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111 résultats
A capacitor-less 1T-DRAM on SOI based on double gate operationIEEE Electron Device Letters, 2008, 29 (7, 795-798)
Article dans une revue
hal-00391609v1
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Investigation of hysteresis memory effects in SOI FinFETs with ONO buried insulator.2010 IEEE International SOI Conference, Oct 2010, San Diego, California, United States
Communication dans un congrès
hal-00604643v1
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Evaluation of Interface Trap Density in Advanced SOI MOSFETs219th ECS Meeting, 2011, Montreal, Canada. pp.103-108, ⟨10.1149/1.3570783⟩
Communication dans un congrès
hal-02066785v1
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Parasitic bipolar effect in advanced FD SOI MOSFETs: experimental evidence and gain extraction10th EUROSOI Workshop, Jan 2014, Tarrogona, Spain
Communication dans un congrès
hal-02008226v1
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Low-Power Z2-FET Capacitorless 1T-DRAM2017 IEEE International Memory Workshop (IMW), May 2017, Monterey, United States. pp.103-106, ⟨10.1109/IMW.2017.7939093⟩
Communication dans un congrès
hal-02007121v1
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Mobility Investigation by Geometrical Magnetoresistance in Fully Depleted MOSFETs and FinFETsIEEE Transactions on Electron Devices, 2014, 61 (6), pp.1979-1986. ⟨10.1109/TED.2014.2318516⟩
Article dans une revue
hal-02003371v1
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Sharp switching, hysteresis-free characteristics of Z 2 -FET for fast logic applications2018 ESSDERC - 48th European Solid-State Device Research Conference (ESSDERC), Sep 2018, Dresden, Germany. pp.74-77, ⟨10.1109/ESSDERC.2018.8486915⟩
Communication dans un congrès
hal-02007707v1
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Overestimation of Short-Channel Effects Due to Intergate Coupling in Advanced FD-SOI MOSFETsIEEE Transactions on Electron Devices, 2014, 61 (9), pp.3274 - 3281. ⟨10.1109/TED.2014.2338081⟩
Article dans une revue
hal-01643109v1
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Fully Depleted SOI Characterization by Capacitance Analysis of p-i-n Gated DiodesIEEE Electron Device Letters, 2015, 36 (1), pp.5 - 7. ⟨10.1109/LED.2014.2368596⟩
Article dans une revue
hal-01644390v1
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Doping profile extraction in thin SOI films: Application to A2RAM2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.1-4, ⟨10.1109/ULIS.2018.8354339⟩
Communication dans un congrès
hal-02050322v1
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Effect of back gate on parasitic bipolar effect in FD SOI MOSFETs2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2014, Millbrae, United States. pp.5.8, ⟨10.1109/S3S.2014.7028210⟩
Communication dans un congrès
hal-02003967v1
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The mystery of the Z 2 -FET 1T-DRAM memory2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.51-52, ⟨10.1109/ULIS.2017.7962598⟩
Communication dans un congrès
hal-02007047v1
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Body factor scaling in UTBB SOI with supercoupling effect2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.174-177, ⟨10.1109/ULIS.2016.7440081⟩
Communication dans un congrès
hal-02006211v1
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Competitive 1T-DRAM in 28 nm FDSOI technology for low-power embedded memory2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2016, Burlingame, United States. pp.1-2, ⟨10.1109/S3S.2016.7804402⟩
Communication dans un congrès
hal-02006297v1
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Back-gated InGaAs-on-insulator lateral N+NN+ MOSFET: Fabrication and typical conduction mechanismsSolid-State Electronics, 2017, 128, pp.80-86. ⟨10.1016/j.sse.2016.10.019⟩
Article dans une revue
hal-02003226v1
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Special characterization techniques for advanced FDSOI process2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2015, Rohnert Park, United States. pp.9a.1, ⟨10.1109/S3S.2015.7333543⟩
Communication dans un congrès
hal-02004273v1
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Thickness characterization by capacitance derivative in FDSOI p-i-n gated diodes2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, France. ⟨10.1109/ULIS.2015.7063745⟩
Communication dans un congrès
hal-01758618v1
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A surface potential based compact model for lightly doped FD SOI MOSFETs with ultra-thin body12th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2011, Cork, Ireland. pp.1-4, ⟨10.1109/ulis.2011.5757972⟩
Communication dans un congrès
hal-02066661v1
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Abnormal drain current (ADC) effect and its mechanism in FD SOI MOSFETsIEEE Electron Device Letters, 2006, 27, n± 2, pp.123-126
Article dans une revue
hal-00145459v1
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Scalability of MSD memory effect.Int. Conference on Ultimate Integration of Silicon, Aachen, Germany, Mar 2009, France. pp.139-142
Communication dans un congrès
hal-00604223v1
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Remote carrier trapping in FinFETs with ONO buried oxide : temperature effectsMicroelectronics Reliability, 2013, 53 (Issue3), pp.386-393. ⟨10.1016/j.microrel.2012.10.002⟩
Article dans une revue
istex
hal-01019931v1
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New concepts for 1T-DRAMs on SOI.Workshop on Innovative Memory Technology, MINATEC Crossroads'10, Jun 2010, Grenoble, France
Communication dans un congrès
hal-00604943v1
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Dynamic body potential variation in FD SOI MOSFETs operated in deep non-equilibrium regime : model and applicationsSolid-State Electronics, 2010, 54 (2), pp.104-114
Article dans une revue
hal-00596349v1
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Doping profile extraction in thin SOI films: Application to A2RAMSolid-State Electronics, 2019, 159, pp.3-11. ⟨10.1016/j.sse.2019.03.038⟩
Article dans une revue
hal-02321935v1
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Is there a kink effect in FDSOI MOSFETs?2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.212-215, ⟨10.1109/ULIS.2017.7962564⟩
Communication dans un congrès
hal-02007196v1
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New memory effect for fully depleted SOI MOSFET1st EUROSOI Workshop, 2005, XX, pp.XX
Article dans une revue
hal-00146189v1
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Modelling of Z2-FET memory cellSemiconductor Memories Workshop, 47th ESSDERC, Sep 2017, Leuven, Belgium
Communication dans un congrès
hal-02009931v1
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Beyond TFET: Alternative mechanisms for CMOS-compatible sharp-switching devices2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2014, Millbrae, United States. pp.5.12, ⟨10.1109/S3S.2014.7028228⟩
Communication dans un congrès
hal-02003987v1
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a new photodetector on SOI2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2018, San Francisco, United States. pp.18.5, ⟨10.1109/S3S.2018.8640169⟩
Communication dans un congrès
hal-02010253v1
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Sub-band modulated electronic transport in planar fully-depleted silicon-on-insulator MOSFETs2014 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD), Dec 2014, Perth, Australia. pp.294-297, ⟨10.1109/COMMAD.2014.7038715⟩
Communication dans un congrès
hal-02004000v1
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