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Publications

	AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications Marie Lesecq , Eric Frayssinet , Marc Portail , Micka Bah , N. Defrance Materials Science Forum, 2022, 1062, pp.482-486. ⟨10.4028/p-2wi7o8⟩ Article dans une revue hal-03741438v1

	Comparison of AlGaN/GaN High Electron Mobility Transistors grown by MOVPE on 3C-SiC/Si(111), Si(111) and 6H-SiC for RF applications Marie Lesecq , Éric Frayssinet , Marc Portail , Micka Bah , Nicolas Defrance International Workshop on Nitride Semi-conductors, IWN 2022, Oct 2022, Berlin, Germany Communication dans un congrès hal-04037282v1