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Laurent PEDESSEAU

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Identifiants chercheurs

Présentation

Education: ========== **2019:** Habilitation Degree in Physics, Université Rennes (France) **2004:** Ph.D in Physics, Université Paul Sabatier at Toulouse (France); Advisor: Prof. David Mainprice About: ====== Dr Pedesseau is an Associate Professor at the INSA Rennes (FOTON Institute - CNRS) whose work is aimed at the understanding of physical processes in the III-V semiconductor nanostructures for silicon photonics, the hybrid perovskites and novel materials for photovoltaics, and optoelectronic device simulations for optical-communications. His recent scientific interests include: 1) polar surface and interface energies of semiconductors; 2) first principles simulation (including the spin-orbit effect) of mechanical stability, electronic, and optical properties of 3D and 2D semiconductors; 3) electronic structure theory beyond the DFT such as hybrid functionals (HSE), many-body corrections GW, and DFT-1/2; 4) HPC technology for exotic and highly demanding simulations in terms of the large memory footprint and extensive CPUs communications (thousands). Employment: ============== **2011-present:** Associate Professor, Physics Department, INSA of Rennes, France **2008-2011:** Postdoctoral fellow, ICG and LCC, University of Montpellier, France **2006-2008:** Postdoctoral fellow, Physics Department, INSA of Rennes, France **2004-2006:** Postdoctoral fellow, Chemistry department, University College London, London, UK **2001-2004:** Ph.D. fellow, University Paul Sabatier, Toulouse, France Research interests: ====================== Material science, Semiconductor physics, Quantum nanostructures, Solar Energy, Advanced Materials Theoretical physics, Phase transitions, Dielectric and piezoelectric properties Density functional theory, k.p method, Finite element method Administrative responsibilities: =================================== **- Since 2016:** Leader of workgroup 1 (Nanostructure) for the COST Action MP1406 - MultiscaleSolar **- Since 2016:** In charge of International Affairs for the Materials science dept. at the INSA Rennes. Selected publications: ========================= \- Structural and thermodynamic limits of layer thickness in 2D halide perovskites. ***PNAS***, 116, 58, **2019** \- Concept of Lattice mismatch an emergence of surface states in 2D hybrid perovskite QW. ***Nano Lett.***, 18, 9, **2018** \- Universal description of III-V/Si epitaxial growth processes. ***Phys. Rev. Materials***, 2, 060401(R), **2018** \- A stress-free and textured GaP template on Si for sol. wat. split.. ***Ad. Funct. Mat.***, 28, 1801585, **2018** \- Scaling law for excitons in 2D perovskite quantum wells. ***Nat. Com.***, 9, 2254, **2018** \- Anharmonicity and Disorder in the Black Phases of etc. ***ACS Nano***, 12, 3477, **2018** \- Composite Nature of Layered Hybrid Perovskites: etc. ***ACS Nano***, 12, 3321, **2018** \- Hybrid Dion–Jacobson 2D Lead Iodide Perovskites. ***JACS***, 140, 3775, **2018** \- Decreasing the electronic confinement in layered perovskites through intercalation. ***Chem. Sci.***, **2017** \- Extremely efficient internal exciton dissociation through edge states in 2D HOP. ***Science***, 355, **2017** \- Advances and Promises of Layered Halide Hybrid Perovskite Semiconductors. ***ACS Nano***, 10, **2016** \- Rashba and Dresselhaus Effects in HOP: From Basics to Devices. ***ACS Nano***, 9, 11557, **2015** \- First-principles study of a NBS glass-former. I &II. ***Phys. Rev. B*** 91, 134201 & 134202, **2015** \- Analysis of Multivalley and Multibandgap Absorption etc. ***J. Phys. Chem. C*** 118, 11566, **2014** \- DFT and k·p modelling of the phase transitions of lead HOP etc. ***RRL*** 8, 31, **2014** \- Importance of soc in hop for photovoltaic applications. ***J. Phys. Chem. Lett.*** 4, 2999, **2013** \- Electronic model for self-assembled hybrid perovskite etc. ***Phys. Rev. B*** 86, 205301, **2012**

Publications

nicolas-bertru
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Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive Properties

Lipin Chen , Yoan Léger , Gabriel Loget , Mekan Piriyev , Imen Jadli
Advanced Science, 2022, 9 (2), pp.2101661. ⟨10.1002/advs.202101661⟩
Article dans une revue hal-03426793v1
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Antiphase boundaries in III-V semiconductors: Atomic configurations, band structures, and Fermi levels

Lipin Chen , Laurent Pedesseau , Yoan Léger , Nicolas Bertru , Jacky Even
Physical Review B, 2022, 106 (16), pp.165310. ⟨10.1103/PhysRevB.106.165310⟩
Article dans une revue hal-03966732v1
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Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities

Lipin Chen , Oliver Skibitzki , Laurent Pedesseau , Antoine Létoublon , Julie Stervinou
ACS Nano, 2020, 14 (10), pp.13127-13136. ⟨10.1021/acsnano.0c04702⟩
Article dans une revue hal-03032030v1
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Shape transition in InAs nanostructures formed by Stranski-Krastanow growth mode on InP (001) substrate

Anne Ponchet , Laurent Pedesseau , Alain Le Corre , Charles Cornet , Nicolas Bertru
Applied Physics Letters, 2019, 114 (17), pp.173102. ⟨10.1063/1.5091058⟩
Article dans une revue hal-02119035v1
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Universal description of III-V/Si epitaxial growth processes

Ida Lucci , Simon Charbonnier , L. Pedesseau , Maxime Vallet , Laurent Cerutti
Physical Review Materials, 2018, 2 (6), pp.060401(R). ⟨10.1103/PhysRevMaterials.2.060401⟩
Article dans une revue hal-01833206v1
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A Stress-Free and Textured GaP Template on Silicon for Solar Water Splitting

Ida Lucci , Simon Charbonnier , Maxime Vallet , Pascal Turban , Yoan Léger
Advanced Functional Materials, 2018, 28 (30), pp.1801585. ⟨10.1002/adfm.201801585⟩
Article dans une revue hal-01803990v1
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Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics

Olivier Durand , Samy Almosni , Yanping Wang , C. Cornet , A. Létoublon
Energy Harvesting and Systems, 2014, 1 (3-4), pp.147-156. ⟨10.1515/ehs-2014-0008⟩
Article dans une revue hal-01166477v1

Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells

Samy Almosni , Cédric Robert Robert , Thanh Tra Nguyen , Charles Cornet , Antoine Létoublon
Journal of Applied Physics, 2013, 113 (12), pp.123509. ⟨10.1063/1.4798363⟩
Article dans une revue hal-00918663v1
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Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications

Olivier Durand , Cédric Robert Robert , Thanh Tra Nguyen , Samy Almosni , Thomas Quinci
Proceedings of SPIE, the International Society for Optical Engineering, 2013, Quantum sensing and nanophotonic devices X, 8631, pp.863126. ⟨10.1117/12.2012670⟩
Article dans une revue hal-00842763v1

Hétéro-épitaxie III-V/Si : contrôle des propriétés des surfaces et interfaces pour la photo-électrochimie

Charles Cornet , Lipin Chen , Mekan Piriyev , Gabriel Loget , Bruno Fabre
35èmes Journées Surfaces et Interfaces, Jan 2022, Dijon (virtual), France
Communication dans un congrès hal-03588378v1

Robust 2D semimetallic inclusions boost performances of III-V/Si heterostructures for water-splitting

Lipin Chen , Yoan Léger , Gabriel Loget , Mekan Piriyev , Imen Jadli
17è Journées de la Matière Condensée (JMC 17), Aug 2021, Rennes (virtual), France
Communication dans un congrès hal-03402743v1

III-V/Si photoelectrodes with ambipolar properties

Lipin Chen , Yoan Léger , Gabriel Loget , Mekan Piriyev , Imen Jadli
5èmes Journées des Carburants Solaires, Sep 2021, Saint Jacut de la Mer, France
Communication dans un congrès hal-03408282v1

Hybrid ambipolar 2D semimetal/semiconductor III-V/Si heterostructures: Promises for photonics, energy harvesting and electronics

Charles Cornet , Lipin Chen , Mekan Piriyev , Jean-Baptiste Rodriguez , Gabriel Loget
Webinar on Materials science, engineering and technology - VEBLEO, VEBLEO international organization, Dec 2021, virtual, India
Communication dans un congrès hal-03588366v1

III-V/Si antiphase boundaries used as 2D-semimetallic topological vertical inclusions for solar hydrogen production

Lipin Chen , Yoan Léger , Gabriel Loget , Mekan Piriyev , Imen Jadli
21st International Conference on Molecular Beam Epitaxy (IC-MBE 2021), Sep 2021, Mexico (virtual), Mexico
Communication dans un congrès hal-03392254v1

GaPSb/Si tandem material with APBs for efficient overall water splitting

Lipin Chen , Mahdi Alqahtani , Christophe Levallois , Antoine Létoublon , Julie Le Pouliquen
Journées Nanomatériaux de Rennes, Jan 2020, Rennes, France
Communication dans un congrès hal-03032905v1

Universal growth mechanism of III-V/Si: using antiphase boundaries for devices.

Charles Cornet , Ida Lucci , Lipin Chen , Laurent Pedesseau , Rozenn Bernard
Réunion plénière du GDR Pulse (PULSE 2019), Jul 2019, Clermont-Ferrand, France
Communication dans un congrès hal-02189095v1

A universal mechanism to describe III-V epitaxy on Si

Ida Lucci , Simon Charbonnier , Laurent Pedesseau , Maxime Vallet , Laurent Cerutti
20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany
Communication dans un congrès hal-02048639v1

III-V/Si photoelectrodes: a new route for solar hydrogen production

Charles Cornet , Lipin Chen , Mahdi Alqahtani , Christophe Levallois , Antoine Létoublon
11è Journées Scientifiques de Porquerolles (JSP2019), C'Nano-PACA, Sep 2019, Porquerolles, France
Communication dans un congrès hal-02305423v1

GaPSb/Si photoelectrode for Solar Fuel Production

Lipin Chen , Christophe Levallois , Antoine Létoublon , Julie Le Pouliquen , Rozenn Piron
European COST multsicaleSolar Final meeting, Apr 2019, Sofia, Bulgaria
Communication dans un congrès hal-03102622v1

Solar Water Splitting: surface energy engineering of GaP Template on Si

Laurent Pedesseau , Ida Lucci , Simon Charbonnier , Pascal Turban , Yoan Léger
European Materials Research Society - Spring Meeting 2019 (E-MRS 2019 Spring Meeting), Apr 2019, Phoenix, United States
Communication dans un congrès hal-02114792v1

Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications

Ida Lucci , Simon Charbonnier , Maxime Vallet , Pascal Turban , Yoan Léger
20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Tu-P-43(S)
Communication dans un congrès hal-01910556v1

A general III-V/Si growth process description

Ida Lucci , Simon Charbonnier , Laurent Pedesseau , Maxime Vallet , Laurent Cerutti
European Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
Communication dans un congrès hal-01910535v1

III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation

Ida Lucci , Simon Charbonnier , Laurent Pedesseau , Maxime Vallet , Laurent Cerutti
34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
Communication dans un congrès hal-01910543v1

(114) GaP surface texturation on Si for water splitting

Ida Lucci , Simon Charbonnier , Maxime Vallet , Pascal Turban , Yoan Léger
EMRS Spring meeting 2018, Jun 2018, Strasbourg, France
Communication dans un congrès hal-01708047v1

GaP Template on Si for Solar Water Splitting: surface energy engineering

Laurent Pedesseau , Ida Lucci , Simon Charbonnier , Maxime Vallet , Pascal Turban
nanoGe Fall Meeting 2018 (NGFM18), Oct 2018, Torremolinos, Spain
Communication dans un congrès hal-01909068v1

A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy

Ida Lucci , Simon Charbonnier , Laurent Pedesseau , Maxime Vallet , Laurent Cerutti
20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S)
Communication dans un congrès hal-01910554v1

Quantitative evaluation of microtwins and antiphase defects towards a GaP/Si platform for monolithic integrated photonics

Yanping Wang , Antoine Létoublon , Thanh Tra Nguyen , G. Patriarche , Anne Ponchet
European Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
Communication dans un congrès hal-01497220v1

Epitaxie cohérente de composés GaP et GaAsPN à azote dilué sur substrats de Si pour l’élaboration de cellules PV tandem III-V/Si

Olivier Durand , Samy Almosni , Yanping Wang , Charles Cornet , Antoine Létoublon
Matériaux 2014, Nov 2014, Montpellier, France
Communication dans un congrès hal-01115312v1

Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots

Cédric Robert Robert , Charles Cornet , Thanh Tra Nguyen , M. Nestoklon , Katiane Pereira da Silva
26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩
Communication dans un congrès hal-01114877v1

Monolithic integration of diluted-nitride III-V-N compounds on silicon substrates : toward the III-V/Si Concentrated Photovoltaics

Olivier Durand , Samy Almosni , Cédric Robert Robert , Thanh Tra Nguyen , Yanping Wang
International Symposium on Inorganic and Environmental Materials, Oct 2013, Rennes, France
Communication dans un congrès hal-00918754v1

Monolithic growth of III-V-N diluted nitride devices on Si substrate for solar cells

Olivier Durand , Samy Almosni , Cédric Robert Robert , Thanh Tra Nguyen , Charles Cornet
Journées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France
Communication dans un congrès hal-00788544v1
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Theoretical and experimental study of (In,Ga)As/GaP quantum dots

Cédric Robert Robert , Thanh Tra Nguyen , Charles Cornet , Pascal Turban , Mathieu Perrin
International Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), Jul 2012, Dresden, Germany. pp.643, ⟨10.1186/1556-276X-7-643⟩
Communication dans un congrès hal-00726861v1

Stransky-Krastanow Gas Source MBE growth and optical properties of InAs/GaP quantum dots

Charles Cornet , Olivier Dehaese , Laurent Pedesseau , Ibrahim Alghoraibi , Tony Rohel
euro-MBE conference, Mar 2007, Sierra nevada, Granada, France. pp.1
Communication dans un congrès hal-00491810v1