Nombre de documents

135


Article dans une revue44 documents

  • Paul Narchi, José Alvarez, Pascal Chrétien, Gennaro Picardi, Romain Cariou, et al.. Cross-Sectional Investigations on Epitaxial Silicon Solar Cells by Kelvin and Conducting Probe Atomic Force Microscopy: Effect of Illumination. Nanoscale Research Letters, SpringerOpen, 2016, 11 (1), pp.55. <10.1186/s11671-016-1268-1>. <hal-01266681>
  • Charles Renard, Timothée Molière, Nikolay Cherkashin, José Alvarez, Laetitia Vincent, et al.. High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed. Scientific Reports, Nature Publishing Group, 2016, 6, pp.25328. <10.1038/srep25328>. <hal-01316731>
  • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Ali Madouri, José Alvarez, et al.. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures. Journal of Physics: Condensed Matter, IOP Publishing, 2016, 28 (40), pp.404001. <10.1088/0953-8984/28/40/404001>. <hal-01363551>
  • David Reaux, José Alvarez, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Impact of defect-pool model parameters on the lifetime in c-Si/a-Si:H heterojunction solar cells. Energy Procedia, Elsevier, 2015, 77, pp.153-158. <10.1016/j.egypro.2015.07.023>. <hal-01188802>
  • Fethullah Günes, Hakim Arezki, Debora Pierucci, David Alamarguy, José Alvarez, et al.. Tuning the work function of monolayer graphene on 4H-SiC (0001) with nitric acid. Nanotechnology, Institute of Physics: Hybrid Open Access, 2015, 26 (44), pp.445702. <10.1088/0957-4484/26/44/445702>. <hal-01244484>
  • O Nos, W Favre, F Jay, F Ozanne, A Valla, et al.. Quality control method based on photoluminescence imaging for the performance prediction of c-Si/a-Si:H heterojunction solar cells in industrial production lines. Solar Energy Materials and Solar Cells, Elsevier, 2015, 144, pp.210-220. <www.elsevier.com/locate/solmat>. <10.1016/j.solmat.2015.09.009>. <hal-01241097>
  • Meiyong Liao, Thomas Stergiopoulos, José Alvarez, Surojit Chattopadhyay, Guihua Zhang. Wide-Bandgap Semiconductors: Nanostructures, Defects, and Applications. Journal of Nanomaterials, Hindawi Publishing Corporation, 2015, 2015, pp.713896. <10.1155/2015/713896>. <hal-01310873>
  • A Roigé, J Alvarez, Jean-Paul Kleider, I Martín, R Alcubilla. Microscale Spatially Resolved Characterization of Highly Doped Regions in Laser-Fired Contacts for High-Efficiency Crystalline Si Solar Cells. IEEE JOURNAL OF PHOTOVOLTAICS, 2015, 5, pp.545. <10.1109/JPHOTOV.2015.2392945>. <hal-01231753>
  • Jean-Paul Kleider, José Alvarez, Aurore Brézard-Oudot, Marie-Estelle Gueunier-Farret, Olga Maslova. Revisiting the theory and usage of junction capacitance: Application to high efficiency amorphous/crystalline silicon heterojunction solar cells. Solar Energy Materials and Solar Cells, Elsevier, 2015, 135, pp.8-16. <10.1016/j.solmat.2014.09.002>. <hal-01206182>
  • Ming Xu, Alexandre Jaffré, J Alvarez, Jean-Paul Kleider, Apichat Jittrong, et al.. Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots . AIP Conference Proceedings, American Institute of Physics, 2015, 1649, pp.3. <10.1063/1.4913536>. <hal-01239179>
  • Hakim Arezki, Kuan-I Ho, Alexandre Jaffré, David Alamarguy, J Alvarez, et al.. Characterization of N-doped multilayer graphene grown on 4H-SiC (0001). AIP Conference Proceedings, American Institute of Physics, 2015, 1649, pp.8. <10.1063/1.4913537>. <hal-01239163>
  • José Alvarez, M. Boutchich, Jean-Paul Kleider, T. Teraji, Y. Koide. Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging. Journal of Physics D: Applied Physics, IOP Publishing, 2014, 47 (35), pp.355102. <10.1088/0022-3727/47/35/355102>. <hal-01099593>
  • Mohamed Boutchich, H Arezki, D Alamarguy, K-I Ho, H Sediri, et al.. Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate. Applied Physics Letters, American Institute of Physics, 2014, 105, pp.233111. <10.1063/1.4903866>. <hal-01110217>
  • Mohamed Boutchich, Alexandre Jaffré, David Alamarguy, José Alvarez, A. Barras, et al.. Characterization of graphene oxide reduced through chemical and biological processes. Journal of Physics: Conference Series, IOP Publishing, 2013, 433 (1), pp.012001. <10.1088/1742-6596/433/1/012001>. <hal-00931274>
  • Charles Renard, N. Cherkasin, Alexandre Jaffré, Laetitia Vincent, A. Michel, et al.. Dislocation and antiphase domain free microscale GaAs crystals grown on SiO2 from (001) Si nano-areas. Applied Physics Letters, American Institute of Physics, 2013, 102 (19), pp.191915 - 191915-4. <10.1063/1.4807386>. <hal-00931275>
  • F. Marsolat, Dominique Tromson, Nicolas Tranchant, M. Pomorski, D. Lazaro-Ponthus, et al.. Diamond dosimeter for small beam sterotactic radiotherapy. Diamond and Related Materials, Elsevier, 2013, 33, pp.63-70. <10.1016/j.diamond.2013.01.003>. <hal-00931276>
  • Olga Maslova, Aurore Brézard-Oudot, Marie-Estelle Gueunier-Farret, José Alvarez, Wilfried Favre, et al.. Understanding inversion layers and band discontinuities in hydrogenated amorphous silicon/crystalline silicon heterojunctions from the temperature dependence of the capacitance. Applied Physics Letters, American Institute of Physics, 2013, 103 (18), pp.183907 - 183907-4. <10.1063/1.4826920>. <hal-00931277>
  • Djicknoum Diouf, Jean-Paul Kleider, Irène Ngo, Marie-Estelle Gueunier-Farret, José Alvarez. Nanowire solar cells using hydrogenated amorphous silicon: a modeling study. physica status solidi (a), Wiley, 2012, 209 (6), pp.1026-1030. <10.1002/pssa.201100756>. <hal-00778953>
  • Olga Maslova, Aurore Brézard-Oudot, Wilfried Favre, José Alvarez, A.S. Gudovskikh, et al.. Modeling of capacitance spectroscopy of (p) a-Si:H/(n) c-Si interfaces. physica status solidi (c), Wiley, 2012, 9 (6), pp.1481-1483. <10.1002/pssc.201100761>. <hal-00778954>
  • Mohamed Boutchich, José Alvarez, Djicknoum Diouf, Pere Roca I Cabarrocas, Meiyong Liao, et al.. Amorphous silicon diamond based heterojunctions with high rectification ratio. Journal of Non-Crystalline Solids, Elsevier, 2012, 358 (17), pp.2110-2113. <10.1016/j.jnoncrysol.2011.12.067>. <hal-00778949>
  • Olga Maslova, Marie-Estelle Gueunier-Farret, José Alvarez, A.S. Gudovskikh, E.I Terukov, et al.. Space charge capacitance spectroscopy in amorphous silicon Schottky diodes: Theory, modeling, and experiments. Journal of Non-Crystalline Solids, Elsevier, 2012, 358 (17), pp.2007-2010. <10.1016/j.jnoncrysol.2012.01.053>. <hal-00778950>
  • Meiyong Liao, Liwen Sang, Tokuyuku Teraji, Masataka Imura, José Alvarez, et al.. Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors. Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2012, 51, 090115 (7p.). <10.1143/JJAP.51.090115>. <hal-00778959>
  • Irène Ngo, Marie-Estelle Gueunier-Farret, José Alvarez, Jean-Paul Kleider. Modelling on c-Si/a-Si:H wire solar cells: some key parameters to optimize the photovoltaic performance. EPJ Photovoltaics, EDP sciences, 2012, 3, 30102 (6p.). <10.1051/epjpv/2012007>. <hal-00778955>
  • Peiqing Yu, Anne Migan-Dubois, José Alvarez, Arouna Darga, Virginie Vissac, et al.. Study of traps in P3HT:PCBM based organic solar cells using fractional thermally stimulated current technique. Journal of Non-Crystalline Solids, Elsevier, 2012, 358 (17), pp.2537-2540. <10.1016/j.jnoncrysol.2012.01.021>. <hal-00778958>
  • Jean-Paul Kleider, José Alvarez, Martin Labrune, Pere Roca I Cabarrocas, Olga Alexandrovna Maslova, et al.. Characterization of silicon heterojunctions for Solar Cells. Nanoscale Research Letters, SpringerOpen, 2011, 6, pp.152. <10.1186/1556-276X-6-152>. <hal-00641696>
  • José Alvarez, Irène Ngo, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Linwei Yu, et al.. Conductive-probe atomic force microscopy characterization of silicon nanowires. Nanoscale Research Letters, SpringerOpen, 2011, 6, pp.110. <10.1186/1556-276X-6-110>. <hal-00710727>
  • José Alvarez, Jean-Paul Kleider, R. Trotta, A. Polimeni, M. Capizzi, et al.. Giant and reversible enhancement of the electrical resistance of GaAs1−xNx by hydrogen irradiation. Physical Review B : Condensed matter and materials physics, American Physical Society, 2011, 84 (8), pp.085331. <10.1103/PhysRevB.84.085331>. <hal-00710737>
  • Olga Alexandrovna Maslova, José Alvarez, E.V. Gushina, Wilfried Favre, Marie-Estelle Gueunier-Farret, et al.. Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions. Applied Physics Letters, American Institute of Physics, 2010, 97 (25), pp.252110. <hal-00557102>
  • José Alvarez, M. Liao, Jean-Paul Kleider, Y. Koide, M. Imura. Ultraviolet Detectors Based on Ultraviolet–Ozone Modified Hydrogenated Diamond Surfaces. Applied Physics Express, 2009, 2, pp. 065501-065503. <hal-00445962>
  • M. Imura, M. Liao, José Alvarez, Y. Koide. Schottky−barrier photodiode using p−diamond epilayer grown on p+−diamond substrates. Diamond and Related Materials, Elsevier, 2009, 18, pp. 296-298. <hal-00445965>
  • Y. Koide, M. Liao, José Alvarez, M. Imura, K. Sueishi, et al.. Schottky photodiode using submicron thick diamond epilayer for flame sensing. Nano-micro Letters, 2009, 1 (1), pp.30-33. <10.5101/nml.v1i1.p30-33>. <hal-00763202>
  • M. Imura, Y. Koide, M. Liao, José Alvarez. Vertical-type Schottky-barrier photodiode using p-diamond epilayer grown on heavily boron-doped p+-diamond substrate. Diamond and Related Materials, Elsevier, 2008, 17 (11), pp.1916-1921. <10.1016/j.diamond.2008.04.012>. <hal-00763182>
  • M. Liao, Y. Koide, José Alvarez, M. Imura, Jean-Paul Kleider. Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors. Physical Review B : Condensed matter and materials physics, American Physical Society, 2008, 78 (4), pp.045112. <10.1103/PhysRevB.78.045112>. <hal-00763137>
  • José Alvarez, Frédéric Houzé, Jean-Paul Kleider, M. Liao, Y. Koide. Local photoconductivity on diamond metal-semiconductor-metal photodetectors measured by conducting probe atomic force microscopy. Diamond and Related Materials, Elsevier, 2007, 16, pp.1074-1077. <hal-00320360>
  • M.Y. Liao, José Alvarez, M. Imura, Y. Koide. Submicron metal−semiconductor−metal diamond photodiodes toward improving the responsivity. Applied Physics Letters, American Institute of Physics, 2007, 91, pp.163510. <hal-00322101>
  • M.Y. Liao, Y. Koide, José Alvarez. Single Schottky−barrier photodiode with interdigitated−finger geometry: Application to diamond. Applied Physics Letters, American Institute of Physics, 2007, 90, pp.123507. <hal-00322099>
  • Frédéric Houzé, José Alvarez, Jean-Paul Kleider, P. Bergonzo, E. Snidero, et al.. Local electrical characterization of Schottky diodes on H-terminated diamond surfaces by conducting probe atomic force microscopy. Diamond and Related Materials, Elsevier, 2006, 15, pp.618-621. <hal-00320285>
  • José Alvarez, Frédéric Houzé, Jean-Paul Kleider, M. Liao, Y. Koide. Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy. Superlattices and Microstructures, Elsevier, 2006, 40, pp.343-349. <hal-00320288>
  • Y. Koide, M. Liao, José Alvarez. Thermally stable solar-blind diamond UV detector. Diamond and Related Materials, Elsevier, 2006, 15, pp.1962-1966. <hal-00321747>
  • M. Liao, Y. Koide, José Alvarez. Crystallographic and electrical characterization of tungsten carbide thin films for Schottky contact of diamond photodiode. Journal of Vacuum Science and Technology B, 2006, 24, pp.185-189. <hal-00321748>
  • M. Liao, Y. Koide, José Alvarez. Photovoltaic Schottky ultraviolet detectors fabricated on boron-doped hormoepitaxial diamond layer. Applied Physics Letters, American Institute of Physics, 2006, 88, pp.033504. <hal-00321751>
  • José Alvarez, A. Godard, Jean-Paul Kleider, P. Bergonzo, D. Tromson, et al.. Very high UV-visible selectivity in polycrystalline CVD diamond films. Diamond and Related Materials, Elsevier, 2004, 13, pp.881-885. <hal-00321024>
  • José Alvarez, Alexander Gudovskikh, Jean-Paul Kleider, V. Afanasjev, V.V. Luchinin, et al.. Polycrystalline AlN films deposited at low temperature for selective UV detectors. Sensors and Actuators A: Physical, Elsevier, 2004, 113, pp.355-359. <hal-00321026>
  • José Alvarez, Jean-Paul Kleider, E. Snidero, P. Bergonzo, D. Tromson, et al.. On the metastability of the surface conductivity in hydrogen-terminated polycrystalline CVD diamond. Diamond and Related Materials, Elsevier, 2004, 13, pp.751-754. <hal-00321021>

Communication dans un congrès76 documents

  • Martin Rudolph, D. Stanescu, J Alvarez, E. Foy, Jean-Paul Kleider, et al.. The role of oxygen in magnetron sputtered Ta3N5 films for water photoelectrolysis. E-MRS 2016 Spring Meeting, May 2016, Lille, France. <hal-01363717>
  • Raphaël Lachaume, Martin Foldyna, Gwenaëlle Hamon, Jean Decobert, Romain Cariou, et al.. In-Depth Analysis of III-V/Epi-SiGe Tandem Solar Cell Performance Including Advanced Light Trapping Schemes. Photovoltaic technical conference, May 2016, Marseille, France. 2016, From advanced materials and processes to innovative applications. <http://www.photovoltaic-technical-conference.com/>. <hal-01340588>
  • Gwenaelle Hamon, Romain Cariou, Raphaël Lachaume, Jean Decobert, Kevin Louarn, et al.. Investigation of Hybrid Tunnel Junction Architectures for III-V/Si Tandem Solar Cells. 31st European Photovoltaic Solar Energy Conference and Exhibition (EU-PVSEC 2015), Sep 2015, Hamburg, Germany. pp.75-79, Proceedings of the 31st European Photovoltaic Solar Energy Conference and Exhibition. <10.4229/EUPVSEC20152015-1CO.10.4>. <hal-01232634>
  • Alexandre Jaffré, Hakim Arezki, Mohamed Boutchich, J Alvarez, Jean-Paul Kleider. Coupling on a confocal imaging system µ-Raman, µ-PL, AFM and electrical extensions at a sub micrometric scale. International Workshop on Nanostructure Characterization and Nanomaterials, Aug 2015, Bangkok, Thailand. 2015. <hal-01259190>
  • Raphaël Lachaume, Romain Cariou, Jean Decobert, Martin Foldyna, Gwenaëlle Hamon, et al.. Towards realistic simulation of the novel III-V/epi-Si tandem solar cell concept . Workshop Theory and Modeling for PV, Nov 2015, Marseille, France. <http://www.ipvf.fr/event/workshop-theory-and-modeling-for-pv/>. <hal-01240827>
  • Alexandra Levtchenko, Raphaël Lachaume, Jean-Paul Kleider, José Alvarez, Sana Laribi, et al.. Simulation électrique et optique de nanofils de Silicium en géométrie radiale pour des applications photovoltaïques. Journées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France. <hal-01238536>
  • Alexandre Jaffré, J Alvarez, A Roigé, Jean-Paul Kleider. Introduction à la microscopie confocale et techniques de spectroscopie associées pour la caractérisation de matériaux pour l’électronique et le PV. Journées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France. 2015, <http://jnpv.geeps.centralesupelec.fr/>. <hal-01259200>
  • Ming Xu, Alexandre Jaffré, J Alvarez, Jean-Paul Kleider, Apichat Jittrong, et al.. Spatially resolved photoluminescence on multi stack InAs quantum dots. International Workshop on Nanostructures Characterization and Nanomaterials – Bangkok 2015, Aug 2015, Bangkok, Thailand. <hal-01257898>
  • Hakim Arezki, Mohamed Boutchich, Jean-Paul Kleider, J Alvarez, David Alamarguy, et al.. Work function engineering of doped Trilayer graphene grown on 4H-SiC (0001). ANM2015,6th International Conference on Advanced Nanomaterials, Jul 2015, Aveiro, Portugal. <hal-01257881>
  • Olga Maslova, Raphaël Lachaume, J Alvarez, Jean-Paul Kleider. Interfaces in (p) a-Si:H/(n) c-Si heterojunctions: influence of (i) a-Si:H buffer layer and front electrode on capacitance-temperature dependencies and strong inversion layers. 26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany. <hal-01232109>
  • Jean Decobert, Romain Cariou, Kevin Louarn, Catherine Fortin, Raphaël Lachaume, et al.. SiGe Low Temperature Epitaxy by PECVD on III-V MOVPE Grown Material for High Efficiency Tandem Solar Cell Applications. 16th European Workshop on Metalorganic Vapour Phase Epitaxy, EWMOVPE XVI, Jun 2015, Lund, Sweden. <hal-01232098>
  • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Fethullah Gunes, Ali Madouri, et al.. Electronic properties of CVD Graphene capped with p and n-type doped amorphous silicon. 26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany. <hal-01232115>
  • Raphaël Lachaume, Romain Cariou, Jean Decobert, Martin Foldyna, Gwenaelle Hamon, et al.. Realistic modeling of tandem cells formed by low temperature PECVD epitaxy of silicon-germanium on gallium arsenide. E-MRS Spring Meeting 2015, May 2015, Lille, France. <hal-01232097>
  • Ming Xu, Mohamed Boutchich, Igor Paul Sobkowicz, J Alvarez, Rudolf Brüggemann, et al.. Characterization of a-Si:H/c-Si heterojunction by temperature dependent modulated photoluminescence. 26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany. <hal-01239190>
  • Raphaël Lachaume, Romain Cariou, Jean Decobert, Martin Foldyna, Gwenaelle Hamon, et al.. Realistic simulation of III-V/epi-SiGe tandem solar cells. COST Multiscale solar Workshop, Nov 2015, Valencia, Spain. <hal-01239075>
  • Mohamed Boutchich, Hakim Arezki, David Alamarguy, K.I. Ho, Haikel Sediri, et al.. Doping and characterization of trilayer graphene on 4H-SiC (0001). International Workshop on Nanodevices and Materials, Nov 2014, Tokyo, Japan. <hal-01104494>
  • Mohamed Boutchich, Hakim Arezki, David Alamarguy, K.I. Ho, Sediri Haikel, et al.. Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001). IRAGO 2014, Nov 2014, Tsukuba, Japan. Proceedings of the Irago Conference 2014, pp.7PM-4, 2014. <hal-01104492>
  • Jean-Paul Kleider, José Alvarez, Aurore Brézard-Oudot, Marie-Estelle Gueunier-Farret, Olga Maslova. Revisiting the theory and usage of capacitance techniques: application of high efficiency amorphous/crystalline heterojunction solar cells. E-MRS Spring Meeting 2014, May 2014, Lille, France. Proceedings of the E-MRS Spring Meeting 2014, 2014. <hal-01099589>
  • Timothée Molière, Charles Renard, Alexandre Jaffré, Laetitia Vincent, Daniel Bouchier, et al.. Route toward III-V multispectral solar cells on silicon. E-MRS Spring Meeting 2014, May 2014, Lille, France. Proceedings of the E-MRS Spring Meeting 2014. <hal-01099576>
  • M. Xu, Mohamed Boutchich, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, et al.. TEMPERATURE DEPENDENT PHOTOLUMINESCENCE IN SILICON BASED HETEROJUNCTION SOLAR CELL. EU PVSEC 2014, Sep 2014, Amsterdam, Netherlands. Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition, pp.1214-1217, 2014. <hal-01099586>
  • Arouna Darga, F. Sorin, Christophe Longeaud, Y. Berdnikov, E. Sondergard, et al.. Electronic transport properties of Cu2ZnSn(S,Se)4 thin films obtained from Lift-off process. E-MRS Spring Meeting 2014, May 2014, Lille, France. Proceedings of the E-MRS Spring Meeting 2014, 2014. <hal-01099377>
  • Alexandre Jaffré, José Alvarez, Timothée Molière, Denis Mencaraglia, J. Connolly, et al.. Caractérisations optiques et électriques de cristaux GaAs intégrés sur Si pour la réalisation de cellules solaires multispectrales III-V sur Silicium. JNPV 2013, Dec 2013, Dourdan, France. 2013. <hal-00931328>
  • Ming Xu, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Mohamed Boutchich, et al.. Photoluminescence techniques for heterojunction solar cell characterization. Journées Junior FédESol 2013, Dec 2013, Dourdan, France. 2013. <hal-00931326>
  • Jean-Paul Kleider, Wilfried Favre, Renaud Varache, Olga Maslova, José Alvarez, et al.. Physical insight on silicon heterojunction solar cells from electrical characterization. n-PV Workshop 2013, Apr 2013, Chambéry, France. 2013. <hal-00931320>
  • José Alvarez, Jean-Paul Kleider, Samah Ibrahim. Photoluminescence and electroluminescence characterization of a-Si:H/c-Si interfaces. Erice School 2013 - Nano-Structures For Optics And Photonics, Jul 2013, Erice, Italy. 2013. <hal-00931324>
  • Ming Xu, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Mohamed Boutchich, et al.. Photoluminescence techniques for heterojunction solar cell characterization. JNPV 2013, Dec 2013, Dourdan, France. 2013. <hal-00931327>
  • Olga Maslova, Aurore Brézard-Oudot, Wilfried Favre, D Munoz, Marie-Estelle Gueunier-Farret, et al.. Capacitance spectroscopy of hydrogenated amorphous silicon/crystalline silicon heterojunctions : analytical calculations and experiment. E-MRS 2013 Spring Meeting, May 2013, Strasbourg, France. 2013. <hal-00931314>
  • K. S. Zelentsov, A.S. Gudovskikh, N.A. Kalyuzhnyy, V.M. Lantratov, S.A. Mintairov, et al.. Characterization of the III-V/Ge interface by capacitance measurements for III-V multijunction solar cells development. E-MRS Spring Meeting 2013, May 2013, Strasbourg, France. 2013. <hal-00931315>
  • F. Proise, F. Pardo, A. Delamarre, A.-L. Joudrier, C. Njel, et al.. InP based photovoltaic nano-cell. E-MRS Spring Meeting 2013, May 2013, Strasbourg, France. 2013. <hal-00931317>
  • Olga Maslova, Aurore Brézard-Oudot, Marie-Estelle Gueunier-Farret, José Alvarez, Wilfried Favre, et al.. Temperature and Bias Dependence of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterojunction Capacitance: The Link to Band Bending and Band Offsets. ICANS 25, Aug 2013, Toronto, Canada. 2013. <hal-00931318>
  • José Alvarez, Alexandre Jaffré, Charles Renard, N. Cherkasin, Timothée Molière, et al.. Structural, optoelectronic and electrical properties of GaAs microcrystals grown from (001) Si nano-areas. Erice School 2013 - Nano-Structures For Optics And Photonics, Jul 2013, Erice, Italy. 2013. <hal-00931323>
  • Charles Renard, N. Cherkasin, Alexandre Jaffré, Timothée Molière, Laetitia Vincent, et al.. Growth route toward III-V multispectral solar cells on silicon. EUPVSEC 2013, Sep 2013, Paris, France. pp.344-348, 2013. <hal-00931338>
  • Charles Renard, Timothée Molière, Alexandre Jaffré, Laetitia Vincent, Patrick Boucher, et al.. III-V multispectral solar cells on silicon. E-MRS Spring Meeting 2013, May 2013, Strasbourg, France. 2013. <hal-00931316>
  • Wilfried Favre, Renaud Varache, José Alvarez, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Characterization and modeling of heterojunction solar cells. IWTFSSC 4, Mar 2012, Neuchâtel, Switzerland. 2012. <hal-00778998>
  • Olga Maslova, Aurore Brézard-Oudot, Wilfried Favre, José Alvarez, A.S. Gudovskikh, et al.. Caracterisation de l'interface (p) a-Si :H/(n) c-Si par spectroscopie de capacite : modelisation et resultats experimentaux. JNPV 2012, Dec 2012, Chantilly, France. 2012. <hal-00779018>
  • Mohamed Boutchich, Alexandre Jaffré, David Alamarguy, José Alvarez, A. Barras, et al.. Graphene oxide reduced through chemical and biological processes. Irago Conference 2012, Nov 2012, Aichi, Japan. 2012. <hal-00779022>
  • José Alvarez, Mohamed Boutchich, Djicknoum Diouf, Jean-Paul Kleider, M. Liao, et al.. Ultraviolet photodetectors based on hydrogenated/oxidized diamond surfaces characterization of silicon heterojunctions for solar cells. IUMRS-ICEM 2012, Mar 2012, Yokohama, Japan. 2012. <hal-00779008>
  • Jean-Paul Kleider, Wilfried Favre, Renaud Varache, Olga Maslova, José Alvarez, et al.. Heterojunctions on n-type c-Si: determination of interface parameters from electrical techniques. nPV Workshop 2012, May 2012, Amsterdam, Netherlands. 2012. <hal-00779010>
  • Irène Ngo, Marie-Estelle Gueunier-Farret, José Alvarez, Jean-Paul Kleider. Modeling of c-Si/a-Si:H nanowires based solar cells. 12th Euregional Workshop on Novel Concepts for Future Thin-Film Silicon Solar Cells, Jan 2012, Delft, Netherlands. <hal-00779014>
  • Jean-Paul Kleider, Renaud Varache, Wilfried Favre, Olga Maslova, José Alvarez, et al.. Electrical characterization and modeling of the amorphous/crystalline silicon interface. E-MRS 2012 Spring Meeting, May 2012, Strasbourg, France. 2012. <hal-00778999>
  • Arouna Darga, José Alvarez, Christophe Longeaud, Jean-Paul Kleider, Fabien Sorin, et al.. Etude des propriétés du transport électroniques dans les cellules à base de Cu2ZnSn(S, Se)4 (CZTSSe). JNPV 2012, Dec 2012, Chantilly, France. 2012. <hal-00779016>
  • José Alvarez. Systeme d'imagerie confocale couplant micro-Raman, micro-PL et AFM. JNPV 2012, Dec 2012, Chantilly, France. 2012. <hal-00779017>
  • Wilfried Favre, Laroussi Bettaieb, J. Després, José Alvarez, Jean-Paul Kleider, et al.. Coil-to-sample distance influence on contactless QSSPC effective lifetime measurements : application to silicon wafers passivated by thin amorphous layers. 26th EU PVSEC, Sep 2011, Hambourg, Germany. 2011. <hal-00710780>
  • Samah Ibrahim, José Alvarez, Jean-Paul Kleider. Photoluminescence Spectrum in Silicon Measured by Confocal and Nonconfocal Systems. Journées Nationales PhotoVoltaïques 2011, Dec 2011, Dourdan, France. <hal-00710791>
  • Djicknoum Diouf, Jean-Paul Kleider, Irène Ngo, Marie-Estelle Gueunier-Farret, José Alvarez. Nanowire solar cells using hydrogenated amorphus silicon : a modeling study. Journées Nationales PhotoVoltaïques 2011, Dec 2011, Dourdan, France. <hal-00710792>
  • B. Caylar, M. Pomorski, José Alvarez, Jean-Paul Kleider, A. Oh, et al.. Novel 3D micro-structuring of diamond for radiation detector applications: enhanced performances evaluated under particle and photon beams. Diamond 2011, Sep 2011, Garmisch-Partenkirchen, Germany. 2011. <hal-00710785>
  • Olga Maslova, Marie-Estelle Gueunier-Farret, José Alvarez, A.S. Gudovskikh, E.I Terukov, et al.. Space charge capacitance spectroscopy in amorphous silicon Schottky diodes: theory, modeling, and experiments. ICANS24, Aug 2011, Nara, Japan. 2011. <hal-00710774>
  • Mohamed Boutchich, José Alvarez, Djicknoum Diouf, Pere Roca I Cabarrocas, M Liao, et al.. Amorphous and microcrystalline silicon diamond based heterojunctions. ICANS24, Aug 2011, Nara, Japan. 2011. <hal-00710772>
  • Peiqing Yu, Anne Migan-Dubois, José Alvarez, Arouna Darga, Denis Mencaraglia, et al.. Study of Traps in P3HT:PCBM based Organic Solar Cells Using Fractional Thermally Stimulated Current Technique. ICANS24, Aug 2011, Nara, Japan. 2011. <hal-00710759>
  • Irène Ngo, Marie-Estelle Gueunier-Farret, José Alvarez, Jean-Paul Kleider. Modelling of c-Si/a-Si:H nanowire solar cells: some key parameters to optimize the photovoltaic performance. E-MRS Spring Meeting 2011, May 2011, Nice, France. 2011. <hal-00710770>
  • Djicknoum Diouf, Jean-Paul Kleider, Irène Ngo, Marie-Estelle Gueunier-Farret, José Alvarez. Nanowire solar cells using hydrogenated amorphous silicon: a modeling study. E-MRS Fall Meeting 2011, Sep 2011, Varsovie, Poland. 2011. <hal-00710777>
  • José Alvarez, Jean-Paul Kleider, Pere Roca I Cabarrocas. Electrical properties of µc-Si:H by conductive-probe AFM. E-MRS Fall Meeting 2011, Sep 2011, Varsovie, Poland. 2011. <hal-00710778>
  • Olga Maslova, Aurore Brézard, Wilfried Favre, José Alvarez, A.S. Gudovskikh, et al.. Characterization of the a-Si:H/c-Si interface by capacitance spectroscopy measurements: modeling and experiments. E-MRS Fall Meeting 2011, Sep 2011, Varsovie, Poland. 2011. <hal-00710779>
  • Morgane Fruzzetti, José Alvarez, Irène Ngo, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, et al.. Conductive-atomic force microscopy and Raman spectroscopy characterization of silicon nanowires. Journées Nationales PhotoVoltaïques 2011, Dec 2011, Dourdan, France. <hal-00710790>
  • José Alvarez, Irène Ngo, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Simon Perraud. Electrical characterization of phosphorus doped silicon nanowires. MRS Spring Meeting, Apr 2010, San Francisco, United States. 2010. <hal-00555247>
  • Y. Koide, M. Liao, M. Imura, José Alvarez, Jean-Paul Kleider. Diamond UV detectors and sensing mechanism. Hasselt Diamond Workshop SBDD XV, Feb 2010, Hasselt, Belgium. 2010. <hal-00555255>
  • Irène Ngo, B. O\'Donnell, José Alvarez, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, et al.. Catalyst formation and growth of Sn- and In-catalyzed silicon nanowires. MRS Spring Meeting, Apr 2010, San Francisco, United States. 2010. <hal-00555252>
  • Jean-Paul Kleider, José Alvarez, A.V. Ankudinov, A.S. Gudovskikh, E.V. Gushina, et al.. Characterization of silicon heterojunctions for solar cells. E-MRS 2010 Fall Meeting, 2010, Varsovie, Poland. 2010. <hal-00555254>
  • José Alvarez, Irène Ngo, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Lianbo Yu, et al.. Conductive-atomic force microscopy characterization of silicon nanowires. E-MRS 2010 Fall Meeting, Sep 2010, Varsovie, Poland. 2010. <hal-00555251>
  • José Alvarez, Jean-Paul Kleider, M. Liao, M. Imura, Y. Koide. Ultraviolet photodetectors based on hydrogenated diamond surfaces treated by UV-Ozone. NIMS-AIST Workshop, 2009, Tsukuba, Japan. 2009. <hal-00446007>
  • José Alvarez, Jean-Paul Kleider, M. Liao, Y. Koide, M. Imura. Les recherches sur le diamant au LGEP : amélioration des performances de détection dans l'UV. Journées du GDR "DIAMANT", Oct 2008, Gif Sur Yvette, France. <hal-00354471>
  • José Alvarez, M.Y. Liao, Y. Koide, M. Imura, Jean-Paul Kleider. Ultra-violet detectors based on hydrogenated diamond surfaces treated by ozone. XI International Conference on Dielectrics, Jun 2008, St Petersbourg, Russia. 2008. <hal-00354207>
  • José Alvarez, Jean-Paul Kleider, M.Y. Liao, Y. Koide. High UV photocurrent on hydrogenated Ib diamond (100) substrates. First International Conference on New Diamond and Nano Carbons, NDNC 2007, 2007, Japan. <hal-00322296>
  • Y. Koide, M.Y. Liao, José Alvarez. Comparison of photoresponse properties for p−diamond deep−ultraviolet photodetectors with various device structures. The 18th European Conference on Diamond, Diamond−Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide, 2007, Germany. <hal-00322316>
  • José Alvarez. Développement et caractérisation de dispositifs diamant pour la détection UV. Colloque national sur le diamant : Matériau et Physique : du Carbone Vers le Diamant, 2007, France. <hal-00322266>
  • M.Y. Liao, José Alvarez, Y. Koide. Single Schottky−barrier diamond photodiode with interdigitated electrodes. The First International Conference on New Diamond and Nano Carbons (NDNC2007), 2007, Japan. <hal-00322294>
  • M.Y. Liao, José Alvarez, Y. Koide. High responsitivity submicron metal−semiconductor−metal deep ultraviolet diamond detector. International Conference on Nanoscience & Technology (ChinaNANO 2007), 2007, China. <hal-00322292>
  • José Alvarez, Frédéric Houzé, Jean-Paul Kleider, M. Liao, Y. Koide. Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy. E-MRS 2006, 2006, France. 2006. <hal-00320298>
  • José Alvarez, Jean-Paul Kleider, Frédéric Houzé, Pascal Chrétien, M. Liao, et al.. Mesures locales de photoconductivité par AFM à pointe conductrice sur des dispositifs métal-semiconducteur-métal à base de diamant. Réunion Annuelle VEECO des Utilisateurs d'AFM, 2006, France. 2006. <hal-00320320>
  • José Alvarez. Local electrical and photoelectrical characterizations of diamond electronic devices by conducting probe atomic force microscopy. National Institute of Materials Science, 2006, Japan. <hal-00321893>
  • José Alvarez, Jean-Paul Kleider, Frédéric Houzé, M. Liao, Y. Koide. Local photoconductivity on diamond metal-semiconductor-metal photodetectors measured byconducting probe atomic force microscopy. 17th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide, Diamond 2006, 2006, Portugal. <hal-00321918>
  • Y. Koide, M. Liao, José Alvarez. Thermally stable solar-blind diamond UV-detectors. International Conference of New Diamond Science and Technology (ICNDST) and Advanced Diamond Conference (ADC) 2006 Joint Conference, 2006, United States. <hal-00321897>
  • José Alvarez, Frédéric Houzé, Pascal Chrétien, Jean-Paul Kleider, C. Bazin, et al.. Local photoconductivity on Schottky diamond photodetectors measured by conducting probe atomic force microscopy. Diamond' 2006 (17th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides), 2006, Portugal. 2006. <hal-00320301>
  • Frédéric Houzé, José Alvarez, Jean-Paul Kleider, P. Bergonzo, E. Snidero, et al.. Local electrical characterization of Schottky diodes on H-terminated diamond surfaces by conducting probe atomic force microscopy. Diamond' 2005 (16th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides), 2005, France. 2005. <hal-00320238>
  • Frédéric Houzé, José Alvarez, Jean-Paul Kleider, P. Bergonzo, E. Snidero, et al.. Local electrical characterization of Schottky diodes on H-terminated diamond surfaces by conducting probe atomic force microscopy. Diamond 2005, 2005, France. <hal-00321705>
  • Frédéric Houzé, José Alvarez, Jean-Paul Kleider, P. Bergonzo, E. Snidero, et al.. Local electrical characterization of Schottky diodes on H-terminated diamond surfaces by conducting probe atomic force microscopy. Diamond 2005, 2005, France. <hal-00321568>

Poster13 documents

  • Gwenaëlle Hamon, Jean Decobert, N. Vaissiere, Raphaël Lachaume, Romain Cariou, et al.. Direct growth of crystalline Silicon on GaAs by Low Temperature PECVD: toward hybrid tunnel junctions for III-V/Si tandem cells. 43rd IEEE PV Specialists Conference, Jun 2016, Portland, United States. <hal-01363728>
  • Raphaël Lachaume, Martin Foldyna, Gwenaëlle Hamon, Jean Decobert, Romain Cariou, et al.. In-Depth Analysis of III-V/Epi-SiGe Tandem Solar Cell Performance Including Advanced Light Trapping Schemes. Photovoltaic Technical Conference, PVTC 2016, May 2016, Marseille, France. <hal-01363733>
  • David Reaux, J Alvarez, Jean-Paul Kleider. Analysis of the recombination in a-Si:H/c-Si heterojunctions including the Defect-Pool model. SiliconPV 2016, Mar 2016, Chambéry, France. <hal-01395736>
  • Alexander Korovin, J Alvarez, Jean-Paul Kleider. Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells. SiliconPV 2016, Mar 2016, Chambéry, France. <hal-01395733>
  • David Reaux, J Alvarez, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Impact of defect-pool model parameters on the lifetime in c-Si/a-Si:H heterojunction solar cells. 5th International Conference on Silicon Photovoltaics, Silicon PV, Mar 2015, Konstanz, Germany. <hal-01232099>
  • A. Roigé, Alexandre Jaffré, José Alvarez, Isidro Martin, R. Alcubilla, et al.. Degradation of surface passivation at the surroundings of laser processed regions in c-Si solar cells studied by micro-photoluminescence. Journées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France. <hal-01238541>
  • David Reaux, José Alvarez, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Modélisation de la densité de défauts de surface des heterojunctions c-Si/a-Si:H en utilisant le modèle du Defect-Pool. Journées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France. <hal-01238539>
  • Paul Narchi, José Alvarez, Pascal Chrétien, Gennaro Picardi, Romain Cariou, et al.. Cross-sectional investigations on epitaxial silicon solar cells by Kelvin and Conducting Probe Atomic Force Microscopy: Effect of illumination. Journées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France. <hal-01238543>
  • Fethullah Gunes, David Alamarguy, Hakim Arezki, Alexandre Jaffré, José Alvarez, et al.. Nitric Acid doping of epitaxial graphene on SiC (0001) substrate. Graphene 2014, May 2014, Toulouse, France. Proceedings of the 4th edition of Graphene Conference. <hal-01104503>
  • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Fethullah Gunes, Ali Madouri, et al.. Engineering of CVD graphene optoelectronic properties Application as transparent electrode in solar cells. CMD25-JMC14, Aug 2014, Paris, France. <hal-01104502>
  • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Fethullah Gunes, José Alvarez, et al.. Role of Anions in the AuCl3-Doping Trilayers N-doped Graphene on 4H-SiC (0001). IRAGO 2014, Nov 2014, Tsukuba, Japan. pp.7P8. <hal-01104496>
  • M. Xu, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Mohamed Boutchich, et al.. Photoluminescence techniques for heterojunction solar cell characterization. JNPV 2014, Dec 2014, Dourdan, France. Actes des Journées Nationales du PhotoVoltaïque. <hal-01099349>
  • Ming Xu, Alexandre Jaffré, José Alvarez, Jean-Paul Kleider, Apichat Jittrong, et al.. Spatially resolved photoluminescence on multi stack InAs quantum dots. IRAGO 2014, Nov 2014, Tsukuba, Japan. pp.7P2. <hal-01104500>

Brevet1 document

  • José Alvarez, Jean-Paul Kleider, M.Y. Liao, Y. Koide. Planar UV diamond detectors based on hydrogenation and subsequent ozone treatments. Patent n° : JP2008 027232. 2008. <hal-00354237>

Autre publication1 document

  • José Alvarez. Caractérisation électronique de films minces de diamant. Thèse. 2004. <hal-00321107>