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Number of documents

52

Jérôme Saint Martin, Univ Paris Saclay,


Journal articles35 documents

  • B. Davier, P. Dollfus, N.D. Le, S. Volz, J. Shiomi, et al.. Revisiting thermal conductivity and interface conductance at the nanoscale. International Journal of Heat and Mass Transfer, Elsevier, 2022, 183, Part A, pp.122056. ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩. ⟨hal-03628712⟩
  • Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus. Electron transport properties of graphene nanoribbons with Gaussian deformation. Physical Review B, American Physical Society, 2020, 102 (7), ⟨10.1103/PhysRevB.102.075425⟩. ⟨hal-02935227⟩
  • Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus, Sebastian Volz. High thermoelectric and electronic performance in graphene nanoribbons by isotope and vacancy engineering. Materials Today: Proceedings, Elsevier, 2018, 4 (4, Part 1), pp.10393-10400. ⟨10.1016/j.matpr.2017.12.287⟩. ⟨hal-01927617⟩
  • Laurent Chaput, Jérôme Larroque, Philippe Dollfus, Jérôme Saint-Martin, David Lacroix. Ab initio based calculations of the thermal conductivity at the micron scale. Applied Physics Letters, American Institute of Physics, 2018, 112 (3), pp.033104. ⟨10.1063/1.5010959⟩. ⟨hal-01689364⟩
  • Jérôme Larroque, Philippe Dollfus, Jérôme Saint-Martin. Phonon transmission at Si/Ge and polytypic Ge interfaces using full-band mismatch based models. Journal of Applied Physics, American Institute of Physics, 2018, 123 (2), ⟨10.1063/1.5007034⟩. ⟨hal-01906686⟩
  • Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus, Sebastian Volz. High thermoelectric performance of graphite nanofibers. Nanoscale, Royal Society of Chemistry, 2018, 10 (8), pp.3784 - 3791. ⟨10.1039/C7NR07817J⟩. ⟨hal-01909447⟩
  • Brice Davier, Jérôme Larroque, Philippe Dollfus, Laurent Chaput, Sebastian Volz, et al.. Heat transfer in rough nanofilms and nanowires using Full Band Ab Initio Monte Carlo simulation. Journal of Physics: Condensed Matter, IOP Publishing, In press, 30 (49), pp.495902. ⟨10.1088/1361-648X/aaea4f⟩. ⟨hal-01906247⟩
  • Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus, Sebastian Volz. Optimizing the thermoelectric performance of graphene nano-ribbons without degrading the electronic properties. Scientific Reports, Nature Publishing Group, 2017, 7 (1), ⟨10.1038/s41598-017-02230-0⟩. ⟨hal-01631292⟩
  • Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus, Sebastian Volz. Third nearest neighbor parameterized tight binding model for graphene nano-ribbons. AIP Advances, American Institute of Physics- AIP Publishing LLC, 2017, 7 (7), ⟨10.1063/1.4994771⟩. ⟨hal-01631290⟩
  • Vincent Talbo, Jérôme Saint-Martin, Sylvie Galdin-Retailleau, Philippe Dollfus. Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors. Scientific Reports, Nature Publishing Group, 2017, 7 (1), ⟨10.1038/s41598-017-14009-4⟩. ⟨hal-01906689⟩
  • T. Nghiem, Jérôme Saint-Martin, P. Dollfus. Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons. Journal of Computational Electronics, Springer Verlag, 2016, 15 (1), pp.3 - 15. ⟨10.1007/s10825-015-0773-2⟩. ⟨hal-01906694⟩
  • V Hung Nguyen, Huy-Viet Nguyen, Jérôme Saint-Martin, P. Dollfus. Strain-induced conduction gap in vertical devices made of misoriented graphene layers. Nanotechnology, Institute of Physics, 2015, 26 (11), ⟨10.1088/0957-4484/26/11/115201⟩. ⟨hal-01909504⟩
  • Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus. Dispersive hybrid states and bandgap in zigzag graphene/BN heterostructures. Semiconductor Science and Technology, IOP Publishing, 2015, 30 (10), ⟨10.1088/0268-1242/30/10/105002⟩. ⟨hal-01909498⟩
  • M. Chung Nguyen, V. Hung Nguyen, Huy-Viet Nguyen, Jérôme Saint-Martin, P. Dollfus. Enhanced Seebeck effect in graphene devices by strain and doping engineering. Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2015, 73, pp.207 - 212. ⟨10.1016/j.physe.2015.05.020⟩. ⟨hal-01909501⟩
  • Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus. High thermoelectric performance in graphene nanoribbons by graphene/BN interface engineering. Nanotechnology, Institute of Physics, 2015, 26 (49), ⟨10.1088/0957-4484/26/49/495202⟩. ⟨hal-01909496⟩
  • Philippe Dollfus, Viet Hung Nguyen, Jérôme Saint-Martin. Thermoelectric effects in graphene nanostructures. Journal of Physics: Condensed Matter, IOP Publishing, 2015, 27 (13), ⟨10.1088/0953-8984/27/13/133204⟩. ⟨hal-01909508⟩
  • Viet-Hung Nguyen, Mai Chung Nguyen, Huy-Viet Nguyen, Jérôme Saint-Martin, Philippe Dollfus. Enhanced thermoelectric figure of merit in vertical graphene junctions. Applied Physics Letters, American Institute of Physics, 2014, 105 (13), ⟨10.1063/1.4896915⟩. ⟨hal-01910202⟩
  • Natalia Bazoge, J. Saint-Martin. Entre utopie et réalités professionnelles, la Gymnastique Volontaire (GV) en France (1976-1985). Carrefours de l'éducation, Armand Colin, 2014, Hors-série « Education nationale – Jeunesse et Sports. Territoires en conflits ? », 3, pp.57-74. ⟨hal-02063803⟩
  • T. Thu Trang Nghiêm, Jérôme Saint-Martin, P. Dollfus. New insights into self-heating in double-gate transistors by solving Boltzmann transport equations. Journal of Applied Physics, American Institute of Physics, 2014, 116 (7), ⟨10.1063/1.4893646⟩. ⟨hal-01906713⟩
  • Viet Hung Nguyen, Alfonso Alarcón, Salim Berrada, Van Nam Do, Jérôme Saint-Martin, et al.. On the non-linear effects in graphene devices. Journal of Physics D: Applied Physics, IOP Publishing, 2014, 47 (9), pp.094007. ⟨hal-01951903⟩
  • Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus. Large on/off current ratio in hybrid graphene/BN nanoribbons by transverse electric field-induced control of bandgap. Applied Physics Letters, American Institute of Physics, 2014, 105 (7), ⟨10.1063/1.4893697⟩. ⟨hal-01910199⟩
  • Ming Shi, Jérôme Saint-Martin, Arnaud Bournel, Damien Querlioz, Nicolas Wichmann, et al.. Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications. Solid-State Electronics, Elsevier, 2013, 87, pp.51 - 57. ⟨10.1016/j.sse.2013.05.004⟩. ⟨hal-01910206⟩
  • Minghua Shi, J. Saint-Martin, A. Bournel, D. Querlioz, P. Dollfus, et al.. Numerical and experimental assessment of charge control in III-V nano-metal-oxide-semiconductor field-effect transistor. Journal of Nanoscience and Nanotechnology, American Scientific Publishers, 2013, 13, pp.771-775. ⟨10.1166/jnn.2013.6115⟩. ⟨hal-00795954⟩
  • Philipp Schwaha, Damien Querlioz, Philipp Dollfus, Jérôme Saint-Martin, Mihail Nedjalkov, et al.. Decoherence effects in the Wigner function formalism. Journal of Computational Electronics, Springer Verlag, 2013, 12 (3), pp.388-396. ⟨hal-01951931⟩
  • Viet Hung Nguyen, Jérôme Saint-Martin, Damien Querlioz, Fulvio Mazzamuto, Arnaud Bournel, et al.. Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance. Journal of Computational Electronics, Springer Verlag, 2013, 12 (2), pp.85-93. ⟨hal-01951935⟩
  • Alfonso Alarcón, Viet-Hung Nguyen, Salim Berrada, Damien Querlioz, Jérôme Saint-Martin, et al.. Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60 (3), pp.985-991. ⟨hal-01951940⟩
  • Ming Shi, Jérôme Saint-Martin, Arnaud Bournel, Damien Querlioz, Philippe Dollfus, et al.. Numerical and Experimental Assessment of Charge Control in III–V Nano-Metal-Oxide-Semiconductor Field-Effect Transistor. Journal of Nanoscience and Nanotechnology, American Scientific Publishers, 2013, 13 (2), pp.771-775. ⟨hal-01951943⟩
  • Salim Berrada, Viet Hung Nguyen, Damien Querlioz, Jérôme Saint-Martin, Alfonso Alarcón, et al.. Graphene nanomesh transistor with high on/off ratio and good saturation behavior. Applied Physics Letters, American Institute of Physics, 2013, 103 (18), pp.183509. ⟨hal-01951910⟩
  • F. Mazzamuto, V. Hung Nguyen, y. Apertet, C. Caër, C. Chassat, et al.. Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2011, 83 (23), ⟨10.1103/PhysRevB.83.235426⟩. ⟨hal-01909440⟩
  • Vincent Barral, Thierry Poiroux, Jérôme Saint-Martin, Daniela Munteanu, Jean-Luc Autran, et al.. Experimental Investigation on the Quasi-Ballistic Transport: Part I-Determination of a New Backscattering Coefficient Extraction Methodology. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2009, 56 (3), pp.408-419. ⟨10.1109/TED.2008.2011681⟩. ⟨hal-01430106⟩
  • F. Mazzamuto, Jérôme Saint-Martin, A. Bournel, P. Dollfus, Alexandre Archambault, et al.. Electrical excitation of surface phonon-polaritons in III-V heterostructures: a Monte Carlo study. Journal of Physics: Conference Series, IOP Publishing, 2009, 193 (1), pp.012015. ⟨hal-00574368⟩
  • K. Huet, D. Querlioz, W. Chaisantikulwat, J. Saint-Martin, A. Bournel, et al.. Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxyde semiconductor field effect transistors. Journal of Applied Physics, American Institute of Physics, 2008, 104 (4), pp.044504-1-7. ⟨hal-00391733⟩
  • D. Querlioz, Jérôme Saint-Martin, K. Huet, A. Bournel, V. Aubry-Fortuna, et al.. On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2007, 54 (9), pp.2232 - 2242. ⟨10.1109/TED.2007.902713⟩. ⟨hal-01909433⟩
  • Jérôme Saint-Martin, A. Bournel, F Monsef, C. Chassat, P. Dollfus. Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas. Semiconductor Science and Technology, IOP Publishing, 2006, 21 (4), pp.L29 - L31. ⟨10.1088/0268-1242/21/4/L01⟩. ⟨hal-01909484⟩
  • Jérôme Saint-Martin, A. Bournel, P. Dollfus. On the Ballistic Transport in Nanometer-Scaled DG MOSFETs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2004, 51 (7), pp.1148 - 1155. ⟨10.1109/TED.2004.829904⟩. ⟨hal-01909466⟩

Conference papers15 documents

  • Thibauld Cazimajou, Marco Pala, Jérôme Saint-Martin, Denis Rideau, Philippe Dollfus. Monte Carlo study of Single Photon Avalanche Diodes: quenching statistics. 21st International Workshop on Computational Nanotechnology (IWCN) 2021, May 2021, Online, South Korea. ⟨hal-03254209⟩
  • Ngoc Duc Le, Brice Davier, Philippe Dollfus, Jérôme Saint-Martin. Study of the modal contributions to the heat flux to characterize the phonon transport regime in Si/Ge heterojunctions. 21st International Workshop on Computational Nanotechnology (IWCN) 2021, May 2021, Online, South Korea. ⟨hal-03254218⟩
  • N. Izitounene, N. D. Le, B. Davier, P. Dollfus, Lorenzo Paulatto, et al.. Spectral simulation of heat transfer across polytype interfaces. Fall Meeting of the European Materials Research Society (E-MRS) 2021, Sep 2021, VIRTUAL Conference, Poland. ⟨hal-03276073⟩
  • Denis Rideau, y. Oussaiti, J. Grebot, R. Helleboid, A. Lopez, et al.. Single Photon Avalanche Diode with Monte Carlo Simulations: PDP, Jitter and Quench Probability. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021), Sept. 27-29, 2021, Virtual conference Dallas, US, Sep 2021, Dallas, United States. ⟨hal-03374008⟩
  • N.D. Le, B. Davier, P. Dollfus, M. Marco, Marco G., M.G. Pala, A. Bournel, et al.. Full Band Monte Carlo simulation of phonon transfer at interfaces. 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.27-30, ⟨10.23919/SISPAD49475.2020.9241629⟩. ⟨hal-03029928⟩
  • Brice Davier, Jérôme Larroque, Philippe Dollfus, Laurent Chaput, Sebastian Volz, et al.. Nanoscale heat transfer via Ab-Initio Monte Carlo simulation. 20th International Workshop on Computational Nanotechnology - IWCN 2019 -, May 2019, Evanston, Illinois, USA, United States. ⟨hal-02187168⟩
  • B. Davier, J. Larroque, P. Dollfus, Jérôme Saint-Martin. Heat Transport in Silicon Nanowires within Full-Band Phonon Monte Carlo approach. High Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam. ⟨hal-01952013⟩
  • B. Davier, J. Larroque, Philippe Dollfus, Laurent Chaput, S. Volz, et al.. Full Band Ab-Initio Monte Carlo simulation of heat transfer in nanostructures. Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland. ⟨hal-01951979⟩
  • Vincent Talbo, Jérôme Saint-Martin, Philippe Dollfus. Thermoelectric properties of Quantum Dot-based devices: Cis1.(invité) V Talbo, J Saint-Martin, P Dollfus, “”, IEEE NANO 2018, Cork, Ireland, July 23–26, 2018. To be published in The proceedings of IEEE NANO 2018. Oral.. IEEE NANO 2018, Jul 2018, Cork, Ireland. ⟨hal-01952001⟩
  • J. Larroque, P. Dollfus, Jérôme Saint-Martin. Full-Band modelling of phonons in polytype Ge and Si. 20th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON 20), Jul 2017, Buffalo, NY, United States. pp.012007. ⟨hal-01951995⟩
  • Minghua Shi, J. Saint-Martin, A. Bournel, D. Querlioz, P. Dollfus, et al.. Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation. 37th IEEE International SOI Conference, SOI 2011, 2011, Tempe, AZ, United States. pp.1-2, ⟨10.1109/SOI.2011.6081701⟩. ⟨hal-00799795⟩
  • O. Olivier, Nicolas Wichmann, J.J. Mo, A. Noudeviwa, yannick Roelens, et al.. Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET. 22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, 2010, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩. ⟨hal-00549921⟩
  • Jérôme Saint-Martin, Damien Querlioz, Arnaud Bournel, Philippe Dollfus. Efficient multi sub-band Monte Carlo simulation of nano-scaled Double Gate MOSFETs. 2006 International Conference on Simulation of Semiconductor Processes and Devices, Sep 2006, Monterey, United States. ⟨10.1109/SISPAD.2006.282875⟩. ⟨hal-01827057⟩
  • K. Huet, J. Saint-Martin, A. Bournel, G. Ghibaudo, P. Dollfus, et al.. Étude de la mobilité effective dans les DG MOSFET quasi-balistiques. xxxx, 2006, Grenoble, France. pp.XX. ⟨hal-00148265⟩
  • D. Querlioz, J. Saint-Martin, V.-N. Do, A. Bournel, P. Dollfus. Fully quantum self-consistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approach. 2006 International Electron Devices Meeting, Dec 2006, San Francisco, United States. ⟨10.1109/IEDM.2006.346939⟩. ⟨hal-01827054⟩

Poster communications1 document

  • B. Davier, A. Alkurdi, J. Larroque, S. Volz, S. Merabia, et al.. Comparison of Si/Ge interface thermal transmission modellings: Full-band mismatch models, lattice dynamics and Molecular Dynamics.. Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland. ⟨hal-01951962⟩

Theses1 document

  • Jérôme Saint-Martin. ETUDE PAR SIMULATION MONTE CARLO D'ARCHITECTURES DE MOSFET ULTRACOURTS A GRILLE MULTIPLE SUR SOI. Micro et nanotechnologies/Microélectronique. Université Paris Sud - Paris XI, 2005. Français. ⟨tel-00011335⟩