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michel renovell

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jean-marc-galliere
florence-azais

Analytical Models for the Evaluation of Resistive Short Defect Detectability in Presence of Process Variations: Application to 28nm Bulk and FDSOI Technologies

Amit Karel , Florence Azaïs , Mariane Comte , Jean-Marc J.-M. Galliere , Michel Renovell
Journal of Electronic Testing: : Theory and Applications, 2019, 35 (1), pp.59-75. ⟨10.1007/s10836-019-05776-1⟩
Article dans une revue lirmm-02075690v1

Resistive Bridging Defect Detection in Bulk, FDSOI and FinFET Technologies

Amit Karel , Mariane Comte , Jean-Marc J.-M. Galliere , Florence Azaïs , Michel Renovell
Journal of Electronic Testing: : Theory and Applications, 2017, 33 (4), pp.515-527. ⟨10.1007/s10836-017-5674-9⟩
Article dans une revue hal-01709587v1

Influence of Body-Biasing, Supply Voltage, and Temperature on the Detection of Resistive Short Defects in FDSOI Technology

Amit Karel , Mariane Comte , Jean-Marc J.-M. Galliere , Florence Azaïs , Michel Renovell
IEEE Transactions on Nanotechnology, 2017, 16 (3), pp.417-430. ⟨10.1109/TNANO.2017.2664895⟩
Article dans une revue hal-01709588v1

Testing for Gate Oxide Short Defects using the Detectability Interval Paradigm

Jean-Marc J.-M. Galliere , Florence Azaïs , Mariane Comte , Michel Renovell
Information Technology, 2014, 56 (4), pp.173-181. ⟨10.1515/itit-2013-1040⟩
Article dans une revue hal-01167054v1

Viability of a Delay Testing of Gate Oxide Short Transistors

Jean-Marc J.-M. Galliere , Michel Renovell , Florence Azaïs , Yves Bertrand
Journal of Computer Science and Technology, 2005, 20 (2), pp.6. ⟨10.1007/s11390-005-0195-x⟩
Article dans une revue lirmm-00370370v1

Delay Testing Viability of Gate Oxide Short Defect

Jean-Marc J.-M. Galliere , Michel Renovell , Florence Azaïs , Yves Bertrand
Journal of Computer Science and Technology, 2005, 20 (2), pp.195-200. ⟨10.1007/s11390-005-0195-x⟩
Article dans une revue lirmm-00105323v1

A Compact DC Model of Gate Oxide Short Defect

Rachid Bouchakour , Jean-Michel Portal , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand
Microelectronic Engineering, 2004, 72 (1-4), pp.140-148. ⟨10.1016/j.mee.2003.12.051⟩
Article dans une revue lirmm-00108564v1

Modeling the Random Parameter Effects in a Non-Split Model of Gate Oxide Short

Michel Renovell , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand
Journal of Electronic Testing: : Theory and Applications, 2003, 19 (4), pp. 377-386. ⟨10.1023/A:1024683708105⟩
Article dans une revue lirmm-00269754v1

Impact of process variations on the detectability of resistive short defects: Comparative analysis between 28nm Bulk and FDSOI technologies

Amit Karel , Florence Azaïs , Mariane Comte , Jean-Marc J.-M. Galliere , Michel Renovell
LATS 2018 - 19th IEEE Latin American Test Symposium, Mar 2018, Sao Paulo, Brazil. ⟨10.1109/LATW.2018.8349696⟩
Communication dans un congrès lirmm-02064921v1

Comprehensive Study for Detection of Weak Resistive Open and Short Defects in FDSOI Technology

Amit Karel , Florence Azaïs , Mariane Comte , Jean-Marc J.-M. Galliere , Michel Renovell
ISVLSI: International Symposium on Very Large Scale Integration, Jul 2017, Bochum, Germany. pp.320-325, ⟨10.1109/ISVLSI.2017.63⟩
Communication dans un congrès hal-01709614v1

Detection of resistive open and short defects in FDSOI under delay-based test: Optimal VDD and body biasing conditions

Amit Karel , Florence Azaïs , Mariane Comte , Jean-Marc J.-M. Galliere , Michel Renovell
ETS: European Test Symposium, May 2017, Limassol, Cyprus. ⟨10.1109/ETS.2017.7968208⟩
Communication dans un congrès hal-01709615v1

Comparative study of Bulk, FDSOI and FinFET technologies in presence of a resistive short defect

Amit Karel , Mariane Comte , Jean-Marc J.-M. Galliere , Florence Azaïs , Michel Renovell
LATS: Latin-American Test Symposium, Mar 2016, Foz do Iguacu, Brazil. pp.129-134, ⟨10.1109/LATW.2016.7483352⟩
Communication dans un congrès lirmm-01374300v1

Impact of VT and Body-Biasing on Resistive short detection in 28nm UTBB FDSOI – LVT and RVT configurations

Amit Karel , Mariane Comte , Jean-Marc J.-M. Galliere , Florence Azaïs , Michel Renovell
ISVLSI: International Symposium on Very Large Scale Integration, Jul 2016, Pittsburgh, PA, United States. pp.164-169, ⟨10.1109/ISVLSI.2016.102⟩
Communication dans un congrès lirmm-01374292v1

Influence of Gate Oxide Short Defects on the Stability of Minimal Sized SRAM Core-Cell by Applying Non-Split Models

Jean-Marc J.-M. Galliere , Florence Azaïs , Michel Renovell , Luigi Dilillo
DTIS: Design and Technology of Integrated Systems in Nanoscale Era, 2009, Cairo, Egypt. pp.225-229
Communication dans un congrès lirmm-00370798v1

GOSMOS: A Gate Oxide Short Defect Embedded in a MOS Compact Model

Michel Renovell , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand , Jean-Michel Portal
LATW: Latin American Test Workshop, Feb 2003, Natal, Brazil
Communication dans un congrès lirmm-00269604v1

Delay Testing of MOS Transistor with Gate Oxide Short

Michel Renovell , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand
ATS: Asian Test Symposium, Nov 2003, Xian, China. pp.168-173
Communication dans un congrès lirmm-00269641v1
Image document

Modeling Gate Oxide Short Defects in CMOS Minimum Transistors

Michel Renovell , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand
ETW: European Test Workshop, 2002, Corfu, Greece. pp.15-20
Communication dans un congrès lirmm-00268527v1

A Non-Split Model for Realistic Gate Oxide Short in CMOS Technology

Michel Renovell , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand
DCIS: Design of Circuits and Integrated Systems, 2002, Santander, Spain. pp.197-204
Communication dans un congrès lirmm-00268432v1

Non-Linear and Non-Split Transistor MOS Model for Gate Oxyde Short

Michel Renovell , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand
DBT: Defect Based Testing, Apr 2002, Monterey, CA, United States. pp.11-16
Communication dans un congrès lirmm-00269333v1

Low Voltage Testing of Gate Oxide Short in CMOS Technology

Michel Renovell , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand
DDECS: Design and Diagnostics of Electronic Circuits and Systems, 2002, Brno, Czech Republic. pp.168-174
Communication dans un congrès lirmm-00268526v1

Boolean and Current Detection of MOS Transistor with Gate Oxide Short

Michel Renovell , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand
IEEE International Test Conference, Oct 2001, Baltimore, USA, pp.10
Communication dans un congrès lirmm-00370400v1