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Mihai Lazar

32
Documents

Présentation

Dr. Mihai Lazar, CNRS Permanent Researcher HDR, WBG material - semiconductor technology specialist, a former member of the AMPERE lab, joined the L2n in sept 2018, developing these years a new SiC platform based on skills and means of the L2n and ESIEE cleanrooms. Mihai Lazar received engineering and Ph.D.degrees from INSA, Lyon, France, in 1998 and 2002, respectively. In 2002, he joined the Ampere Laboratory (formerly named CEGELY), as a CNRS Researcher, focusing on power and high-temperature integrated systems based on wide bandgap materials as SiC. His strong experience in SiC technology was also successfully applied in the realization of SiC-based sensors as UV optical, radiation, and bio-detectors. He has authored or co-authored over 90 articles in refereed journal and in international conference proceedings.

Publications

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Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters

Selsabil Sejil , Loïc Lalouat , Mihai Lazar , Davy Carole , Christian Brylinski
Materials Science Forum, 2017, 897, pp.63 - 66. ⟨10.4028/www.scientific.net/MSF.897.63⟩
Article dans une revue hal-01648360v1

Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions

Gabriel Ferro , Selsabil Sejil , Mihai Lazar , D. Carole , C. Brylinski
physica status solidi (a), 2017, 214 (4), ⟨10.1002/pssa.201600454⟩
Article dans une revue hal-01615190v1
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A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase

Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Christophe Raynaud
IEEE Transactions on Electron Devices, 2016, 63 (6), pp.2462-2468. ⟨10.1109/TED.2016.2556725⟩
Article dans une revue hal-01387992v1
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Optimization of VLS Growth Process for 4H-SiC P/N Junctions

Selsabil Sejil , Mihai Lazar , Frédéric Cayrel , Davy Carole , Christian Brylinski
Materials Science Forum, 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩
Article dans une revue hal-01388031v1
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Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti3SiC2 Phase

Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Christophe Raynaud
Materials Science Forum, 2016, 858, pp.553-556. ⟨10.4028/www.scientific.net/MSF.858.553⟩
Article dans une revue hal-01388027v1
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VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures

Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski
Materials Science Forum, 2015, 821-823, pp.789 - 792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩
Article dans une revue hal-01387983v1
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A Study on the Chemistry of Epitaxial Ti3SiC2 Formation on 4H-SiC Using Al-Ti Annealing

Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Berangère Toury
Materials Science Forum, 2015, 821-823, pp.432-435. ⟨10.4028/www.scientific.net/MSF.821-823.432⟩
Article dans une revue hal-01391858v1

Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport

Arthur Vo-Ha , Mickael Rebaud , Mihai Lazar , Alexandre Tallaire , Véronique Soulière
Materials Science Forum, 2014, 806, pp.33 - 37. ⟨10.4028/www.scientific.net/MSF.806.33⟩
Article dans une revue hal-01391865v1
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Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts

Nicolas Thierry-Jebali , Mihai Lazar , A. Vo-Ha , D. Carole , V. Soulière
Materials Science Forum, 2014, Silicon Carbide and Related Materials 2013, ⟨10.4028/www.scientific.net/MSF.778-780.639⟩
Article dans une revue hal-01987147v1

Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport

Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry-Jebali
Materials Science Forum, 2013, 740-742, pp.177-180. ⟨10.4028/www.scientific.net/MSF.740-742.177⟩
Article dans une revue hal-00803058v1

Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport

N. Thierry-Jebali , A. Vo-Ha , D. Carole , Mihai Lazar , Gabriel Ferro
Applied Physics Letters, 2013, 102 (21), ⟨10.1063/1.4809570⟩
Article dans une revue hal-01627796v1

Electrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport

Nicolas Thierry-Jebali , Mihai Lazar , Arthur Vo Ha , Davy Carole , Véronique Soulière
Materials Science Forum, 2013, 740-742, pp.911 - 914. ⟨10.4028/www.scientific.net/MSF.740-742.911⟩
Article dans une revue hal-01627792v1

p-Doped SiC Growth on Diamond Substrate by VLS Transport

Arthur Vo Ha , Davy Carole , Mihai Lazar , Dominique Tournier , François Cauwet
Materials Science Forum, 2013, 740-742, pp.331 - 334. ⟨10.4028/www.scientific.net/MSF.740-742.331⟩
Article dans une revue hal-01627777v1

Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport

A. Vo-Ha , D. Carole , Mihai Lazar , Dominique Tournier , F. Cauwet
Thin Solid Films, 2013, 548, pp.125 - 129. ⟨10.1016/j.tsf.2013.09.030⟩
Article dans une revue hal-01627830v1

Study of the lateral growth by VLS mechanism using Al-based melts on patterned SiC substrate

Jean Lorenzzi , Romain Esteve , Mihai Lazar , Dominique Tournier , Davy Carole
Materials Science Forum, 2012, 717-720, pp.165-168. ⟨10.4028/www.scientific.net/MSF.717-720.165⟩
Article dans une revue hal-00803063v1

Buried selective growth of p-doped SiC by VLS epitaxy

Davy Carole , Stéphane Berckmans , Arthur Vo-Ha , Mihai Lazar , Dominique Tournier
Materials Science Forum, 2012, 717-720, pp.169-172. ⟨10.4028/www.scientific.net/MSF.717-720.169⟩
Article dans une revue hal-00803061v1

Improvement of 4H–SiC selective epitaxial growth by VLS mechanism using Al and Ge-based melts

Maher Soueidan , Gabriel Ferro , Christophe Jacquier , Philippe Godignon , J. Pezoldt
Diamond and Related Materials, 2007, 16, pp.37-45. ⟨10.1016/j.diamond.2006.03.015⟩
Article dans une revue hal-00188186v1
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Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy

Selsabil Sejil , Loïc Lalouat , Mihai Lazar , Davy Carole , Christian Brylinski
ECSCRM'16, Sep 2016, Halkidiki, Greece
Communication dans un congrès hal-02138729v1
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Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

Mihai Lazar , Davy Carole , Christophe Raynaud , Gabriel Ferro , Selsabil Sejil
CAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩
Communication dans un congrès hal-01388019v1
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Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N Junctions

Selsabil Sejil , Mihai Lazar , Davy Carole , Christian Brylinski , Dominique Planson
Semiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States
Communication dans un congrès hal-02428659v1
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4H-SiC P-N junctions realized by VLS for JFET lateral structures

Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61
Communication dans un congrès hal-02133686v1
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On the chemistry of epitaxial Ti3SiC2 formation on 4H-SiC using Al-Ti annealing

Tony Abi Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Bérangère Toury
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-63
Communication dans un congrès hal-02428741v1
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Nouveaux contacts électriques sur SiC-4H de type p : réalisation de phases MAX

Tony Abi Tannous , Maher Soueidan , Gabriel Ferro , Berangere Toury-Pierre , Mihai Lazar
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès hal-01065327v1

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

Nicolas Thierry-Jebali , Arthur Vo-Ha , Davy Carole , Mihai Lazar , Gabriel Ferro
HeteroSiC-WASMPE, Jun 2013, Nice, France. pp.57 - 60, ⟨10.4028/www.scientific.net/MSF.806.57⟩
Communication dans un congrès hal-01391861v1

3C-SiC Seeded Growth on Diamond Substrate by VLS Transport

Arthur Vo-Ha , Mickael Rebaud , Davy Carole , Mihai Lazar , Alexandre Tallaire
ICSCRM 2013, Sep 2013, Miyazaki, Japan. pp.234-237, ⟨10.4028/www.scientific.net/MSF.778-780.234⟩
Communication dans un congrès hal-02875458v1
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Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport

Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry Thierry-Jebali
ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès hal-04362529v1

p-type SiC growth on diamond substrate by VLS Transport

Arthur Vo-Ha , Davy Carole , Mihai Lazar , D. Tournier , François Cauwet
ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 2p
Communication dans un congrès hal-04423301v1

Elimination of twin boundaries when growing 3C-SiC heteroepitaxial by vapour-liquid-solid mechanism on patterned 4H-SiC substrate

Jean Lorenzzi , Nicoletta Jegenyes , Mihai Lazar , Dominique Tournier , Davy Carole
HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.11-15, ⟨10.4028/www.scientific.net/MSF.711.11⟩
Communication dans un congrès hal-00747669v1

Study of the lateral growth by VLS mechanism using Al-based melts on patterned SiC substrate

Jean Lorenzzi , Romain Esteve , Mihai Lazar , Dominique Tournier , Davy Carole
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès hal-00747299v1

Buried selective growth of p-doped SiC by VLS epitaxy

Davy Carole , Stéphane Berckmans , Arthur Vo-Ha , Mihai Lazar , Dominique Tournier
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès hal-00747294v1

Investigation of 3C-SiC lateral growth on 4H-SiC MESAs

Jean Lorenzzi , Nikoletta Jegenyes , Mihai Lazar , Dominique Tournier , Francois Cauwet
CSCRM, 2010, Oslo, Norway. pp.111-114, ⟨10.4028/www.scientific.net/MSF.679-680.111⟩
Communication dans un congrès hal-00786369v1

Improvement of 4H-SiC selective epitaxial growth by VLS mechanism using Al and Ge based melts

Gabriel Ferro , Maher Soueidan , Christophe Jacquier , Philippe Godignon , Th Stauden
CSCRM, Sep 2005, Pittsburgh, PA, United States. pp.275-278, ⟨10.4028/www.scientific.net/MSF.527-529.275⟩
Communication dans un congrès hal-00391581v1