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	Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate Marie Lesecq , Yassine Fouzi , Ali Abboud , N. Defrance , Francois Vaurette Microelectronic Engineering, 2023, 276, pp.111998. ⟨10.1016/j.mee.2023.111998⟩ Article dans une revue hal-04084512v1