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Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires

 Pierre Tchoulfian , Fabrice Donatini , François Levy , Benoît Amstatt , Amélie Dussaigne , et al.
Applied Physics Letters, 2013, 103 (20), pp.202101. ⟨10.1063/1.4829857⟩
Article dans une revue hal-00905599v1

Electron mobility in phosphorous doped {111} homoepitaxial diamond

 Julien Pernot , Satoshi Koizumi
Applied Physics Letters, 2008, 93 (5), pp.052105. ⟨10.1063/1.2969066⟩
Article dans une revue hal-00853416v1

Role of deep and shallow donor levels on n-type conductivity of hydrothermal ZnO

 Stéphane Brochen , Carole Granier , Guy Feuillet , Julien Pernot
Applied Physics Letters, 2012, 100 (5), pp.052115. ⟨10.1063/1.3681168⟩
Article dans une revue hal-00740909v1

Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor

 Aurélien Maréchal , Manuela Aoukar , Christophe Vallee , Chloé Rivière , David Eon , et al.
Applied Physics Letters, 2015, 107 (14), pp.141601. ⟨10.1063/1.4931123⟩
Article dans une revue hal-01364101v1
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Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam

 Akira Uedono , Alexandra-Madalina Siladie , Julien Pernot , Bruno Daudin , Shoji Ishibashi
Journal of Applied Physics, 2019, 125 (17), pp.175705. ⟨10.1063/1.5088653⟩
Article dans une revue hal-02164173v1

Monolithic integration in CVD diamond: Schottky power diodes and integrated temperature sensor

 Nicolas Clément, Jean-Paul Rouger , D. Eon , Gaëtan Perez , Pierre-Olivier Jeannin , Pierre Lefranc , et al.
2016 MRS Spring Meeting and Exhibit - Diamond Power Electronic Devices symposium, Mar 2016, Phoenix, United States
Communication dans un congrès hal-01306775v1

Towards a 3D semantic sketcher for car aesthetic design

 Vincent Cheutet , Chiara Catalano , Bianca Falcidieno , F. Giannini , Jean-Claude Léon , et al.
First Int. Workshop on Shapes&Semantics, Jun 2006, Matsushita, Japan
Communication dans un congrès hal-00375312v1
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Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

 J.C. Piñero , J. de Vecchy , D. Fernández , G. Alba , J. Widiez , et al.
Applied Surface Science, 2020, 528, pp.146998. ⟨10.1016/j.apsusc.2020.146998⟩
Article dans une revue hal-04094901v1

Comparison of diamond based non-volatile photo-switch using phosphorus and nitrogen deep donors as gate dopants

 Martin Kah , Cédric Masante , Franz Koeck , Nicolas C. Rouger , Robert Nemanich , et al.
32nd International Conference on Diamond and Carbon Materials, Sep 2022, Lisbonne, Portugal
Communication dans un congrès hal-03867185v1

Determination of Current Leakage Sites in Diamond p–n Junction

 Takuya Murooka , Hitoshi Umezawa , Toshiharu Makino , Masahiko Ogura , Hiromitsu Kato , et al.
physica status solidi (a), 2019, 216 (21), pp.1900243. ⟨10.1002/pssa.201900243⟩
Article dans une revue hal-04134622v1

Polarity-dependent selective area growth of ZnO nanorods by chemical bath deposition

 Thomas Cossuet , E. Appert , J.-L. Thomassin , F. Donatini , A. M. Lord , et al.
Matériaux 2018, Nov 2018, Strasbourg, France
Communication dans un congrès hal-01981240v1

Model implementation towards the prediction of J(V) characteristics in diamond bipolar device simulations

 Aurélien Maréchal , Nicolas Clément, Jean-Paul Rouger , Jean-Christophe Crébier , Julien Pernot , Satoshi Koizumi , et al.
Diamond and Related Materials, 2014, 43, pp.34. ⟨10.1016/j.diamond.2014.01.009⟩
Article dans une revue hal-00968208v1

Deep-depletion mode boron doped monocrystalline diamond metal oxide semiconductor field effect transistor

 Thanh-Toan Pham , Julien Pernot , Gaëtan Perez , David Eon , Etienne Gheeraert , et al.
IEEE Electron Device Letters, 2017, 38 (11), pp.1571-1574. ⟨10.1109/LED.2017.2755718⟩
Article dans une revue hal-01617256v1

Boron incorporation issues in diamond when TMB is used as extreme doping levels

 Pierre-Nicolas Volpe , Jean-Charles Arnault , Nicolas Tranchant , Gauthier Chicot , Julien Pernot , et al.
Diamond and Related Materials, 2012, 22, pp.136-141. ⟨10.1016/j.diamond.2011.12.019⟩
Article dans une revue istex hal-00739495v1
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Hydrogen-induced passivation of boron acceptors in monocrystalline and polycrystalline diamond

 Julien Barjon , N. Habka , Jacques Chevallier , François Jomard , E. Chikoidze , et al.
Physical Chemistry Chemical Physics, 2011, 13 (24), pp.11511-11516. ⟨10.1039/c1cp20303g⟩
Article dans une revue hal-00740169v1
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Mg and In Codoped p-type AlN Nanowires for pn Junction Realization

 Alexandra-Madalina Siladie , Gwenolé Jacopin , Ana Cros , Nuria Garro , Eric Robin , et al.
Nano Letters, 2019, 19 (12), pp.8357-8364. ⟨10.1021/acs.nanolett.9b01394⟩
Article dans une revue hal-03082581v1
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Analytic modeling of an hybrid power module based on diamond and SiC devices

 Marine Couret , Anne Castelan , Nazareno Donato , Florin Udrea , Julien Pernot , et al.
Diamond and Related Materials, 2022, 124, pp.108936. ⟨10.1016/j.diamond.2022.108936⟩
Article dans une revue hal-03346306v1
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Nanoscale Dopant Profiling of Individual Semiconductor Wires by Capacitance–Voltage Measurement

 Timothée Lassiaz , Pierre Tchoulfian , Fabrice Donatini , Julien Brochet , Romain Parize , et al.
Nano Letters, 2021, 21 (8), pp.3372-3378. ⟨10.1021/acs.nanolett.0c04491⟩
Article dans une revue hal-03276868v1

Deep-Depletion diamond metal-oxide-semiconductor field-effect transistor with source-field plate for power converters

 Damien Michez , Marine Couret , Juliette Letellier , Khaled Driche , Julien Pernot , et al.
32nd International Conference on Diamond and Carbon Materials, Sep 2022, Lisbonne, Portugal
Communication dans un congrès hal-03867163v1

Power Electronics Device Applications of Diamond Semiconductors

 Satoshi Koizumi , Hitoshi Umezawa , Julien Pernot , M. Suzuki
Satoshi Koizumi; Hitoshi Umezawa; Julien Pernot; Mariko Suzuki. Woodhead Publishing, 2018
Ouvrages hal-02009696v1

Diamond MIS Transistor

 Julien Pernot , Nicolas C. Rouger , David Eon , Etienne Gheeraert , Gauthier Chicot , et al.
United States, Patent n° : US11569381 (B2). 2023
Brevet hal-04019131v1

Models and parameters study for diamond electronic devices simulations

 Aurélien Maréchal , Nicolas Clément, Jean-Paul Rouger , Jean-Christophe Crébier , Julien Pernot , S. Koizumi , et al.
74th Japan Society of Applied Physics Autumn Meeting. (JSAP-MRS joint symposia), Sep 2013, Kyoto, Japan
Communication dans un congrès hal-00989536v1

Polarity-Dependent High Electrical Conductivity of ZnO Nanorods and Its Relation to Hydrogen

 Thomas Cossuet , Fabrice Donatini , Alex M. Lord , Estelle Appert , Julien Pernot , et al.
Journal of Physical Chemistry C, 2018, 122 (39), pp.22767-22775. ⟨10.1021/acs.jpcc.8b07388⟩
Article dans une revue hal-01977892v1

Polarity-dependent formation mechanisms and high electrical conductivity of selective area grown ZnO nanorods

 Thomas Cossuet , E. Appert , F. Donatini , A. M. Lord , J.-L. Thomassin , et al.
IWZnO 2018, Sep 2018, Warsaw, Poland
Communication dans un congrès hal-01981245v1

Diamond delta-FET

 Etienne Gheeraert , Aboulaye Traoré , Julien Pernot , Alexandre Fiori , Franck Omnès , et al.
Materials Research Society Fall Meeting, Nov 2011, Boston, United States
Communication dans un congrès hal-00968263v1

Delta doping for advanced diamond devices

 Etienne Gheeraert , Aboulaye Traoré , Julien Pernot , Alexandre Fiori , Franck Omnès , et al.
XXth International Materials Research Congress, Aug 2011, Cancun, Mexico
Communication dans un congrès hal-00968256v1
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DX center formation in highly Si doped AlN nanowires revealed by trap assisted space-charge limited current

 Rémy Vermeersch , Gwenolé Jacopin , Bruno Daudin , Julien Pernot
Applied Physics Letters, 2022, 120 (16), pp.162104. ⟨10.1063/5.0087789⟩
Article dans une revue hal-03686334v1
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Ultrahigh conversion efficiency of betavoltaic cell using diamond pn junction

 T. Shimaoka , H. Umezawa , K. Ichikawa , J. Pernot , S. Koizumi
Applied Physics Letters, 2020, 117 (10), pp.103902. ⟨10.1063/5.0020135⟩
Article dans une revue hal-04094877v1

Deep depletion concept for diamond MOSFET

 T. Pham , Nicolas C. Rouger , C. Masante , G. Chicot , F. Udrea , et al.
Applied Physics Letters, 2017, 111 (17), pp.173503. ⟨10.1063/1.4997975⟩
Article dans une revue hal-01701733v1
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High Al-content AlGaN channel high electron mobility transistors on silicon substrate

 Jash Mehta , Idriss Abid , Julien Bassaler , Julien Pernot , Philippe Ferrandis , et al.
e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2023, 3, pp.100114. ⟨10.1016/j.prime.2023.100114⟩
Article dans une revue hal-03952273v1
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