Martin HYTCH
10
Documents
Présentation
Dr Martin Hytch develops quantitative electron microscopy techniques for materials science applications. After carrying out his thesis at the University of Cambridge on the quantitative analysis of high-resolution images (HRTEM) of compound semiconductors in 1991, he moved to France to work at the CECM-CNRS in Paris, where he subsequently joined the CNRS in 1995. He is notably the inventor of the Geometric Phase Analysis (GPA) technique for the determination of strain from high-resolution images and has applied the technique to a wide range of materials problems and nanostructures. He moved to the CEMES-CNRS in Toulouse in 2004 to work on aberration-corrected HRTEM and electron holography. In 2007, he invented the new technique of dark-field electron holography for the measurement of strain and in 2008, he was recipient of the prestigious European Microscopy Award (FEI-EMA), awarded every 4 years at the European Microscopy Congress. Between 2009 and 2014, he headed the nanomaterials group at the CEMES (30 permanent staff). He has authored or coauthored over 130 scientific papers and given 70 invited talks at conferences and workshops.
Publications
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Growth parameters and tetragonality at the nanoscale of MBE epitaxial BaTiO3 films on SiEMRS Spring 2015, May 2015, Lille, France
Communication dans un congrès
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Molecular beam epitaxy of ferroelectric complex oxides on silicon19th Conference on "Insulating Films on Semiconductors (INFOS), Jul 2015, Udine, Italy
Communication dans un congrès
hal-01489594v1
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Strain and Cation Stoichiometry in Epitaxial BaTiO3 Thin Films Grown on SiliconMRS 2015 Fall Meeting, Nov 2015, Boston, United States
Communication dans un congrès
hal-01965445v1
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Complex oxides on semiconductors for nanoelectronic applicationsTMS 2015 144th Annual Meeting, 2015, Orlando, Fl, USA, United States
Communication dans un congrès
hal-01489569v1
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Epitaxial growth of BaTiO3 on Si and SOI by molecular beam epitaxy for ferroelectric applicationsISAF 2014, May 2014, Penn State University in State College, PA, USA, United States
Communication dans un congrès
hal-01489874v1
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Epitaxial growth of BaTiO3 on semiconductor substrates by molecular beam epitaxy for ferroelectric devicesEMRS 2014 Fall meeting, Sep 2014, Warsaw, Poland
Communication dans un congrès
hal-01489916v1
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Epitaxy of ferroelectric complex oxides on semiconductors for field-effect devices10th International Conference on Physics of Advanced Materials, Sep 2014, Iasi, Romania
Communication dans un congrès
hal-01965375v1
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Epitaxial growth by molecular beam epitaxy of ferroelectric BaTiO3 on siliconWorkshop “Les oxydes pour l’optique et la photonique”, 2014, Meudon, France
Communication dans un congrès
hal-01489873v1
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Local tetragonality of epitaxial BaTiO3 thin films on Si for ferroelectric applicationsIMC2014 - 18th International Microscopy congress, Sep 2014, Prague, Czech Republic
Communication dans un congrès
hal-01489876v1
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Monolithic integration of epitaxial BaTiO3 on Si and SiGe for ferroelectric devicesAVS 61st International Symposium, 2014, Baltimore, USA, United States
Communication dans un congrès
hal-01490296v1
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