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Size and shape effects on excitons and biexcitons in single InAs∕InP quantum dots

 Nicolas Chauvin , B. Salem , G. Bremond , G. Guillot , C. Bru-Chevallier , et al.
Journal of Applied Physics, 2006, 100 (7), ⟨10.1063/1.2353896⟩
Article dans une revue hal-01902442v1
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Surface spinodal decomposition in low temperature Al0.48In0.52As grown on InP(001) by molecular beam epitaxy

 G. Grenet , Michel Gendry , M. Oustric , Y. Robach , L. Porte , et al.
Applied Surface Science, 1998, 123, pp.324 - 328. ⟨10.1016/S0169-4332(97)00522-9⟩
Article dans une revue istex hal-02194425v1

Tuning of emission energy of single quantum dots using phase-change mask for resonant control of their interactions

 Y. Sato , S. Kanazawa , A. Yamamura , M. Kuwahara , Philippe Regreny , et al.
Applied physics. A, Materials science & processing, 2015, 121, pp.1329
Article dans une revue hal-01489314v1

Low-Density InAs Quantum Dots Grown on InP(001) Using Solid-Source Molecular Beam Epitaxy with a Post-Growth Annealing Process

 Ryosuke Kubota , Toshiharu Saiki , Philippe Regreny , Aziz Benamrouche , Michel Gendry
Japanese Journal of Applied Physics, 2010, 49 (4), pp.041201. ⟨10.1143/JJAP.49.041201⟩
Article dans une revue hal-02087133v1

Design of III-V nanowires based micosources vertically coupled to a Si waveguide for optical interconnects

 Zhen Lin , Michel Gendry , J.C. Harmand , Xavier Letartre
CSW 2014, 2014, Montpellier, France
Communication dans un congrès hal-01489859v1

Strained InAs nanostructures self-organised on high-index InP(113)B

 J. Brault , M. Gendry , G. Grenet , A. Solère , M. Phaner-Goutorbe , et al.
Applied Surface Science, 2000, 166 (1-4), pp.326-331. ⟨10.1016/S0169-4332(00)00474-8⟩
Article dans une revue istex hal-02012313v1

Micro-photoluminescence study of single self-organized InAs/InP quantum sticks

 Nicolas Chauvin , Bassem Salem , C. Bru-Chevallier , T. Benyatou , Gérard Guillot , et al.
Materials Science and Engineering: C, 2005, 25, pp.650-653. ⟨10.1016/j.msec.2005.06.023⟩
Article dans une revue istex hal-01975987v1

Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(0 0 1)

 R. Ajjel , M. Baira , M. Gassoumi , M Maaref , B. Salem , et al.
Semiconductor Science and Technology, 2006, 21 (3), pp.311-315. ⟨10.1088/0268-1242/21/3/019⟩
Article dans une revue istex hal-02088437v1

Nanowire-based telecom band single photon sources monolithically grown on silicon

 Ali Jaffal , Walid Redjem , Philippe Regreny , Hai Son Nguyen , Sébastien Cueff , et al.
Journées de la Matière Condensée 2022, Aug 2022, Lyon, France
Poster de conférence hal-03763521v1
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Comparison of Various InGaAs-based Solar Cells for Concentrated Photovoltaics Applications

 François Chancerel , Philippe Regreny , Jean -Louis Leclercq , Maite Volatier , Abdelatif Jaouad , et al.
17th Conference on Concentrated PhotoVoltaïcs System, 2021, Denver (On line), United States. ⟨10.1063/5.0103648⟩
Communication dans un congrès hal-03407479v1

InGaAs Quantum Dots Grown by Molecular Beam Epitaxy for Light Emission on Si Substrates

 C. Bru-Chevallier , A. El Akra , David Pelloux-Gervais , H. Dumont , B. Canut , et al.
Journal of Nanoscience and Nanotechnology, 2011, 11 (10), pp.9153-9159. ⟨10.1166/jnn.2011.4282⟩
Article dans une revue hal-01735321v1

Optical Simulation of Multijunction Solar Cells Based on III-V Nanowires on Silicon

 Abdennacer Benali , J. Michallon , Philippe Regreny , Emmanuel Drouard , Pédro Rojo Romeo , et al.
Energy Procedia, 2014, 60, pp.109-115. ⟨10.1016/j.egypro.2014.12.351⟩
Article dans une revue hal-01489904v1
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Low size dispersion of InAs quantum islands emitting at 1.55μm on InP (001)

 Christelle Monat , Michel Gendry , Julien Brault , M.P. Besland , Philippe Regreny , et al.
Conference Proceedings, 2002, Paris, France. pp.565-568, ⟨10.1109/ICIPRM.2002.1014491⟩
Communication dans un congrès hal-02353255v1

Thallium incorporation into GaAs(001) grown by solid source MBE: critical thickness and stability under annealing

 R. Beneyton , B. Canut , P. Regreny , Michel Gendry , G. Grenet , et al.
Journal of Crystal Growth, 2005, 275 (1-2), pp.e1171-e1175. ⟨10.1016/j.jcrysgro.2004.11.206⟩
Article dans une revue istex hal-02090249v1
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Room temperature low-threshold InAs/InP quantum dot single mode photonic crystal microlasers at 1.5 μm using cavity-confined slow light

 Frédéric Bordas , C. Seassal , Emmanuel Dupuy , Philippe Regreny , Michel Gendry , et al.
Optics Express, 2009, 17, pp.5439 - 5445
Article dans une revue hal-02087694v1

Experimental evidence for critical 2D nuclei in the 2D/3D growth mode transition of compressive and tensile strained InGaAs on InP(001)

 Michel Gendry , G. Hollinger
Journal of Crystal Growth, 2003, 257 (1-2), pp.51-59. ⟨10.1016/S0022-0248(03)01406-4⟩
Article dans une revue istex hal-02091262v1

Single photon emission with a Gaussian far-field at telecom wavelength from single InAs/InP quantum dot-nanowires monolithically grown on Si

 Ali Jaffal , Walid Redjem , Philippe Regreny , Hai Son Nguyen , Sébastien Cueff , et al.
Nanowire Week 2019, Sep 2019, Pise, Italy
Communication dans un congrès hal-02302232v1

Photoconductive spectral analysis of InAs quantum dot under normal incidence

 S.E. Schacham , G. Bahir , E. Finkman , F.H. Julien , F. Fossard , et al.
Infrared Physics and Technology, 2003, 44 (5-6), pp.509-512. ⟨10.1016/S1350-4495(03)00166-X⟩
Article dans une revue istex hal-02091276v1

Polarized front-illumination response in intraband quantum dot infrared photodetectors at 77 K

 E. Finkman , S. Maimon , V. Immer , G. Bahir , E. Schacham , et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 63 (4), ⟨10.1103/PhysRevB.63.045323⟩
Article dans une revue hal-02172272v1

Pseudomorphic molecular beam epitaxy growth of γ-Al2O3(001) on Si(001) and evidence for spontaneous lattice reorientation during epitaxy

 C. Merckling , M. El-Kazzi , G. Delhaye , M. Gendry , Guillaume Saint-Girons , et al.
Applied Physics Letters, 2006, 89 (23), pp.232907
Article dans une revue hal-01939908v1
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Spectroscopy of electronic states in InAs quantum dots grown on In(x)Al(1-x)As/InP(001)

 F. Fossard , A. Helman , G. Fishman , F. H Julien , J. Brault , et al.
Physical Review Letters, 2004, 69, pp.155333. ⟨10.1103/PhysRevB.69.155333⟩
Article dans une revue hal-00018243v1

GaAs/TiO2 core-shell nanowires for Solar Water Splitting

 X. Guan , M. Vettori , J. Becdelievre , C. Botella , G. Grenet , et al.
J2N 2017, Nov 2017, Grenoble, France
Communication dans un congrès hal-02073219v1

Capping and decapping GaAs nanowires with an As shell

 X. Guan , Louise Fouquat , Claude Botella , G. Grenet , Philippe Regreny , et al.
Journées Nationales Nanofils semiconducteurs, Nov 2019, Ecully, France
Poster de conférence hal-03339999v1

Quantum confinement effect in InAs/InP quantum dot nanowires (QD-NWs) grown on silicon

 Amaury Mavel , Philippe Regreny , G. Patriarche , Bruno Masenelli , Nicolas Chauvin , et al.
Nanowire week 2015, Oct 2015, Barcelone, Spain. 2015
Poster de conférence hal-01489631v1

Neutral and charged multi-exciton complexes in single InAs quantum dots grown on InP(001)

 Nicolas Chauvin , E. Tranvouez , G. Bremond , G. Guillot , C. Bru-Chevallier , et al.
Nanotechnology, 2006, 17 (8), pp.1831-1834. ⟨10.1088/0957-4484/17/8/004⟩
Article dans une revue istex hal-01902515v1

Highly sensitive In0,75Ga0,25As/AlInAs Hall sensors

 S Del Medico , T. Benyattou , G. Guillot , Michel Gendry , M. Oustric , et al.
Semiconductor Science and Technology, 1996, 11 (4), pp.576-581. ⟨10.1088/0268-1242/11/4/020⟩
Article dans une revue istex hal-02197211v1
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Elastic misfit stress relaxation in Ino.25Gao.vsAs layers grown under tension on InP(0 0 1)

 D. Jacob , Y Androussi , T Benabbas , P François , D Ferré , et al.
Journal of Crystal Growth, 1997, 179, pp.331 - 338. ⟨10.1016/S0022-0248(97)00181-4⟩
Article dans une revue istex hal-02195046v1
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Control of the compensating defects in Al-doped and Ga-doped ZnO nanocrystals for MIR plasmonics

 M. K Hamza Taha , O. Boisron , B. Canut , P. Mélinon , J. Penuelas , et al.
RSC Advances, 2017, 7 (46), pp.28677-28683. ⟨10.1039/c7ra03697c⟩
Article dans une revue hal-01964749v1
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Alloying effects on the critical layer thickness in InxGa1−xAs/InP heterostructures analyzed by Raman scattering

 P.S. Pizani , T.M. Boschi , F. Lanciotti, Jr , J. Groenen , Robert Carles , et al.
Applied Physics Letters, 1998, 72 (4), pp.436-438. ⟨10.1063/1.120800⟩
Article dans une revue hal-02111887v1

Growth of core (GaAs) / shell (functional oxide) nanowires

 Xin Guan , Jeanne Becdelievre , Benjamin Meunier , Abdennacer Benali , Guillaume Saint-Girons , et al.
EMN Meeting on Nanowires, May 2016, Amsterdam, Netherlands
Communication dans un congrès hal-01701391v1
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