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Laurent PEDESSEAU
68
Documents
Identifiants chercheurs
- laurent-pedesseau
- 0000-0001-9414-8644
- IdRef : 069404003
Présentation
Education:
==========
**2019:** Habilitation Degree in Physics, Université Rennes (France)
**2004:** Ph.D in Physics, Université Paul Sabatier at Toulouse (France); Advisor: Prof. David Mainprice
About:
======
Dr Pedesseau is an Associate Professor at the INSA Rennes (FOTON Institute - CNRS) whose work is aimed at the understanding of physical processes in the III-V semiconductor nanostructures for silicon photonics, the hybrid perovskites and novel materials for photovoltaics, and optoelectronic device simulations for optical-communications. His recent scientific interests include: 1) polar surface and interface energies of semiconductors; 2) first principles simulation (including the spin-orbit effect) of mechanical stability, electronic, and optical properties of 3D and 2D semiconductors; 3) electronic structure theory beyond the DFT such as hybrid functionals (HSE), many-body corrections GW, and DFT-1/2; 4) HPC technology for exotic and highly demanding simulations in terms of the large memory footprint and extensive CPUs communications (thousands).
Employment:
==============
**2011-present:** Associate Professor, Physics Department, INSA of Rennes, France
**2008-2011:** Postdoctoral fellow, ICG and LCC, University of Montpellier, France
**2006-2008:** Postdoctoral fellow, Physics Department, INSA of Rennes, France
**2004-2006:** Postdoctoral fellow, Chemistry department, University College London, London, UK
**2001-2004:** Ph.D. fellow, University Paul Sabatier, Toulouse, France
Research interests:
======================
Material science, Semiconductor physics, Quantum nanostructures, Solar Energy, Advanced Materials
Theoretical physics, Phase transitions, Dielectric and piezoelectric properties
Density functional theory, k.p method, Finite element method
Administrative responsibilities:
===================================
**- Since 2016:** Leader of workgroup 1 (Nanostructure) for the COST Action MP1406 - MultiscaleSolar
**- Since 2016:** In charge of International Affairs for the Materials science dept. at the INSA Rennes.
Selected publications:
=========================
\- Structural and thermodynamic limits of layer thickness in 2D halide perovskites. ***PNAS***, 116, 58, **2019**
\- Concept of Lattice mismatch an emergence of surface states in 2D hybrid perovskite QW. ***Nano Lett.***, 18, 9, **2018**
\- Universal description of III-V/Si epitaxial growth processes. ***Phys. Rev. Materials***, 2, 060401(R), **2018**
\- A stress-free and textured GaP template on Si for sol. wat. split.. ***Ad. Funct. Mat.***, 28, 1801585, **2018**
\- Scaling law for excitons in 2D perovskite quantum wells. ***Nat. Com.***, 9, 2254, **2018**
\- Anharmonicity and Disorder in the Black Phases of etc. ***ACS Nano***, 12, 3477, **2018**
\- Composite Nature of Layered Hybrid Perovskites: etc. ***ACS Nano***, 12, 3321, **2018**
\- Hybrid Dion–Jacobson 2D Lead Iodide Perovskites. ***JACS***, 140, 3775, **2018**
\- Decreasing the electronic confinement in layered perovskites through intercalation. ***Chem. Sci.***, **2017**
\- Extremely efficient internal exciton dissociation through edge states in 2D HOP. ***Science***, 355, **2017**
\- Advances and Promises of Layered Halide Hybrid Perovskite Semiconductors. ***ACS Nano***, 10, **2016**
\- Rashba and Dresselhaus Effects in HOP: From Basics to Devices. ***ACS Nano***, 9, 11557, **2015**
\- First-principles study of a NBS glass-former. I &II. ***Phys. Rev. B*** 91, 134201 & 134202, **2015**
\- Analysis of Multivalley and Multibandgap Absorption etc. ***J. Phys. Chem. C*** 118, 11566, **2014**
\- DFT and k·p modelling of the phase transitions of lead HOP etc. ***RRL*** 8, 31, **2014**
\- Importance of soc in hop for photovoltaic applications. ***J. Phys. Chem. Lett.*** 4, 2999, **2013**
\- Electronic model for self-assembled hybrid perovskite etc. ***Phys. Rev. B*** 86, 205301, **2012**
Publications
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Optical and structural characterization of thin MoS2 layers on SiO2/Si substrates, towards the development of MoS2/Si heterojunction photovoltaics.44th International Semiconductor Conference (CAS 2021), Oct 2021, Online, Romania. ⟨10.1109/CAS52836.2021.9604140⟩
Communication dans un congrès
hal-03796793v1
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Multiband electronic transitions in 2D and 3D hybrid perovskites: recent resultsEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
Communication dans un congrès
hal-01933563v1
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Numerical investigation of the effect of interface conditions in the perovskite-based single junction and tandem solar cells9th Integrated PhotoVoltaic Technical Conference (i-PVTC 2018), Sep 2018, Cassis, France
Communication dans un congrès
hal-03148326v1
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Nano Beam X-ray Scattering on GaP/Si for III-V Monolithic Integration on SiliconEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
Communication dans un congrès
hal-02352639v1
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Numerical simulation of HTM-free and WOx based perovskite cells: Effects of interface conditions17th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD'17), Jul 2017, Copenhagen, Denmark
Communication dans un congrès
hal-01574953v1
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A new approach to the modelling of Kelvin Probe Microscopy of heterostructures in dark and under illumination17th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD'17), Jul 2017, Copenhagen, Denmark. Post-Deadline Paper
Communication dans un congrès
hal-01574959v1
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III-V/Si 3D crystal growth: a thermodynamic descriptionEnergy Materials Nanotechnology Meeting 2017 / Collaborative Conference on Crystal Growth (EMN 3CG 2017), Aug 2017, Berlin, Germany
Communication dans un congrès
hal-01708282v1
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Dielectric properties of hybrid perovskites and drift-diffusion modelling of perovskite/silicon tandem cellsSPIE Photonics West - OPTO 2016, Feb 2016, San Francisco, United States. pp.9743-21
Communication dans un congrès
hal-01397746v1
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First stage results on III-V/Si tandem cells using GaAsPN dilute-nitrideEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
Communication dans un congrès
hal-01496924v1
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3D GaP/Si(001) growth mode and antiphase boundaries19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
Communication dans un congrès
hal-01497144v1
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Etude de la croissance cohérente de GaP/Si(001) en couche minceRéunion plénière du GDR Pulse (PULSE 2016), Jul 2016, Marseille, France
Communication dans un congrès
hal-01497149v1
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Advanced concepts of photovoltaics based on III-V compounds16th International Conference of Physical Chemistry (ROMPHYSCHEM-16), Sep 2016, Galaţi, Romania
Communication dans un congrès
hal-01496667v1
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Numerical and experimental ongoing on III-V/Si high-efficiency tandem solar cellEuropean Congress and Exhibition on Advanced Materials and Processes (EUROMAT 2015), Sep 2015, Warsaw, Poland
Communication dans un congrès
hal-01203374v1
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Towards the III-V/Si CPV on Si substratesEuropean Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
Communication dans un congrès
hal-01403375v1
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Wide optical band gap Al4SiC4European Congress and Exhibition on Advanced Materials and Processes (EUROMAT 2015), Sep 2015, Warsaw, Poland
Communication dans un congrès
hal-01203372v1
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Optical properties of wide band gap Al4SiC4: experimental and theoretical approachesEuropean Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
Communication dans un congrès
hal-01162159v1
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Toward the III-V/Si high efficiency tandem solar cell7th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2015, Bucarest, Romania
Communication dans un congrès
hal-01497190v1
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Electroluminescence of InGaAs/GaP quantum dots and band engineering of AlGaP/GaP laser injection layersCompound Semiconductor Week 2015 (CSW 2015), Jun 2015, Santa-Barbara, United States
Communication dans un congrès
hal-01147506v1
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Structural, electronic properties and carrier dynamics in InGaAs(N)/GaP quantum dots18th European Molecular Beam Epitaxy Workshop (Euro-MBE 2015), Mar 2015, Canazei, Italy
Communication dans un congrès
hal-01147481v1
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Epitaxie cohérente de composés GaP et GaAsPN à azote dilué sur substrats de Si pour l’élaboration de cellules PV tandem III-V/SiMatériaux 2014, Nov 2014, Montpellier, France
Communication dans un congrès
hal-01115312v1
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Using high pressure to unravel the nature of optical transitions in (In,Ga)As/GaP quantum dots16th High Pressure in Semiconductor Physics conference (HPSP-16), Aug 2014, Mexico, Mexico
Communication dans un congrès
hal-01114998v1
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Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩
Communication dans un congrès
hal-01114877v1
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Raccordements de bandes et profils de constantes diélectriques pour des hétérostructures 2D à semiconducteursGDR co-DFT, May 2013, guidel, France
Communication dans un congrès
hal-00827732v1
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Ab initio investigation of defect nucleation at III-V/Si heterointerface for tandem solar cells applicationsEuropean Materials Research Society meeting E-MRS 2013, May 2013, Strasbourg, France
Communication dans un congrès
hal-00918729v1
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Optical, microstructural, vibrational and theoretical studies of p-type SrCu2O2 and BaCu2O2 Transparent Conductive OxidesSPIE Photonics West - OPTO 2013, Feb 2013, San Francisco, United States. pp.86261Y, ⟨10.1117/12.2014328⟩
Communication dans un congrès
hal-01162131v1
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Monolithic integration of diluted-nitride III-V-N compounds on silicon substrates : toward the III-V/Si Concentrated PhotovoltaicsInternational Symposium on Inorganic and Environmental Materials, Oct 2013, Rennes, France
Communication dans un congrès
hal-00918754v1
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Design of a lattice-matched III-V-N/Si photovoltaic tandem cell monolithically integrated on silicon substrate13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2013), Aug 2013, Vancouver, Canada. pp.1397-1403, ⟨10.1007/s11082-014-9909-z⟩
Communication dans un congrès
hal-00951949v1
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Theoretical and experimental study of (In,Ga)As/GaP quantum dotsInternational Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), Jul 2012, Dresden, Germany. pp.643, ⟨10.1186/1556-276X-7-643⟩
Communication dans un congrès
hal-00726861v1
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Monolithic growth of III-V-N diluted nitride devices on Si substrate for solar cellsJournées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France
Communication dans un congrès
hal-00788544v1
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Vibrational properties of SrCu2O2 studied via Density Functional Theory calculations and compared to Raman and infrared spectroscopy measurementsEuropean Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.113-116, ⟨10.1016/j.tsf.2012.10.130⟩
Communication dans un congrès
hal-00805323v1
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Toward a III-V/Si tandem solar cell: characterization and modelingJournées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France
Communication dans un congrès
hal-00788485v1
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Contribution of DFT code to photovoltaic applicationsJournées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France
Communication dans un congrès
hal-00788493v1
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Raman investigation of GaP-Si interfaces grown by molecular beam epitaxyEuropean Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.72-75, ⟨10.1016/j.tsf.2012.11.132⟩
Communication dans un congrès
hal-00788308v1
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Performances of III-P/Si based photoelectrodes for solar hydrogen productionJournées Nationales du photovoltaïque 2020, Jan 2021, Dourdan, France. 2021
Poster de conférence
hal-03032889v1
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A Study on the Strain Distribution by Scanning X-ray diffraction on GaP/Si for III-V Monolithic Integration on Silicon for Nonlinear OpticsRayons X et Matière 2019, Nov 2019, Nancy, France
Poster de conférence
hal-03108397v1
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Computational design of high performance hybrid perovskite on silicon 2-T tandem solar cells based on a tunnel junctionInternational Conference on Perovskite Thin Film Photovoltaics, Photonics and Optoelectronics 2018 (ABXPV&PEROPTO 18), Feb 2018, Rennes, France. 2018
Poster de conférence
hal-01722973v1
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Numerical investigation of the effect of interface conditions in HTM-free, printable WOx based and inverted perovskite solar cellsPoster de conférence hal-01812584v1 |
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Numerical investigation of the effect of interface conditions in HTM-free, printable WOx based and inverted perovskite solar cellsInternational Conference on Perovskite Thin Film Photovoltaics, Photonics and Optoelectronics 2018 (ABXPV&PEROPTO 18), Feb 2018, Rennes, France. 2018
Poster de conférence
hal-01721648v1
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Computational design of high performance hybrid perovskite on silicon 2-T tandem solar cells based on a tunnel junction17th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD'17), Jul 2017, Copenhagen, Denmark
Poster de conférence
hal-01574956v1
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Numerical investigation of the effect of interface conditions in HTM-free and printable WOx based perovskite solar cellsPoster de conférence hal-01660167v1 |
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Towards III-V on silicon solar cells7è Journées Nationales du PhotoVoltaïque (JNPV 2017), Dec 2017, Dourdan, France. 107, pp.191603 - 191603, 2015
Poster de conférence
hal-01660154v1
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Influence of Schottky contact on the HTM-free perovskite solar cells3è Journées Pérovskites Hybrides (JPH 2017), May 2017, Angers, France
Poster de conférence
hal-01523633v1
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X-ray Coherent Scattering on GaP/Si for III-V Monolithic Integration on SiliconInternational Workshop on Phase Retrieval and Coherent Scattering (COHERENCE 2016), Jun 2016, Saint-Malo, France. 2016
Poster de conférence
hal-01496666v1
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GaAsPN Single and Tandem Solar Cells on Silicon19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
Poster de conférence
hal-01496922v1
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Relationship between antiphase domains, roughness and surface/interface energies during the epitaxial growth of GaP on SiEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
Poster de conférence
hal-01497064v1
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Vers les cellules solaires à haut rendement à base de composés III-V sur substrats bas-couts de siliciumOptique Bretagne 2015 - Horizons de l'Optique, Jul 2015, Rennes, France
Poster de conférence
hal-01497238v1
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Electroluminescence de boites quantiques InGaAs/GaP et ingénérie de bande des couches d’injection laser AlGaP/GaPOptique Bretagne 2015 - 35ème Journées Nationales d'Optique Guidée (JNOG'35), Jul 2015, Rennes, France
Poster de conférence
hal-01497243v1
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Carrier capture and relaxation in GaAsPN/GaP quantum wells32nd International Conference on the Physics of Semiconductors (ICPS 2014), Aug 2014, Austin, United States. 2014
Poster de conférence
hal-01115282v1
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Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots32nd International Conference on the Physics of Semiconductors (ICPS 2014), Aug 2014, Austin, United States. 2014
Poster de conférence
hal-01115307v1
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Computational design of high performance hybrid perovskite on silicon tandem solar cells2016
Pré-publication, Document de travail
hal-01275497v1
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