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Etude par propagation de paquets d'ondes de la dynamique du transfert électronique
Jelena Sjakste
Physique Atomique [physics.atom-ph]. Université Paris Sud - Paris XI, 2004. Français. ⟨NNT : ⟩
Thèse
tel-00008743v1
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Anharmonic coupling, thermal transport and acoustic wave attenuation in cubic semiconductors and bismuth.
Maxime Markov
,
Jelena Sjakste
,
Nathalie Vast
,
Bernard Perrin
,
Lorenzo Paulatto
Article dans une revue
hal-03049261v1
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Ab initio study of electron-phonon coupling and excitonic linewidth in GaAs under pressure and in GaP
J. Sjakste
,
N. Vast
,
V. Tuyterev
Journal of Luminescence, 2008, 128 (5-6), pp.1004 - 1006
Article dans une revue
hal-00353759v1
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Ionization of Rydberg atoms colliding with a metal surface
J. Sjakste
,
A.G. Borisov
,
J.P. Gauyacq
Physical Review A : Atomic, molecular, and optical physics [1990-2015], 2006, 73, pp.042903
Article dans une revue
hal-00023669v1
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Theoretical phase diagram of boron carbide from ambient to high pressure and temperature
Antoine Jay
,
Olivier Hardouin Duparc
,
Jelena Sjakste
,
Nathalie Madeleine Marguerite Vast
Article dans une revue
hal-02302703v1
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Boron carbide under torsional deformation: evidence of the formation of chain vacancies in the plastic regime
Amrita Chakraborti
,
Antoine Jay
,
Olivier Hardouin Duparc
,
Jelena Sjakste
,
Keevin Béneut
,
et al.
Article dans une revue
hal-03849417v1
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Probing adsorbate state lifetime with low energy ions.
J. Sjakste
,
A.G. Borisov
,
J.P. Gauyacq
Physical Review Letters, 2004, 92, pp.156101
Article dans une revue
hal-00018043v1
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Ionisation of Rydberg atoms colliding on metal surfaces
J.P. Gauyacq
,
J. Sjakste
,
A.G. Borisov
16ème International Workshop on Inelastic Ion-Surface Collisions (IISC 16), 2006, Schloss Hernstein, Austria
Communication dans un congrès
hal-00270323v1
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Theoretical Raman spectrum of boron carbide B4.3C under pressure
Antoine Jay
,
Olivier Hardouin Duparc
,
Jelena Sjakste
,
Nathalie Vast
Article dans une revue
hal-04294014v1
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Ultrafast relaxation dynamics of highly excited hot electrons in silicon
Hiroshi Tanimura
,
Jun'Ichi Kanasaki
,
Katsumi Tanimura
,
Jelena Sjakste
,
Nathalie Madeleine Marguerite Vast
Article dans une revue
hal-02302699v1
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Role of Dimensionality and Size in Governing the Drag Seebeck Coefficient of Doped Silicon Nanostructures: A Fundamental Understanding
Raja Sen
,
Nathalie Vast
,
Jelena Sjakste
Article dans une revue
hal-04125643v1
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Analysis of the population of continuum states in wave packet propagation calculations
J. Sjakste
,
A.G. Borisov
,
J.P. Gauyacq
,
A.K. Kazansky
Journal of Physics B: Atomic, Molecular and Optical Physics, 2004, 37, pp.1593
Article dans une revue
hal-00019302v1
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Hot electron relaxation dynamics in semiconductors: assessing the strength of the electron–phonon coupling from the theoretical and experimental viewpoints
J. Sjakste
,
K Tanimura
,
G Barbarino
,
L. Perfetti
,
N. Vast
Article dans une revue
hal-02302708v1
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Probing adsorbate state lifetime with low energy ions
J.P. Gauyacq
,
J. Sjakste
,
A.G. Borisov
24th Werner Brandt Workshop on Particle Penetration Phenomena and Excitation of Solids, 2004, Berlin, Germany
Communication dans un congrès
hal-00019748v1
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Resonant charge transfer in back-scattering of H-atoms from the Cs adsorbates on the Cs/Cu(111) surface
J. Sjakste
,
A.G. Borisov
,
J.P. Gauyacq
ICACS 21, 2004, Gènes, Italy
Communication dans un congrès
hal-00019766v1
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Theoretical intrinsic lifetime limit of shallow donor states in silicon
V. Tyuterev
,
Jelena Sjakste
,
Nathalie Madeleine Marguerite Vast
Article dans une revue
hal-01013724v1
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Ultrafast dynamics of hot carriers in a quasi–two-dimensional electron gas on InSe
Zhesheng Chen
,
Jelena Sjakste
,
Jingwei Dong
,
Amina Taleb-Ibrahimi
,
Jean-Pascal Rueff
,
et al.
Proceedings of the National Academy of Sciences of the United States of America, 2020, 117 (36), pp.21962-21967. ⟨10.1073/pnas.2008282117⟩
Article dans une revue
hal-03049219v1
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Ultrafast dynamics of photoexcited carriers in bulk semiconductors and in accumulation layer: energy relaxation and screening effects
Jelena Sjakste
8)LIVE ONLINE CONGRESS - International conference on electron-phonon coupling and thermoelectric efficiency, Nov 2020, San Sebastian, Spain
Communication dans un congrès
hal-03328012v1
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Mechanical properties of icosahedral boron carbide explained from first principles
R. Raucoules
,
Nathalie Vast
,
Emmanuel Betranhandy
,
Jelena Sjakste
Article dans une revue
hal-01068310v1
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Ab initio study of Γ − X intervalley scattering in GaAs under pressure
Jelena Sjakste
,
Valeriy Tyuterev
,
Nathalie Madeleine Marguerite Vast
Article dans une revue
hal-02303565v1
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Breakdown of Herring's processes in cubic semiconductors for sub-terahertz longitudinal acoustic phonons
Maxime Markov
,
Jelena Sjakste
,
Nathalie Madeleine Marguerite Vast
,
Romain Legrand
,
Bernard Perrin
,
et al.
Article dans une revue
hal-01976940v1
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Transfert électronique atome-surface : étude théorique et numérique
J. Sjakste
,
A.G. Borisov
,
J.P. Gauyacq
Colloque Alain Bouissy, 2004, Orsay, France
Communication dans un congrès
hal-00019762v1
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When carbon impurities trigger the synthesis of alpha boron at high pressure and high temperature
Amrita Chakraborti
,
Yeonsoo Cho
,
Jelena Sjakste
,
Benoit Baptiste
,
Laura Henry
,
et al.
Article dans une revue
hal-04262284v1
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Photoexcited electron dynamics and energy loss rate in silicon: temperature dependence and main scattering channels
Raja Sen
,
Nathalie Vast
,
Jelena Sjakste
Proceedings of SPIE, the International Society for Optical Engineering, 2022, SPIE Proceedings, 12132, pp.1213204. ⟨10.1117/12.2621174⟩
Article dans une revue
hal-03858225v1
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Wannier interpolation of the electron-phonon matrix elements in polar semiconductors: Polar-optical coupling in GaAs
J. Sjakste
,
N. Vast
,
M. Calandra
,
F. Mauri
Article dans une revue
hal-02303558v1
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Boron carbides from first principles
Nathalie Madeleine Marguerite Vast
,
Jelena Sjakste
,
Emmanuel Betranhandy
Article dans une revue
hal-01013518v1
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Thermoelectric transport properties of silicon: Toward an ab initio approach
Zhao Wang
,
Shidong Wang
,
Sergey Obukhov
,
Nathalie Madeleine Marguerite Vast
,
Jelena Sjakste
,
et al.
Article dans une revue
hal-02303563v1
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Ab initio study of the effects of pressure and strain on electron-phonon coupling in IV and III-V semiconductors
Jelena Sjakste
,
Nathalie Madeleine Marguerite Vast
,
Hariom Jani
,
Sergey Obukhov
,
Valeriy Tyuterev
Article dans une revue
istex
hal-02303600v1
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Ab initio study of defective chains in icosahedral boron carbide B4C
Emmanuel Betranhandy
,
Nathalie Madeleine Marguerite Vast
,
Jelena Sjakste
Article dans une revue
istex
hal-02303605v1
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Nanoscale mechanisms for the reduction of heat transport in bismuth
Maxime Markov
,
Jelena Sjakste
,
Giorgia Fugallo
,
Lorenzo Paulatto
,
Michele Lazzeri
,
et al.
Article dans une revue
hal-01284828v1
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