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	FTIR and AFM studies of the Ge on Porous Silicon/Si substrate hetero-structure obtained by molecular beam epitaxy S. Gouder , R. Mahamdi , Mansour Aouassa , S. Escoubas , Luc Favre Journal of New Technology and Materials, 2014, 4 (1), pp.112--115 Article dans une revue hal-01811404v1
	Investigation of microstructure and morphology for the Ge on porous silicon/Si substrate hetero-structure obtained by molecular beam epitaxy S. Gouder , R. Mahamdi , Mansour Aouassa , S. Escoubas , Luc Favre Thin Solid Films, 2014, 550, pp.233--238. ⟨10.1016/j.tsf.2013.10.183⟩ Article dans une revue hal-01811407v1
	Accommodation of SiGe strain on a universally compliant porous silicon substrate Isabelle Berbezier , Jean-Noël Aqua , Mansour Aouassa , Luc Favre , Stephanie Escoubas Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 90 (3), pp.035315. ⟨10.1103/PhysRevB.90.035315⟩ Article dans une revue hal-01238952v1
	Ultra-thin planar fully relaxed Ge pseudo-substrate on compliant porous silicon template layer Mansour Aouassa , S. Escoubas , A. Ronda , Luc Favre , S. Gouder Applied Physics Letters, 2012, 101 (23), pp.233105--233105--5. ⟨10.1063/1.4769040⟩ Article dans une revue hal-01811415v1

	TEM and XRD characterizations of epitaxial silicon layer fabricated on double layer porous silicon Soraya Gouder , Larbi Tebessi , Radane Mahamdi , Stéphanie Escoubas , Luc Favre Materials Research Forum, 2016, Rabat, Morocco. pp.249--252, ⟨10.21741/9781945291197-62⟩ Communication dans un congrès hal-01811398v1

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