Accéder directement au contenu

Jonathan Houard

8
Documents
Identifiants chercheurs
  • IdHAL jonathan-houard
  • ResearcherId : B-9398-2014
  • ORCID 0000-0001-7244-205X
  • Google Scholar : https://scholar.google.fr/citations?hl=fr&user=r7-0DuUAAAAJ&view_op=list_works
  • IdRef : 156842998
  • ResearcherId : http://www.researcherid.com/rid/B-9398-2014

Présentation

Publications

williams-lefebvre
Image document

Surface Microscopy of Atomic and Molecular Hydrogen from Field-Evaporating Semiconductors

Lorenzo Rigutti , Enrico Di Russo , Florian Chabanais , Ivan Blum , Jonathan Houard
Journal of Physical Chemistry C, 2021, 125 (31), pp.17078-17087. ⟨10.1021/acs.jpcc.1c04778⟩
Article dans une revue hal-03448318v1

Carrier Localization in GaN/AlN Quantum Dots As Revealed by Three-Dimensional Multimicroscopy

Lorenzo Mancini , Florian Moyon , David Hernàndez-Maldonado , Ivan Blum , Jonathan Houard
Nano Letters, 2017, 17 (7), pp.4261 - 4269. ⟨10.1021/acs.nanolett.7b01189⟩
Article dans une revue hal-01765951v1

Three-dimensional atomic-scale investigation of ZnO-Mg x Zn 1−x O m-plane heterostructures

Enrico Di Russo , L. Mancini , F. Moyon , Simona Moldovan , Jonathan Houard
Applied Physics Letters, 2017, 111 (3), pp.032108. ⟨10.1063/1.4994659⟩
Article dans une revue hal-01766135v1

Multi-excitonic emission from Stranski-Krastanov GaN/AlN quantum dots inside a nanoscale tip

L. Mancini , F. Moyon , Jonathan Houard , Ivan Blum , Williams Lefebvre
Applied Physics Letters, 2017, 111 (24), ⟨10.1063/1.5004417⟩
Article dans une revue hal-01766091v1

Multi-Microscopy Study of the Influence of Stacking Faults and Three-Dimensional In Distribution on the Optical Properties of m-Plane InGaN Quantum Wells Grown on Microwire Sidewalls

L. Mancini , Daniel Hernandez Maldonado , Williams Lefebvre , Jonathan Houard , Ivan Blum
Applied Physics Letters, 2016, 108 (4), pp.042102. ⟨10.1063/1.4940748⟩
Article dans une revue hal-01954240v1

Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers

Lorenzo Rigutti , L. Mancini , Williams Lefebvre , Jonathan Houard , Daniel Hernandez Maldonado
Semiconductor Science and Technology, 2016, 31 (9), pp.095009. ⟨10.1088/0268-1242/31/9/095009⟩
Article dans une revue hal-01928848v1

Tracking the path of dislocations across ordered Al3Zr nano-precipitates in three dimensions

Williams Lefebvre , N. Masquelier , Jonathan Houard , Renaud Patte , Helena Zapolsky
Scripta Materialia, 2014, 70, pp.43-46. ⟨10.1016/j.scriptamat.2013.09.014⟩
Article dans une revue hal-02109343v1

Correlation of Microphotoluminescence Spectroscopy, Scanning Transmission Electron Microscopy, and Atom Probe Tomography on a Single Nano-object Containing an InGaN/GaN Multiquantum Well System

Lorenzo Rigutti , Ivan Blum , Deodatta Shinde , David Hernandez-Maldonado , Williams Lefebvre
Nano Letters, 2014, 14 (1), pp.107-114. ⟨10.1021/nl4034768⟩
Article dans une revue hal-01986734v1