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ToF-SIMS Li Depth Profiling of Pure and Methylated Amorphous Silicon Electrodes After Their Partial Lithiation
Yue Feng
,
Bon Min Koo
,
Antoine Seyeux
,
Jolanta Światowska
,
Catherine Henry de Villeneuve
Article dans une revue
hal-03872818v1
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Growth of Fe‐BDC Metal Organic Frameworks onto functionalized Si (111) surfaces
Hongye Yuan
,
Weichu Fu
,
Nadia Soulmi
,
Christian Serre
,
Nathalie Steunou
Article dans une revue
hal-03653533v1
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Controlling homogeneity of the first lithiation in methylated amorphous silicon
Yue Feng
,
Abdelhak Cheriet
,
Marianthi Panagopoulou
,
Damien Aureau
,
Alistair C.H. Rowe
Article dans une revue
hal-03871341v1
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Lithiation of pure and methylated amorphous silicon: Monitoring by operando optical microscopy and ex situ atomic force microscopy
Yue Feng
,
Thuy-Doan-Trang Ngo
,
Marianthi Panagopoulou
,
Abdelhak Cheriet
,
Bon Min Koo
Article dans une revue
hal-02380443v1
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Artificial Solid Electrolyte Interphase Formation on Si Nanoparticles through Radiolysis: Importance of the Presence of an Additive
Chandra S. Bongu
,
Suzy Surble
,
John Alper
,
Adrien Boulineau
,
Jean-Frederic Martin
Article dans une revue
cea-02389071v1
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Lithiation Mechanism of Methylated Amorphous Silicon Unveiled by Operando ATR-FTIR Spectroscopy
Bon Min Koo
,
Daniel Alves Dalla Corte
,
Jean-Noël Chazalviel
,
Fouad Maroun
,
Michel Rosso
Article dans une revue
hal-02324947v1
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Methylated silicon : A longer cycle-life material for Li-ion batteries
Larbi Touahir
,
Abdelhakim Cheriet
,
Daniel Alves Dalla Corte
,
Jean-Noël Chazalviel
,
Catherine Henry-De-Villeneuve
Article dans une revue
hal-03452225v1
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Loop Structure of Percolation Hulls
M. Kolb
,
Michel Rosso
Article dans une revue
hal-01145515v1
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Loop structure of percolation hull's
Max Kolb
,
Michel Rosso
Article dans une revue
hal-00006093v1
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The fractal nature of a diffusion front and the relation to percolation
Bernard Sapoval
,
Michel Rosso
,
Jean-François Gouyet
Article dans une revue
jpa-00232493v1
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Electron spin resonance study of interacting donor clusters in phosphorus-doped silicon at 100 GHz and low temperatures
K. Morigaki
,
Michel Rosso
Article dans une revue
jpa-00208358v1
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