- 3
- 1
- 1
Mihai Lazar
5
Documents
Présentation
Dr. Mihai Lazar, CNRS Permanent Researcher HDR, WBG material - semiconductor technology specialist, a former member of the AMPERE lab, joined the L2n in sept 2018, developing these years a new SiC platform based on skills and means of the L2n and ESIEE cleanrooms.
Mihai Lazar received engineering and Ph.D.degrees from INSA, Lyon, France, in 1998 and 2002, respectively. In 2002, he joined the Ampere Laboratory (formerly named CEGELY), as a CNRS Researcher, focusing on power and high-temperature integrated systems based on wide bandgap materials as SiC. His strong experience in SiC technology was also successfully applied in the realization of SiC-based sensors as UV optical, radiation, and bio-detectors. He has authored or co-authored over 90 articles in refereed journal and in international conference proceedings.
Publications
- 5
- 3
- 2
- 2
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 2
- 2
- 1
|
A Study on the Chemistry of Epitaxial Ti3SiC2 Formation on 4H-SiC Using Al-Ti AnnealingMaterials Science Forum, 2015, 821-823, pp.432-435. ⟨10.4028/www.scientific.net/MSF.821-823.432⟩
Article dans une revue
hal-01391858v1
|
Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealingApplied Surface Science, 2015, 347, pp.186 - 192. ⟨10.1016/j.apsusc.2015.04.077⟩
Article dans une revue
hal-01391845v1
|
|
|
The role of nickel and titanium in the formation of ohmic contacts on p-type 4H–SiCSemiconductor Science and Technology, 2013, 28 (4), ⟨10.1088/0268-1242/28/4/045007⟩
Article dans une revue
hal-01627844v1
|
|
Nouveaux contacts électriques sur SiC-4H de type p : réalisation de phases MAXSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès
hal-01065327v1
|
|
On the chemistry of epitaxial Ti3SiC2 formation on 4H-SiC using Al-Ti annealingECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-63
Communication dans un congrès
hal-02428741v1
|