CV Accueil - Archive ouverte HAL

	Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors Micka Bah , Daniel Alquier , Marie Lesecq , Nicolas Defrance , Damien Valente Materials Science in Semiconductor Processing, 2024, 171, pp.107977. ⟨10.1016/j.mssp.2023.107977⟩ Article dans une revue hal-04378667v1
	Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate Marie Lesecq , Yassine Fouzi , Ali Abboud , N. Defrance , Francois Vaurette Microelectronic Engineering, 2023, 276, pp.111998. ⟨10.1016/j.mee.2023.111998⟩ Article dans une revue hal-04084512v1
	AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications Marie Lesecq , Eric Frayssinet , Marc Portail , Micka Bah , N. Defrance Materials Science Forum, 2022, 1062, pp.482-486. ⟨10.4028/p-2wi7o8⟩ Article dans une revue hal-03741438v1
	Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies Micka Bah , Damien Valente , Marie Lesecq , N. Defrance , Maxime Garcia Barros Scientific Reports, 2020, 10 (1), pp.14166. ⟨10.1038/s41598-020-71064-0⟩ Article dans une revue hal-02929022v1

	Comparison of AlGaN/GaN High Electron Mobility Transistors grown by MOVPE on 3C-SiC/Si(111), Si(111) and 6H-SiC for RF applications Marie Lesecq , Éric Frayssinet , Marc Portail , Micka Bah , Nicolas Defrance International Workshop on Nitride Semi-conductors, IWN 2022, Oct 2022, Berlin, Germany Communication dans un congrès hal-04037282v1
	Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopy Micka Bah , Damien Valente , Marie Lesecq , N. Defrance , Maxime Garcia Barros Wocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.131-132 Communication dans un congrès hal-03284079v1

Micka BAH