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Photonic crystal properties of GaN infilled artificial opals

 Dominique Coquillat , Rene Legros , Sylvie Etienne-Calas , J. Phalippou , Matthieu Moret , et al.
25th International Conference on the Physics of Semiconductors (ICPS25), Sep 2000, OSAKA (JAPAN), Japan. pp.1741-1742
Communication dans un congrès hal-00546180v1

The determination of the bulk residual doping in indium nitride films using photoluminescence

 Olivier Briot , Matthieu Moret , Sandra Ruffenach , Bernard Gil
Applied Physics Letters, 2009, 95, pp.031910. ⟨10.1063/1.3187914⟩
Article dans une revue hal-00540269v1

Investigation of indium nitride for micro-nanotechnology

 A. Gokarna , Jean-Francois Lampin , D. Vignaud , El Hadj Dogheche , Didier Decoster , et al.
International Journal of Nanotechnology, 2012, 9, pp.900-906. ⟨10.1504/IJNT.2012.049454⟩
Article dans une revue hal-00787438v1

Ammonia: A source of hydrogen dopant for InN layers grown by metal organic vapor phase epitaxy

 Sandra Ruffenach , Matthieu Moret , Olivier Briot , Bernard Gil
Applied Physics Letters, 2009, 95, pp.042102. ⟨10.1063/1.3189212⟩
Article dans une revue hal-00539828v1

Influence of the growth rate on the morphology of electrodeposited zinc oxide

 Yoann Robin , Matthieu Moret , Sandra Ruffenach , Roger Aulombard , Olivier Briot
Superlattices and Microstructures, 2014, 73, pp.281. ⟨10.1016/j.spmi.2014.05.032⟩
Article dans une revue hal-01009319v1

Control of InN quantum dot density using rare gases in metal organic vapor phase epitaxy

 Sandra Ruffenach , Olivier Briot , Matthieu Moret , Bernard Gil
Applied Physics Letters, 2007, 90, pp.153102. ⟨10.1063/1.2721124⟩
Article dans une revue hal-00542122v1

Pressure cycling of InN to 20 GPa: In situ transport properties and amorphization

 Sergey V. Ovsyannikov , Vladimir V. Shchennikov , Alexander E. Karkin , Alain Polian , Olivier Briot , et al.
Applied Physics Letters, 2010, 97, pp.032105. ⟨10.1063/1.3466913⟩
Article dans une revue hal-00516955v1

Study and optimization of Al-doped ZnO thin films deposited on PEN substrates by RF-magnetron sputtering from nanopowders targets

 S. Hamrit , K. Djessas , N. Brihi , Olivier Briot , Matthieu Moret , et al.
Journal of Materials Science: Materials in Electronics, 2016, 27 (2), pp.1730-1737. ⟨10.1007/s10854-015-3947-6⟩
Article dans une revue hal-01280701v1

High excitation photoluminescence effects as a probing tool for the growth of Cu(In,Ga)Se-2

 Matthieu Moret , Olivier Briot , Bernard Gil , Thomas Lepetit , Ludovic Arzel , et al.
PHYSICS SIMULATION AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES IV, 2015, San Francisco, California, United States. pp.93581A, ⟨10.1117/12.2076938⟩
Communication dans un congrès hal-01134308v1

X-ray diffraction study of A- plane non polar InN epilayer grown by MOCVD

 Matthieu Moret , Olivier Briot , Bernard Gil
GALLIUM NITRIDE MATERIALS AND DEVICES X, conferenceOrganizer, 2015, San Francisco, United States. pp.936328, ⟨10.1117/12.2077513⟩
Communication dans un congrès hal-01134316v1

Determination of the direct bandgap value in In4Se3 thin films

 Lola de Brucker , Matthieu Moret , Bernard Gil , Wilfried Desrat
Journal of Physics: Condensed Matter, 2022, 34, pp.425703. ⟨10.1088/1361-648X/ac895f⟩
Article dans une revue hal-03780298v1

MOVPE growth and characterization of polar, semipolar and nonpolar InN on sapphire substrate

 Matthieu Moret , Sandra Ruffenach , Olivier Briot , Bernard Gil
ISGN3, Jul 2010, France. pp.1183-1186, ⟨10.1002/pssa.201001192⟩
Communication dans un congrès istex hal-00633882v1

InN excitonic deformation potentials determined experimentally

 Bernard Gil , Olivier Briot , Matthieu Moret , Sandra Ruffenach , Christoph Giesen , et al.
2nd International Symposium on Growth of III-Nitrides (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2798, ⟨10.1016/j.jcrysgro.2009.01.010⟩
Communication dans un congrès istex hal-00390295v1

The Determination of the Optical Bandgap of the Bernal and Rhombohedral Boron Nitride Polymorphs

 Adrien Rousseau , Matthieu Moret , Pierre Valvin , Wilfried Desrat , Jiahan Li , et al.
Physical Review Materials, 2021, 5, pp.064602. ⟨10.1103/PhysRevMaterials.5.064602⟩
Article dans une revue hal-03263151v1

Phages recognizing the Indium Nitride semiconductor surface via their peptides

 Elias Estephan , Marie-Belle Saab , Marta Martin-Fernandez , Christian Larroque , Frederic J. G. Cuisinier , et al.
E-MRS Symposium on Peptide-based Materials - from Nanostructures to Applications, Jun 2010, Strasbourg (FRANCE), France. pp.143-147
Communication dans un congrès hal-00633883v1

Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties

 Matthieu Moret , Sandra Ruffenach , Olivier Briot , B. Gil
European Physical Journal: Applied Physics, 2009, 45 (2), pp.20305
Article dans une revue hal-00390126v1
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Rhombohedral and Turbostratic Boron Nitride: X-ray Diffraction and Photoluminescence Signatures

 Matthieu Moret , Adrien Rousseau , Pierre Valvin , Shashim Sharma , Laurent Souqui , et al.
Applied Physics Letters, 2022, 119 (26), pp.262102. ⟨10.1063/5.0076424⟩
Article dans une revue hal-03507440v1
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Study of $Cu_{2}O{\backslash}ZnO$ nanowires heterojunction designed by combining electrodeposition and atomic layer deposition

 Houssin Makhlouf , Matthieu Weber , Olfa Messaoudi , Sophie Tingry , Matthieu Moret , et al.
Applied Surface Science, 2017, 426, pp.301 - 306. ⟨10.1016/j.apsusc.2017.07.130⟩
Article dans une revue hal-01596715v1

Alternative precursors for MOVPE growth of InN and GaN at low temperature

 Sandra Ruffenach , Matthieu Moret , Olivier Briot , Bernard Gil , Christoph Giesen , et al.
2nd International Symposium on the growth of III-NItrides (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2791, ⟨10.1016/j.jcrysgro.2009.01.038⟩
Communication dans un congrès istex hal-00390309v1

Recent advances in the MOVPE growth of indium nitride

 Sandra Ruffenach , Matthieu Moret , Olivier Briot , Bernard Gil
Symposium on Group III Nitride Semiconductors held at the 2009 EMRS Spring Meeting, Jun 2009, Strasbourg (FRANCE), France. pp.9-18
Communication dans un congrès hal-00540219v1

MOVPE growth and characterization of indium nitride on C-, A-, M-, and R-plane sapphire

 Matthieu Moret , Sandra Ruffenach , Olivier Briot , Bernard Gil
Symposium on Group III Nitride Semiconductors held at the 2009 EMRS Spring Meeting, Jun 2009, Strasbourg (FRANCE), France. pp.24-28
Communication dans un congrès hal-00540220v1

Modeling of nitride semiconductor based double heterostructure tunnel diodes

 Matthieu Moret , Sandra Ruffenach , Olivier Briot , Roger Aulombard
Symposium on New Applications for Wide-Bandgap Semiconductors, Apr 2003, SAN FRANCISCO (CA), United States. pp.227-232
Communication dans un congrès hal-00540478v1
Image document

Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties

 M. Moret , S. Ruffenach , O. Briot , B. Gil
European Physical Journal: Applied Physics, 2009, 45 (2), pp.1. ⟨10.1051/epjap/2009007⟩
Article dans une revue hal-00480143v1

MOVPE growth of InN films and quantum dots

 Matthieu Moret
E-MRS Fall Meeting, Sep 2009, Poland
Communication dans un congrès hal-00807795v1
Image document

Analysis of the gallium gradient in Cu(In1-xGax)Se-2 absorbers by X-ray diffraction

 C. Iatosti , Matthieu Moret , Antoine Tiberj , Olivier Briot
Solar Energy Materials and Solar Cells, 2021, 220, pp.110847. ⟨10.1016/j.solmat.2020.110847⟩
Article dans une revue hal-03175976v1

High Efficiency Solar Cell Based on Full PVD Processed Cu(In,Ga)Se2/CdIn2S4 Heterojunction

 Nicolas Barreau , Agathe Frelon , Thomas Lepetit , Eric Gautron , Nicolas Gautier , et al.
Solar RRL, 2017, ⟨10.1002/solr.201700140⟩
Article dans une revue hal-01616034v1

Phages recognizing the Indium Nitride semiconductor surface via their peptides.

 Elias Estephan , Marie-Belle Saab , Marta Martin , Christian Larroque , Frédéric Cuisinier , et al.
Journal of Peptide Science, 2010, DOI 10.1002/psc.1315. ⟨10.1002/psc.1315⟩
Article dans une revue istex hal-00526584v1

Recent Advances in the MOVPE Epitaxy of Indium Nitride

 Matthieu Moret
CIMTEC 2010 _ Forum on new materials, Jun 2010, Italy
Communication dans un congrès hal-00807798v1

Optical investigations and strain effect in AlGaN/GaN epitaxial layers

 M. Jayasakthi , Sandrine Juillaguet , Herve Peyre , Leszek Konczewicz , Matthieu Moret , et al.
33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, PEKIN, China. pp.UNSP 012021, ⟨10.1088/1742-6596/864/1/012021⟩
Communication dans un congrès hal-01935164v1

Evidence of direct optical transitions in γ-In2Se3

 Lola de Brucker , Wilfried Desrat , Matthieu Moret , Bernard Gil
Physical Review Materials, 2022, 6, pp.064003. ⟨10.1103/PhysRevMaterials.6.064003⟩
Article dans une revue hal-03708781v1
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