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Mihai Lazar
119
Documents
Présentation
Dr. Mihai Lazar, CNRS Permanent Researcher HDR, WBG material - semiconductor technology specialist, a former member of the AMPERE lab, joined the L2n in sept 2018, developing these years a new SiC platform based on skills and means of the L2n and ESIEE cleanrooms.
Mihai Lazar received engineering and Ph.D.degrees from INSA, Lyon, France, in 1998 and 2002, respectively. In 2002, he joined the Ampere Laboratory (formerly named CEGELY), as a CNRS Researcher, focusing on power and high-temperature integrated systems based on wide bandgap materials as SiC. His strong experience in SiC technology was also successfully applied in the realization of SiC-based sensors as UV optical, radiation, and bio-detectors. He has authored or co-authored over 90 articles in refereed journal and in international conference proceedings.
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CREATION D’UNE FENETRE DE SORTIE DE RAYONNEMENT POUR UN COMPOSANT PHOTOEMETTEURFrance, N° de brevet: FR2201067. 2022
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FABRICATION D’UN COMPOSANT EMETTEUR DE RAYONNEMENT A PARTIR D’UN SUBSTRAT DE CARBURE DE SILICIUMFrance, N° de brevet: FR2201064. 2022
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Design and Characterization of an Optical 4H-SiC Bipolar Junction TransistorICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès
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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩
Communication dans un congrès
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Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical IntegrationIEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩
Communication dans un congrès
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters20th International Conference on Silicon Carbide and Related Materials (ICSCRM) - ICSCRM 2023, Naples University - Federico II, Sep 2023, Sorrento, Italy
Communication dans un congrès
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Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩
Communication dans un congrès
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Enhanced Resonant Raman scattering of GaN functional layers using Al thin films -a versatile tool for multilayer structure analysisECSCRM2020-2021, Oct 2021, Tours, France
Communication dans un congrès
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SiC lateral Schottky diode technology for integrated smart power converter2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352287⟩
Communication dans un congrès
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Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxyECSCRM'16, Sep 2016, Halkidiki, Greece
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Realization and characterization of carbonic layers on 4H-SiC for electrochemical detectionsECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52
Communication dans un congrès
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Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phaseICSCRM, Oct 2015, Giardini Naxos, Italy
Communication dans un congrès
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Vertical termination filled with adequate dielectric for SiC devices in HVDC applicationsInternational Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy
Communication dans un congrès
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Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N JunctionsSemiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States
Communication dans un congrès
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Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devicesCAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩
Communication dans un congrès
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4H-SiC VJFETs with Self-Aligned ContactsECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75
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4H-SiC P-N junctions realized by VLS for JFET lateral structuresECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61
Communication dans un congrès
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Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBICSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès
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On the chemistry of epitaxial Ti3SiC2 formation on 4H-SiC using Al-Ti annealingECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-63
Communication dans un congrès
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Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspectsCAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩
Communication dans un congrès
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Nouveaux contacts électriques sur SiC-4H de type p : réalisation de phases MAXSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès
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Influence of process parameters on electrical properties of PiN diodes fabricated with a highly p-type doped layer selectively grown by VLS transportInternational Conference on Silicon Carbide and Related Materials ICSCRM 2013, Sep 2013, Miyazaki, Japan
Communication dans un congrès
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Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS TransportECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès
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p-type SiC growth on diamond substrate by VLS TransportECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 2p
Communication dans un congrès
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Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiCHeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.169-173, ⟨10.4028/www.scientific.net/MSF.711.169⟩
Communication dans un congrès
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600 V PiN diodes fabricated using on-axis 4H silicon carbideInternational Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), Sep 2011, Cleveland, United States. pp.969-972, ⟨10.4028/www.scientific.net/MSF.717-720.969⟩
Communication dans un congrès
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Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristicsWOCSDICE, May 2011, Catania, Italy. pp.181
Communication dans un congrès
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OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficientsCSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès
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Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviourHeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.114-117, ⟨10.4028/www.scientific.net/MSF.711.114⟩
Communication dans un congrès
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SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurementsICSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès
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Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature ApplicationsCIMA, Mar 2011, Beyrouth, Lebanon. pp.CD
Communication dans un congrès
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4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processesCSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès
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Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface StateCSCRM, Aug 2010, Oslo, Norway. pp.477-480, ⟨10.4028/www.scientific.net/MSF.679-680.477⟩
Communication dans un congrès
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State of the art of High Temperature Power ElectronicsMicrotherm, Jun 2009, Lodz, Poland. pp.8-17
Communication dans un congrès
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Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2
Communication dans un congrès
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SiC Power Semiconductor Devices for new Applications in Power Electronics13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩
Communication dans un congrès
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Comparison of electrical properties of ohmic contact realized on p-type 4H-SiCICSCRM'2007, Oct 2007, Otsu, Japan
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Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiCCSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.611-614, ⟨10.4028/www.scientific.net/MSF.556-557.611⟩
Communication dans un congrès
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Deep SiC etching with RIEE-MRS 2006, May 2006, Nice, France. pp.3886392
Communication dans un congrès
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Towards an integrated inverter based on lateral JFET SiC4th CIPS, Jun 2006, Naples, Italy. pp.171-176
Communication dans un congrès
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Ni-Al Ohmic contact to p-type 4H-SiC2006 Spring Meeting of the European Materials Research Society (E-MRS 2006), May 2006, Nice, France. ⟨10.1016/j.spmi.2006.08.004⟩
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A 3.5 kV thyristor in 4H-SiC with a JTE peripheryEuropean Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy
Communication dans un congrès
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P-type SiC layers formed by VLS induced selective epitaxial growthEuropean Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy
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The role of the ion implanted emitter state on 6H-SiC power diodes behaviour. A statistical study.International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France
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Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristorInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
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Design and simulation of a planar anode GTO thyristor on SiCCAS (International Semiconductor Conference), Sep 2003, Sinaia, Romania. pp.222, ⟨10.1109/SMICND.2003.1252421⟩
Communication dans un congrès
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SiC-based current limiter devicesInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. pp.951-956, ⟨10.4028/www.scientific.net/MSF.457-460.951⟩
Communication dans un congrès
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Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extensionInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès
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Silicon Carbide specific components for power electronics system protectionInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
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Electrothermal simulations of silicon carbide current limiting devices2003 IEEE International Conference on Industrial Technology, Dec 2003, Maribor, Slovenia. pp.1135-1140, ⟨10.1109/ICIT.2003.1290823⟩
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OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral ExtensionEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Communication dans un congrès
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Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K6.2⟩
Communication dans un congrès
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Characterization of a 4H-SiC High Power Density Controlled Current LimiterEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Communication dans un congrès
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4H-SiC bipolar power diodes realized by ion implantationCAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.349-352, ⟨10.1109/SMICND.2001.967481⟩
Communication dans un congrès
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A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effectsICSCRM, Oct 2001, Tsukuba, Japan
Communication dans un congrès
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Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States
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Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterizationICSCRM, Oct 2001, Tsukuba, Japan
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Study of 6H-SiC high voltage bipolar diodes under reverse biasesEuropean Materials Research Society (E-MRS Spring Meeting) 2001, Jun 2001, Strasbourg, France
Communication dans un congrès
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Experimental characterization of a 4H-SiC high voltage current limiting deviceEuropean Materials Society (E-MRS Spring Meeting) 2001, symposium F, Jun 2001, Strasbourg, France
Communication dans un congrès
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High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF AnnealingEuropean Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000), Sep 2000, Kloster Banz, Germany. pp.MoP-72
Communication dans un congrès
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Optical Beam Induced Current Measurements: principles and applications to SiC device characterisationPeter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009
Chapitre d'ouvrage
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