Carbide specific components for power electronics system protection J.-P Chante , Dominique Planson , Christophe Raynaud , Marie-Laure Locatelli , M. Lazar International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France Communication dans un congrès hal-02503449v1
	Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC Roberta Nipoti , Francesco Moscatelli , Andrea Scorzoni , Antonella Poggi , Gian Carlo Cardinali 2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K6.2⟩ Communication dans un congrès hal-02485106v1
	Experimental characterization of a 4H-SiC high voltage current limiting device Franck Nallet , Dominique Planson , Philippe Godignon , Marie-Laure Locatelli , Mihai Lazar European Materials Society (E-MRS Spring Meeting) 2001, symposium F, Jun 2001, Strasbourg, France Communication dans un congrès hal-03714731v1
	4H-SiC bipolar power diodes realized by ion implantation M. Lazar , Dominique Planson , K. Isoird , Marie-Laure Locatelli , Christophe Raynaud CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.349-352, ⟨10.1109/SMICND.2001.967481⟩ Communication dans un congrès hal-02145397v1
	A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects M. Lazar , Christophe Raynaud , Dominique Planson , Marie-Laure Locatelli , K. Isoird ICSCRM, Oct 2001, Tsukuba, Japan Communication dans un congrès hal-02476227v1
	Study of 6H-SiC high voltage bipolar diodes under reverse biases Karine Isoird , Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud European Materials Research Society (E-MRS Spring Meeting) 2001, Jun 2001, Strasbourg, France Communication dans un congrès hal-03712596v1
	Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterization K Isoird , M Lazar , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson ICSCRM, Oct 2001, Tsukuba, Japan Communication dans un congrès hal-02975956v1
	Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing Mihai Lazar , Karine Isoird , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud 43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States Communication dans un congrès hal-02275712v1
	High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000), Sep 2000, Kloster Banz, Germany. pp.MoP-72 Communication dans un congrès hal-02151711v1