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Determination of Current Leakage Sites in Diamond p–n Junction

 Takuya Murooka , Hitoshi Umezawa , Toshiharu Makino , Masahiko Ogura , Hiromitsu Kato , et al.
physica status solidi (a), 2019, 216 (21), pp.1900243. ⟨10.1002/pssa.201900243⟩
Article dans une revue hal-04134622v1

Comparison of diamond based non-volatile photo-switch using phosphorus and nitrogen deep donors as gate dopants

 Martin Kah , Cédric Masante , Franz Koeck , Nicolas C. Rouger , Robert Nemanich , et al.
32nd International Conference on Diamond and Carbon Materials, Sep 2022, Lisbonne, Portugal
Communication dans un congrès hal-03867185v1

Role of deep and shallow donor levels on n-type conductivity of hydrothermal ZnO

 Stéphane Brochen , Carole Granier , Guy Feuillet , Julien Pernot
Applied Physics Letters, 2012, 100 (5), pp.052115. ⟨10.1063/1.3681168⟩
Article dans une revue hal-00740909v1

Model implementation towards the prediction of J(V) characteristics in diamond bipolar device simulations

 Aurélien Maréchal , Nicolas Clément, Jean-Paul Rouger , Jean-Christophe Crébier , Julien Pernot , Satoshi Koizumi , et al.
Diamond and Related Materials, 2014, 43, pp.34. ⟨10.1016/j.diamond.2014.01.009⟩
Article dans une revue hal-00968208v1

Electron mobility in phosphorous doped {111} homoepitaxial diamond

 Julien Pernot , Satoshi Koizumi
Applied Physics Letters, 2008, 93 (5), pp.052105. ⟨10.1063/1.2969066⟩
Article dans une revue hal-00853416v1

Towards a 3D semantic sketcher for car aesthetic design

 Vincent Cheutet , Chiara Catalano , Bianca Falcidieno , F. Giannini , Jean-Claude Léon , et al.
First Int. Workshop on Shapes&Semantics, Jun 2006, Matsushita, Japan
Communication dans un congrès hal-00375312v1
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Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam

 Akira Uedono , Alexandra-Madalina Siladie , Julien Pernot , Bruno Daudin , Shoji Ishibashi
Journal of Applied Physics, 2019, 125 (17), pp.175705. ⟨10.1063/1.5088653⟩
Article dans une revue hal-02164173v1

Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor

 Aurélien Maréchal , Manuela Aoukar , Christophe Vallee , Chloé Rivière , David Eon , et al.
Applied Physics Letters, 2015, 107 (14), pp.141601. ⟨10.1063/1.4931123⟩
Article dans une revue hal-01364101v1

Monolithic integration in CVD diamond: Schottky power diodes and integrated temperature sensor

 Nicolas Clément, Jean-Paul Rouger , D. Eon , Gaëtan Perez , Pierre-Olivier Jeannin , Pierre Lefranc , et al.
2016 MRS Spring Meeting and Exhibit - Diamond Power Electronic Devices symposium, Mar 2016, Phoenix, United States
Communication dans un congrès hal-01306775v1
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Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

 J.C. Piñero , J. de Vecchy , D. Fernández , G. Alba , J. Widiez , et al.
Applied Surface Science, 2020, 528, pp.146998. ⟨10.1016/j.apsusc.2020.146998⟩
Article dans une revue hal-04094901v1

Deep-depletion mode boron doped monocrystalline diamond metal oxide semiconductor field effect transistor

 Thanh-Toan Pham , Julien Pernot , Gaëtan Perez , David Eon , Etienne Gheeraert , et al.
IEEE Electron Device Letters, 2017, 38 (11), pp.1571-1574. ⟨10.1109/LED.2017.2755718⟩
Article dans une revue hal-01617256v1

Polarity-dependent selective area growth of ZnO nanorods by chemical bath deposition

 Thomas Cossuet , E. Appert , J.-L. Thomassin , F. Donatini , A. M. Lord , et al.
Matériaux 2018, Nov 2018, Strasbourg, France
Communication dans un congrès hal-01981240v1
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Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires

 Pierre Tchoulfian , Fabrice Donatini , François Levy , Benoît Amstatt , Amélie Dussaigne , et al.
Applied Physics Letters, 2013, 103 (20), pp.202101. ⟨10.1063/1.4829857⟩
Article dans une revue hal-00905599v1

From Transport Measurements to Infrared Reflectance Spectra of n-type Doped 4H-SiC Layer Stacks

 Julien Pernot , Jean Camassel , Hervé Peyre , Sylvie Contreras , Jean-Louis Robert
European Conference on Silicon Carbide and Related Materials (ECSCRM2002), Sep 2002, Linköping, Sweden. pp.403-406
Communication dans un congrès hal-00389889v1

Diamond Electronic Devices

 Etienne Gheeraert , Aboulaye Traoré , Julien Pernot , Gauthier Chicot , Alexandre Fiori , et al.
International Union of Materials Research Societies - International Conference on Electronic Materials, Sep 2012, Yokohama, Japan
Communication dans un congrès hal-00968270v1

Schottky diode architectures on p-type diamond for fast switching, high forward current density and high breakdown field rectifiers

 Pierre Muret , Pierre-Nicolas Volpe , Thu Nhi Tran Thi , Julien Pernot , Christophe Hoarau , et al.
Diamond and Related Materials, 2011, 20 (3), pp.285-289. ⟨10.1016/j.diamond.2011.01.008⟩
Article dans une revue istex hal-00739714v1

In situ biasing and off-axis electron holography of a ZnO nanowire

 Martien den Hertog , Fabrice Donatini , Robert Mcleod , Eva Monroy , Corinne Sartel , et al.
Nanotechnology, 2018, 29 (2), pp.025710. ⟨10.1088/1361-6528/aa923c⟩
Article dans une revue hal-01877698v1

How a diamond pn junction can be used to fabricate a non-volatile photo-switch?

 Cédric Masante , Martin Kah , Clément Hébert , Nicolas C. Rouger , Julien Pernot
26th Hasselt Diamond Workshop - SBDD XXVI, Mar 2022, Hasselt, Belgium
Communication dans un congrès hal-03738014v1

Commutation time of non-volatile photo-switch based on diamond Junction Field Effect Transistor

 Martin Kah , Cédric Masante , Fabrice Donatini , Gwenolé Jacopin , Nicolas C. Rouger , et al.
15th International Conference on New Diamond and Nano Carbons NDNC 2022, Jun 2022, Kanazawa, Japan
Communication dans un congrès hal-03738050v1

Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors

 O. Loto , M. Florentin , C. Masante , N. Donato , M. Hicks , et al.
IEEE Transactions on Electron Devices, 2018, 65 (8), pp.3361-3364. ⟨10.1109/TED.2018.2847340⟩
Article dans une revue hal-01977929v1

Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors

 T. Pham , J. Piñero , A. Maréchal , M. Gutierrez , F. Lloret , et al.
IEEE Transactions on Electron Devices, 2018, 65 (5), pp.1830-1837. ⟨10.1109/TED.2018.2813084⟩
Article dans une revue hal-01757885v1

200V, 4MV/cm lateral diamond MOSFET

 Thanh-Toan Pham , Julien Pernot , C. Masante , D. Eon , E. Gheeraert , et al.
2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268458⟩
Communication dans un congrès hal-01701734v1

Deep-depletion diamond metal–oxide–semiconductor field-effect transistor with source-field plate for power converters

 Damien Michez , Marine Couret , Juliette Letellier , Khaled Driche , Julien Pernot , et al.
Hasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium
Communication dans un congrès hal-04099969v1

Europium-Implanted AlN Nanowires for Red Light-Emitting Diodes

 José Cardoso , Maria Rosário Correia , Remy Vermeersch , Dirkjan Verheij , Gwenole Jacopin , et al.
ACS Applied Nano Materials, 2022, 5 (1), pp.972-984. ⟨10.1021/acsanm.1c03654⟩
Article dans une revue hal-04023348v1

Metal-oxide-diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

 J. Piñero , D. Araujo , A. Traoré , G. Chicot , A. Maréchal , et al.
physica status solidi (a), 2014, 211 (10), pp.2367 - 2371. ⟨10.1002/pssa.201431178⟩
Article dans une revue hal-01379124v1

Enabling high switching speed for diamond power transistors

 Nicolas Clément, Jean-Paul Rouger , Aurélien Maréchal , Thanh Long Le , Davy Colin , Julien Pernot , et al.
3rd French-Japanese workshop on Diamond Power Device, Jul 2015, France
Communication dans un congrès hal-01176598v1
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175V, > 5.4 MV/cm, 50 m(omega).cm2 at 250°C Diamond MOSFET and its reverse conduction

 Cédric Masante , Julien Pernot , Juliette Letellier , David Eon , Nicolas C. Rouger
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. pp.151-154, ⟨10.1109/ISPSD.2019.8757645⟩
Communication dans un congrès hal-02377367v1
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Zinc Vacancy-Hydrogen Complexes as Major Defects in ZnO Nanowires Grown by Chemical Bath Deposition

 José Villafuerte , Fabrice Donatini , Joseph Kioseoglou , Eirini Sarigiannidou , Odette Chaix-Pluchery , et al.
Journal of Physical Chemistry C, 2020, 124 (30), pp.16652-16662. ⟨10.1021/acs.jpcc.0c04264⟩
Article dans une revue hal-03025863v1
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Shallow donor and DX state in Si doped AlN nanowires grown by molecular beam epitaxy

 Rémy Vermeersch , Eric Robin , Ana Cros , Gwenolé Jacopin , Bruno Daudin , et al.
Applied Physics Letters, 2021, 119 (26), pp.262105. ⟨10.1063/5.0074454⟩
Article dans une revue hal-03523128v1

Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates

 Stéphane Brochen , M. Lafossas , Ivan-Christophe Robin , Pierre Ferret , Frédérique Gemain , et al.
Journal of Applied Physics, 2014, 115 (11), pp.113508. ⟨10.1063/1.4868591⟩
Article dans une revue hal-00984425v1
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