Laurent PEDESSEAU

Education: ========== **2019:** Habilitation Degree in Physics, Université Rennes (France) **2004:** Ph.D in Physics, Université Paul Sabatier at Toulouse (France); Advisor: Prof. David Mainprice About: ====== Dr Pedesseau is an Associate Professor at the INSA Rennes (FOTON Institute - CNRS) whose work is aimed at the understanding of physical processes in the III-V semiconductor nanostructures for silicon photonics, the hybrid perovskites and novel materials for photovoltaics, and optoelectronic device simulations for optical-communications. His recent scientific interests include: 1) polar surface and interface energies of semiconductors; 2) first principles simulation (including the spin-orbit effect) of mechanical stability, electronic, and optical properties of 3D and 2D semiconductors; 3) electronic structure theory beyond the DFT such as hybrid functionals (HSE), many-body corrections GW, and DFT-1/2; 4) HPC technology for exotic and highly demanding simulations in terms of the large memory footprint and extensive CPUs communications (thousands). Employment: ============== **2011-present:** Associate Professor, Physics Department, INSA of Rennes, France **2008-2011:** Postdoctoral fellow, ICG and LCC, University of Montpellier, France **2006-2008:** Postdoctoral fellow, Physics Department, INSA of Rennes, France **2004-2006:** Postdoctoral fellow, Chemistry department, University College London, London, UK **2001-2004:** Ph.D. fellow, University Paul Sabatier, Toulouse, France Research interests: ====================== Material science, Semiconductor physics, Quantum nanostructures, Solar Energy, Advanced Materials Theoretical physics, Phase transitions, Dielectric and piezoelectric properties Density functional theory, k.p method, Finite element method Administrative responsibilities: =================================== **- Since 2016:** Leader of workgroup 1 (Nanostructure) for the COST Action MP1406 - MultiscaleSolar **- Since 2016:** In charge of International Affairs for the Materials science dept. at the INSA Rennes. Selected publications: ========================= \- Structural and thermodynamic limits of layer thickness in 2D halide perovskites. ***PNAS***, 116, 58, **2019** \- Concept of Lattice mismatch an emergence of surface states in 2D hybrid perovskite QW. ***Nano Lett.***, 18, 9, **2018** \- Universal description of III-V/Si epitaxial growth processes. ***Phys. Rev. Materials***, 2, 060401(R), **2018** \- A stress-free and textured GaP template on Si for sol. wat. split.. ***Ad. Funct. Mat.***, 28, 1801585, **2018** \- Scaling law for excitons in 2D perovskite quantum wells. ***Nat. Com.***, 9, 2254, **2018** \- Anharmonicity and Disorder in the Black Phases of etc. ***ACS Nano***, 12, 3477, **2018** \- Composite Nature of Layered Hybrid Perovskites: etc. ***ACS Nano***, 12, 3321, **2018** \- Hybrid Dion–Jacobson 2D Lead Iodide Perovskites. ***JACS***, 140, 3775, **2018** \- Decreasing the electronic confinement in layered perovskites through intercalation. ***Chem. Sci.***, **2017** \- Extremely efficient internal exciton dissociation through edge states in 2D HOP. ***Science***, 355, **2017** \- Advances and Promises of Layered Halide Hybrid Perovskite Semiconductors. ***ACS Nano***, 10, **2016** \- Rashba and Dresselhaus Effects in HOP: From Basics to Devices. ***ACS Nano***, 9, 11557, **2015** \- First-principles study of a NBS glass-former. I &II. ***Phys. Rev. B*** 91, 134201 & 134202, **2015** \- Analysis of Multivalley and Multibandgap Absorption etc. ***J. Phys. Chem. C*** 118, 11566, **2014** \- DFT and k·p modelling of the phase transitions of lead HOP etc. ***RRL*** 8, 31, **2014** \- Importance of soc in hop for photovoltaic applications. ***J. Phys. Chem. Lett.*** 4, 2999, **2013** \- Electronic model for self-assembled hybrid perovskite etc. ***Phys. Rev. B*** 86, 205301, **2012**