Mihai Lazar

Documents

Présentation

Publications

christophe-raynaud-insa-lyon

	Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung Romanian Journal of Information Science and Technology, 2023, 26 (2), pp.193-204. ⟨10.59277/ROMJIST.2023.2.06⟩ Article dans une revue hal-04276812v1
	Analytical modelling of a lateral dual gate MESFET for integrated circuit in SiC Jean-François Mogniotte , Christophe Raynaud , Mihai Lazar , Loïc Michel Romanian Journal of Information Science and Technology, 2019, 22 (2), pp.103-110 Article dans une revue hal-02405784v1
	Silicon Carbide Technology of MESFET-Based Power Integrated Circuits Jean-François Mogniotte , Dominique Tournier , Christophe Raynaud , Mihai Lazar , Dominique Planson IEEE Journal of Emerging and Selected Topics in Power Electronics, 2018, 6 (2), pp.539 - 548. ⟨10.1109/JESTPE.2017.2778002⟩ Article dans une revue hal-01864533v1
	SiC integrated circuits for smart power converter J F Mogniotte , Mihai Lazar , Christophe Raynaud , Dominique Planson , B Allard Romanian Journal of Information Science and Technology, 2017, 20 (4), pp.385-399 Article dans une revue hal-04277111v1
	Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections Julien Pezard , Véronique Soulière , Mihai Lazar , Naoufel Haddour , François Buret Materials Science Forum, 2017, 897, pp.739 - 742. ⟨10.4028/www.scientific.net/MSF.897.739⟩ Article dans une revue hal-01644735v1
	Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p⁺⁺ Emitters Selsabil Sejil , Loïc Lalouat , Mihai Lazar , Davy Carole , Christian Brylinski Materials Science Forum, 2017, 897, pp.63 - 66. ⟨10.4028/www.scientific.net/MSF.897.63⟩ Article dans une revue hal-01648360v1
	Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions Gabriel Ferro , Selsabil Sejil , Mihai Lazar , D. Carole , C. Brylinski physica status solidi (a), 2017, 214 (4), ⟨10.1002/pssa.201600454⟩ Article dans une revue hal-01615190v1
	Optimization of VLS Growth Process for 4H-SiC P/N Junctions Selsabil Sejil , Mihai Lazar , Frédéric Cayrel , Davy Carole , Christian Brylinski Materials Science Forum, 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩ Article dans une revue hal-01388031v1
	A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Christophe Raynaud IEEE Transactions on Electron Devices, 2016, 63 (6), pp.2462-2468. ⟨10.1109/TED.2016.2556725⟩ Article dans une revue hal-01387992v1
	Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti₃SiC₂ Phase Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Christophe Raynaud Materials Science Forum, 2016, 858, pp.553-556. ⟨10.4028/www.scientific.net/MSF.858.553⟩ Article dans une revue hal-01388027v1
	VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski Materials Science Forum, 2015, 821-823, pp.789 - 792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩ Article dans une revue hal-01387983v1
	2D Electric field imagery in 4H-SiC power diodes using OBIC technique Hassan Hamad , Pascal Bevilacqua , Dominique Planson , Christophe Raynaud , Dominique Tournier European Physical Journal: Applied Physics, 2015, Electrical Engineering Symposium (SGE 2014), 72 (2), pp.20101. ⟨10.1051/epjap/2015150054⟩ Article dans une revue hal-01387989v1
	P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices Mihai Lazar , Selsabil Sejil , L. Lalouat , Christophe Raynaud , D. Carole Romanian Journal of Information Science and Technology, 2015, 18 (4), pp.329-342 Article dans une revue hal-01626119v1
	OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients Duy Minh Nguyen , Christophe Raynaud , Mihai Lazar , Gontran Pâques , Sigo Scharnholz Materials Science Forum, 2012, 717-720, pp.545-548. ⟨10.4028/www.scientific.net/MSF.717-720.545⟩ Article dans une revue hal-00803059v1
	SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements Mihai Lazar , François Jomard , Duy Minh M Nguyen , Christophe Raynaud , Gontran Pâques Materials Science Forum, 2012, 717-720, pp.885-888. ⟨10.4028/www.scientific.net/MSF.717-720.885⟩ Article dans une revue hal-02166414v1
	Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel Advanced Materials Research, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩ Article dans une revue hal-00799902v1
	State of the art of high temperature power electronics Cyril Buttay , Dominique Planson , Bruno Allard , Dominique Bergogne , Pascal Bevilacqua Materials Science and Engineering: B, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩ Article dans une revue hal-00597432v1
	Experimental determination of impact ionization coefficients in 4H-SiC Duy Minh Nguyen , Christophe Raynaud , Nicolas Dheilly , Mihai Lazar , Dominique Tournier Diamond and Related Materials, 2011, 20 (3), pp.395-397. ⟨10.1016/j.diamond.2011.01.039⟩ Article dans une revue hal-00661429v1
	Composants de puissance en SiC. Etat de l'art Dominique Planson , Christophe Raynaud , Pierre Brosselard , Dominique Bergogne , Mihai Lazar European Journal of Electrical Engineering, 2006, 9 (4-5), pp.595-611 Article dans une revue hal-04371563v1
	P-type SiC layers formed by VLS induced selective epitaxial growth Mihai Lazar , Christophe Jacquier , Christiane Dubois , Christophe Raynaud , Gabriel Ferro Materials Science Forum, 2005, 483-485, pp.633-636. ⟨10.4028/www.scientific.net/MSF.483-485.633⟩ Article dans une revue hal-04362494v1
	OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension S.R. Wang , Christophe Raynaud , Dominique Planson , Mihai Lazar , Jean-Pierre Chante Materials Science Forum, 2003, 433-436, pp.863-866. ⟨10.4028/www.scientific.net/MSF.433-436.863⟩ Article dans une revue hal-04091213v1
	Barrier height determination of SiC Schottky diodes by capacitance and current-voltage measurements Christophe Raynaud , Karine Isoird , Mihai Lazar , Cm Johnson , N. Wright Journal of Applied Physics, 2002, 91 (12), pp.9841-9847 Article dans une revue hal-00141477v1

	Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung 2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩ Communication dans un congrès hal-03856578v1
	SiC lateral Schottky diode technology for integrated smart power converter Jean-François Mogniotte , Christophe Raynaud , Mihai Lazar , Bruno Allard , Dominique Planson 2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352287⟩ Communication dans un congrès hal-01864545v1
	First steps of SiC integrated electronic functions for a smart power driver dedicated to harsh environments Jean-François Mogniotte , Mihai Lazar , Christophe Raynaud , Bruno Allard CAS, Oct 2017, Sinaia, Romania. ⟨10.1109/SMICND.2017.8101191⟩ Communication dans un congrès hal-01646319v1
	Realization and characterization of carbonic layers on 4H-SiC for electrochemical detections Julien Pezard , V. Souliere , Mihai Lazar , Naoufel Haddour , François Buret ECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52 Communication dans un congrès hal-02138738v1
	Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy Selsabil Sejil , Loïc Lalouat , Mihai Lazar , Davy Carole , Christian Brylinski ECSCRM'16, Sep 2016, Halkidiki, Greece Communication dans un congrès hal-02138729v1
	Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N Junctions Selsabil Sejil , Mihai Lazar , Davy Carole , Christian Brylinski , Dominique Planson Semiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States Communication dans un congrès hal-02428659v1
	Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices Mihai Lazar , Davy Carole , Christophe Raynaud , Gabriel Ferro , Selsabil Sejil CAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩ Communication dans un congrès hal-01388019v1
	Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase Tony Abi-Tannous , Maher Soueidan , G. Ferro , Mihai Lazar , Christophe Raynaud ICSCRM, Oct 2015, Giardini Naxos, Italy Communication dans un congrès hal-02138520v1
	4H-SiC P-N junctions realized by VLS for JFET lateral structures Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61 Communication dans un congrès hal-02133686v1
	Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC Hassan Hamad , Pascal Bevilacqua , Dominique Planson , Christophe Raynaud , Dominique Tournier Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France Communication dans un congrès hal-01065307v1
	Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects Dominique Planson , Pierre Brosselard , Karine Isoird , Mihai Lazar , Luong Viêt Phung CAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩ Communication dans un congrès hal-01388002v1
	Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD Communication dans un congrès hal-00661500v1
	Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization Cyril Buttay , Amandine Masson , Jianfeng Li , Mark C. Johnson , Mihai Lazar HiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7 Communication dans un congrès hal-00672619v1
	OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients Duy Minh Nguyen , Christophe Raynaud , Mihai Lazar , Gontran Pâques , Sigo Scharnholz CSCRM, Sep 2011, Cleveland, United States Communication dans un congrès hal-00747298v1
	SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements Mihai Lazar , François Jomard , Duy Minh Nguyen , Christophe Raynaud , Gontran Pâques ICSCRM, Sep 2011, Cleveland, United States Communication dans un congrès hal-00747300v1
	Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters Dominique Bergogne , Hervé Morel , Dominique Tournier , Bruno Allard , Dominique Planson 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2 Communication dans un congrès hal-00372982v1
	SiC Power Semiconductor Devices for new Applications in Power Electronics Dominique Planson , Dominique Tournier , Pascal Bevilacqua , Nicolas Dheilly , Hervé Morel 13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩ Communication dans un congrès hal-00373016v1
	Comparison of electrical properties of ohmic contact realized on p-type 4H-SiC D M Nguyen , Christophe Raynaud , Mihai Lazar , H Vang , Dominique Planson ICSCRM'2007, Oct 2007, Otsu, Japan Communication dans un congrès hal-02961607v1
	A 3.5 kV thyristor in 4H-SiC with a JTE periphery Pierre Brosselard , Thierry Bouchet , Dominique Planson , Sigo Scharnholz , Gontran Pâques European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy Communication dans un congrès hal-02953080v1
	P-type SiC layers formed by VLS induced selective epitaxial growth Mihai Lazar , C Jacquier , Ch Dubois , Christophe Raynaud , G Ferro European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy Communication dans un congrès hal-02953086v1
	Electrothermal simulations of silicon carbide current limiting devices Dominique Planson , J.P. Chante , M. Lazar , P. Brosselard , Christophe Raynaud 2003 IEEE International Conference on Industrial Technology, Dec 2003, Maribor, Slovenia. pp.1135-1140, ⟨10.1109/ICIT.2003.1290823⟩ Communication dans un congrès hal-02498210v1
	Design and simulation of a planar anode GTO thyristor on SiC Pierre Brosselard , Dominique Planson , Sigo Scharnholz , V. Zorngiebel , Mihai Lazar CAS (International Semiconductor Conference), Sep 2003, Sinaia, Romania. pp.222, ⟨10.1109/SMICND.2003.1252421⟩ Communication dans un congrès hal-00410085v1
	SiC-based current limiter devices Jean-Pierre Chante , Dominique Tournier , Dominique Planson , Christophe Raynaud , Mihai Lazar International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. pp.951-956, ⟨10.4028/www.scientific.net/MSF.457-460.951⟩ Communication dans un congrès hal-04032970v1
	Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extension Christophe Raynaud , M. Lazar , Dominique Planson , J.-P Chante , Z. Sassi International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France Communication dans un congrès hal-02498145v1
	Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor Pierre Brosselard , Volker Zorngiebel , Dominique Planson , Sigo Scharnholz , J.-P Chante International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France Communication dans un congrès hal-02503456v1
	Silicon Carbide specific components for power electronics system protection J.-P Chante , Dominique Planson , Christophe Raynaud , Marie-Laure Locatelli , M. Lazar International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France Communication dans un congrès hal-02503449v1
	OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension S.R. Wang , Christophe Raynaud , Dominique Planson , Mihai Lazar , Jean-Pierre Chante European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden Communication dans un congrès hal-02464381v1
	Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC Roberta Nipoti , Francesco Moscatelli , Andrea Scorzoni , Antonella Poggi , Gian Carlo Cardinali 2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K6.2⟩ Communication dans un congrès hal-02485106v1
	Characterization of a 4H-SiC High Power Density Controlled Current Limiter Dominique Tournier , Xavier Jorda , Josep Montserrat , Dominique Planson , Christophe Raynaud European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden Communication dans un congrès hal-02458130v1
	Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterization K Isoird , M Lazar , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson ICSCRM, Oct 2001, Tsukuba, Japan Communication dans un congrès hal-02975956v1
	Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing Mihai Lazar , Karine Isoird , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud 43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States Communication dans un congrès hal-02275712v1
	Study of 6H-SiC high voltage bipolar diodes under reverse biases Karine Isoird , Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud European Materials Research Society (E-MRS Spring Meeting) 2001, Jun 2001, Strasbourg, France Communication dans un congrès hal-03712596v1
	4H-SiC bipolar power diodes realized by ion implantation M. Lazar , Dominique Planson , K. Isoird , Marie-Laure Locatelli , Christophe Raynaud CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.349-352, ⟨10.1109/SMICND.2001.967481⟩ Communication dans un congrès hal-02145397v1
	A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects M. Lazar , Christophe Raynaud , Dominique Planson , Marie-Laure Locatelli , K. Isoird ICSCRM, Oct 2001, Tsukuba, Japan Communication dans un congrès hal-02476227v1

	Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation Christophe Raynaud , Duy Minh Nguyen , Nicolas Dheilly , Dominique Tournier , Pierre Brosselard Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009 Chapitre d'ouvrage hal-00661529v1

Mihai Lazar

Présentation

Publications

Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target

Analytical modelling of a lateral dual gate MESFET for integrated circuit in SiC

Silicon Carbide Technology of MESFET-Based Power Integrated Circuits

SiC integrated circuits for smart power converter

Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections

Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters

Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions

Optimization of VLS Growth Process for 4H-SiC P/N Junctions

A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase

Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti3SiC2 Phase

VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures

2D Electric field imagery in 4H-SiC power diodes using OBIC technique

P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices

OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients

SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

State of the art of high temperature power electronics

Experimental determination of impact ionization coefficients in 4H-SiC

Composants de puissance en SiC. Etat de l'art

P-type SiC layers formed by VLS induced selective epitaxial growth

OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension

Barrier height determination of SiC Schottky diodes by capacitance and current-voltage measurements

Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT

SiC lateral Schottky diode technology for integrated smart power converter

First steps of SiC integrated electronic functions for a smart power driver dedicated to harsh environments

Realization and characterization of carbonic layers on 4H-SiC for electrochemical detections

Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy

Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N Junctions

Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase

4H-SiC P-N junctions realized by VLS for JFET lateral structures

Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC

Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization

OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients

SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements

Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters

SiC Power Semiconductor Devices for new Applications in Power Electronics

Comparison of electrical properties of ohmic contact realized on p-type 4H-SiC

A 3.5 kV thyristor in 4H-SiC with a JTE periphery

P-type SiC layers formed by VLS induced selective epitaxial growth

Electrothermal simulations of silicon carbide current limiting devices

Design and simulation of a planar anode GTO thyristor on SiC

SiC-based current limiter devices

Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extension

Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor

Silicon Carbide specific components for power electronics system protection

OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension

Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC

Characterization of a 4H-SiC High Power Density Controlled Current Limiter

Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterization

Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing

Study of 6H-SiC high voltage bipolar diodes under reverse biases

4H-SiC bipolar power diodes realized by ion implantation

A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects

Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation

Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p⁺⁺ Emitters

Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti₃SiC₂ Phase