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Response of electrically active defects in P/sup +/N junctions when applying a magnetic field

 M. Abdelaoui , M. Lamine , M. Idrissi-Benzohra , M. Benzohra , M. Ketata , et al.
International Conference on Microelectronics, Dec 2002, Beirut, Lebanon. pp.83-86
Communication dans un congrès hal-02138925v1

Magnetic susceptibility of P/sup +/N preamorphized junctions under a dc magnetic field

 M. Abdelaoui , M. Idrissi-Benzohra , M. Benzhora , F. Olivie
Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004., Dec 2004, Tunis, Tunisia. pp.266-269
Communication dans un congrès hal-02138941v1

Reliable Measurements of Defect Profiles in Low-Energy Boron Implanted Silicon

 Halima Benchenane-Mehor , Malika Idrissi-Benzohra , Mohamed Benzohra , François Olivié
Japanese Journal of Applied Physics, 2004, 43 (11A), pp.7572-7575. ⟨10.1143/JJAP.43.7572⟩
Article dans une revue hal-02138244v1

Effect of a magnetic field on the conduction mechanism in Silicon P+N junctions

 M. Idrissi-Benzohra , M. Abdelaoui , M. Benzohra
Microelectronics Journal, 2006, 37 (2), pp.127-132. ⟨10.1016/j.mejo.2005.04.053⟩
Article dans une revue istex hal-02138005v1

Thermionic emission obtained by thermal annealing in vertical polysilicon-monosilicon junctions

 Malika Idrissi , Mohammed Benzohra
Thin Solid Films, 1997, 292 (1-2), pp.260-263. ⟨10.1016/S0040-6090(96)08942-0⟩
Article dans une revue istex hal-02138037v1

Thermal behaviour of 6H–SiC bipolar transistors: spice simulation and applications

 D. Chalabi , M. Idrissi-Benzohra , A. Saidane , M. Benzohra , M. Ketata
Microelectronics Journal, 2004, 35 (5), pp.437-442. ⟨10.1016/j.mejo.2004.01.004⟩
Article dans une revue istex hal-02138053v1

ELECTRONIC SCATTERING IN AN N-TYPE SEMICONDUCTOR UNDER A DC MAGNETIC FIELD

 M. Abdelaoui , Malika Idrissi , Mohamed Benzohra
African Review of Science, Technology and Development, 2016, 1 (2), pp.18-27
Article dans une revue hal-02443665v1

Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects

 M. Ihaddadene , J. Marcon , M. Idrissi-Benzohra , K. Ketata , S. Demichel , et al.
Computational Materials Science, 2002, 24 (1-2), pp.257-261. ⟨10.1016/S0927-0256(02)00193-3⟩
Article dans une revue istex hal-02138095v1

Electrical characterization and modelling of high energy pre-amorphized P+N silicon junctions

 M. Abdelaoui , M. Idrissi-Benzohra , M. Lamine , M. Benzohra
Microelectronics Journal, 2003, 34 (10), pp.955-959. ⟨10.1016/S0026-2692(03)00154-X⟩
Article dans une revue istex hal-02138027v1

Electrical characterizations of preamorphized junctions under LF magnetic field

 M. Abdelaoui , M. Idrissi-Benzohra , H. Mehor , M. Benzohra , F. Olivié
Microelectronics Journal, 2003, 34 (11), pp.1059-1066. ⟨10.1016/j.mejo.2003.09.008⟩
Article dans une revue istex hal-02137989v1

Thermal behavior Spice study of 6H-SiC NMOS transistors

 D. Chalabi , A. Saidane , M. Idrissi-Benzohra , M. Benzohra
Microelectronics Journal, 2009, 40 (6), pp.891-896. ⟨10.1016/j.mejo.2008.12.004⟩
Article dans une revue hal-02137951v1

Influence of processing parameters on electrical properties of polysilicon/ monosilicon junctions

 Malika Idrissi-Benzohra , Mohamed Akani , Mohammed Benzohra
International Journal of Electronics, 1996, 80 (6), pp.727-737. ⟨10.1080/002072196137002⟩
Article dans une revue hal-02138257v1

Magnetic susceptibility of P+N junctions in correlation with the nature of silicon substrate: crystalline or pre-amorphised

 M. Abdelaoui , M. Idrissi-Benzohra , E. Joubert , M. Benzohra , F. Olivié , et al.
Materials Science and Engineering: B, 2003, 102 (1-3), pp.370-375. ⟨10.1016/S0921-5107(02)00623-2⟩
Article dans une revue istex hal-02138087v1
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