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Mihai Lazar
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Documents
Présentation
Dr. Mihai Lazar, CNRS Permanent Researcher HDR, WBG material - semiconductor technology specialist, a former member of the AMPERE lab, joined the L2n in sept 2018, developing these years a new SiC platform based on skills and means of the L2n and ESIEE cleanrooms.
Mihai Lazar received engineering and Ph.D.degrees from INSA, Lyon, France, in 1998 and 2002, respectively. In 2002, he joined the Ampere Laboratory (formerly named CEGELY), as a CNRS Researcher, focusing on power and high-temperature integrated systems based on wide bandgap materials as SiC. His strong experience in SiC technology was also successfully applied in the realization of SiC-based sensors as UV optical, radiation, and bio-detectors. He has authored or co-authored over 90 articles in refereed journal and in international conference proceedings.
Publications
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Analytical modelling of a lateral dual gate MESFET for integrated circuit in SiCRomanian Journal of Information Science and Technology, 2019, 22 (2), pp.103-110
Article dans une revue
hal-02405784v1
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Silicon Carbide Technology of MESFET-Based Power Integrated CircuitsIEEE Journal of Emerging and Selected Topics in Power Electronics, 2018, 6 (2), pp.539 - 548. ⟨10.1109/JESTPE.2017.2778002⟩
Article dans une revue
hal-01864533v1
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SiC lateral Schottky diode technology for integrated smart power converter2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352287⟩
Communication dans un congrès
hal-01864545v1
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First steps of SiC integrated electronic functions for a smart power driver dedicated to harsh environmentsCAS, Oct 2017, Sinaia, Romania. ⟨10.1109/SMICND.2017.8101191⟩
Communication dans un congrès
hal-01646319v1
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