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UV-A to UV-B electroluminescence of core-shell GaN/AlGaN wire heterostructures

Vincent Grenier , Sylvain Finot , Lucie Valera , Joël Eymery , Gwénolé Jacopin , et al.
Applied Physics Letters, 2022, 121 (13), pp.131102. ⟨10.1063/5.0101591⟩
Article dans une revue cea-03795143v1

Spatially and time-resolved carrier dynamics in core–shell InGaN/GaN multiple-quantum wells on GaN wire

Jaime Segura-Ruiz , Damien Salomon , Andrei Rogalev , J. Eymery , Benito Alén , et al.
Nano Letters, 2021, 21 (22), pp.9494-9501. ⟨10.1021/acs.nanolett.1c02760⟩
Article dans une revue hal-03475371v1
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X-ray Coherent Scattering on GaP/Si for III-V Monolithic Integration on Silicon

Yanping Wang , Antoine Létoublon , Ida Lucci , Charles Cornet , V. Favre-Nicolin , et al.
International Workshop on Phase Retrieval and Coherent Scattering (COHERENCE 2016), Jun 2016, Saint-Malo, France. 2016
Poster de conférence hal-01496666v1

Ordering of Ge quantum dots with buried Si dislocation networks

F. Leroy , J. Eymery , P. Gentile , F. Fournel
Applied Physics Letters, 2002, 80 (17), pp.3078-3080
Article dans une revue cea-01989695v1

Correlation of Microphotoluminescence Spectroscopy, Scanning Transmission Electron Microscopy, and Atom Probe Tomography on a Single Nano-object Containing an InGaN/GaN Multiquantum Well System

Lorenzo Rigutti , Ivan Blum , Deodatta Shinde , David Hernandez-Maldonado , Williams Lefebvre , et al.
Nano Letters, 2014, 14 (1), pp.107-114. ⟨10.1021/nl4034768⟩
Article dans une revue hal-01986734v1

STM study of ultra-thin (<2 nm) silicon oxide

P. Gentile , J. Eymery , F. Gustavo , P. Mur , J.M. Hartmann , et al.
Journal of Non-Crystalline Solids, 2003, 322 (1-3), pp.174 - 178. ⟨10.1016/S0022-3093(03)00198-4⟩
Article dans une revue istex hal-01876870v1

Controlled Ge quantum dots positioning with nano-patterned Si(001) substrates

A. Bavard , J. Eymery , A. Pascale , F. Fournel
physica status solidi (b), 2006, 243 (15), pp.3963 - 3967. ⟨10.1002/pssb.200671533⟩
Article dans une revue istex hal-01875054v1

Nanometric artificial structuring of semiconductor surfaces for crystalline growth

J. Eymery , G. Biasiol , E. Kapon , T. Ogino
Comptes Rendus. Physique, 2005, 6 (1), pp.105 - 116. ⟨10.1016/j.crhy.2004.11.006⟩
Article dans une revue istex hal-01875065v1
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Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates

Xiao Jun Chen , Guillaume Perillat-Merceroz , Diane Sam-Giao , Christophe Durand , Joël Eymery
Applied Physics Letters, 2010, 97 (15), pp.151909. ⟨10.1063/1.3497078⟩
Article dans une revue hal-00601864v1

Self-assembled growth of catalyst-free GaN wires by metal-organic vapour phase epitaxy

R. Koester , Jun-Seok Hwang , C. Durand , Daniel Le-Si Dang , J. Eymery
Nanotechnology, 2010, 21 (1), pp.015602. ⟨10.1088/0957-4484/21/1/015602⟩
Article dans une revue istex hal-00999293v1

Ion-implantation induced phase transitions: Order-disorder and amorphous-crystal transformations (CEMS studies)

A. Fnidiki , D. Bodin , J. Eymery
Hyperfine Interactions, 1986, 29 (1-4), pp.1179-1182. ⟨10.1007/BF02399444⟩
Article dans une revue istex hal-03144688v1
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Au-Ni solid solutions studied by numerical relaxation

J. Eymery , F. Lançon , L. Billard
Journal de Physique I, 1993, 3 (3), pp.787-802. ⟨10.1051/jp1:1993163⟩
Article dans une revue istex jpa-00246758v1
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Structural and magnetic characterization of Co/Au(100) epitaxial multilayers

A. Chamberod , B. Dieny , J. Eymery , B. Gilles , J. Hartmann , et al.
Journal de Physique IV Proceedings, 1992, 02 (C3), pp.C3-245-C3-249. ⟨10.1051/jp4:1992337⟩
Article dans une revue istex jpa-00251542v1

Charge Collection Efficiency of Single GaN Core–Shell Wires Assessed by High-Precision Ion-Beam-Induced Charge Measurements

Dirkjan Verheij , Milan Vićentijević , Milko Jakšić , Marco Peres , Luís Cerqueira Alves , et al.
ACS Applied Electronic Materials, 2024, ⟨10.1021/acsaelm.3c01584⟩
Article dans une revue hal-04476034v1

Ge quantum dots growth on nanopatterned Si(001) surface: Morphology and stress relaxation study

A. Pascale , P. Gentile , J. Eymery , J. Meziere , A. Bavard , et al.
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2006, 600 (16), pp.3187 - 3193. ⟨10.1016/j.susc.2006.06.004⟩
Article dans une revue istex hal-01876867v1

Comprehensive analyses of core–shell InGaN/GaN single nanowire photodiodes

H. Zhang , N Guan , V Piazza , A Kapoor , C. Bougerol , et al.
Journal of Physics D: Applied Physics, 2017, 50 (48), pp.484001. ⟨10.1088/1361-6463/aa935d⟩
Article dans une revue hal-01640099v1

Nitride nanowire light emitting diodes

Maria Tchernycheva , Xing Dai , Agnes Messanvi , Hezhi Zhang , Vladimir Neplokh , et al.
2015 17th International Conference on Transparent Optical Networks (ICTON), Jul 2015, Budapest, France. pp.1-4
Communication dans un congrès hal-02177767v1

InGaN/GaN nanowire flexible light emitting diodes and photodetectors

Nan Guan , Xing Dai , Hezhi Zhang , Lorenzo Mancini , Akanksha Kapoor , et al.
2017 19th International Conference on Transparent Optical Networks (ICTON), Jul 2017, Girona, Spain. ⟨10.1109/ICTON.2017.8024808⟩
Communication dans un congrès hal-01986706v1

Extended synchrotron X-ray reflectivity study of a Sm-based layer buried into CdTe(001)

N. Boudet , J. Eymery , G. Renaud , J.L. Rouvière , J.Y. Veuillen , et al.
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 1995, 327 (3), pp.L515 - L520. ⟨10.1016/0039-6028(95)00034-8⟩
Article dans une revue istex hal-01875058v1

Radiation sensors based on GaN microwires

D Verheij , M. Peres , S Cardoso , L Alves , E. Alves , et al.
Journal of Physics D: Applied Physics, 2018, 51 (17), pp.175105. ⟨10.1088/1361-6463/aab636⟩
Article dans une revue hal-01986659v1

Crystallographic orientation of facets and planar defects in functional nanostructures elucidated by nano-focused coherent diffractive X-ray imaging

Marie-Ingrid Richard , Sara Fernandez , J. Eymery , Jan Philipp Hofmann , Lu Gao , et al.
Nanoscale, 2018, 10 (10), pp.4833-4840. ⟨10.1039/C7NR07990G⟩
Article dans une revue hal-01986662v1

Thermal Evolution of Implantation Damages in Mg-Implanted GaN Layers Grown on Si

Aurélien Lardeau-Falcy , Marianne Coig , Matthew Charles , Christophe Licitra , Joël Kanyandekwe , et al.
ECS Transactions, 2017, 80 (7), pp.131-138. ⟨10.1149/08007.0131ecst⟩
Article dans une revue hal-01986707v1
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Electronic and optical properties of Si ∕ Si O 2 nanostructures. I. Electron-hole collective processes in single Si ∕ Si O 2 quantum wells

N. Pauc , V. Calvo , J. Eymery , F. Fournel , N. Magnea
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 72 (20), ⟨10.1103/PhysRevB.72.205324⟩
Article dans une revue hal-02060353v1

Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy

X.J. Chen , Bruno Gayral , Diane Sam-Giao , Catherine Bougerol , Christophe Durand , et al.
Applied Physics Letters, 2011, 99, pp.251910. ⟨10.1063/1.3671365⟩
Article dans une revue hal-00788831v1

Photoluminescence of nanometric single silicon quantum wells

J. Eymery , N. Pauc , V. Calvo , F. Fournel , N. Magnea
Optical Materials, 2005, 27 (5), pp.1000 - 1003. ⟨10.1016/j.optmat.2004.08.052⟩
Article dans une revue istex hal-01875076v1

Self-organized and self-catalyst growth of semiconductor and metal wires by vapour phase epitaxy: GaN rods versus Cu whiskers

J. Eymery , Xiaojun Chen , Christophe Durand , Matthias Kolb , Günther H.S. Richter
Comptes Rendus. Physique, 2013, 14 (2-3), pp.221 - 227. ⟨10.1016/j.crhy.2012.10.009⟩
Article dans une revue hal-01875066v1

Ultra thin silicon films directly bonded onto silicon wafers

F. Fournel , H. Moriceau , N. Magnea , J. Eymery , J.L Rouvière , et al.
Materials Science and Engineering: B, 2000, 73 (1-3), pp.42 - 46. ⟨10.1016/S0921-5107(99)00431-6⟩
Article dans une revue istex hal-01876883v1

Un Calcul Simple des Deux Premiers Moments de la Distribution de Dopants Implantés a Basse Énergie

J. Eymery , A Fnidiki
EPL - Europhysics Letters, 1987, 4 (2), pp.223-231. ⟨10.1209/0295-5075/4/2/015⟩
Article dans une revue istex hal-03144691v1
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Towards simulation at picometer-scale resolution: Revisiting inversion domain boundaries in GaN

Frédéric Lançon , Luigi Genovese , J. Eymery
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 98 (16), pp.165306. ⟨10.1103/PhysRevB.98.165306⟩
Article dans une revue hal-01986656v1
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Dual‐color emission from monolithic m‐plane core‐shell InGaN/GaN quantum wells

Akanksha Kapoor , Vincent Grenier , Eric Robin , Catherine Bougerol , Gwenolé Jacopin , et al.
Advanced Photonics Research, 2021, 2, pp.2000148. ⟨10.1002/adpr.202000148⟩
Article dans une revue cea-03138764v1