Martin HYTCH
41
Documents
Présentation
Dr Martin Hytch develops quantitative electron microscopy techniques for materials science applications. After carrying out his thesis at the University of Cambridge on the quantitative analysis of high-resolution images (HRTEM) of compound semiconductors in 1991, he moved to France to work at the CECM-CNRS in Paris, where he subsequently joined the CNRS in 1995. He is notably the inventor of the Geometric Phase Analysis (GPA) technique for the determination of strain from high-resolution images and has applied the technique to a wide range of materials problems and nanostructures. He moved to the CEMES-CNRS in Toulouse in 2004 to work on aberration-corrected HRTEM and electron holography. In 2007, he invented the new technique of dark-field electron holography for the measurement of strain and in 2008, he was recipient of the prestigious European Microscopy Award (FEI-EMA), awarded every 4 years at the European Microscopy Congress. Between 2009 and 2014, he headed the nanomaterials group at the CEMES (30 permanent staff). He has authored or coauthored over 130 scientific papers and given 70 invited talks at conferences and workshops.
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MOCVD Grown InGaN/GaN Three-Dimensional Islands: Growth Approaches, Strain-Composition Characterization, Exploitation for LEDsEnergy Materials Nanotechnology (EMN), May 2016, Dubrovnik, Croatia
Communication dans un congrès
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Advanced characterization of semiconductorsXV B-MRS, Sep 2016, Campinas, Brazil
Communication dans un congrès
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Measurement of crystalline lattice strain by transmission electron microscopy”14ème colloque de la Société Française des Microscopies, Jun 2015, Nice, France
Communication dans un congrès
hal-01763051v1
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Realistic model of LED structure with InGaN quantum-dots active regionNanotechnology (IEEE-NANO) 2015 IEEE 15th International Conference on, 2015, Unknown, Unknown Region. pp.1543-1546, ⟨10.1109/NANO.2015.7388939⟩
Communication dans un congrès
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Strain imaging of processed layers and devices by dark field electron holographyCongress of the Electron Microscopy Society of India, Jul 2014, ??, India
Communication dans un congrès
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Deep green and monolithic white LEDs based on combination of short-period InGaN/GaN superlattice and InGaN QWsPHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, 2011, Seoul, France. pp.253-254, ⟨10.1063/1.3666350⟩
Communication dans un congrès
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Strain Mapping of Layers and Devices Using Electron HolographyECS Trans. 2010, 2010, Unknown, Unknown Region. ⟨10.1149/1.3487533⟩
Communication dans un congrès
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Optoelectronic structures with InAlN layers grown by MOVPE30th International Conference on the Physics of Semiconductors, Jul 2010, Séoul, South Korea. pp.107-108, ⟨10.1063/1.3666279⟩
Communication dans un congrès
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Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si SubstrateECS Transactions, May 2008, Unknown, Unknown Region. ⟨10.1149/1.2911510⟩
Communication dans un congrès
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Determination of strain within Si1-yCy layers grown by CVD on a Si substrateSymposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. pp.12-19, ⟨10.1557/PROC-1026-C07-03⟩
Communication dans un congrès
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Strained Si and Ge MOSFETs with high-K/metal gate stack for high mobility dual channel CMOSIEEE International Electron Devices Meeting, 2005, Dec 2005, Washington, United States. pp.137-140, ⟨10.1109/IEDM.2005.1609288⟩
Communication dans un congrès
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Dark-Field Electron Holography for Strain MappingAlain Claverie; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.81--106, 2013, ⟨10.1002/9781118579022.ch4⟩
Chapitre d'ouvrage
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