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InAs/InP nanowires for silicon photonics: toward self-catalyzed growth?

 Michel Gendry
GDR Nanofils Semiconducteurs, Nanotubes, 2014, Toulouse, France
Communication dans un congrès hal-01490275v1

Temperature dependence of responsivity in quantum dot infrared photodetectors

 S.E. Schacham , G. Bahir , E. Finkman , F.H. Julien , J. Brault , et al.
Physica E: Low-dimensional Systems and Nanostructures, 2003, 17, pp.636-637. ⟨10.1016/S1386-9477(02)00915-3⟩
Article dans une revue istex hal-02090529v1

Hétérostructures à base de nanofils III-V

 José Penuelas , Xin Guan , Jeanne Becdelievre , Louise Fouquat , Philippe Regreny , et al.
Journées Surfaces et Interfaces, Jan 2018, Strasbourg, France
Communication dans un congrès hal-01701541v1

Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates

 Roman Anufriev , Nicolas Chauvin , Hammadi Khmissi , Khalid Naji , Gilles Patriarche , et al.
physica status solidi (RRL) - Rapid Research Letters, 2013, 7 (10), pp.878-881. ⟨10.1002/pssr.201307242⟩
Article dans une revue istex hal-01988420v1

Femtosecond mid-infrared study of electron dynamics in self-organized InAs quantum wires on InAlAs/InP (001)

 Emmanuel Peronne , T. Polack , Jean-Francois Lampin , Antigoni Alexandrou , F. Fossard , et al.
12th International Conference on Ultrafast Phenomena, 2000, United States. pp.372-374
Communication dans un congrès hal-00250436v1
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Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires

 Nicolas Chauvin , Amaury Mavel , G. Patriarche , Bruno Masenelli , Michel Gendry , et al.
Nano Letters, 2016, 16 (5), pp.2926-2930. ⟨10.1021/acs.nanolett.5b04646⟩
Article dans une revue hal-01489142v1

Optical Investigation of the Band Structure in Wurtzite InP Nanowires

 Nicolas Chauvin , Amaury Mavel , G. Patriarche , Bruno Masenelli , D. Machon , et al.
Nanowire week 2017, May 2017, Lund, Sweden. 2017
Poster de conférence hal-01701495v1

Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001)

 E. Dupuy , P. Regreny , Y. Robach , M. Gendry , Nicolas Chauvin , et al.
Applied Physics Letters, 2006, 89 (12), ⟨10.1063/1.2354010⟩
Article dans une revue hal-01902435v1

Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring

 Ali Jaffal , Philippe Regreny , Gilles J Patriarche , Michel Gendry , Nicolas Chauvin
Nanoscale, 2021, 13, pp.16952-16958. ⟨10.1039/D1NR04263G⟩
Article dans une revue hal-03269925v1
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Growing self-assisted GaAs nanowires up to 80 µm long by Molecular Beam Epitaxy

 Jeanne Becdelievre , Xin Guan , Iuliia Dudko , Philippe Regreny , Nicolas Chauvin , et al.
Nanotechnology, 2023, 34, pp.045603. ⟨10.1088/1361-6528/ac9c6b⟩
Article dans une revue hal-03826464v1

Hybrid core - shell nanowires grown by molecular beam epitaxy

 Jose Penuelas , Thomas Dursap , Louise Fouquat , Marco Vettori , Xin Guan , et al.
Congrès CNano 2018, Dec 2018, Toulon, France
Communication dans un congrès hal-01965492v1

Growth modes and relaxation mechanisms of strained InGaAs layers grown on InP(001)

 Michel Gendry , V. Drouot , C. Santinelli , G. Hollinger
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 1992, 10 (4), pp.1829. ⟨10.1116/1.586207⟩
Article dans une revue hal-02200825v1

Band gap tuning of InAs∕InP quantum sticks using low-energy ion-implantation-induced intermixing

 B. Salem , V. Aimez , D. Morris , A. Turala , P. Regreny , et al.
Applied Physics Letters, 2005, 87 (24), pp.241115. ⟨10.1063/1.2142330⟩
Article dans une revue hal-02089694v1

Optical mode study of III–V-nanowire-based nanophotonic crystals for an integrated infrared band microlaser

 Zhen Lin , Michel Gendry , Xavier Letartre
Photonics research, 2014, 2(6), pp.182
Article dans une revue hal-01489902v1

Nanopatterning of InP(001) surface using e-beam lithography to localize InAs quantum dots for single photon source application

 A. Turala , P. Rojo-Romeo , P. Regreny , M. Gendry , C. Priester
2006, 2 pp
Communication dans un congrès hal-00152961v1
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Mechanical relaxation of strained semiconducting stripes: Influence on optoelectronic properties

 G. Fierling , M. Buchheit , X. Letartre , M. Gendry , P. Viktorovitch , et al.
Applied Physics Letters, 1997, 71 (11), pp.1516-1518. ⟨10.1063/1.119953⟩
Article dans une revue hal-02111632v1

Low frequency noise sources in InAlAs/InGaAs MODFETs

 P. Viktorovitch , P. Rojo-Romeo , J.L. Leclercq , X. Letartre , J. Tardy , et al.
IEEE Transactions on Electron Devices, 1996, 43 (12), pp.2085-2100. ⟨10.1109/16.544379⟩
Article dans une revue hal-02197197v1
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Alloying effects in self-assembled InAs/InP dots

 J. Brault , Michel Gendry , G. Grenet , G. Hollinger , Y. Desieres , et al.
Journal of Crystal Growth, 1999, 201, pp.1176 - 1179. ⟨10.1016/S0022-0248(99)00020-2⟩
Article dans une revue istex hal-02194226v1
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Role of the step curvature in the stabilization of coherently strained epitaxial structures

 P Krapf , Y. Robach , Michel Gendry , L. Porte
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1997, 55,, ⟨10.1103/PhysRevB.55.R10229⟩
Article dans une revue hal-02195284v1

Morphological and structural properties of InP/Gd2O3 nanowires grown by molecular beam epitaxy on silicon substrate

 J. Penuelas , X. Lu , N.P. Blanchard , Guillaume Saint-Girons , B. Vilquin , et al.
Journal of Crystal Growth, 2012, 347 (1), pp.49-52. ⟨10.1016/j.jcrysgro.2012.03.003⟩
Article dans une revue hal-01939995v1

Photoreflectance spectroscopy of self-organized InAs/InP(001) quantum sticks emitting at 1.55μm

 H. Chouaib , Nicolas Chauvin , C. Bru-Chevallier , Christelle Monat , P. Regreny , et al.
Applied Surface Science, 2006, 253 (1), pp.90 - 94. ⟨10.1016/j.apsusc.2006.05.081⟩
Article dans une revue istex hal-01902530v1
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Room-temperature InAs/InP Quantum Dots laser operation based on heterogeneous “2.5 D” Photonic Crystal

 B. Ben Bakir , C Seassal , X. Letartre , Philippe Regreny , Michel Gendry , et al.
Optics Express, 2006, 11, pp.395 - 407
Article dans une revue hal-02089153v1

Nanocrystal Memories

 T. Baron , B. de Salvo , P. Mur , A. Souifi , M. Gendry , et al.
MRS SPRING MEETING, 2009, San Franscisco, United States
Communication dans un congrès hal-00394825v1

Capacitance-voltage analysis of InAs quantum dots grown on InAlAs/InP(0 0 1)

 O. Saad , M. Baira , R. Ajjel , Hassen Maaref , B. Salem , et al.
Microelectronics Journal, 2008, 39 (1), pp.7--11. ⟨10.1016/j.mejo.2007.10.020⟩
Article dans une revue istex hal-00666666v1

GaAs/AlGaAs core/shell nanowires on Si substrates for photovoltaics: toward an optimized tandem solar cell

 Marco Vettori , Andrea Cattoni , Philippe Regreny , Jose Penuelas , Nicolas Chauvin , et al.
Nanowire Week 2018, Jun 2018, Hamilton, Canada
Poster de conférence hal-02072873v1

Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution

 H. Hadj Alouane M , A. Helali , D. Morris , H. Maaref , Vincent Aimez , et al.
Journal of Luminescence, 2014, 145, pp.595-599
Article dans une revue hal-01490326v1

Distribution of barrier heights in metal/n-InAlAs Schottky diodes from current-voltage-temperature measurements

 Hamdaoui. N , Ajjel. R , B. Salem , Gendry. M.
Materials Science in Semiconductor Processing, 2014, 26 (1), pp. 431-437
Article dans une revue hal-01848728v1

Size and shape effects on excitons and biexcitons in single InAs∕InP quantum dots

 Nicolas Chauvin , B. Salem , G. Bremond , G. Guillot , C. Bru-Chevallier , et al.
Journal of Applied Physics, 2006, 100 (7), ⟨10.1063/1.2353896⟩
Article dans une revue hal-01902442v1
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Surface spinodal decomposition in low temperature Al0.48In0.52As grown on InP(001) by molecular beam epitaxy

 G. Grenet , Michel Gendry , M. Oustric , Y. Robach , L. Porte , et al.
Applied Surface Science, 1998, 123, pp.324 - 328. ⟨10.1016/S0169-4332(97)00522-9⟩
Article dans une revue istex hal-02194425v1

Tuning of emission energy of single quantum dots using phase-change mask for resonant control of their interactions

 Y. Sato , S. Kanazawa , A. Yamamura , M. Kuwahara , Philippe Regreny , et al.
Applied physics. A, Materials science & processing, 2015, 121, pp.1329
Article dans une revue hal-01489314v1
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