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Proximity effect in planar TiN-Silicon junctions

 D. Quirion , F. Lefloch , M. Sanquer
Journal of Low Temperature Physics, 2000, 120, pp.361-380
Article dans une revue hal-00136036v1

Patterning Strategy for Monoelectronic Device Platform in a Complementary Metal Oxide Semiconductor Technology

 S. Pauliac-Vaujour , R. Wacquez , C. Vizioz , T. Chevolleau , M. Pierre , et al.
Japanese Journal of Applied Physics, 2011, 50 (6), pp.06GF15-06GF15-5. ⟨10.1143/JJAP.50.06GF15⟩
Article dans une revue hal-00647505v1

Radio Frequency Reflectometry of Single-Electron Box Arrays for Nanoscale Voltage Sensing Applications

 Thomas Zirkle , Matthew Filmer , Jonathan Chisum , Alexei Orlov , Eva Dupont-Ferrier , et al.
Applied Sciences, 2020, 10 (24), pp.8797. ⟨10.3390/app10248797⟩
Article dans une revue hal-03749559v1

Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector

 Matias Imanol Urdampilleta , L. Hutin , B. Jadot , B. Bertrand , H. Bohuslavskyi , et al.
2017 Symposium on VLSI Technology, Jun 2017, Kyoto, Japan. ⟨10.23919/VLSIT.2017.7998163⟩
Communication dans un congrès hal-02018160v1

Coherent Coupling of Two Dopants in a Silicon Nanowire Probed by Landau-Zener-Stückelberg Interferometry

 E. Dupont-Ferrier , B. Roche , B. Voisin , X. Jehl , R. Wacquez , et al.
Physical Review Letters, 2013, 110 (13)
Article dans une revue hal-02009831v1

350K operating silicon nanowire single electron/hole transistors scaled down to 3.4nm diameter and 10nm gate length

 R. Lavieville , S. Barraud , A. Corna , X. Jehl , M. Sanquer , et al.
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, France. pp.9-12
Communication dans un congrès hal-02018072v1

Dopant-controlled single-electron pumping through a metallic island

 Tobias Wenz , Frank Hohls , Xavier Jehl , M. Sanquer , Sylvain Barraud , et al.
Applied Physics Letters, 2016, 108 (21), pp.213107
Article dans une revue hal-02009379v1

Dual-port reflectometry technique: Charge identification in nanoscaled single-electron transistors

 Alexei O. Orlov , P. Fay , G. Snider , Xavier Jehl , Sylvain Barraud , et al.
IEEE Nanotechnology Magazine, 2015, 9 (2), pp.24-32. ⟨10.1109/mnano.2015.2409411⟩
Article dans une revue cea-01734601v1

Design and Operation of CMOS-Compatible Electron Pumps Fabricated With Optical Lithography

 P. Clapera , J. Klochan , R. Lavieville , S. Barraud , L. Hutin , et al.
IEEE Electron Device Letters, 2017, 38 (4), pp.414-417
Article dans une revue hal-02017921v1
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Thermoelectric Scanning-Gate Interferometry on a Quantum Point Contact

 B. Brun , F. Martins , S. Faniel , A. Cavanna , C. Ulysse , et al.
Physical Review Applied, 2019, 11 (3), pp.034069. ⟨10.1103/PhysRevApplied.11.034069⟩
Article dans une revue hal-02083926v1

Cryogenic operation of SOI electron pumps and ring oscillators

 P. Clapera , X. Jehl , L. Hutin , S. Barraud , A. Valentian , et al.
2016 IEEE Silicon Nanoelectronics Workshop (SNW), Jun 2016, Honolulu, France. pp.182-185
Communication dans un congrès hal-02018085v1
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Electron phase shift at the zero-bias anomaly of quantum point contacts

 Boris Brun , Frederico Martins , Sebastien Faniel , Benoit Hackens , Antonella Cavanna , et al.
Physical Review Letters, 2016, 116 (13), pp.136801. ⟨10.1103/PhysRevLett.116.136801⟩
Article dans une revue hal-01294955v1

Quantum interferences and charge effects in amorphous alloys near the metal-insulator transition

 P. Hernandez , F. Ladieu , M. Sanquer , D. Mailly
Physica B: Condensed Matter, 1994, 194-196, Part 1, pp.1141 - 1142. ⟨10.1016/0921-4526(94)90900-8⟩
Article dans une revue istex hal-01397090v1

Quantum Interferences in Disordered Mesoscopic Insulators.

 F Ladieu , M. Sanquer
Quantum Dynamics of Submicron Structures, 1994, ⟨10.1007/978-94-011-0019-9_5⟩
Chapitre d'ouvrage istex hal-01397105v1
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Control of single spin in CMOS devices and its application for quantum bits.

 Romain Maurand , Dharam Kotekar-Patil , Andrea Corna , Heorhii Bohuslavskyi , Alessandro Crippa , et al.
Simon Deleonibus. Emerging Devices for Low-Power and High-Performance Nanosystems: Physics, Novel Functions, and Data Processing, 3, Taylor & Francis, pp.201-230, 2018, Pan Stanford Series on Intelligent Nanosystems, 9789814800112
Chapitre d'ouvrage hal-02024444v1

Collective energy gap of preformed Cooper pairs in disordered superconductors

 Thomas Dubouchet , Benjamin Sacépé , Johanna Seidemann , Dan Shahar , M. Sanquer , et al.
Nature Physics, 2019, 15 (3), pp.233-236. ⟨10.1038/s41567-018-0365-8⟩
Article dans une revue hal-02046088v1

Pauli spin blockade in CMOS double quantum dot devices

 D. Kotekar-Patil , A. Corna , R. Maurand , A. Crippa , A. Orlov , et al.
physica status solidi (b), 2017, 254 (3), pp.1600581
Article dans une revue hal-02005908v1

Low-power transimpedance amplifier for cryogenic integration with quantum devices

 L. Le Guevel , G. Billiot , B. Cardoso Paz , M. Tagliaferri , S. de Franceschi , et al.
Applied Physics Reviews, 2020, 7 (4), pp.041407. ⟨10.1063/5.0007119⟩
Article dans une revue hal-03047484v1
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Wigner and Kondo physics in quantum point contacts revealed by scanning gate microscopy

 Boris Brun , Frederico Martins , Sebastien Faniel , Benoit Hackens , Guillaume Bachelier , et al.
Nature Communications, 2014, 5, pp.4290. ⟨10.1038/ncomms5290⟩
Article dans une revue hal-01015395v1

Design and Cryogenic Operation of a Hybrid Quantum-CMOS Circuit

 Paul Clapera , Soumaya Ray , Xavier Jehl , M. Sanquer , A. Valentian , et al.
Physical Review Applied, 2015, 4 (4), pp.044009. ⟨10.1103/PhysRevApplied.4.044009⟩
Article dans une revue hal-01588270v1
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Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

 H. Bohuslavskyi , S. Barraud , V. Barral , M. Cassé , L. Le Guevel , et al.
IEEE Transactions on Electron Devices, 2018, 65 (9), pp.3682 - 3688. ⟨10.1109/TED.2018.2859636⟩
Article dans une revue hal-01887151v1

Development of a CMOS Route for Electron Pumps to Be Used in Quantum Metrology

 Sylvain Barraud , Romain Lavieville , Louis Hutin , Heorhii Bohuslavskyi , Maud Vinet , et al.
Technologies , 2016, 4 (1), pp.10
Article dans une revue hal-02017930v1

Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

 Heorhii Bohuslavskyi , Dharmraj Kotekar-Patil , Romain Maurand , Andrea Corna , Sylvain Barraud , et al.
Applied Physics Letters, 2016, 109 (19), pp.193101. ⟨10.1063/1.4966946⟩
Article dans une revue cea-01849344v1

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

 A. Betz , M. Tagliaferri , M. Vinet , M. Broström , M. Sanquer , et al.
Applied Physics Letters, 2016, 108 (20), pp.203108
Article dans une revue hal-02005959v1
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Magnetopolarizability at the Metal-Insulator Transition

 Michael Specht , Laurent P. Lévy , F. Ladieu , M. Sanquer
Physical Review Letters, 1995, 75 (21), pp.3902 - 3905. ⟨10.1103/PhysRevLett.75.3902⟩
Article dans une revue cea-01396483v1

Low-power transimpedance amplifier for cryogenic integration with quantum devices

 L. Le Guevel , G. Billiot , B. Cardoso Paz , M. Tagliaferri , S. de Franceschi , et al.
Applied Physics Reviews, 2020, 7 (4), pp.041407. ⟨10.1063/5.0007119⟩
Article dans une revue hal-03541763v1

Si CMOS platform for quantum information processing

 L. Hutin , R. Maurand , D. Kotekar-Patil , A. Corna , H. Bohuslavskyi , et al.
2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, France. pp.1-2
Communication dans un congrès hal-02018078v1

Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry

 Alessandro Crippa , Romain Maurand , Dharmraj Kotekar-Patil , Andrea Corna , Heorhii Bohuslavskyi , et al.
Nano Letters, 2017, 17 (2), pp.1001-1006
Article dans une revue hal-02005819v1

Detection of the first charged states in ultrasmall Si single-hole transistor using dual-channel radio frequency reflectometry

 Alexei Orlov , Patrick Fay , Gregory Snider , Xavier Jehl , Sylvain Barraud , et al.
2014 72nd Annual Device Research Conference (DRC), Jun 2014, Santa Barbara, France. pp.83-84
Communication dans un congrès hal-02018063v1

Single donor electronics and quantum functionalities with advanced CMOS technology

 Xavier Jehl , Yann-Michel Niquet , M. Sanquer
Journal of Physics: Condensed Matter, 2016, 28 (10), pp.103001. ⟨10.1088/0953-8984/28/10/103001⟩
Article dans une revue cea-01849846v1
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