Jérôme Saint-Martin

Jérôme Saint Martin, Professeur des universités, ENS Paris Saclay - Univ Paris Saclay,

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1041855
1176326

Identifiants chercheurs

jerome-saint-martin
0000-0002-6540-8416
IdRef : 094968608

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Publications

	Thermal conductance of twisted-layer graphite nanofibers Van-Truong Tran , Thanh-Tra Vu , Jérôme Saint-Martin , Marco Pala , Philippe Dollfus Carbon, 2023, 204, pp.601-611. ⟨10.1016/j.carbon.2022.12.059⟩ Article dans une revue hal-03995068v1
	Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials Adel Mfoukh , Jérôme Saint-Martin , Philippe Dollfus , Marco Pala Journal of Computational Electronics, 2023, 22, pp.1257-1263. ⟨10.1007/s10825-023-02080-2⟩ Article dans une revue hal-04161457v1
	Phonon-assisted transport in van der Waals heterostructure tunnel devices A. M'Foukh , Jérôme Saint-Martin , Philippe Dollfus , Marco G. Pala Solid-State Electronics, 2022, 194, pp.108344. ⟨10.1016/j.sse.2022.108344⟩ Article dans une revue hal-03793956v1
	Revisiting thermal conductivity and interface conductance at the nanoscale B. Davier , P. Dollfus , N.D. Le , S. Volz , J. Shiomi International Journal of Heat and Mass Transfer, 2022, 183, Part A, pp.122056. ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩ Article dans une revue hal-03628712v1
	Study of phonon transport across Si/Ge interfaces using Full-Band phonon Monte Carlo simulation N. Le , Brice Davier , N. Izitounene , Philippe Dollfus , J. Saint-Martin Journal of Computational Electronics, 2022, 21 (4), pp.744-755. ⟨10.1007/s10825-022-01885-x⟩ Article dans une revue hal-03859201v1
	Spectral Simulation of Heat Transfer Across Polytype Interfaces Nadjib Izitounene , Ngoc Duc Le , Brice Davier , Philippe Dollfus , Lorenzo Paulatto Crystal Research and Technology, 2022, 57 (9), pp.2200017. ⟨10.1002/crat.202200017⟩ Article dans une revue hal-03864401v1
	Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation Philippe Dollfus , Jérôme Saint-Martin , T. Cazimajou , R. Helleboid , A. Pilotto Solid-State Electronics, 2022, 194, pp.108361. ⟨10.1016/j.sse.2022.108361⟩ Article dans une revue hal-03793955v1
	Revisiting thermal conductivity and interface conductance at the nanoscale Brice Davier , Philippe Dollfus , N.D. Le , S. Volz , J. Shiomi International Journal of Heat and Mass Transfer, 2022, 183 (Part A), pp.122056. ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩ Article dans une revue hal-03859204v1
	Modeling of SPAD avalanche breakdown probability and jitter tail with field lines Rémi Helleboid , Denis Rideau , Jeremy Grebot , Isobel Nicholson , Norbert Moussy Solid-State Electronics, 2022, 194, pp.108376. ⟨10.1016/j.sse.2022.108376⟩ Article dans une revue hal-03793952v1
	Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices Remi Helleboid , Denis Rideau , Jeremy Grebot , Isobel Nicholson , Norbert Moussy IEEE Journal of the Electron Devices Society, 2022, 10, pp.584-592. ⟨10.1109/JEDS.2022.3168365⟩ Article dans une revue hal-03794480v1
	Revisiting thermal conductivity and interface conductance at the nanoscale Brice Davier , Philippe Dollfus , N D Le , Sebastian Volz , J Shiomi International Journal of Heat and Mass Transfer, 2021, 183, ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩ Article dans une revue hal-03868857v1
	Electron transport properties of graphene nanoribbons with Gaussian deformation Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus Physical Review B, 2020, 102 (7), ⟨10.1103/PhysRevB.102.075425⟩ Article dans une revue hal-02935227v1
	High thermoelectric and electronic performance in graphene nanoribbons by isotope and vacancy engineering Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus , Sebastian Volz Materials Today: Proceedings, 2018, 4 (4, Part 1), pp.10393-10400. ⟨10.1016/j.matpr.2017.12.287⟩ Article dans une revue hal-01927617v1
	Heat transfer in rough nanofilms and nanowires using Full Band Ab Initio Monte Carlo simulation Brice Davier , Jérôme Larroque , Philippe Dollfus , Laurent Chaput , Sebastian Volz Journal of Physics: Condensed Matter, inPress, 30 (49), pp.495902. ⟨10.1088/1361-648X/aaea4f⟩ Article dans une revue hal-01906247v1
	Phonon transmission at Si/Ge and polytypic Ge interfaces using full-band mismatch based models Jérôme Larroque , Philippe Dollfus , Jérôme Saint-Martin Journal of Applied Physics, 2018, 123 (2), ⟨10.1063/1.5007034⟩ Article dans une revue hal-01906686v1
	High thermoelectric performance of graphite nanofibers Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus , Sebastian Volz Nanoscale, 2018, 10 (8), pp.3784 - 3791. ⟨10.1039/C7NR07817J⟩ Article dans une revue hal-01909447v1
	Ab initio based calculations of the thermal conductivity at the micron scale Laurent Chaput , Jérôme Larroque , Philippe Dollfus , Jérôme Saint-Martin , David Lacroix Applied Physics Letters, 2018, 112 (3), pp.033104. ⟨10.1063/1.5010959⟩ Article dans une revue hal-01689364v1
	Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors Vincent Talbo , Jérôme Saint-Martin , Sylvie Galdin-Retailleau , Philippe Dollfus Scientific Reports, 2017, 7 (1), ⟨10.1038/s41598-017-14009-4⟩ Article dans une revue hal-01906689v1
	Optimizing the thermoelectric performance of graphene nano-ribbons without degrading the electronic properties Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus , Sebastian Volz Scientific Reports, 2017, 7 (1), ⟨10.1038/s41598-017-02230-0⟩ Article dans une revue hal-01631292v1
	Third nearest neighbor parameterized tight binding model for graphene nano-ribbons Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus , Sebastian Volz AIP Advances, 2017, 7 (7), ⟨10.1063/1.4994771⟩ Article dans une revue hal-01631290v1
	Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons T. Nghiem , Jérôme Saint-Martin , P. Dollfus Journal of Computational Electronics, 2016, 15 (1), pp.3 - 15. ⟨10.1007/s10825-015-0773-2⟩ Article dans une revue hal-01906694v1
	Enhanced Seebeck effect in graphene devices by strain and doping engineering M. Chung Nguyen , V. Hung Nguyen , Huy-Viet Nguyen , Jérôme Saint-Martin , P. Dollfus Physica E: Low-dimensional Systems and Nanostructures, 2015, 73, pp.207 - 212. ⟨10.1016/j.physe.2015.05.020⟩ Article dans une revue hal-01909501v1
	High thermoelectric performance in graphene nanoribbons by graphene/BN interface engineering Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus Nanotechnology, 2015, 26 (49), ⟨10.1088/0957-4484/26/49/495202⟩ Article dans une revue hal-01909496v1
	Thermoelectric effects in graphene nanostructures Philippe Dollfus , Viet Hung Nguyen , Jérôme Saint-Martin Journal of Physics: Condensed Matter, 2015, 27 (13), ⟨10.1088/0953-8984/27/13/133204⟩ Article dans une revue hal-01909508v1
	Strain-induced conduction gap in vertical devices made of misoriented graphene layers V Hung Nguyen , Huy-Viet Nguyen , Jérôme Saint-Martin , P. Dollfus Nanotechnology, 2015, 26 (11), ⟨10.1088/0957-4484/26/11/115201⟩ Article dans une revue hal-01909504v1
	Dispersive hybrid states and bandgap in zigzag graphene/BN heterostructures Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus Semiconductor Science and Technology, 2015, 30 (10), ⟨10.1088/0268-1242/30/10/105002⟩ Article dans une revue hal-01909498v1
	Enhanced thermoelectric figure of merit in vertical graphene junctions Viet-Hung Nguyen , Mai Chung Nguyen , Huy-Viet Nguyen , Jérôme Saint-Martin , Philippe Dollfus Applied Physics Letters, 2014, 105 (13), ⟨10.1063/1.4896915⟩ Article dans une revue hal-01910202v1
	New insights into self-heating in double-gate transistors by solving Boltzmann transport equations T. Thu Trang Nghiêm , Jérôme Saint-Martin , P. Dollfus Journal of Applied Physics, 2014, 116 (7), ⟨10.1063/1.4893646⟩ Article dans une revue hal-01906713v1
	Large on/off current ratio in hybrid graphene/BN nanoribbons by transverse electric field-induced control of bandgap Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus Applied Physics Letters, 2014, 105 (7), ⟨10.1063/1.4893697⟩ Article dans une revue hal-01910199v1
	On the non-linear effects in graphene devices Viet Hung Nguyen , Alfonso Alarcón , Salim Berrada , Van Nam Do , Jérôme Saint-Martin Journal of Physics D: Applied Physics, 2014, 47 (9), pp.094007 Article dans une revue hal-01951903v1
	Entre utopie et réalités professionnelles, la Gymnastique Volontaire (GV) en France (1976-1985) Natalia Bazoge , J. Saint-Martin Carrefours de l'éducation, 2014, Hors-série « Education nationale – Jeunesse et Sports. Territoires en conflits ? », 3, pp.57-74 Article dans une revue hal-02063803v1
	Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications Ming Shi , Jérôme Saint-Martin , Arnaud Bournel , Damien Querlioz , Nicolas Wichmann Solid-State Electronics, 2013, 87, pp.51 - 57. ⟨10.1016/j.sse.2013.05.004⟩ Article dans une revue hal-01910206v1
	Numerical and experimental assessment of charge control in III-V nano-metal-oxide-semiconductor field-effect transistor Minghua Shi , J. Saint-Martin , A. Bournel , D. Querlioz , P. Dollfus Journal of Nanoscience and Nanotechnology, 2013, 13, pp.771-775. ⟨10.1166/jnn.2013.6115⟩ Article dans une revue hal-00795954v1
	Graphene nanomesh transistor with high on/off ratio and good saturation behavior Salim Berrada , Viet Hung Nguyen , Damien Querlioz , Jérôme Saint-Martin , Alfonso Alarcón Applied Physics Letters, 2013, 103 (18), ⟨10.1063/1.4828496⟩ Article dans une revue hal-01910209v1
	Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance Viet Hung Nguyen , Jérôme Saint-Martin , Damien Querlioz , Fulvio Mazzamuto , Arnaud Bournel Journal of Computational Electronics, 2013, 12 (2), pp.85-93 Article dans une revue hal-01951935v1
	Graphene nanomesh transistor with high on/off ratio and good saturation behavior Salim Berrada , Viet Hung Nguyen , Damien Querlioz , Jérôme Saint-Martin , Alfonso Alarcón Applied Physics Letters, 2013, 103 (18), pp.183509 Article dans une revue hal-01951910v1
	Decoherence effects in the Wigner function formalism Philipp Schwaha , Damien Querlioz , Philipp Dollfus , Jérôme Saint-Martin , Mihail Nedjalkov Journal of Computational Electronics, 2013, 12 (3), pp.388-396 Article dans une revue hal-01951931v1
	Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors Alfonso Alarcón , Viet-Hung Nguyen , Salim Berrada , Damien Querlioz , Jérôme Saint-Martin IEEE Transactions on Electron Devices, 2013, 60 (3), pp.985-991 Article dans une revue hal-01951940v1
	Numerical and Experimental Assessment of Charge Control in III–V Nano-Metal-Oxide-Semiconductor Field-Effect Transistor Ming Shi , Jérôme Saint-Martin , Arnaud Bournel , Damien Querlioz , Philippe Dollfus Journal of Nanoscience and Nanotechnology, 2013, 13 (2), pp.771-775 Article dans une revue hal-01951943v1
	Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons F. Mazzamuto , V. Hung Nguyen , Y. Apertet , C. Caër , C. Chassat Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (23), ⟨10.1103/PhysRevB.83.235426⟩ Article dans une revue hal-01909440v1
	Edge shape effect on vibrational modes in graphene nanoribbons: A numerical study Audrey Valentin , F. Mazzamuto , J. Saint-Martin , C. Chassat , P. Dollfus Journal of Applied Physics, 2011, 109 (6), pp.064516. ⟨10.1063/1.3552293⟩ Article dans une revue hal-03440047v1
	Electrical excitation of surface phonon-polaritons in III-V heterostructures: a Monte Carlo study Fulvio Mazzamuto , Jérôme Saint-Martin , Arnaud Bournel , P. Dollfus , Alexandre Archambault Journal of Physics: Conference Series, 2009, 193 (1), pp.012015. ⟨10.1088/1742-6596/193/1/012015⟩ Article dans une revue hal-00574368v1
	Experimental Investigation on the Quasi-Ballistic Transport: Part I-Determination of a New Backscattering Coefficient Extraction Methodology Vincent Barral , Thierry Poiroux , Jérôme Saint-Martin , Daniela Munteanu , Jean-Luc Autran IEEE Transactions on Electron Devices, 2009, 56 (3), pp.408-419. ⟨10.1109/TED.2008.2011681⟩ Article dans une revue hal-01430106v1
	Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxyde semiconductor field effect transistors K. Huet , D. Querlioz , W. Chaisantikulwat , J. Saint-Martin , A. Bournel Journal of Applied Physics, 2008, 104 (4), pp.044504-1-7 Article dans une revue hal-00391733v1
	On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation D. Querlioz , Jérôme Saint-Martin , K. Huet , A. Bournel , V. Aubry-Fortuna IEEE Transactions on Electron Devices, 2007, 54 (9), pp.2232 - 2242. ⟨10.1109/TED.2007.902713⟩ Article dans une revue hal-01909433v1
	Device performance and optimization of decananometer long double gate MOSFET by Monte Carlo simulation A. Bournel , V. Aubry-Fortuna , J. Saint-Martin , P. Dollfus Solid-State Electronics, 2007, 51 (4), pp.543-550. ⟨10.1016/j.sse.2007.02.010⟩ Article dans une revue hal-02452609v1
	Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas Jérôme Saint-Martin , A. Bournel , F Monsef , C. Chassat , P. Dollfus Semiconductor Science and Technology, 2006, 21 (4), pp.L29 - L31. ⟨10.1088/0268-1242/21/4/L01⟩ Article dans une revue hal-01909484v1
	On the Ballistic Transport in Nanometer-Scaled DG MOSFETs Jérôme Saint-Martin , A. Bournel , P. Dollfus IEEE Transactions on Electron Devices, 2004, 51 (7), pp.1148 - 1155. ⟨10.1109/TED.2004.829904⟩ Article dans une revue hal-01909466v1

	Monte Carlo study of Single Photon Avalanche Diodes: quenching statistics Thibauld Cazimajou , Marco Pala , Jérôme Saint-Martin , Denis Rideau , Philippe Dollfus 21st International Workshop on Computational Nanotechnology (IWCN) 2021, May 2021, Online, South Korea Communication dans un congrès hal-03254209v1
	Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability Marco G. Pala , D. Rideau , Y. Oussaiti , J. Grebot , R. Helleboid 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.293-296, ⟨10.1109/SISPAD54002.2021.9592567⟩ Communication dans un congrès hal-03445562v1
	Study of the modal contributions to the heat flux to characterize the phonon transport regime in Si/Ge heterojunctions Ngoc Duc Le , Brice Davier , Philippe Dollfus , Jérôme Saint-Martin 21st International Workshop on Computational Nanotechnology (IWCN) 2021, May 2021, Online, South Korea Communication dans un congrès hal-03254218v1
	Spectral simulation of heat transfer across polytype interfaces N. Izitounene , N. D. Le , B. Davier , P. Dollfus , Lorenzo Paulatto Fall Meeting of the European Materials Research Society (E-MRS) 2021, Sep 2021, VIRTUAL Conference, Poland Communication dans un congrès hal-03276073v1
	Single Photon Avalanche Diode with Monte Carlo Simulations: PDP, Jitter and Quench Probability Denis Rideau , Y. Oussaiti , J. Grebot , R. Helleboid , A. Lopez International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021), Sept. 27-29, 2021, Virtual conference Dallas, US, Sep 2021, Dallas, United States Communication dans un congrès hal-03374008v1
	Full Band Monte Carlo simulation of phonon transfer at interfaces N.D. Le , B. Davier , P. Dollfus , Marco G. Pala , A. Bournel 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.27-30, ⟨10.23919/SISPAD49475.2020.9241629⟩ Communication dans un congrès hal-03029928v1
	Nanoscale heat transfer via Ab-Initio Monte Carlo simulation Brice Davier , Jérôme Larroque , Philippe Dollfus , Laurent Chaput , Sebastian Volz 20th International Workshop on Computational Nanotechnology - IWCN 2019 -, May 2019, Evanston, Illinois, USA, United States Communication dans un congrès hal-02187168v1
	Thermoelectric properties of Quantum Dot-based devices Vincent Talbo , Jérôme Saint-Martin , Philippe Dollfus IEEE NANO 2018, Jul 2018, Cork, Ireland Communication dans un congrès hal-01952001v1
	Enhanced Seebeck effect in graphene devices by strain and doping engineering Mai-Chung Nguyen , Viet-Hung Nguyen , Huy-Viet Nguyen , Jérôme Saint-Martin , Philippe Dollfus High Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam Communication dans un congrès hal-01952016v1
	Heat Transport in Silicon Nanowires within Full-Band Phonon Monte Carlo approach B. Davier , J. Larroque , P. Dollfus , Jérôme Saint-Martin High Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam Communication dans un congrès hal-01952013v1
	Full Band Ab-Initio Monte Carlo simulation of heat transfer in nanostructures B. Davier , J. Larroque , Philippe Dollfus , Laurent Chaput , S. Volz Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland Communication dans un congrès hal-01951979v1
	Full-Band modelling of phonons in polytype Ge and Si J. Larroque , P. Dollfus , Jérôme Saint-Martin 20th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON 20), Jul 2017, Buffalo, NY, United States. pp.012007 Communication dans un congrès hal-01951995v1
	Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation Minghua Shi , J. Saint-Martin , A. Bournel , D. Querlioz , P. Dollfus 37th IEEE International SOI Conference, SOI 2011, 2011, Tempe, AZ, United States. pp.1-2, ⟨10.1109/SOI.2011.6081701⟩ Communication dans un congrès hal-00799795v1
	Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET Aurélien Olivier , Nicolas Wichmann , Jiongjong Mo , Albert M.D. Noudeviwa , Yannick Roelens 22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩ Communication dans un congrès hal-00549921v1
	Efficient multi sub-band Monte Carlo simulation of nano-scaled Double Gate MOSFETs Jérôme Saint-Martin , Damien Querlioz , Arnaud Bournel , Philippe Dollfus 2006 International Conference on Simulation of Semiconductor Processes and Devices, Sep 2006, Monterey, United States. ⟨10.1109/SISPAD.2006.282875⟩ Communication dans un congrès hal-01827057v1
	Fully quantum self-consistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approach D. Querlioz , J. Saint-Martin , V.-N. Do , A. Bournel , P. Dollfus 2006 International Electron Devices Meeting, Dec 2006, San Francisco, United States. ⟨10.1109/IEDM.2006.346939⟩ Communication dans un congrès hal-01827054v1
	Étude de la mobilité effective dans les DG MOSFET quasi-balistiques K. Huet , J. Saint-Martin , A. Bournel , G. Ghibaudo , P. Dollfus xxxx, 2006, Grenoble, France. pp.XX Communication dans un congrès hal-00148265v1

	Comparison of Si/Ge interface thermal transmission modellings: Full-band mismatch models, lattice dynamics and Molecular Dynamics. B. Davier , A. Alkurdi , J. Larroque , S. Volz , S. Merabia Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland. Poster de conférence hal-01951962v1

	ETUDE PAR SIMULATION MONTE CARLO D'ARCHITECTURES DE MOSFET ULTRACOURTS A GRILLE MULTIPLE SUR SOI Jérôme Saint-Martin Micro et nanotechnologies/Microélectronique. Université Paris Sud - Paris XI, 2005. Français. ⟨NNT : ⟩ Thèse tel-00011335v1

Jérôme Saint-Martin

Publications

Thermal conductance of twisted-layer graphite nanofibers

Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials

Phonon-assisted transport in van der Waals heterostructure tunnel devices

Revisiting thermal conductivity and interface conductance at the nanoscale

Study of phonon transport across Si/Ge interfaces using Full-Band phonon Monte Carlo simulation

Spectral Simulation of Heat Transfer Across Polytype Interfaces

Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation

Revisiting thermal conductivity and interface conductance at the nanoscale

Modeling of SPAD avalanche breakdown probability and jitter tail with field lines

Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices

Revisiting thermal conductivity and interface conductance at the nanoscale

Electron transport properties of graphene nanoribbons with Gaussian deformation

High thermoelectric and electronic performance in graphene nanoribbons by isotope and vacancy engineering

Heat transfer in rough nanofilms and nanowires using Full Band Ab Initio Monte Carlo simulation

Phonon transmission at Si/Ge and polytypic Ge interfaces using full-band mismatch based models

High thermoelectric performance of graphite nanofibers

Ab initio based calculations of the thermal conductivity at the micron scale

Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors

Optimizing the thermoelectric performance of graphene nano-ribbons without degrading the electronic properties

Third nearest neighbor parameterized tight binding model for graphene nano-ribbons

Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons

Enhanced Seebeck effect in graphene devices by strain and doping engineering

High thermoelectric performance in graphene nanoribbons by graphene/BN interface engineering

Thermoelectric effects in graphene nanostructures

Strain-induced conduction gap in vertical devices made of misoriented graphene layers

Dispersive hybrid states and bandgap in zigzag graphene/BN heterostructures

Enhanced thermoelectric figure of merit in vertical graphene junctions

New insights into self-heating in double-gate transistors by solving Boltzmann transport equations

Large on/off current ratio in hybrid graphene/BN nanoribbons by transverse electric field-induced control of bandgap

On the non-linear effects in graphene devices

Entre utopie et réalités professionnelles, la Gymnastique Volontaire (GV) en France (1976-1985)

Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications

Numerical and experimental assessment of charge control in III-V nano-metal-oxide-semiconductor field-effect transistor

Graphene nanomesh transistor with high on/off ratio and good saturation behavior

Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance

Graphene nanomesh transistor with high on/off ratio and good saturation behavior

Decoherence effects in the Wigner function formalism

Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

Numerical and Experimental Assessment of Charge Control in III–V Nano-Metal-Oxide-Semiconductor Field-Effect Transistor

Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons

Edge shape effect on vibrational modes in graphene nanoribbons: A numerical study

Electrical excitation of surface phonon-polaritons in III-V heterostructures: a Monte Carlo study

Experimental Investigation on the Quasi-Ballistic Transport: Part I-Determination of a New Backscattering Coefficient Extraction Methodology

Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxyde semiconductor field effect transistors

On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation

Device performance and optimization of decananometer long double gate MOSFET by Monte Carlo simulation

Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas

On the Ballistic Transport in Nanometer-Scaled DG MOSFETs

Monte Carlo study of Single Photon Avalanche Diodes: quenching statistics

Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability

Study of the modal contributions to the heat flux to characterize the phonon transport regime in Si/Ge heterojunctions

Spectral simulation of heat transfer across polytype interfaces

Single Photon Avalanche Diode with Monte Carlo Simulations: PDP, Jitter and Quench Probability

Full Band Monte Carlo simulation of phonon transfer at interfaces

Nanoscale heat transfer via Ab-Initio Monte Carlo simulation

Thermoelectric properties of Quantum Dot-based devices

Enhanced Seebeck effect in graphene devices by strain and doping engineering

Heat Transport in Silicon Nanowires within Full-Band Phonon Monte Carlo approach

Full Band Ab-Initio Monte Carlo simulation of heat transfer in nanostructures

Full-Band modelling of phonons in polytype Ge and Si

Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation

Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

Efficient multi sub-band Monte Carlo simulation of nano-scaled Double Gate MOSFETs

Fully quantum self-consistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approach

Étude de la mobilité effective dans les DG MOSFET quasi-balistiques

Comparison of Si/Ge interface thermal transmission modellings: Full-band mismatch models, lattice dynamics and Molecular Dynamics.

ETUDE PAR SIMULATION MONTE CARLO D'ARCHITECTURES DE MOSFET ULTRACOURTS A GRILLE MULTIPLE SUR SOI