MD
Maxime Darnon
55
Documents
Identifiants chercheurs
maxime-darnon-
0000-0002-6188-7157
- Google Scholar : https://scholar.google.fr/citations?user=ZRXEV4AAAAAJ&hl=fr
- IdRef : 124051758
Présentation
Publications
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Synchronous Plasma Pulsing for Etch Applications3rd Plasma Etch and Strip in Microelectronics Workshop, Mar 2019, Grenoble, France
Communication dans un congrès
hal-02339989v1
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Plasma-induced damage during III-V semiconductor patterning for photonic and photovoltaic applications: from characterization to minimization18th conference on defects recognition, imaging and physics in semiconductors (DRIP XVIII), Sep 2019, Berlin, Germany
Communication dans un congrès
hal-02324729v1
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Etch process cleaning to improve wafer to wafer reproducibilityENRIS 2019 (European Nanofabrication Research Infrastructure Symposium), 2019, UNIVERSITY OF TWENTE, Netherlands
Communication dans un congrès
hal-02624143v1
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High Aspect Ratio and Low Damage III-V/Ge Heterostructure Via EtchingPlasma Etch and Strip in Microelectronics (PESM), 11th International Workshop, May 2019, Grenoble, France
Communication dans un congrès
hal-02324782v1
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Impact of plasma etching process exposure on the integrity of AlN and AlGaN layers integrated in GaN heterojunction transistors (HEMTs)Journées nationales sur les technologies émergentes en micro-nano fabrication, (JNTE2019), Nov 2019, Grenoble, France
Communication dans un congrès
hal-02916150v1
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Plasma processes for High Efficiency Multi-Junction Solar Cells Fabrication66th International AVS Symposium & Topical Conferences, Oct 2019, Columbus, Ohio, United States
Communication dans un congrès
hal-02336676v1
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III-V/Ge Heterostructure Etching for Through Cell Via Contact Multijunction Solar Cellc65th International AVS Symposium & Topical Conferences, Oct 2018, Long Beach, California, USA, United States
Communication dans un congrès
hal-01959003v1
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III-V/Ge Heterostructure Etching for Through Cell Via Contact Multijunction Solar Cell65th International AVS Symposium & Topical Conferences, Oct 2018, Long Beach, United States
Communication dans un congrès
hal-02324762v1
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Roughness generation during Si etching in Cl2 pulsed plasmasPlasma Etch and Strip in Microtechnologies conference, May 2016, Grenoble, France
Communication dans un congrès
hal-02339971v1
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Velocity distribution function of ions through high-aspect ratio holes in Inductively-Coupled Plasma reactorPlasma Etch and Strip in Microtechnologies conference, May 2016, Grenoble, France
Communication dans un congrès
hal-02339972v1
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RFEA analyzers to measure IVDF through high−aspect holes in pulsed ICP plasmasFrontiers in Low Temperature Plasma Diagnostics XI, 2015, Porquerolles, France
Communication dans un congrès
hal-01878109v1
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Measuring IVDF through high−aspect holes in pulsed ICP plasmas68th GEC / ICRP−9, Oct 2015, Honolulu, United States
Communication dans un congrès
hal-01878113v1
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Measuring IVDF through high-aspect holes in pulsed ICP plasma68th Gaseous Electronics Conference (GEC), Oct 2015, Honolulu, United States
Communication dans un congrès
hal-01878046v1
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Measuring IVDF through high−aspect holes in ICP plasmasPESM 2015 (Plasma Etch and Strip in Microtechnology), 2015, Louvain, Belgium
Communication dans un congrès
hal-01878112v1
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Silicon etching using CW, synchronized pulsed and bias pulsed Cl2 plasmaAVS 2014, , 2014, Baltimore, United States
Communication dans un congrès
hal-01798348v1
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Reactor wall plasma cleaning processes after InP etching in Cl2/CH4/Ar ICP dischargePlasma Etch and Strip in Microelectronics (PESM), 7th International Workshop, May 2014, grenoble, France
Communication dans un congrès
hal-01798099v1
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MD simulations of chlorine plasmas interaction with ultrathin silicon films for advanced etch processes.Plasma Etch and Strip in Microelectronics (PESM), 6th International Workshop, May 2014, grenoble, France
Communication dans un congrès
hal-01798524v1
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MD simulations of Cl2 plasmas interaction with ultrathin Si films for advanced etch processes”Plasma Etch and Strip in Microelectronics (PESM), May 2014, Grenoble (France), France
Communication dans un congrès
hal-01798396v1
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Pulsed Plasmas for etching in micro and nanoelectronicsPlasma Nanoscience Conference, Mar 2014, Dublin, Ireland
Communication dans un congrès
hal-02338129v1
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MD simulations of chlorine plasmas interaction with ultrathin Si films for advanced etch processes2014 Silicon Nanoelectronics Workshop (SNW), Jun 2014, Honolulu (USA), United States
Communication dans un congrès
hal-01798393v1
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Optical and Electrical Diagnostics of Pulsed Plasmas Etching ProcessesAVS 60h international symposium, Oct 2013, Long Beach, United States
Communication dans un congrès
hal-00925763v1
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Pulsed plasmas for etching at the nanoscaleJournées Nationales des Technologies Émergentes, May 2013, Evian les bains, France
Communication dans un congrès
hal-00860922v1
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Pulsed plasmas for etching in microelectronicsJournées du réseau plasma froids, 2013, La Rochelle, France
Communication dans un congrès
hal-00925769v1
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Optical and Electrical Diagnostics of Pulsed Plasmas Etching Processes11th Technological Plasma Workshop, Dec 2013, York, United Kingdom
Communication dans un congrès
hal-02338133v1
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Towards new plasma technologies for 22 nm gate etch processes and beyondSPIE Advanced Lithography, 2012, San Jose, United States. pp.83280D, ⟨10.1117/12.920312⟩
Communication dans un congrès
hal-00808682v1
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Analysis of Passivation Layer Composition and Thickness on Silicon Patterns Etched by Synchronously Pulsed Plasmas5th Plasma Etch and Strip in Microelectronics Workshop (PESM), Mar 2012, Grenoble, France
Communication dans un congrès
hal-00755594v1
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SiCl4/Cl2 plasmas: a new chemistry to etch high-k material selectively to Si-based AlloysPlasma Etch and Strip in Microelectronics conference, 2012, Grenoble, France
Communication dans un congrès
hal-00808860v1
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Towards new plasma technologies for 22nm gate etch processes and beyondSPIE-AL, 2012, San Jose, CA, United States
Communication dans un congrès
hal-00808670v1
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HfO2 Etching by Pulsed BCl3/Ar PlasmaAVS 58h international symposium, Oct 2011, Nashville, United States
Communication dans un congrès
hal-02339988v1
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Impact of Synchronized Plasma Pulsing Technologies on Key Parameters Governing STI Etch ProcessesAVS 58h international symposium, Oct 2011, Nashville, United States
Communication dans un congrès
hal-00647636v1
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Interest of synchronized pulsed plasmas for next CMOS technologiesChina Semiconductor Technology International Conference (CSTIC) 2011, Mar 2011, Shanghaï, China
Communication dans un congrès
hal-00625345v1
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Etch processes with pulsed plasmas for advanced CMOS technologies3rd International Conference on Microelectronics and Plasma Technology, Jul 2011, Dalian, China
Communication dans un congrès
hal-00647643v1
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HfO2 etching by pulsed BCl3/Ar plasma4th PESM workshop, May 2011, Belgium
Communication dans un congrès
hal-00641438v1
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Improving Etch Processes by Using Pulsed PlasmasAVS 58h international symposium, Oct 2011, Nashville, United States
Communication dans un congrès
hal-00647630v1
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Synchronized pulsed plasmas: potential process improvements for patterning technologies63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas, Oct 2010, Paris, France
Communication dans un congrès
hal-02338411v1
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Plasma etching processes for nanoCMOS and nanoelectronics devicesMinatech upstream crossroad, 2010, Grenoble, France
Communication dans un congrès
hal-00643917v1
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Synchronous Plasma Pulsing For Etch ApplicationsAVS 57th international symposium, Oct 2010, Albuquerque, United States
Communication dans un congrès
hal-00625368v1
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Challenges and future prospects in plasma etching processes3rd International Conference on PLAsma NanoTechnology and Science, Mar 2010, Nagoya,, Japan
Communication dans un congrès
hal-00625378v1
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Pulsed plasma for nanoCMOS and nanoelectronic device elaborationThe Second International Symposium on Plasma Nanoscience (iPlasmaNano-II), Dec 2010, Sydney, Australia
Communication dans un congrès
hal-00643911v1
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Synchronous Plasma Pulsing for silicon Etch ApplicationsChina Semiconductor Technology International Conference (CSTIC), 2010, Shangai, China
Communication dans un congrès
hal-00643921v1
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Plasma Pulsing for Atomic Layer Etching Application3rd Plasma Etch and Strip in Microelectronics Workshop, Mar 2010, Grenoble, France
Communication dans un congrès
hal-00625384v1
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Synchronous Plasma Pulsing for Etch ApplicationsChina Semiconductor Technology International Conference (CSTIC), Mar 2010, Shanghaï, China
Communication dans un congrès
hal-00647616v1
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Pulsed plasmas for nanoCMOS and nanoelectronics devices elaboration2nd International Conference on Plasma Nanoscience (iPlasma Nano-II), 2010, Bateman's Bay, Australia
Communication dans un congrès
hal-00944937v1
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Synchronized pulsed plasmas: potential process improvements for patterning technologies63rd Gaseous Electronic Conference and 7th International Conference on Reactive Plasmas, Oct 2010, Paris, France
Communication dans un congrès
hal-00625370v1
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Reduction of Plasma Induced Silicon-Recess During Gate Over-Etch Using Synchronous Pulsed PlasmasAVS 57th international symposium, Oct 2010, Albuquerque, United States
Communication dans un congrès
hal-00625366v1
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Inductively-Coupled Pulsed Plasmas in the Presence of Synchronous Pulsed Substrate Bias for Advanced Gate EtchingAVS 56th international symposium, Nov 2009, San José, United States
Communication dans un congrès
hal-00461590v1
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