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Structural and property engineering of 2D titanium carbides (MXene) thin films using ion irradiation

Ayoub Benmoumen , Marie-Laure David , Eric Gautron , Simon Hurand , Sophia Tangui , et al.
Applied Surface Science, 2024, 652, pp.159206. ⟨10.1016/j.apsusc.2023.159206⟩
Article dans une revue hal-04547734v1

Interaction of interstitials with buried amorphous layer in silicon

E. Oliviero , M.-L. David , P. F. P. Fichtner
International Conference on Extended Defects in Semiconductors (EDS 2008), 2008, Poitiers, France. pp.1969-1973, ⟨10.1002/pssc.200881444⟩
Communication dans un congrès in2p3-00683325v1
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Evolution of the properties of helium nanobubbles during in situ annealing probed by spectrum imaging in the transmission electron microscope

K. Alix , M.-L. David , J. Dérès , C. Hébert , Laurent Pizzagalli
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 97 (10), ⟨10.1103/PhysRevB.97.104102⟩
Article dans une revue hal-02114782v1

About the internal pressure in cavities derived from implantation-induced blistering in semi-conductors.

G. Parry , C. Coupeau , E. Dion , M.-L. David , J. Colin , et al.
Journal of Applied Physics, 2011, 110 (11), ⟨10.1063/1.3664741⟩
Article dans une revue hal-00664729v1

Helium implanted gallium nitride evidence of gas-filled rod-shaped cavity formation along the c-axis

J-F. Barbot , F. Pailloux , M.-L. David , Laurent Pizzagalli , E. Oliviero , et al.
Journal of Applied Physics, 2008, 104, pp.043526. ⟨10.1063/1.2970062⟩
Article dans une revue in2p3-00828299v1
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Kinetic evolution of blistering in hydrogen-implanted silicon

C. Coupeau , G. Parry , Jérôme Colin , M.-L. David , J. Labanowski , et al.
Applied Physics Letters, 2013, 103 (3), pp.031908. ⟨10.1063/1.4813858⟩
Article dans une revue hal-00869260v1

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

E. Oliviero , M.-L. David , P. F. P. Fichtner , M.F. Beaufort , J-F. Barbot
Journal of Applied Physics, 2013, 113, pp.083515. ⟨10.1063/1.4793507⟩
Article dans une revue in2p3-00824985v1
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Atomistic simulations of a helium bubble in silicon carbide

Laurent Pizzagalli , M.-L. David
Journal of Nuclear Materials, 2020, 531, pp.151990. ⟨10.1016/j.jnucmat.2020.151990⟩
Article dans une revue hal-02447139v1
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Properties of helium bubbles in covalent systems at the nanoscale: A combined numerical and experimental study

J. Dérès , M.-L. David , K. Alix , C. Hébert , D. T L Alexander , et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2017, 96 (1), ⟨10.1103/PhysRevB.96.014110⟩
Article dans une revue hal-02114780v1

Helium implantation into 4H-SiC

J-F. Barbot , S. Leclerc , M.-L. David , E. Oliviero , R. Montsouka , et al.
physica status solidi (a), 2009, 206, pp.1916-1923. ⟨10.1002/pssa.200881468⟩
Article dans une revue istex in2p3-00716700v1
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Electronic Structure Sensitivity to Surface Disorder and Nanometer-Scale Impurity of 2D Titanium Carbide MXene Sheets as Revealed by Electron Energy-Loss Spectroscopy

T. Bilyk , M. Benchakar , M. Bugnet , L. Loupias , P. Chartier , et al.
Journal of Physical Chemistry C, 2020, 124 (49), pp.27071-27081. ⟨10.1021/acs.jpcc.0c06798⟩
Article dans une revue hal-03103681v1

Investigation of helium interstitials aggregation in silicon: Why bubbles formation by a self-trapping mechanism does not work

Laurent Pizzagalli , M.-L. David , A. Charaf-Eddin
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015, 352, pp.152-155. ⟨10.1016/j.nimb.2014.12.002⟩
Article dans une revue hal-01164544v1
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Physical properties of Co/n-Ge Schottky contacts

L Lajaunie , M.-L. David , J-F. Barbot
Journal of Physics D: Applied Physics, 2011, 44 (12), pp.125103. ⟨10.1088/0022-3727/44/12/125103⟩
Article dans une revue hal-00604885v1