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Laurent PEDESSEAU
9
Documents
Identifiants chercheurs
- laurent-pedesseau
- 0000-0001-9414-8644
- IdRef : 069404003
Présentation
Education:
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**2019:** Habilitation Degree in Physics, Université Rennes (France)
**2004:** Ph.D in Physics, Université Paul Sabatier at Toulouse (France); Advisor: Prof. David Mainprice
About:
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Dr Pedesseau is an Associate Professor at the INSA Rennes (FOTON Institute - CNRS) whose work is aimed at the understanding of physical processes in the III-V semiconductor nanostructures for silicon photonics, the hybrid perovskites and novel materials for photovoltaics, and optoelectronic device simulations for optical-communications. His recent scientific interests include: 1) polar surface and interface energies of semiconductors; 2) first principles simulation (including the spin-orbit effect) of mechanical stability, electronic, and optical properties of 3D and 2D semiconductors; 3) electronic structure theory beyond the DFT such as hybrid functionals (HSE), many-body corrections GW, and DFT-1/2; 4) HPC technology for exotic and highly demanding simulations in terms of the large memory footprint and extensive CPUs communications (thousands).
Employment:
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**2011-present:** Associate Professor, Physics Department, INSA of Rennes, France
**2008-2011:** Postdoctoral fellow, ICG and LCC, University of Montpellier, France
**2006-2008:** Postdoctoral fellow, Physics Department, INSA of Rennes, France
**2004-2006:** Postdoctoral fellow, Chemistry department, University College London, London, UK
**2001-2004:** Ph.D. fellow, University Paul Sabatier, Toulouse, France
Research interests:
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Material science, Semiconductor physics, Quantum nanostructures, Solar Energy, Advanced Materials
Theoretical physics, Phase transitions, Dielectric and piezoelectric properties
Density functional theory, k.p method, Finite element method
Administrative responsibilities:
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**- Since 2016:** Leader of workgroup 1 (Nanostructure) for the COST Action MP1406 - MultiscaleSolar
**- Since 2016:** In charge of International Affairs for the Materials science dept. at the INSA Rennes.
Selected publications:
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\- Structural and thermodynamic limits of layer thickness in 2D halide perovskites. ***PNAS***, 116, 58, **2019**
\- Concept of Lattice mismatch an emergence of surface states in 2D hybrid perovskite QW. ***Nano Lett.***, 18, 9, **2018**
\- Universal description of III-V/Si epitaxial growth processes. ***Phys. Rev. Materials***, 2, 060401(R), **2018**
\- A stress-free and textured GaP template on Si for sol. wat. split.. ***Ad. Funct. Mat.***, 28, 1801585, **2018**
\- Scaling law for excitons in 2D perovskite quantum wells. ***Nat. Com.***, 9, 2254, **2018**
\- Anharmonicity and Disorder in the Black Phases of etc. ***ACS Nano***, 12, 3477, **2018**
\- Composite Nature of Layered Hybrid Perovskites: etc. ***ACS Nano***, 12, 3321, **2018**
\- Hybrid Dion–Jacobson 2D Lead Iodide Perovskites. ***JACS***, 140, 3775, **2018**
\- Decreasing the electronic confinement in layered perovskites through intercalation. ***Chem. Sci.***, **2017**
\- Extremely efficient internal exciton dissociation through edge states in 2D HOP. ***Science***, 355, **2017**
\- Advances and Promises of Layered Halide Hybrid Perovskite Semiconductors. ***ACS Nano***, 10, **2016**
\- Rashba and Dresselhaus Effects in HOP: From Basics to Devices. ***ACS Nano***, 9, 11557, **2015**
\- First-principles study of a NBS glass-former. I &II. ***Phys. Rev. B*** 91, 134201 & 134202, **2015**
\- Analysis of Multivalley and Multibandgap Absorption etc. ***J. Phys. Chem. C*** 118, 11566, **2014**
\- DFT and k·p modelling of the phase transitions of lead HOP etc. ***RRL*** 8, 31, **2014**
\- Importance of soc in hop for photovoltaic applications. ***J. Phys. Chem. Lett.*** 4, 2999, **2013**
\- Electronic model for self-assembled hybrid perovskite etc. ***Phys. Rev. B*** 86, 205301, **2012**
Publications
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Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cellsJournal of Applied Physics, 2013, 113 (12), pp.123509. ⟨10.1063/1.4798363⟩
Article dans une revue
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Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applicationsProceedings of SPIE, the International Society for Optical Engineering, 2013, Quantum sensing and nanophotonic devices X, 8631, pp.863126. ⟨10.1117/12.2012670⟩
Article dans une revue
hal-00842763v1
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Electroluminescence of InGaAs/GaP quantum dots and band engineering of AlGaP/GaP laser injection layersCompound Semiconductor Week 2015 (CSW 2015), Jun 2015, Santa-Barbara, United States
Communication dans un congrès
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Structural, electronic properties and carrier dynamics in InGaAs(N)/GaP quantum dots18th European Molecular Beam Epitaxy Workshop (Euro-MBE 2015), Mar 2015, Canazei, Italy
Communication dans un congrès
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Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩
Communication dans un congrès
hal-01114877v1
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Theoretical and experimental study of (In,Ga)As/GaP quantum dotsInternational Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), Jul 2012, Dresden, Germany. pp.643, ⟨10.1186/1556-276X-7-643⟩
Communication dans un congrès
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Analysis of carriers dynamics and laser emission in 1.55 μm InAs/InP(113)B quantum dot lasersSPIE Photonics Europe 2010, Apr 2010, Bruxelles, Belgium. pp.77202F, ⟨10.1117/12.863580⟩
Communication dans un congrès
hal-00492346v1
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Electroluminescence de boites quantiques InGaAs/GaP et ingénérie de bande des couches d’injection laser AlGaP/GaPOptique Bretagne 2015 - 35ème Journées Nationales d'Optique Guidée (JNOG'35), Jul 2015, Rennes, France
Poster de conférence
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Carrier capture and relaxation in GaAsPN/GaP quantum wells32nd International Conference on the Physics of Semiconductors (ICPS 2014), Aug 2014, Austin, United States. 2014
Poster de conférence
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