Co-auteurs

Nombre de documents

92

M.E. Gueunier-Farret CV


Article dans une revue32 documents

  • Sofia Gaiaschi, Marie-Estelle Farret-Gueunier, Christophe Longeaud, Eric Johnson. Electrical properties of hydrogenated microcrystalline silicon carbon alloys: effect of deposition parameters and light soaking. Journal of Physics D: Applied Physics, IOP Publishing, 2015, 48, pp.285101. 〈10.1088/0022-3727/48/28/285101〉. 〈hal-01274543〉
  • David Reaux, José Alvarez, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Impact of defect-pool model parameters on the lifetime in c-Si/a-Si:H heterojunction solar cells. Energy Procedia, Elsevier, 2015, 77, pp.153-158. 〈10.1016/j.egypro.2015.07.023〉. 〈hal-01188802〉
  • R. Varache, C. Leendertz, M.E. Gueunier-Farret, J. Haschke, D. Muñoz, et al.. Investigation of selective junctions using a newly developed tunnel current model for solar cell applications. Solar Energy Materials and Solar Cells, Elsevier, 2015, 141, pp.14 - 23. 〈10.1016/j.solmat.2015.05.014〉. 〈hal-01274674〉
  • Jean-Paul Kleider, José Alvarez, Aurore Brézard-Oudot, Marie-Estelle Gueunier-Farret, Olga Maslova. Revisiting the theory and usage of junction capacitance: Application to high efficiency amorphous/crystalline silicon heterojunction solar cells. Solar Energy Materials and Solar Cells, Elsevier, 2015, 135, pp.8-16. 〈10.1016/j.solmat.2014.09.002〉. 〈hal-01206182〉
  • O. Maslova, A. Brézard-Oudot, M.-E. Gueunier-Farret, J. Alvarez, J.-P. Kleider. Explicit analytical modeling of the low frequency a-Si:H/c-Si heterojunction capacitance: Analysis and application to silicon heterojunction solar cells. Journal of Applied Physics, American Institute of Physics, 2015, 118 (11), pp.114507. 〈10.1063/1.4931150〉. 〈hal-01310865〉
  • O. Maslova, A. Brézard-Oudot, M.E. Gueunier-Farret, J. Alvarez, W. Favre, et al.. Temperature and bias dependence of hydrogenated amorphous silicon – crystalline silicon heterojunction capacitance: the link to band bending and band offsets. Canadian Journal of Physics, NRC Research Press, 2014, 92 (7/8), pp.690-695. 〈10.1139/cjp-2013-0544〉. 〈hal-01099596〉
  • S Gaiaschi, R Ruggeri, M-E Gueunier-Farret, E V Johnson. Use of radio frequency power, silicon tetrafluoride and methane as parameters to tune structural properties of hydrogenated microcrystalline silicon carbon alloys. Journal of Physics D: Applied Physics, IOP Publishing, 2014, 47 (45), pp.455102. 〈10.1088/0022-3727/47/45/455102〉. 〈hal-01104321〉
  • Sofia Gaiaschi, Marie-Estelle Gueunier-Farret, Erik V. Johnson. Low temperature hydrogenated microcrystalline silicon-carbon alloys deposited by RF-PECVD. physica status solidi (c), Wiley, 2014, 11 (11-12), pp.1665-1668. 〈10.1002/pssc.201400034〉. 〈hal-01104328〉
  • S. Gaiaschi, R. Ruggeri, E.V. Johnson, P. Bulkin, P. Chapon, et al.. Structural properties of hydrogenated microcrystalline silicon–carbon alloys deposited by Radio Frequency Plasma Enhanced Chemical Vapor Deposition: Effect of microcrystalline silicon seed layer and methane flow rate. Thin Solid Films, Elsevier, 2014, 550, pp.312-318. 〈10.1016/j.tsf.2013.11.081〉. 〈hal-01099597〉
  • Renaud Varache, Jean-Paul Kleider, Marie-Estelle Gueunier-Farret, Lars Korte. Silicon heterojunction solar cells: optimization of emitter and contact properties from analytical calculation and numerical simulation. Materials Science and Engineering: B, Elsevier, 2013, 178 (9), pp.593-598. 〈10.1016/j.mseb.2012.11.011〉. 〈hal-00931269〉
  • Olga Maslova, Aurore Brézard-Oudot, Marie-Estelle Gueunier-Farret, José Alvarez, Wilfried Favre, et al.. Understanding inversion layers and band discontinuities in hydrogenated amorphous silicon/crystalline silicon heterojunctions from the temperature dependence of the capacitance. Applied Physics Letters, American Institute of Physics, 2013, 103 (18), pp.183907 - 183907-4. 〈10.1063/1.4826920〉. 〈hal-00931277〉
  • Irène Ngo, Marie-Estelle Gueunier-Farret, José Alvarez, Jean-Paul Kleider. Modelling on c-Si/a-Si:H wire solar cells: some key parameters to optimize the photovoltaic performance. EPJ Photovoltaics, EDP sciences, 2012, 3, 30102 (6p.). 〈10.1051/epjpv/2012007〉. 〈hal-00778955〉
  • Basia Halliop, Marie-France Salaün, Wilfried Favre, Renaud Varache, Marie-Estelle Gueunier-Farret, et al.. Interface properties of amorphous-crystalline silicon heterojunctions prepared using DC saddle-field PECVD. Journal of Non-Crystalline Solids, Elsevier, 2012, 358 (17), pp.2227-2231. 〈hal-00778948〉
  • Olga Maslova, Marie-Estelle Gueunier-Farret, José Alvarez, A.S. Gudovskikh, E.I Terukov, et al.. Space charge capacitance spectroscopy in amorphous silicon Schottky diodes: Theory, modeling, and experiments. Journal of Non-Crystalline Solids, Elsevier, 2012, 358 (17), pp.2007-2010. 〈10.1016/j.jnoncrysol.2012.01.053〉. 〈hal-00778950〉
  • Djicknoum Diouf, Jean-Paul Kleider, Irène Ngo, Marie-Estelle Gueunier-Farret, José Alvarez. Nanowire solar cells using hydrogenated amorphous silicon: a modeling study. physica status solidi (a), Wiley, 2012, 209 (6), pp.1026-1030. 〈10.1002/pssa.201100756〉. 〈hal-00778953〉
  • Foudil Dadouche, Olivier Bethoux, Marie-Estelle Gueunier-Farret, Erik Johnson, Pere Roca I Cabarrocas, et al.. Geometrical optimization and electrical performance comparison of thin-film tandem structures based on pm-Si:H and µc-Si:H using computer simulation. EPJ Photovoltaics, EDP sciences, 2011, 2, pp.20301. 〈10.1051/pvd/2011001〉. 〈hal-00642129〉
  • José Alvarez, Irène Ngo, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Linwei Yu, et al.. Conductive-probe atomic force microscopy characterization of silicon nanowires. Nanoscale Research Letters, SpringerOpen, 2011, 6, pp.110. 〈10.1186/1556-276X-6-110〉. 〈hal-00710727〉
  • Jean-Paul Kleider, José Alvarez, Martin Labrune, Pere Roca I Cabarrocas, Olga Alexandrovna Maslova, et al.. Characterization of silicon heterojunctions for Solar Cells. Nanoscale Research Letters, SpringerOpen, 2011, 6, pp.152. 〈10.1186/1556-276X-6-152〉. 〈hal-00641696〉
  • Yrebegnan Soro, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Structural and electronic properties of hydrogenated polymorphous silicon films deposited at high rate. Journal of Applied Physics, American Institute of Physics, 2011, 109 (2), 023713 (10 p.). 〈10.1063/1.3536474〉. 〈hal-00710726〉
  • Olga Alexandrovna Maslova, José Alvarez, E.V. Gushina, Wilfried Favre, Marie-Estelle Gueunier-Farret, et al.. Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions. Applied Physics Letters, American Institute of Physics, 2010, 97 (25), pp.252110. 〈hal-00557102〉
  • E.V. Johnson, Foudil Dadouche, Marie-Estelle Farret-Gueunier, Jean-Paul Kleider, Pere Roca I Cabarrocas. Open-circuit voltage increase dynamics in high and low deposition rate polymorphous silicon solar cells. physica status solidi (a), Wiley, 2010, 207 (3), pp.691-694. 〈hal-00555228〉
  • Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Device grade hydrogenated polymorphous silicon deposited at high rates. Journal of Non-Crystalline Solids, Elsevier, 2008, 354, pp.2092. 〈hal-00350767〉
  • Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Polymorphous silicon thin films deposited at high rate: transport properties and density of states. Thin Solid Films, Elsevier, 2008, 516, pp.6888. 〈hal-00350886〉
  • P. Leempoel, P. Descamps, T. Kervyn de Meerendré, J. Charliac, Pere Roca I Cabarrocas, et al.. Distributed Electron Cyclotron Resonance plasma: a technology for large area deposition of device quality a-Si:H at very high rate. Thin Solid Films, Elsevier, 2008, 516, pp.6853. 〈hal-00350890〉
  • T.H. Dao, Marie-Estelle Gueunier-Farret, D. Daineka, P. Bulkin, Pere Roca I Cabarrocas, et al.. Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by ECR. Thin Solid Films, Elsevier, 2007, 515, pp.7650-7653. 〈hal-00322079〉
  • Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, F. Voigt, R. Brüggemann, G.H. Bauer, et al.. Transport properties and defects in silicon nanoparticles and effect of embedding in amorphous silicon layers. Journal of Non-Crystalline Solids, Elsevier, 2006, 352, pp.1101-1104. 〈hal-00321733〉
  • Marie-Estelle Gueunier-Farret, Cyril Bazin, Jean-Paul Kleider, Christophe Longeaud, P. Bulkin, et al.. Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates. Journal of Non-Crystalline Solids, Elsevier, 2006, 352, pp.1913-1916. 〈hal-00321731〉
  • M. Meaudre, Marie-Estelle Gueunier-Farret, R. Meaudre, Jean-Paul Kleider, S. Vignoli, et al.. Deep defects and their electron capture cross sections in polymorphous silicon-germanium thin films. Journal of Applied Physics, American Institute of Physics, 2005, 98, pp.33531. 〈hal-00321252〉
  • Jean-Paul Kleider, Christophe Longeaud, Marie-Estelle Gueunier. The modulated photocurrent technique: a powerful tool to investigate band gap states in silicon based thin films. Phys. stat. sol., 2004, 1, pp.1208-1226. 〈hal-00321029〉
  • R. Brüggemann, S. Brehme, Jean-Paul Kleider, Marie-Estelle Gueunier, W. Bronner. Effects of proton irradiation on the electronic properties of microcrystalline silicon. Journal of Non-Crystalline Solids, Elsevier, 2004, 338-340, pp.477-480. 〈hal-00321028〉
  • Jean-Paul Kleider, Christophe Longeaud, Marie-Estelle Gueunier. Investigation of bandgap states using the modulated photocurrent technique in both low and high frequency regimes. Journal of Non-Crystalline Solids, Elsevier, 2004, 338-340, pp.390-399. 〈hal-00320874〉
  • Marie-Estelle Gueunier, Christophe Longeaud, Jean-Paul Kleider. Modulated photocurrent in the recombination regime. European Physical Journal: Applied Physics, EDP Sciences, 2004, 26, pp.75-85. 〈hal-00320883〉

Communication dans un congrès54 documents

  • Sofia Gaiaschi, E.V. Johnson, Marie-Estelle Gueunier-Farret, Christophe Longeaud, P. Chapon, et al.. Low temperature hydrogenated microcrystalline silicon-carbon alloys deposited by RF-PECVD for photovoltaic application. E-MRS Spring Meeting 2014, May 2014, Lille, France. Proceedings of the E-MRS Spring Meeting 2014. 〈hal-01099573〉
  • Sofia Gaiaschi, Marie-Estelle Gueunier-Farret, Christophe Longeaud, E.V. Johnson, P. Chapon, et al.. Structural and electrical properties of hydrogenated microcrystalline silicon-carbon alloys deposited at low substrate temperature by RF-PECVD. E-MRS Spring Meeting 2014, May 2014, Lille, France. Proceedings of the E-MRS Spring Meeting 2014, 2014. 〈hal-01099579〉
  • M. Xu, Mohamed Boutchich, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, et al.. TEMPERATURE DEPENDENT PHOTOLUMINESCENCE IN SILICON BASED HETEROJUNCTION SOLAR CELL. EU PVSEC 2014, Sep 2014, Amsterdam, Netherlands. Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition, pp.1214-1217, 2014. 〈hal-01099586〉
  • Alexander Korovin, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. 2D Modeling of Homojunction, Heterojunction and Hybrid n-Type Interdigitated Back Contact Silicon Solar Cell. EU PVSEC 2014, Sep 2014, Amsterdam, Netherlands. Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition, pp.1162 - 1165, 2014. 〈hal-01099584〉
  • Jean-Paul Kleider, José Alvarez, Aurore Brézard-Oudot, Marie-Estelle Gueunier-Farret, Olga Maslova. Revisiting the theory and usage of capacitance techniques: application of high efficiency amorphous/crystalline heterojunction solar cells. E-MRS Spring Meeting 2014, May 2014, Lille, France. Proceedings of the E-MRS Spring Meeting 2014, 2014. 〈hal-01099589〉
  • David Réaux, Jean-Paul Kleider, Marie-Estelle Gueunier-Farret. MODELING OF THE SURFACE DEFECT DENSITY IN C-SI/A-SI:H HETEROJUNCTIONS USING THE DEFECT-POOL. EU PVSEC 2014, Sep 2014, Amsterdam, Netherlands. Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition, pp.1158-1161, 2014. 〈hal-01099585〉
  • Ming Xu, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Mohamed Boutchich, et al.. Photoluminescence techniques for heterojunction solar cell characterization. JNPV 2013, Dec 2013, Dourdan, France. 2013. 〈hal-00931327〉
  • Igor P. Sobkowicz, Parsathi Chatterjee, Marie-Estelle Gueunier-Farret, Antoine Salomon, Jean-Paul Kleider, et al.. Coplanar conductance measurements and modeling to characterize surface passivation of c-Si wafers by a-Si:H. EUPVSEC 2013, Sep 2013, Paris, France. pp.1680 - 1685, 2013. 〈hal-00931340〉
  • Sofia Gaiaschi, R. Ruggeri, E.V. Johnson, Pavel Bulkin, Marie-Estelle Gueunier-Farret, et al.. Structural and electrical characterization of microcrystalline silicon-carbon alloys deposited by RF-PECVD. E-MRS Spring Meeting 2013, May 2013, Strasbourg, France. 2013. 〈hal-00931313〉
  • Jean-Paul Kleider, Wilfried Favre, Renaud Varache, Olga Maslova, José Alvarez, et al.. Physical insight on silicon heterojunction solar cells from electrical characterization. n-PV Workshop 2013, Apr 2013, Chambéry, France. 2013. 〈hal-00931320〉
  • Sofia Gaiaschi, Marie-Estelle Gueunier-Farret, Christophe Longeaud, E.V. Johnson, Pavel Bulkin, et al.. RF power influence on structural and electrical properties of µc-Si1-xCx:H. EUPVSEC 2013, Sep 2013, Paris, France. 2013. 〈hal-00931310〉
  • Sofia Gaiaschi, R. Ruggeri, E.V. Johnson, Marie-Estelle Gueunier-Farret, Christophe Longeaud, et al.. Tailored Voltage deposition of µc-Si1-xCx:H from H2 diluted SiH4 and CH4 gas mixtures. ICANS 25, Aug 2013, Toronto, Canada. 2013. 〈hal-00931312〉
  • Olga Maslova, Aurore Brézard-Oudot, Wilfried Favre, D Munoz, Marie-Estelle Gueunier-Farret, et al.. Capacitance spectroscopy of hydrogenated amorphous silicon/crystalline silicon heterojunctions : analytical calculations and experiment. E-MRS 2013 Spring Meeting, May 2013, Strasbourg, France. 2013. 〈hal-00931314〉
  • Olga Maslova, Aurore Brézard-Oudot, Marie-Estelle Gueunier-Farret, José Alvarez, Wilfried Favre, et al.. Temperature and Bias Dependence of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterojunction Capacitance: The Link to Band Bending and Band Offsets. ICANS 25, Aug 2013, Toronto, Canada. 2013. 〈hal-00931318〉
  • Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Christophe Longeaud, Sofia Gaiaschi. Caractérisation des défauts électriquement actifs de semiconducteurs en couches minces par la technique du photocourant modulé. JNPV 2013, Dec 2013, Dourdan, France. 2013. 〈hal-00931321〉
  • Ming Xu, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Mohamed Boutchich, et al.. Photoluminescence techniques for heterojunction solar cell characterization. Journées Junior FédESol 2013, Dec 2013, Dourdan, France. 2013. 〈hal-00931326〉
  • Sofia Gaiaschi, E.V. Johnson, Marie-Estelle Gueunier-Farret, Christophe Longeaud, Pavel Bulkin, et al.. µc-Si1-xCx:H deposited by RF-PECVD: a novel material for PV applications. E-MRS Fall Meeting 2013, Sep 2013, Warsaw, Poland. 2013. 〈hal-00931311〉
  • T. Desrues, Isidro Martin, S. De Vecchi, S. Abolmasov, Djicknoum Diouf, et al.. Silicon Heterojunction for Advanced Rear Contact Cells: Main Results of the SHARCC Project. EUPVSEC 2013, Sep 2013, Paris, France. pp.1135-1138, 2013. 〈hal-00931337〉
  • Wilfried Favre, Renaud Varache, José Alvarez, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Characterization and modeling of heterojunction solar cells. IWTFSSC 4, Mar 2012, Neuchâtel, Switzerland. 2012. 〈hal-00778998〉
  • Renaud Varache, Jean-Paul Kleider, Marie-Estelle Gueunier-Farret, Lars Korte. Cellules photovoltaiques à heterojonction de silicium (c-Si/a-Si:H): modèle analytique et simulation numérique pour une optimisation des propriétés de l'émetteur. JNPV 2012, Dec 2012, Chantilly, France. 2012. 〈hal-00779020〉
  • Renaud Varache, Heike Angermann, Lars Korte, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Controlled interfacial WET-CHEMICAL oxide for amorphous silicon/crystalline silicon heterojunction solar cells. EU PVSEC 2012, Sep 2012, Frankfurt, Germany. 2012. 〈hal-00779007〉
  • Jean-Paul Kleider, Wilfried Favre, Renaud Varache, Olga Maslova, José Alvarez, et al.. Heterojunctions on n-type c-Si: determination of interface parameters from electrical techniques. nPV Workshop 2012, May 2012, Amsterdam, Netherlands. 2012. 〈hal-00779010〉
  • Jean-Paul Kleider, Renaud Varache, Wilfried Favre, Olga Maslova, José Alvarez, et al.. Electrical characterization and modeling of the amorphous/crystalline silicon interface. E-MRS 2012 Spring Meeting, May 2012, Strasbourg, France. 2012. 〈hal-00778999〉
  • Sofia Gaiaschi, E.V. Johnson, Pavel Bulkin, P. Chapon, Marie-Estelle Gueunier-Farret, et al.. Deposition of microcrystalline silicon-carbon alloys by RF-PECVD and MDECR. E-MRS Spring Meeting 2012, May 2012, Strasbourg, France. 2012. 〈hal-00779004〉
  • Renaud Varache, Jean-Paul Kleider, Basia Halliop, Nazir Kherani, Marie-Estelle Gueunier-Farret. Influence of the undoped a-Si:H buffer layer on a-Si:H/c-Si heterojunctions from planar conductance and lifetime measurements. EU PVSEC 2012, Sep 2012, Frankfurt, Germany. 2012. 〈hal-00779006〉
  • Renaud Varache, H. Angermann, Lars Korte, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Couche tampon d'oxyde de silicium pour des cellules à heterojonction de silicium. JNPV 2012, Dec 2012, Chantilly, France. 2012. 〈hal-00779021〉
  • Irène Ngo, Marie-Estelle Gueunier-Farret, José Alvarez, Jean-Paul Kleider. Modeling of c-Si/a-Si:H nanowires based solar cells. 12th Euregional Workshop on Novel Concepts for Future Thin-Film Silicon Solar Cells, Jan 2012, Delft, Netherlands. 〈hal-00779014〉
  • Sofia Gaiaschi, R. Ruggeri, E.V. Johnson, Pavel Bulkin, Marie-Estelle Gueunier-Farret, et al.. Caracterisations structurales et electriques de μc-Si1−xCx :H deposes par RF-PECVD. JNPV 2012, Dec 2012, Chantilly, France. 2012. 〈hal-00781749〉
  • Djicknoum Diouf, Jean-Paul Kleider, Irène Ngo, Marie-Estelle Gueunier-Farret, José Alvarez. Nanowire solar cells using hydrogenated amorphus silicon : a modeling study. Journées Nationales PhotoVoltaïques 2011, Dec 2011, Dourdan, France. 〈hal-00710792〉
  • Djicknoum Diouf, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Optimization of a-Si:H/c-Si heterointerfaces by 2D numerical simulations : influence of intrinsic a-Si:H buffer layer. Journées Nationales Photovoltaïques 2011, Dec 2011, Dourdan, France. 〈hal-00710793〉
  • Irène Ngo, Marie-Estelle Gueunier-Farret, José Alvarez, Jean-Paul Kleider. Modelling of c-Si/a-Si:H nanowire solar cells: some key parameters to optimize the photovoltaic performance. E-MRS Spring Meeting 2011, May 2011, Nice, France. 2011. 〈hal-00710770〉
  • Basia Halliop, Marie-France Salaün, Wilfried Favre, Renaud Varache, Marie-Estelle Gueunier-Farret, et al.. Interface properties of amorphous-crystalline silicon heterojunctions prepared using DC saddle-field PECVD. ICANS24, Aug 2011, Nara, Japan. 2011. 〈hal-00710771〉
  • Olga Maslova, Marie-Estelle Gueunier-Farret, José Alvarez, A.S. Gudovskikh, E.I Terukov, et al.. Space charge capacitance spectroscopy in amorphous silicon Schottky diodes: theory, modeling, and experiments. ICANS24, Aug 2011, Nara, Japan. 2011. 〈hal-00710774〉
  • Morgane Fruzzetti, José Alvarez, Irène Ngo, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, et al.. Conductive-atomic force microscopy and Raman spectroscopy characterization of silicon nanowires. Journées Nationales PhotoVoltaïques 2011, Dec 2011, Dourdan, France. 〈hal-00710790〉
  • Djicknoum Diouf, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Optimization of a-Si:H/c-Si heterointerfaces by 2D numerical simulations: influence of intrinsic a-Si:H buffer layer. E-MRS Spring Meeting 2011, May 2011, Nice, France. 2011. 〈hal-00710766〉
  • Djicknoum Diouf, Jean-Paul Kleider, Irène Ngo, Marie-Estelle Gueunier-Farret, José Alvarez. Nanowire solar cells using hydrogenated amorphous silicon: a modeling study. E-MRS Fall Meeting 2011, Sep 2011, Varsovie, Poland. 2011. 〈hal-00710777〉
  • José Alvarez, Irène Ngo, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Lianbo Yu, et al.. Conductive-atomic force microscopy characterization of silicon nanowires. E-MRS 2010 Fall Meeting, Sep 2010, Varsovie, Poland. 2010. 〈hal-00555251〉
  • José Alvarez, Irène Ngo, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Simon Perraud. Electrical characterization of phosphorus doped silicon nanowires. MRS Spring Meeting, Apr 2010, San Francisco, United States. 2010. 〈hal-00555247〉
  • Jean-Paul Kleider, José Alvarez, A.V. Ankudinov, A.S. Gudovskikh, E.V. Gushina, et al.. Characterization of silicon heterojunctions for solar cells. E-MRS 2010 Fall Meeting, 2010, Varsovie, Poland. 2010. 〈hal-00555254〉
  • Irène Ngo, B. O\'Donnell, José Alvarez, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, et al.. Catalyst formation and growth of Sn- and In-catalyzed silicon nanowires. MRS Spring Meeting, Apr 2010, San Francisco, United States. 2010. 〈hal-00555252〉
  • Foudil Dadouche, Olivier Bethoux, Marie-Estelle Farret-Gueunier, E.V. Johnson, Pere Roca I Cabarrocas, et al.. Comparative study of thin-film silicon cell tandem structures pm-Si:H/µc-Si:H in system association prospect. European Materials Research Society – EMRS Spring Meeting, 2009, Strasbourg, France. pp.CD-Rom Proceedings, 2009. 〈hal-00446008〉
  • E.V. Johnson, Foudil Dadouche, Marie-Estelle Farret-Gueunier, Jean-Paul Kleider, Pere Roca I Cabarrocas. Open-circuit voltage increase dynamics in high and low deposition rate polymorphous silicon solar cells. 23rd International Conference on Amorphous and Nanocrystalline Semiconductors - ICANS23, 2009, Utrecht, Netherlands. 2009. 〈hal-00446010〉
  • E.V. Johnson, A. Abramov, K.H. Kim, Yrebegnan Soro, Marie-Estelle Farret-Gueunier, et al.. Hydrogenated polymorphous silicon at high deposition rate : serious alternative for cost-effective modules. 18th International Photovoltaic Science and Engineering Conference and Exhibition, 2009, Kolkata, India. 2009. 〈hal-00446006〉
  • Rémy Chouffot, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, C. Baur, A. De Luca, et al.. Characterization and modelling of the dynamical electrical behaviour of triple junction solar cells. 23rd European Photovoltaic Solar Energy Conference and Exhibition, Sep 2008, Valencia, Spain. pp.CD-ROM Proceedings, 2008. 〈hal-00351239〉
  • Yrebegnan Moussa Soro, Marie-Estelle Gueunier-Farret, Christophe Longeaud, Jean-Paul Kleider. Device grade hydrogenated polymorphous silicon deposited at high rates. Journées annuelles de la SF2M 2008, Jun 2008, Paris, France. pp.CD-ROM, 2008. 〈hal-00351235〉
  • P. Leempoel, P. Descamps, T. Kervyn de Meerenedre, J. Charliac, Pere Roca I Cabarrocas, et al.. Distributed Electron Cyclotron Resonance plasma: a technology for large area deposition of device quality a-Si:H at very high rate. E-MRS 2007 Spring Meeting, 2007, France. 〈hal-00322305〉
  • Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Device grade hydrogenated polymorphous silicon deposited at high rates. 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, 2007, United States. 〈hal-00322281〉
  • Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Polymorphous silicon thin films deposited at high rate: transport properties and density of states. E-MRS 2007 Spring Meeting, 2007, France. 〈hal-00322303〉
  • T.H. Dao, Marie-Estelle Gueunier-Farret, D. Daineka, P. Bulkin, Pere Roca I Cabarrocas, et al.. Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonance. E-MRS 2006 Spring Meeting, 2006, France. 〈hal-00321911〉
  • Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, F. Voigt, R. Brüggemann, G.H. Bauer, et al.. Transport properties and defects in silicon nanoparticles and effect of embedding in amorphous silicon layers. 21st International Conference on Amorphous and Nanocrystalline Semiconductors, 2005, Portugal. 〈hal-00321697〉
  • Marie-Estelle Gueunier-Farret, Cyril Bazin, Jean-Paul Kleider, Christophe Longeaud, P. Bulkin, et al.. Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates. 21st International Conference on Amorphous and Nanocrystalline Semiconductors, 2005, Portugal. 〈hal-00321694〉
  • Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Christophe Longeaud. The modulated photocurrent technique: comparison of the high and low frequency regimes for the characterisation of bandgap states in thin films semiconductors. a-SiNet Workshop, 2005, Netherlands. 〈hal-00321563〉
  • Jean-Paul Kleider, Christophe Longeaud, Marie-Estelle Gueunier. Determination of bandgap states characteristics using the modulated photocurrent technique in both low and high frequency regimes. 4th AMS (international conference on Amorphous and Microcrystalline Semiconductors), 2004, Russia. 〈hal-00321032〉
  • Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Christophe Longeaud. Technique du photocourant modulé pour la caractérisation des états localisés dans la bande interdite des semiconducteurs en couches minces. Séminaire RDT photovoltaïque CNRS-ADEME, Matériaux et procédés pour la conversion photovoltaïque de l'énergie solaire, 2004, France. 2004. 〈hal-00321088〉

Poster6 documents

  • N. Puspitosari, S. Gaiaschi, C. Longeaud, M. E. Gueunier, E. V. Johnson. Density of states measurements of RF-power, SiF4 and CH4 –tuned-hydrogenated microcrystalline silicon carbon alloy thin films using Fourier transform photocurrent spectroscopy (FTPS). European Photovoltaïc Solar Energy Conference, Sep 2015, Hambourg, Germany. Proceedings of the European Photovoltaïc Solar Energy Conference. 〈hal-01242764〉
  • David Reaux, José Alvarez, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Modélisation de la densité de défauts de surface des heterojunctions c-Si/a-Si:H en utilisant le modèle du Defect-Pool. Journées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France. 〈hal-01238539〉
  • N. Puspitosari, S. Gaiaschi, C. Longeaud, M.E. Gueunier, E. V. Johnson. Density of states measurements of RF-power, SiF4 and CH4 –tuned-hydrogenated microcrystalline silicon carbon alloy thin films using Fourier transform photocurrent spectroscopy (FTPS). Journées Nationales du Photovoltaïque 2015, Dec 2015, Dourdan, France. 〈hal-01245742〉
  • David Reaux, J Alvarez, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Impact of defect-pool model parameters on the lifetime in c-Si/a-Si:H heterojunction solar cells. 5th International Conference on Silicon Photovoltaics, Silicon PV, Mar 2015, Konstanz, Germany. 〈hal-01232099〉
  • David Réaux, Jean-Paul Kleider, Marie-Estelle Gueunier-Farret. Modeling of the surface defects density in c-Si/a-Si:H heterojunction using the Defect-Pool Model. JNPV 2014, Dec 2014, Dourdan, France. Actes des Journées Nationales du PhotoVoltaïque. 〈hal-01099351〉
  • M. Xu, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Mohamed Boutchich, et al.. Photoluminescence techniques for heterojunction solar cell characterization. JNPV 2014, Dec 2014, Dourdan, France. Actes des Journées Nationales du PhotoVoltaïque. 〈hal-01099349〉