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Martin HYTCH

25
Documents

Présentation

Dr Martin Hytch develops quantitative electron microscopy techniques for materials science applications. After carrying out his thesis at the University of Cambridge on the quantitative analysis of high-resolution images (HRTEM) of compound semiconductors in 1991, he moved to France to work at the CECM-CNRS in Paris, where he subsequently joined the CNRS in 1995. He is notably the inventor of the Geometric Phase Analysis (GPA) technique for the determination of strain from high-resolution images and has applied the technique to a wide range of materials problems and nanostructures. He moved to the CEMES-CNRS in Toulouse in 2004 to work on aberration-corrected HRTEM and electron holography. In 2007, he invented the new technique of dark-field electron holography for the measurement of strain and in 2008, he was recipient of the prestigious European Microscopy Award (FEI-EMA), awarded every 4 years at the European Microscopy Congress. Between 2009 and 2014, he headed the nanomaterials group at the CEMES (30 permanent staff). He has authored or coauthored over 130 scientific papers and given 70 invited talks at conferences and workshops.

Publications

alain-claverie
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Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs

Victor Boureau , Aurèle Durand , Patrice Gergaud , Delphine Le Cunff , Matthew Wormington
Journal of Applied Crystallography, 2020, 53 (4), pp.885-895. ⟨10.1107/S1600576720006020⟩
Article dans une revue hal-03001931v1
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Strain evolution of SiGe-on-insulator obtained by the Ge-condensation technique

Victor Boureau , Shay Reboh , Daniel Benoit , Martin Hÿtch , Alain Claverie
APL Materials, 2019, 7 (4), pp.041120. ⟨10.1063/1.5088441⟩
Article dans une revue hal-03015401v1

Strain/composition interplay in thin SiGe layers on insulator processed by Ge condensation

Victor Boureau , Daniel Benoit , Bénédicte Warot-Fonrose , Martin Hÿtch , Alain Claverie
Materials Science in Semiconductor Processing, 2016, 42, pp.251 - 254. ⟨10.1016/j.mssp.2015.07.034⟩
Article dans une revue hal-01707172v1

Mechanics of silicon nitride thin-film stressors on a transistor-like geometry

Shay Reboh , P. Morin , Martin Hÿtch , Florent Houdellier , Alain Claverie
APL Materials, 2013, 1 (4), ⟨10.1063/1.4826545⟩
Article dans une revue hal-01724108v1

Strain in hydrogen-implanted si investigated using dark-field electron holography

Nikolay Cherkashin , Shay Reboh , Axel Lubk , Martin Hÿtch , Alain Claverie
Applied Physics Express, 2013, 6 (9), ⟨10.7567/APEX.6.091301⟩
Article dans une revue hal-01736022v1
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Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Nikolay Cherkashin , Shay Reboh , Martin Hÿtch , Alain Claverie , V.V. Preobrazhenskii
Applied Physics Letters, 2013, 102 (17), pp.173115. ⟨10.1063/1.4804380⟩
Article dans une revue hal-01736028v1

Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy

L. Vincent , F. Fossard , T. Kociniewski , L. Largeau , Nikolay Cherkashin
Applied Surface Science, 2012, 258 (23), pp.9208-9212. ⟨10.1016/j.apsusc.2011.07.074⟩
Article dans une revue hal-01736031v1

Strain mapping in layers and devices by electron holography

Martin Hÿtch , Nikolay Cherkashin , Shay Reboh , Florent Houdellier , Alain Claverie
physica status solidi (a), 2011, 208 (3), pp.580-583. ⟨10.1002/pssa.201000281⟩
Article dans une revue hal-01736038v1
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End of range defects in Ge

S. Koffel , Nikolay Cherkashin , Florent Houdellier , Martin Hÿtch , Gérard Benassayag
Journal of Applied Physics, 2009, 105, pp.126110. ⟨10.1063/1.3153985⟩
Article dans une revue hal-01736054v1
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Strain mapping of tensiley strained silicon transistors with embedded Si1−yCy source and drain by dark-field holography

Florian Hüe , Martin Hÿtch , Florent Houdellier , Hugo Bender , Alain Claverie
Applied Physics Letters, 2009, 95 (7), pp.73103 - 73103. ⟨10.1063/1.3192356⟩
Article dans une revue hal-01742020v1
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On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

Nikolay Cherkashin , Martin Hÿtch , Florent Houdellier , Florian Hüe , Vincent Paillard
Applied Physics Letters, 2009, 94 (14), pp.141910. ⟨10.1063/1.3116648⟩
Article dans une revue hal-00417300v1

Selective growth of tensily strained Si1−yCy films on patterned Si substrates

A. Gouye , Florian Hüe , A. Halimaoui , O. Kermarrec , Y. Campidelli
Materials Science in Semiconductor Processing, 2009, 12 (1-2), pp.34 - 39. ⟨10.1016/j.mssp.2009.07.006⟩
Article dans une revue hal-01742015v1
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Direct Mapping of Strain in a Strained Silicon Transistor by High-Resolution Electron Microscopy

Florian Hüe , Martin Hÿtch , Hugo Bender , Florent Houdellier , Alain Claverie
Physical Review Letters, 2008, 100 (15), ⟨10.1103/PhysRevLett.100.156602⟩
Article dans une revue hal-01741994v1

Strain mapping in MOSFETS by high-resolution electron microscopy and electron holography

Florian Hüe , Martin Hÿtch , Florent Houdellier , Etienne Snoeck , Alain Claverie
Materials Science and Engineering: B, 2008, 154-155, pp.221 - 224. ⟨10.1016/j.mseb.2008.10.020⟩
Article dans une revue hal-01742010v1

Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates

Nikolay Cherkashin , Martin Hÿtch , Etienne Snoeck , Florian Hüe , J.M. Hartmann
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.145-148. ⟨10.1016/j.nimb.2006.10.051⟩
Article dans une revue hal-01736071v1

Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate

Nikolay Cherkashin , Martin Hÿtch , Etienne Snoeck , Alain Claverie , J.M. Hartmann
Materials Science and Engineering: B, 2005, 124-125, pp.118--122. ⟨10.1016/j.mseb.2005.08.054⟩
Article dans une revue hal-01736084v1

Structure determination of clusters formed in ultra-low energy high-dose implanted silicon

Nikolay Cherkashin , Martin Hÿtch , Fuccio Cristiano , Alain Claverie
Solid State Phenomena, 2005, 108-109, pp.303-308. ⟨10.4028/www.scientific.net/SSP.108-109.303⟩
Article dans une revue hal-01736085v1

Combining high-resolution X-ray reciprocal space mapping and dark-field electron holography for strain analysis in 20 nm pMOS structures

Aurèle Durand , Victor Boureau , Delphine Lecunff , Axel Hourtane , Daniel Benoit
Nanotechnology (IEEE-NANO) 2015 IEEE 15th International Conference on, 2015, Unknown, Unknown Region. pp.785-788, ⟨10.1109/NANO.2015.7388727⟩
Communication dans un congrès hal-01719495v1

Process induced strains in FDSOI devices: a contribution of dark-field electron holography

Victor Boureau , Martin Hÿtch , Benoit Daniel , Alain Claverie
Micro and Nano 2015, Oct 2015, Athenes, Greece
Communication dans un congrès hal-01763625v1

Germanium condensation for co-integration: Strain study by dark-field electron holography

Victor Boureau , Daniel Benoit , Bénédicte Warot-Fonrose , Martin Hÿtch , Alain Claverie
Nanotechnology Materials and Devices Conference (NMDC), 2014 IEEE 9th, 2014, Unknown, Unknown Region. pp.34-36, ⟨10.1109/NMDC.2014.6997415⟩
Communication dans un congrès hal-01719498v1

Strain imaging of processed layers and devices by dark field electron holography

Alain Claverie , Victor Boureau , Martin Hÿtch , Nikolay Cherkashin
Congress of the Electron Microscopy Society of India, Jul 2014, ??, India
Communication dans un congrès hal-01763638v1

Strain Mapping of Layers and Devices Using Electron Holography

Alain Claverie , Nikolay Cherkashin , Florian Hüe , Shay Reboh , Florent Houdellier
ECS Trans. 2010, 2010, Unknown, Unknown Region. ⟨10.1149/1.3487533⟩
Communication dans un congrès hal-01736051v1

Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si Substrate

Nikolay Cherkashin , Adrien Gouye , Florian Hüe , Florent Houdellier , Martin Hÿtch
ECS Transactions, May 2008, Unknown, Unknown Region. ⟨10.1149/1.2911510⟩
Communication dans un congrès hal-01736065v1

Determination of strain within Si1-yCy layers grown by CVD on a Si substrate

Nikolay Cherkashin , A. Gouye , Florian Hüe , Florent Houdellier , Martin Hÿtch
Symposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. pp.12-19, ⟨10.1557/PROC-1026-C07-03⟩
Communication dans un congrès hal-01736057v1

Dark-Field Electron Holography for Strain Mapping

Martin Hÿtch , Florent Houdellier , Nikolay Cherkashin , Shay Reboh , Elsa Javon
Alain Claverie; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.81--106, 2013, ⟨10.1002/9781118579022.ch4⟩
Chapitre d'ouvrage hal-01736026v1