Co-auteurs

Nombre de documents

96

Martin Hytch


Dr Martin Hytch develops quantitative electron microscopy techniques for materials science applications. After carrying out his thesis at the University of Cambridge on the quantitative analysis of high-resolution images (HRTEM) of compound semiconductors in 1991, he moved to France to work at the CECM-CNRS in Paris, where he subsequently joined the CNRS in 1995. He is notably the inventor of the Geometric Phase Analysis (GPA) technique for the determination of strain from high-resolution images and has applied the technique to a wide range of materials problems and nanostructures. He moved to the CEMES-CNRS in Toulouse in 2004 to work on aberration-corrected HRTEM and electron holography. In 2007, he invented the new technique of dark-field electron holography for the measurement of strain and in 2008, he was recipient of the prestigious European Microscopy Award (FEI-EMA), awarded every 4 years at the European Microscopy Congress. Between 2009 and 2014, he headed the nanomaterials group at the CEMES (30 permanent staff). He has authored or coauthored over 130 scientific papers and given 70 invited talks at conferences and workshops.


Article dans une revue68 documents

  • D. Barettin, M.A.D. Maur, A.D. Di Carlo, A. Pecchia, A.F. Tsatsulnikov, et al.. Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes. Nanotechnology, Institute of Physics, 2017, 28 (1), 〈10.1088/0957-4484/28/1/015701〉. 〈hal-01736015〉
  • Daniele Barettin, Matthias Auf Der Maur, Aldo Di Carlo, Alessandro Pecchia, Andrei F Tsatsulnikov, et al.. Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes. Nanotechnology, Institute of Physics, 2017, 28 (27), 〈10.1088/1361-6528/aa75a8〉. 〈hal-01736017〉
  • Thibaud Denneulin, Wanjoo Maeng, Chang-Beom Eom, Martin Hÿtch. Lattice reorientation in tetragonal PMN-PT thin film induced by focused ion beam preparation for transmission electron microscopy. Journal of Applied Physics, American Institute of Physics, 2017, 121 (5), pp.055302. 〈10.1063/1.4975114〉. 〈hal-01707818〉
  • Nikolay Cherkashin, Thibaud Denneulin, Martin Hÿtch. Electron microscopy by specimen design: application to strain measurements. Scientific Reports, Nature Publishing Group, 2017, 7 (1), pp.12394 - 12394. 〈10.1038/s41598-017-12695-8〉. 〈hal-01707848〉
  • Thibaud Denneulin, Florent Houdellier, Martin Hÿtch. Differential phase-contrast dark-field electron holography for strain mapping. Ultramicroscopy, 2016, 160, pp.98-109. 〈10.1016/j.ultramic.2015.10.002〉. 〈hal-01723740〉
  • Falk Röder, Florent Houdellier, Thibaud Denneulin, Etienne Snoeck, Martin Hÿtch. Realization of a tilted reference wave for electron holography by means of a condenser biprism. Ultramicroscopy, Elsevier, 2016, 161, pp.23 - 40. 〈10.1016/j.ultramic.2015.11.004〉. 〈hal-01404505〉
  • Charudatta Phatak, Ludvig De Knoop, Florent Houdellier, Christophe Gatel, Martin Hÿtch, et al.. Quantitative 3D electromagnetic field determination of 1D nanostructures from single projection. Ultramicroscopy, Elsevier, 2016, 164, pp.24--30. 〈10.1016/j.ultramic.2016.03.005〉. 〈hal-01430579〉
  • Victor Boureau, Daniel Benoit, Bénédicte Warot-Fonrose, Martin Hÿtch, Alain Claverie. Strain/composition interplay in thin SiGe layers on insulator processed by Ge condensation. Materials Science in Semiconductor Processing, Elsevier, 2016, 42, pp.251 - 254. 〈10.1016/j.mssp.2015.07.034〉. 〈hal-01707172〉
  • Andrei F. Tsatsulnikov, Wsevolod V. Lundin, Alexei V. Sakharov, Andrey E. Nikolaev, E.E. Zavarin, et al.. Formation of three-dimensional islands in the active region of InGaN based light emitting diodes using a growth interruption approach. SCIENCE OF ADVANCED MATERIALS, 2015, 7 (8), pp.1629-1635. 〈10.1166/sam.2015.2277〉. 〈hal-01721151〉
  • Florent Houdellier, Ludvig De Knoop, Christophe Gatel, Aurélien Masseboeuf, S Mamishin, et al.. Development of TEM and SEM high brightness electron guns using cold-field emission from a carbon nanotip. Ultramicroscopy, Elsevier, 2015, 151, pp.107--115. 〈10.1016/j.ultramic.2014.11.021〉. 〈hal-01430585〉
  • Ludvig De Knoop, Christophe Gatel, Florent Houdellier, Marc Monthioux, Aurélien Masseboeuf, et al.. Low-noise cold-field emission current obtained between two opposed carbon cone nanotips during in situ transmission electron microscope biasing. Applied Physics Letters, American Institute of Physics, 2015, 106 (26), pp.263101. 〈10.1063/1.4923245〉. 〈hal-01430586v2〉
  • Charudatta Phatak, Aurélien Masseboeuf, Ludvig De Knoop, Christophe Gatel, Martin Hÿtch. Three Dimensional Visualization of Electromagnetic Fields from One Dimensional Nanostructures. Microscopy and Microanalysis, Cambridge University Press (CUP), 2015, 21 (S3), pp.1977--1978. 〈10.1017/S1431927615010661〉. 〈hal-01430587〉
  • Konstantinos Pantzas, Gilles Patriarche, David Troadec, Mathieu Kociak, Nikolay Cherkashin, et al.. Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys. Journal of Applied Physics, American Institute of Physics, 2015, 117 (5), pp.55705. 〈10.1063/1.4907210〉. 〈hal-01721149〉
  • Etienne Snoeck, Florent Houdellier, Yoshifumi Taniguch, Aurélien Masseboeuf, Christophe Gatel, et al.. Off-Axial Aberration Correction using a B-COR for Lorentz and HREM Modes. Microscopy and Microanalysis, Cambridge University Press (CUP), 2014, 20 (S3), pp.932--933. 〈10.1017/S1431927614006382〉. 〈hal-01430589〉
  • Ludvig De Knoop, Florent Houdellier, Christophe Gatel, Aurélien Masseboeuf, Marc Monthioux, et al.. Determining the work function of a carbon-cone cold-field emitter by in situ electron holography. Micron, Elsevier, 2014, 63, pp.2--8. 〈10.1016/j.micron.2014.03.005〉. 〈hal-01430588〉
  • Elsa Javon, Axel Lubk, Robin Cours, Shay Reboh, Nikolay Cherkashin, et al.. Dynamical effects in strain measurements by dark-field electron holography. Ultramicroscopy, Elsevier, 2014, 147, pp.70-85. 〈10.1016/j.ultramic.2014.06.005〉. 〈hal-01721158〉
  • Junxian Zhang, Michel Latroche, Cesar Magen, Virginie Serin, Martin Hÿtch, et al.. Investigation of the phase occurrence, H sorption properties, and electrochemical behavior in the composition ranges La0.75-0.80Mg0.30-0.38Ni3.67. Journal of Physical Chemistry C, 2014, 118 (48), pp.27808-27814. 〈10.1021/jp510313a〉. 〈hal-01760672〉
  • Martin Hÿtch, Christophe Gatel, Axel Lubk, Thibaud Denneulin, Lise Durand, et al.. Local strain measurements at dislocations, disclinations and domain boundaries. Microscopy and Microanalysis, Cambridge University Press (CUP), 2014, 20 (3), pp.1044-1045. 〈10.1017/S1431927614006941〉. 〈hal-01721157〉
  • Axel Lubk, Elsa Javon, Nikolay Cherkashin, Shay Reboh, Christophe Gatel, et al.. Dynamic scattering theory for dark-field electron holography of 3D strain fields. Ultramicroscopy, Elsevier, 2014, 136, pp.42-49. 〈10.1016/j.ultramic.2013.07.007〉. 〈hal-01721153〉
  • Shay Reboh, P. Morin, Martin Hÿtch, Florent Houdellier, Alain Claverie. Mechanics of silicon nitride thin-film stressors on a transistor-like geometry. APL MATERIALS, 2013, 1 (4), 〈10.1063/1.4826545〉. 〈hal-01724108〉
  • Nikolay Cherkashin, Shay Reboh, Axel Lubk, Martin Hÿtch, Alain Claverie. Strain in hydrogen-implanted si investigated using dark-field electron holography. Applied Physics Express, IOPScience - Japan Society of Applied Physics, 2013, 6 (9), 〈10.7567/APEX.6.091301〉. 〈hal-01736022〉
  • Nikolay Cherkashin, Shay Reboh, Martin Hÿtch, Alain Claverie, V.V. Preobrazhenskii, et al.. Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy. Applied Physics Letters, American Institute of Physics, 2013, 102 (17), pp.173115. 〈10.1063/1.4804380〉. 〈hal-01736028〉
  • Axel Lubk, Falk Röder, Tore Niermann, Christophe Gatel, Sébastien Joulié, et al.. A new linear transfer theory and characterization method for image detectors. Part II: Experiment. Ultramicroscopy, Elsevier, 2012, 115, pp.78 - 87. 〈10.1016/j.ultramic.2012.01.011〉. 〈hal-01742051〉
  • Florent Houdellier, Aurélien Masseboeuf, M. Monthioux, Martin Hÿtch. New carbon cone nanotip for use in a highly coherent cold field emission electron microscope. Carbon, Elsevier, 2012, 50 (5), pp.2037-2044. 〈10.1016/j.carbon.2012.01.023〉. 〈hal-00678407〉
  • A.F. Tsatsulnikov, W.V. Lundin, A.V. Sakharov, E.E. Zavarin, S.O. Usov, et al.. Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs. Physica Status Solidi (C) Current Topics in Solid State Physics, 2012, 9 (3-4), pp.774-777. 〈10.1002/pssc.201100339〉. 〈hal-01736032〉
  • L. Vincent, F. Fossard, T. Kociniewski, L. Largeau, Nikolay Cherkashin, et al.. Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy. Applied Surface Science, Elsevier, 2012, 258 (23), pp.9208-9212. 〈10.1016/j.apsusc.2011.07.074〉. 〈hal-01736031〉
  • V.M. Ustinov, A.F. Tsatsulnikov, V.V. Lundin, A.V. Sakharov, A.E. Nikolaev, et al.. Monolithic white LEDs: Approaches, technology, design. Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, Springer Verlag, 2012, 6 (3), pp.501-504. 〈10.1134/S1027451012060237〉. 〈hal-01736030〉
  • Nikolay Cherkashin, O. Kononchuk, Shay Reboh, Martin Hÿtch. Application of the O-lattice theory for the reconstruction of the high-angle near 90? tilt Si(1 1 0)/(0 0 1) boundary created by wafer bonding. Acta Materialia, Elsevier, 2012, 60 (3), pp.1161-1173. 〈10.1016/j.actamat.2011.10.054〉. 〈hal-01736034〉
  • W.V. Lundin, A.E. Nikolaev, A.V. Sakharov, E.E. Zavarin, G.A. Valkovskiy, et al.. Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice. Journal of Crystal Growth, Elsevier, 2011, 315 (1), pp.267--271. 〈10.1016/j.jcrysgro.2010.09.043〉. 〈hal-01736042〉
  • Martin Hÿtch, Nikolay Cherkashin, Shay Reboh, Florent Houdellier, Alain Claverie. Strain mapping in layers and devices by electron holography. Physica Status Solidi (A) Applications and Materials Science, 2011, 208 (3), pp.580-583. 〈10.1002/pssa.201000281〉. 〈hal-01736038〉
  • Martin Hÿtch, Florent Houdellier, Florian Hüe, Etienne Snoeck. Dark-field electron holography for the measurement of geometric phase. Ultramicroscopy, Elsevier, 2011, 111 (8), pp.1328 - 1337. 〈10.1016/j.ultramic.2011.04.008〉. 〈hal-01742047〉
  • A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, et al.. InGaN/GaN short-period superlattices: synthesis, properties, applications. physica status solidi (c), Wiley, 2011, 8 (7-8), pp.2308--2310. 〈10.1002/pssc.201001040〉. 〈hal-01736040〉
  • Nikolay Cherkashin, O. Kononchuk, Martin Hÿtch. Reconstruction of a high angle tilt (110)/(001) boundary in Si using O-lattice theory. Solid State Phenomena, 2011, 178-179, pp.489-494. 〈10.4028/www.scientific.net/SSP.178-179.489〉. 〈hal-01736039〉
  • V.S. Sizov, A.F. Tsatsulnikov, A.V. Sakharov, W.V. Lundin, E.E. Zavarin, et al.. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes. Semiconductors, 2010, 44 (7), pp.924-930. 〈10.1134/S106378261007016X〉. 〈hal-01736047〉
  • A.F. Tsatsul'Nikov, E.E. Zavarin, N.V. Kryzhanovskaya, W.V. Lundin, A.V. Saharov, et al.. Formation of composite InGaN/GaN/InAlN quantum dots. Semiconductors, 2010, 44 (10), pp.1338-1341. 〈10.1134/S1063782610100167〉. 〈hal-01736045〉
  • M. Hartmann, L. Sanchez, W. Van den Daele, A. Abadie, L. Baud, et al.. Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates.. Semiconductor Science & Technology, 2010, 25, pp.075010. 〈hal-00596336〉
  • A.F. Tsatsulnikov, W.V. Lundin, A.V. Sakharov, E.E. Zavarin, S.O. Usov, et al.. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes. Semiconductors, 2010, 44 (1), pp.93-97. 〈10.1134/S1063782610010161〉. 〈hal-01736052〉
  • Marie-José Casanove, Nicolas Combe, Florent Houdellier, Martin Hÿtch. Visualising alloy fluctuations by spherical-aberration–corrected HRTEM. EPL - Europhysics Letters, European Physical Society/EDP Sciences/Società Italiana di Fisica/IOP Publishing, 2010, 91 (3), 〈10.1209/0295-5075/91/36001〉. 〈hal-01742039〉
  • J.M. Hartmann, M. Py, P.H. Morel, T. Ernst, B. Prévitali, et al.. Cyclic Deposition / Etch processes for the formation of Si raised sources and drains in advanced MOSFETs. ECS Transactions, Electrochemical Society, Inc., 2010, 33 (6), pp.391-407. 〈10.1149/1.3487570 〉. 〈hal-01736046〉
  • Martin Hÿtch, Florent Houdellier, Florian Hüe, Etienne Snoeck. Dark-field electron holography for the mapping of strain in nanostructures: correcting artefacts and aberrations. Journal of Physics: Conference Series, IOP Publishing, 2010, 241, 〈10.1088/1742-6596/241/1/012027〉. 〈hal-01742031〉
  • Nikolay Cherkashin, Martin Hÿtch, Florent Houdellier, Florian Hüe, Vincent Paillard, et al.. On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates. Applied Physics Letters, American Institute of Physics, 2009, 94 (14), pp.141910. 〈10.1063/1.3116648〉. 〈hal-00417300〉
  • A. Gouye, Florian Hüe, A. Halimaoui, O. Kermarrec, Y. Campidelli, et al.. Selective growth of tensily strained Si1−yCy films on patterned Si substrates. Materials Science in Semiconductor Processing, Elsevier, 2009, 12 (1-2), pp.34 - 39. 〈10.1016/j.mssp.2009.07.006〉. 〈hal-01742015〉
  • S. Koffel, Nikolay Cherkashin, Florent Houdellier, Martin Hÿtch, Gérard Benassayag, et al.. End of range defects in Ge. Journal of Applied Physics, American Institute of Physics, 2009, 105, pp.126110. 〈10.1063/1.3153985〉. 〈hal-01736054〉
  • Florian Hüe, Martin Hÿtch, Florent Houdellier, Hugo Bender, Alain Claverie. Strain mapping of tensiley strained silicon transistors with embedded Si1−yCy source and drain by dark-field holography. Applied Physics Letters, American Institute of Physics, 2009, 95 (7), pp.73103 - 73103. 〈10.1063/1.3192356〉. 〈hal-01742020〉
  • A.V. Sakharov, W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, A.E. Nikolaev, et al.. Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs. Semiconductors, 2009, 43 (6), pp.812-817. 〈10.1134/S1063782609060232〉. 〈hal-01736055〉
  • Florian Hüe, Martin Hÿtch, Hugo Bender, Florent Houdellier, Alain Claverie. Direct Mapping of Strain in a Strained Silicon Transistor by High-Resolution Electron Microscopy. Physical Review Letters, American Physical Society, 2008, 100 (15), 〈10.1103/PhysRevLett.100.156602〉. 〈hal-01741994〉
  • Martin Hÿtch, Florent Houdellier, Florian Hüe, Etienne Snoeck. Nanoscale holographic interferometry for strain measurements in electronic devices. Nature, Nature Publishing Group, 2008, 453 (7198), pp.1086 - 1089. 〈10.1038/nature07049〉. 〈hal-01742001〉
  • D. Cammilleri, V. Yam, F. Fossard, C. Renard, D. Bouchier, et al.. Lateral epitaxial growth of germanium on silicon oxide. Applied Physics Letters, American Institute of Physics, 2008, 93 (4), pp.43110 - 43110. 〈10.1063/1.2963363〉. 〈hal-01742002〉
  • Florian Hüe, Martin Hÿtch, Florent Houdellier, Etienne Snoeck, Alain Claverie. Strain mapping in MOSFETS by high-resolution electron microscopy and electron holography. Materials Science and Engineering: B, Elsevier, 2008, 154-155, pp.221 - 224. 〈10.1016/j.mseb.2008.10.020〉. 〈hal-01742010〉
  • V. D. Cammilleri, V. Yam, F. Fossard, C. Renard, D. Bouchier, et al.. Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor deposition. Materials Science in Semiconductor Processing, Elsevier, 2008, 11 (5-6), pp.214-216. 〈10.1016/j.mssp.2008.07.003〉. 〈hal-01293141〉
  • Florent Houdellier, Martin Hÿtch. Diffracted phase and amplitude measurements by energy-filtered convergent-beam holography (CHEF). Ultramicroscopy, Elsevier, 2008, 108 (3), pp.285 - 294. 〈10.1016/j.ultramic.2007.08.016〉. 〈hal-01707842〉
  • Bénédicte Warot-Fonrose, Florent Houdellier, Martin Hÿtch, Lionel Calmels, Virginie Serin, et al.. Mapping inelastic intensities in diffraction patterns of magnetic samples using the energy spectrum imaging technique. Ultramicroscopy, Elsevier, 2008, 108 (5), pp.393 - 398. 〈10.1016/j.ultramic.2007.05.013〉. 〈hal-01707847〉
  • Lionel Calmels, Florent Houdellier, Bénédicte Warot-Fonrose, Christophe Gatel, Martin Hÿtch, et al.. Experimental application of sum rules for electron energy loss magnetic chiral dichroism. Physical Review B : Condensed matter and materials physics, American Physical Society, 2007, 76 (6), 〈10.1103/PhysRevB.76.060409〉. 〈hal-01741982〉
  • Florent Houdellier, Martin Hÿtch. Mapping stress and strain in nanostructures by high-resolution transmission electron microscopy. Microelectronic Engineering, Elsevier, 2007, 84 (3), pp.460 - 463. 〈10.1016/j.mee.2006.10.062〉. 〈hal-01741980〉
  • Mohamed Sennour, Sylvie Lartigue-Korinek, Yannick Champion, Martin Hÿtch. HRTEM study of defects in twin boundaries of ultra fine grained copper. Philosophical Magazine, Taylor & Francis, 2007, 87 (10), pp.1465-1486. 〈10.1080/14786430601021611〉. 〈hal-00513787〉
  • M.B. Cardoso, J.L. Putaux, Y. Nishiyama, W. Helbert, Martin Hÿtch, et al.. Single crystals of V amylose complexed with a-naphthol. Biomacromolecules, American Chemical Society, 2007, pp.1319-1326. 〈hal-00305577〉
  • Florent Houdellier, Martin Hÿtch, Etienne Snoeck, Marie-José Casanove. High-resolution electron holography for the study of composition and strain in thin film semiconductors. Materials Science and Engineering: B, Elsevier, 2006, 135 (3), pp.188 - 191. 〈10.1016/j.mseb.2006.08.035〉. 〈hal-01741978〉
  • Nikolay Cherkashin, Martin Hÿtch, Etienne Snoeck, Florian Hüe, J.M. Hartmann, et al.. Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.145-148. 〈10.1016/j.nimb.2006.10.051〉. 〈hal-01736071〉
  • Martin Hÿtch, J.L. Putaux, J. Thibault. Stress and strain around grain-boundary dislocations measured by high-resolution electron microscopy. Philos. Mag., 2006, pp.4641-4656. 〈hal-00305795〉
  • Martin Hÿtch, Jean-Luc Putaux, Jany Thibault. Stress and strain around grain-boundary dislocations measured by high-resolution electron microscopy. Philosophical Magazine, Taylor & Francis, 2006, 86 (29-31), pp.4641-4656. 〈10.1080/14786430600743876〉. 〈hal-00513705〉
  • Etienne Snoeck, Jérôme Majimel, M. O. Ruault, Martin Hÿtch. Characterization of helium bubble size and faceting by electron holography. Journal of Applied Physics, American Institute of Physics, 2006, vol. 100, n° 2 (2), p. 023519 (5 p.). 〈10.1063/1.2216791〉. 〈hal-00090302〉
  • Nikolay Cherkashin, Martin Hÿtch, Fuccio Cristiano, A. Claverie. Structure determination of clusters formed in ultra-low energy high-dose implanted silicon. Solid State Phenomena, 2005, 108-109, pp.303-308. 〈10.4028/www.scientific.net/SSP.108-109.303〉. 〈hal-01736085〉
  • Martin Hÿtch, J.L. Putaux, J.M. Penisson. Nanoscale measurement of stress and strain by quantitative high-resolution electron microscopy. Mater. Sci. Forum, 2005, pp.39-44. 〈hal-00305967〉
  • Nikolay Cherkashin, Martin Hÿtch, Etienne Snoeck, Alain Claverie, J.M. Hartmann, et al.. Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate. Materials Science and Engineering: B, Elsevier, 2005, 124-125, pp.118--122. 〈10.1016/j.mseb.2005.08.054〉. 〈hal-01736084〉
  • Martin Hÿtch, J.L. Putaux, J.M. Penisson. Measurement of the displacement field of dislocations to 0.03 Å by electron microscopy. Nature, Nature Publishing Group, 2003, pp.270-273. 〈hal-00306927〉
  • N. Guigue-Millot, Sylvie Begin-Colin, Y. Champion, Martin Hÿtch, Gérard Le Caër, et al.. Control of grain size and morphologies of nanograined ferrites by adaptation of the synthesis route. Mechanosynthesis and soft chemistry. Journal of Solid State Chemistry, Elsevier, 2003, pp.30-38. 〈hal-00475138〉
  • N. Guigue-Millot, Y. Champion, Martin Hÿtch, F. Bernard, Sylvie Begin-Colin, et al.. Chemical heterogeneities in nanometric titanomagnetites prepared by soft chemistry and studied ex situ : evidence for fe-segregation and oxidation kinetics. Journal of Physical Chemistry B, American Chemical Society, 2001, pp.7125-7132. 〈hal-00475337〉
  • M. Walls, J.-P. Chevalier, Martin Hÿtch. Transmission Electron Microscopy of Metallic Multilayers. Journal de Physique IV Colloque, 1996, 06 (C7), pp.C7-213-C7-223. 〈10.1051/jp4:1996728〉. 〈jpa-00254516〉

Communication dans un congrès25 documents

  • Nikolay Cherkashin, François-Xavier Darras, Maxim Korytov, Christophe Gatel, Martin Hÿtch. Advanced characterization of semiconductors. XV B-MRS, Sep 2016, Campinas, Brazil. 〈hal-01767758〉
  • Nikolay Cherkashin, Martin Hÿtch, M Korytov, Daniele Barettin, A. V. Sakharov, et al.. MOCVD Grown InGaN/GaN Three-Dimensional Islands: Growth Approaches, Strain-Composition Characterization, Exploitation for LEDs . Energy Materials Nanotechnology (EMN), May 2016, Dubrovnik, Croatia. 〈http://emnmeeting.org/croatia/〉. 〈hal-01763074〉
  • Daniele Barettin, Matthias Auf Der Maur, Alessandro Pecchia, Walter Rodrigues, Andrei F. Tsatsulnikov, et al.. Realistic model of LED structure with InGaN quantum-dots active region. Nanotechnology (IEEE-NANO) 2015 IEEE 15th International Conference on, 2015, Unknown, Unknown or Invalid Region. pp.1543-1546, 2015, 〈10.1109/NANO.2015.7388939〉. 〈hal-01721150〉
  • Aurèle Durand, Victor Boureau, Delphine Lecunff, Axel Hourtane, Daniel Benoit, et al.. Combining high-resolution X-ray reciprocal space mapping and dark-field electron holography for strain analysis in 20 nm pMOS structures. Nanotechnology (IEEE-NANO) 2015 IEEE 15th International Conference on, 2015, Unknown, Unknown or Invalid Region. Institute of Electrical and Electronics Engineers Inc., pp.785-788, 2015, 〈10.1109/NANO.2015.7388727〉. 〈hal-01719495〉
  • Nikolay Cherkashin, Florent Houdellier, Martin Hÿtch, M Korytov. Measurement of crystalline lattice strain by transmission electron microscopy”. 14ème colloque de la Société Française des Microscopies, Jun 2015, Nice, France. 〈http://www.crhea.cnrs.fr/sfmu2015/ 〉. 〈hal-01763051〉
  • Catherine Dubourdieu, Lucie Mazet, S. Yang, R. Cours, Romain Bachelet, et al.. Molecular beam epitaxy of ferroelectric complex oxides on silicon. 19th Conference on "Insulating Films on Semiconductors (INFOS), 2015, Udine, Italy. 2015. 〈hal-01489594〉
  • Lucie Mazet, Romain Bachelet, Guillaume Saint-Girons, Martin Hÿtch, Sylvie Schamm-Chardon, et al.. Complex oxides on semiconductors for nanoelectronic applications. TMS 2015 conference, 2015, Orlando, (USA), Unknown or Invalid Region. 2015. 〈hal-01489568〉
  • Lucie Mazet, Romain Bachelet, Guillaume Saint-Girons, Martin Hÿtch, Sylvie Schamm-Chardon, et al.. Complex oxides on semiconductors for nanoelectronic applications. TMS 2015 144th Annual Meeting, 2015, Orlando, Fl, USA, Unknown or Invalid Region. 2015. 〈hal-01489569〉
  • Victor Boureau, Martin Hÿtch, Benoit Daniel, Alain Claverie. Process induced strains in FDSOI devices: a contribution of dark-field electron holography . Micro and Nano 2015, Oct 2015, Athenes, Greece. 〈hal-01763625〉
  • Victor Boureau, Daniel Benoit, Bénédicte Warot-Fonrose, Martin Hÿtch, Alain Claverie. Germanium condensation for co-integration: Strain study by dark-field electron holography. Nanotechnology Materials and Devices Conference (NMDC), 2014 IEEE 9th, 2014, Unknown, Unknown or Invalid Region. Institute of Electrical and Electronics Engineers Inc., pp.34-36, 2014, 〈10.1109/NMDC.2014.6997415〉. 〈hal-01719498〉
  • Lucie Mazet, Romain Bachelet, Guillaume Saint-Girons, M. Yang, S. Kalinin, et al.. Epitaxial growth by molecular beam epitaxy of ferroelectric BaTiO3 on silicon. Workshop “Les oxydes pour l’optique et la photonique”, 2014, Meudon, (France)., Unknown or Invalid Region. 2014. 〈hal-01489873〉
  • Sylvie Schamm-Chardon, T. Denneulin, Martin Hÿtch, Lucie Mazet, Romain Bachelet, et al.. Local tetragonality of epitaxial BaTiO3 thin films on Si for ferroelectric applications. 18th international Microscopy congress, 2014, Prag, Czech Republic. 2014. 〈hal-01489876〉
  • Alain Claverie, Victor Boureau, Martin Hÿtch, Nikolay Cherkashin. Strain imaging of processed layers and devices by dark field electron holography. Congress of the Electron Microscopy Society of India, Jul 2014, ??, India. 〈hal-01763638〉
  • Lucie Mazet, Romain Bachelet, Lamis Louahadj, Sylvie Schamm-Chardon, Martin Hÿtch, et al.. Epitaxial growth of BaTiO3 on Si and SOI by molecular beam epitaxy for ferroelectric applications. ISAF 2014, 2014, Penn State University in State College, PA, USA, Unknown or Invalid Region. 2014. 〈hal-01489874〉
  • Lucie Mazet, Romain Bachelet, Lamis Louahadj, Claude Botella, M. Frank, et al.. Epitaxial growth of BaTiO3 on semiconductor substrates by molecular beam epitaxy for ferroelectric devices. EMRS 2014 Fall meeting, 2014, Warsaw, Poland. 2014. 〈hal-01489916〉
  • Lucie Mazet, Romain Bachelet, Lamis Louahadj, Sylvie Schamm-Chardon, Martin Hÿtch, et al.. Epitaxial growth of BaTiO3 on Si and SOI by molecular beam epitaxy for ferroelectric applications. ISAF 2014, 2014, Penn State University, PA, (USA), Unknown or Invalid Region. 2014. 〈hal-01489915〉
  • David Albertini, Brice Gautier, J. Jordan-Sweet, M. Frank, V. Narayanan, et al.. Epitaxy of ferroelectric complex oxides on semiconductors for field-effect devices. 10th International Conference on Physics of Advanced Materials, 2014, Iasi, Romania. 2014. 〈hal-01490287〉
  • Lucie Mazet, Romain Bachelet, Guillaume Saint-Girons, David Albertini, Brice Gautier, et al.. Monolithic integration of epitaxial BaTiO3 on Si and SiGe for ferroelectric devices. AVS 61st International Symposium, 2014, Baltimore, USA, Unknown or Invalid Region. 2014. 〈hal-01490296〉
  • A.F. Tsatsulnikov, W.V. Lundin, A.V. Sakharov, E.E. Zavarin, S.O. Usov, et al.. Deep green and monolithic white LEDs based on combination of short-period InGaN/GaN superlattice and InGaN QWs. PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, 2011, Seoul, France. AIP conference proceedings, 1399, pp.253-254, 2011, PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. 〈10.1063/1.3666350〉. 〈hal-01736043〉
  • Alain Claverie, Nikolay Cherkashin, Florian Hüe, Shay Reboh, Florent Houdellier, et al.. Strain Mapping of Layers and Devices Using Electron Holography. ECS Trans. 2010, 2010, Unknown, Unknown or Invalid Region. The Electrochemical Society, 2010, 〈10.1149/1.3487533〉. 〈hal-01736051〉
  • A.V. Sakharov, W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, S.O. Usov, et al.. Optoelectronic structures with InAlN layers grown by MOVPE. Jisoon Ihm, Hyeonsik Cheong. 30th International Conference on the Physics of Semiconductors, Jul 2010, Séoul, South Korea. AIP, AIP Conference Proceedings, 1399, pp.107-108, 2011, 〈10.1063/1.3666279〉. 〈hal-01736041〉
  • Nikolay Cherkashin, Adrien Gouye, Florian Hüe, Florent Houdellier, Martin Hÿtch, et al.. Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si Substrate. ECS Transactions, May 2008, Unknown, Unknown or Invalid Region. The Electrochemical Society, 2008, 〈10.1149/1.2911510〉. 〈hal-01736065〉
  • Nikolay Cherkashin, A. Gouye, Florian Hüe, Florent Houdellier, Martin Hÿtch, et al.. Determination of strain within Si1-yCy layers grown by CVD on a Si substrate. Symposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. 1026, pp.12-19, 2011, 〈10.1557/PROC-1026-C07-03〉. 〈hal-01736057〉
  • Frederic Mazaleyrat, Mehdi Ammar, Martino Lobue, Jean-Pierre Bonnet, Pierre Audebert, et al.. Silica coated nanoparticles: synthesis,magnetic properties and spin structure. ISMANAM, Aug 2007, Corfou, Greece. 483 (1-2), pp.473-478, 2009, 〈10.1016/j.jallcom.2008.08.121〉. 〈hal-00662962〉
  • O. Weber, Y. Bogumilowicz, T. Ernst, J.-M. Hartmann, F. Ducroquet, et al.. Strained Si and Ge MOSFETs with high-K/metal gate stack for high mobility dual channel CMOS. IEEE International Electron Devices Meeting, 2005, Dec 2005, Washington, United States. 2005, pp.137-140, 2005, 〈10.1109/IEDM.2005.1609288〉. 〈hal-01736083〉

Chapitre d'ouvrage3 documents

  • Claude Arnold, Marie-France Beaufort, Loïc Bertrand, Xavier Blase, Christine Boeglin, et al.. Matière condensée : organisation et dynamique. Rapport de conjoncture du comité national de la recherche scientifique : Édition 2014, CNRS Éditions, 2015, 978-2-271-08613-6. 〈hal-01461528〉
  • Martin Hÿtch, Florent Houdellier, Nikolay Cherkashin, Shay Reboh, Elsa Javon, et al.. Dark-Field Electron Holography for Strain Mapping. Alain Claverie; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.81--106, 2013, 〈10.1002/9781118579022.ch4〉. 〈hal-01736026〉
  • Florent Houdellier, Martin Hÿtch, Florian Hüe, Etienne Snoeck. CHAPTER 6 - Aberration Correction With the SACTEM-Toulouse: From Imaging to Diffraction. P.W.Hawkes. Advances in Imaging and Electron Physics vol 153, 153, Academic press, 2008, Aberration-Corrected Electron Microscopy, 978-0-12-374220-9. 〈10.1016/S1076-5670(08)01006-9〉. 〈hal-01742322〉