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Number of documents

116

Pr. Jean Paul Salvestrini


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Journal articles98 documents

  • Ali Soltani, B. Benbakhti, J.-C. Gerbedoen, A. Khediri, H. Maher, et al.. A cost-effective technology to improve power performance of nanoribbons GaN HEMTs. Applied Physics Letters, American Institute of Physics, 2022, 120 (4), pp.042102. ⟨10.1063/5.0080240⟩. ⟨hal-03544158⟩
  • Suresh Sundaram, Phuong Vuong, Adama Mballo, Taha Ayari, Soufiane Karrakchou, et al.. MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics. APL Materials, AIP Publishing 2021, 9 (6), pp.061101. ⟨10.1063/5.0049306⟩. ⟨hal-03350328⟩
  • Soufiane Karrakchou, Suresh Sundaram, Rajat Gujrati, Phuong Vuong, Adama Mballo, et al.. Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer. ACS Applied Electronic Materials, American Chemical Society, 2021, 3 (6), pp.2614-2621. ⟨10.1021/acsaelm.1c00206⟩. ⟨hal-03350389⟩
  • I. Daldoul, S. Othmani, A. Mballo, P. Vuong, Jean-Paul Salvestrini, et al.. Growth and characterization of cubic GaN grown on GaAs (110) substrate by MOVPE. Materials Science in Semiconductor Processing, Elsevier, 2021, 132, pp.105909. ⟨10.1016/j.mssp.2021.105909⟩. ⟨hal-03350514⟩
  • W. Malek, A. Kahouli, M. Bouzidi, N. Chaaben, Abdullah Alshammari, et al.. Optical characterization by photoreflectance of GaN after its partial thermal decomposition. Optik, Elsevier, 2021, 248, pp.168070. ⟨10.1016/j.ijleo.2021.168070⟩. ⟨hal-03445791⟩
  • Adama Mballo, Ashutosh Srivastava, Suresh Sundaram, Phuong Vuong, Soufiane Karrakchou, et al.. Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions. Nanomaterials, MDPI, 2021, 11 (1), pp.211. ⟨10.3390/nano11010211⟩. ⟨hal-03117696⟩
  • Soufiane Karrakchou, Suresh Sundaram, Taha Ayari, Adama Mballo, Phuong Vuong, et al.. Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates. Scientific Reports, Nature Publishing Group, 2020, 10 (1), pp.211. ⟨10.1038/s41598-020-77681-z⟩. ⟨hal-03120983⟩
  • Phuong Vuong, Suresh Sundaram, Adama Mballo, Gilles Patriarche, Stefano Leone, et al.. Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN. ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2020, 12 (49), pp.55460 - 55466. ⟨10.1021/acsami.0c16850⟩. ⟨hal-03350674⟩
  • P. Vuong, A. Mballo, S. Sundaram, G. Patriarche, Y. Halfaya, et al.. Single crystalline boron rich B(Al)N alloys grown by MOVPE. Applied Physics Letters, American Institute of Physics, 2020, 116 (4), pp.042101. ⟨10.1063/1.5135505⟩. ⟨hal-02464319⟩
  • Sarah El Himer, Salima El Ayane, Sara El Yahyaoui, Jean-Paul Salvestrini, Ali Ahaitouf. Photovoltaic Concentration: Research and Development. Energies, MDPI, 2020, 13 (21), pp.5721. ⟨10.3390/en13215721⟩. ⟨hal-03350722⟩
  • Suresh Sundaram, Xin Li, Yacine Halfaya, Taha Ayari, Gilles Patriarche, et al.. Light-Emitting Diodes: Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019). Advanced Materials Interfaces, Wiley, 2019, 6 (16), pp.1970102. ⟨10.1002/admi.201970102⟩. ⟨hal-02282666⟩
  • J. Laifi, C. Saidi, N. Chaaben, A. Bchetnia, Y. El Gmili, et al.. Role of the TMG flow rate on the GaN layer properties grown by MOVPE on (hkl) GaAs substrates. Materials Science in Semiconductor Processing, Elsevier, 2019, 101, pp.253-261. ⟨10.1016/j.mssp.2019.06.006⟩. ⟨hal-02282621⟩
  • Walid El Huni, Soufiane Karrakchou, Yacine Halfaya, Muhammad Arif, Matthew Jordan, et al.. Nanopyramid-based absorber to boost the efficiency of InGaN solar cells. Solar Energy, Elsevier, 2019, 190, pp.93-103. ⟨10.1016/j.solener.2019.07.090⟩. ⟨hal-02282639⟩
  • Suresh Sundaram, Xin Li, Yacine Halfaya, Taha Ayari, Gilles Patriarche, et al.. Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride. Advanced Materials Interfaces, Wiley, 2019, pp.1900207. ⟨10.1002/admi.201900207⟩. ⟨hal-02160835⟩
  • Suresh Sundaram, Xin Li, Saiful Alam, Taha Ayari, Yacine Halfaya, et al.. MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates. Journal of Crystal Growth, Elsevier, 2019, 507, pp.352-356. ⟨10.1016/j.jcrysgro.2018.10.060⟩. ⟨hal-02282679⟩
  • Taha Ayari, Suresh Sundaram, Chris Bishop, Adama Mballo, Phuong Vuong, et al.. Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019). Advanced Materials Technologies, Wiley, 2019, 4 (10), pp.1970057. ⟨10.1002/admt.201970057⟩. ⟨hal-02321646⟩
  • C Munson, Q. Gaimard, Kamel Merghem, S. Sundaram, J. Rogers, et al.. Modeling, design, fabrication and experimentation of a GaN-based, 63Ni betavoltaic battery. Journal of Physics D: Applied Physics, IOP Publishing, 2018, 51 (3), pp.035101. ⟨10.1088/1361-6463/aa9e41⟩. ⟨cea-01765048⟩
  • Taha Ayari, Suresh Sundaram, Xin Li, Saiful Alam, Chris Bishop, et al.. Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performance. ACS photonics, American Chemical Society,, 2018, 5 (8), pp.3003-3008. ⟨10.1021/acsphotonics.8b00663⟩. ⟨hal-02158426⟩
  • H. Bouazizi, M. Bouzidi, N. Chaaben, Y. El Gmili, Jean-Paul Salvestrini, et al.. Observation of the early stages of GaN thermal decomposition at 1200 °C under N2. Materials Science and Engineering: B, Elsevier, 2018, 227, pp.16-21. ⟨10.1016/j.mseb.2017.10.002⟩. ⟨hal-01831065⟩
  • Saiful Alam, Suresh Sundaram, Xin Li, Youssef El Gmili, Miryam Elouneg-Jamroz, et al.. Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well. Superlattices and Microstructures, Elsevier, 2017, 112, pp.279-286. ⟨10.1016/j.spmi.2017.09.032⟩. ⟨hal-01831029⟩
  • Walid El-Huni, Anne Migan-Dubois, Zakaria Djebbour, Paul L. Voss, Jean-Paul Salvestrini, et al.. Optimization of semibulk InGaN-based solar cell using realistic modeling. Solar Energy, Elsevier, 2017, 157, pp.687-691. ⟨10.1016/j.solener.2017.08.074⟩. ⟨hal-01630066⟩
  • M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, et al.. Improving InGaN heterojunction solar cells efficiency using a semibulk absorber. Solar Energy Materials and Solar Cells, Elsevier, 2017, 159, pp.405 - 411. ⟨10.1016/j.solmat.2016.09.030⟩. ⟨hal-01420490⟩
  • Xin Li, Matthew Jordan, Taha Ayari, Suresh Sundaram, Youssef El Gmili, et al.. Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE. Scientific Reports, Nature Publishing Group, 2017, 7 (1), ⟨10.1038/s41598-017-00865-7⟩. ⟨hal-01830854⟩
  • Saiful Alam, Suresh Sundaram, Helge Haas, Xin Li, Youssef El Gmili, et al.. Investigation of p-contact performance for indium rich InGaN based light emitting diodes and solar cells. physica status solidi (a), Wiley, 2017, 214 (4), ⟨10.1002/pssa.201600496⟩. ⟨hal-01830889⟩
  • Y. El Gmili, P. Bonanno, S. Sundaram, Xiaojian Li, R. Puybaret, et al.. Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates. Optical Materials Express, OSA pub, 2017, 7 (2), ⟨10.1364/OME.7.000376⟩. ⟨hal-01830918⟩
  • Saiful Alam, Suresh Sundaram, Miryam Elouneg-Jamroz, Xin Li, Youssef El Gmili, et al.. InGaN/InGaN multiple-quantum-well grown on InGaN/GaN semi-bulk buffer for blue to cyan emission with improved optical emission and efficiency droop. Superlattices and Microstructures, Elsevier, 2017, 104, pp.291-297. ⟨10.1016/j.spmi.2017.02.036⟩. ⟨hal-01830907⟩
  • Saiful Alam, Suresh Sundaram, Xin Li, Miryam Jamroz, Youssef El Gmili, et al.. Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission. physica status solidi (a), Wiley, 2017, 214 (8), pp.1600868. ⟨10.1002/pssa.201600868⟩. ⟨hal-01830966⟩
  • Sarrah Amor, Ali Ahaitouf, Abdelaziz Ahaitouf, Jean-Paul Salvestrini, Abdallah Ougazzaden. Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n–GaN Schottky diode. Superlattices and Microstructures, Elsevier, 2017, 101, pp.529-536. ⟨10.1016/j.spmi.2016.11.011⟩. ⟨hal-01830928⟩
  • Renaud Puybaret, David Rogers, Youssef El Gmili, Suresh Sundaram, Matthew Jordan, et al.. Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates. Nanotechnology, Institute of Physics, 2017, 28 (19), pp.195304. ⟨10.1088/1361-6528/aa6a43⟩. ⟨hal-01830993⟩
  • J. Laifi, N. Chaaben, Y. El Gmili, Jean-Paul Salvestrini, A. Bchetnia, et al.. Study of cubic GaN clusters in hexagonal GaN layers and their dependence with the growth temperature. Vacuum, Elsevier, 2017, 138, pp.8-14. ⟨10.1016/j.vacuum.2017.01.007⟩. ⟨hal-01830926⟩
  • Taha Ayari, Chris Bishop, Matthew Jordan, Suresh Sundaram, Xin Li, et al.. Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications. Scientific Reports, Nature Publishing Group, 2017, 7 (1), ⟨10.1038/s41598-017-15065-6⟩. ⟨hal-01824881⟩
  • Neslihan Ayarcı Kuruoğlu, Orhan Özdemir, Kutsal Bozkurt, Suresh Sundaram, Jean-Paul Salvestrini, et al.. Dc and ac electrical response of MOCVD grown GaN in p-i-n structure, assessed through I – V and admittance measurement. Journal of Physics D: Applied Physics, IOP Publishing, 2017, 50 (50), ⟨10.1088/1361-6463/aa98b2⟩. ⟨hal-01831076⟩
  • Chris Bishop, Yacine Halfaya, Ali Soltani, Suresh Sundaram, Xin Li, et al.. Experimental Study and Device Design of NO, NO 2 , and NH 3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT. IEEE Sensors Journal, Institute of Electrical and Electronics Engineers, 2016, 16 (18), pp.6828-6838. ⟨10.1109/JSEN.2016.2593050⟩. ⟨hal-02385234⟩
  • Renaud Puybaret, Gilles Patriarche, Matthew B. Jordan, Suresh Sundaram, Youssef El Gmili, et al.. Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask. Applied Physics Letters, American Institute of Physics, 2016, 108 (10), pp.103105. ⟨10.1063/1.4943205⟩. ⟨hal-01220089⟩
  • Walid El-Huni, Anne Migan-Dubois, Zakaria Djebbour, Jean-Paul Salvestrini, Abdallah Ougazzaden. High-efficiency indium gallium nitride/Si tandem photovoltaic solar cells modeling using indium gallium nitride semibulk material: monolithic integration versus 4-terminal tandem cells. Progress in Photovoltaics, Wiley, 2016, 24 (11), pp.1436 - 1447. ⟨10.1002/pip.2807⟩. ⟨hal-01420488⟩
  • J. Laifi, N. Chaaben, H. Bouazizi, Najla Fourati, C. Zerrouki, et al.. Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE. Superlattices and Microstructures, Elsevier, 2016, 94, pp.30-38. ⟨10.1016/j.spmi.2016.02.037⟩. ⟨hal-01277597⟩
  • Houda Bouazizi, Noureddine Chaaben, Youssef El Gmili, Amor Bchetnia, Jean-Paul Salvestrini, et al.. Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree. Journal of Crystal Growth, Elsevier, 2016, 434, pp.72-76. ⟨10.1016/j.jcrysgro.2015.10.035⟩. ⟨hal-01256993⟩
  • Xin Li, Suresh Sundaram, Youssef El Gmili, Taha Ayari, Renaud Puybaret, et al.. Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy. Crystal Growth & Design, American Chemical Society, 2016, 16 (6), pp.3409-3415. ⟨10.1021/acs.cgd.6b00398⟩. ⟨hal-02385055⟩
  • Taha Ayari, Suresh Sundaram, Xin Li, Youssef El Gmili, Paul Voss, et al.. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN. Applied Physics Letters, American Institute of Physics, 2016, 108 (17), pp.171106. ⟨10.1063/1.4948260⟩. ⟨hal-02385100⟩
  • S. Sundaram, X Li, Y. El Gmili, P Bonanno, R Puybaret, et al.. Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates. Nanotechnology, Institute of Physics, 2016, 27 (11), pp.115602. ⟨10.1088/0957-4484/27/11/115602⟩. ⟨hal-02277942⟩
  • Rabeb Belghouthi, Jean-Paul Salvestrini, Mohamed Hichem Gazzeh, Christyves Chevallier. Analytical modeling of polarization effects in InGaN double hetero-junction p-i-n solar cells. Superlattices and Microstructures, Elsevier, 2016, 100, pp.168 - 178. ⟨10.1016/j.spmi.2016.09.016⟩. ⟨hal-01521110⟩
  • Muhammad Arif, Jean-Paul Salvestrini, Jérémy Streque, Matthew Jordan, Youssef El Gmili, et al.. Role of V-pits in the performance improvement of InGaN solar cells. Applied Physics Letters, American Institute of Physics, 2016, 109 (13), pp.133507. ⟨10.1063/1.4963817⟩. ⟨hal-02385085⟩
  • Yacine Halfaya, Chris Bishop, Ali Soltani, Sundaram Suresh, Vincent Aubry, et al.. Investigation of the performance of HEMT based NO, NO2 and NH3 exhaust. Sensors, MDPI, 2016, 16, pp.273. ⟨10.3390/s16030273⟩. ⟨hal-01277595⟩
  • Xin Li, G. Le Gac, Sophie Bouchoule, Youssef El-Gmili, G. Patriarche, et al.. Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm. Journal of Crystal Growth, Elsevier, 2015, 432, pp.37-44. ⟨10.1016/j.jcrysgro.2015.09.013⟩. ⟨hal-01212591⟩
  • Xin Li, Suresh Sundaram, Youssef El-Gmili, Frédéric Genty, Sophie Bouchoüle, et al.. MOVPE grown periodic AlN/BAlN heterostructure with high boron content. Journal of Crystal Growth, Elsevier, 2015, 414, pp.119-122. ⟨10.1016/j.jcrysgro.2014.09.030⟩. ⟨hal-01212596⟩
  • Sofiane Belhasene, Noor Alhuda Al Saqri, Dler Jameel, Abdelmadjid Mesli, Anthony Martinez, et al.. Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation. Electronics, Penton Publishing Inc., 2015, 4 (4), pp.1090-1100. ⟨10.3390/electronics4041090⟩. ⟨hal-01257014⟩
  • Charles Munson, Muhammad Arif, Jeremy Streque, Belahsene Sofiane, Anthony Martinez, et al.. Model of Ni-63 battery with realistic PIN structure. Journal of Applied Physics, American Institute of Physics, 2015, 118 (10), pp.105101. ⟨10.1063/1.4930870⟩. ⟨hal-01203762⟩
  • Suresh Sundaram, Youssef El Gmili, Renaud Puybaret, Li X., P.L. Bonanno, et al.. Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates. Applied Physics Letters, American Institute of Physics, 2015, 107 (113105), ⟨10.1063/1.4931132⟩. ⟨hal-01203766⟩
  • Sundaram Suresh, Renaud Puybaret, Xin Li, Youssef El Gmili, Jérémy Streque, et al.. High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices. physica status solidi (a), Wiley, 2015, 212 (4), pp.740-744. ⟨10.1002/pssa.201400278⟩. ⟨hal-01170562⟩
  • Xin Li, Suresh Sundaram, Youssef El Gmili, Tarik Moudakir, Frédéric Genty, et al.. BAlN thin layers for deep UV applications. physica status solidi (a), Wiley, 2015, 212 (4), pp.745-750. ⟨10.1002/pssa.201400199⟩. ⟨hal-01108100⟩
  • Jihed Laifi, Noureddine Chaaben, Houda Bouazizi, Najla Fourati, C. Zerrouki, et al.. Investigations of in situ reflectance of GaN layers grown by MOVPE on GaAs (001). Superlattices and Microstructures, Elsevier, 2015, 86, pp.472-482. ⟨10.1016/j.spmi.2015.08.015⟩. ⟨hal-01203774⟩
  • Xiaogai Li, S Sundaram, Pierre Disseix, G Le Gac, S Bouchoule, et al.. AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm. Optical Materials Express, OSA pub, 2015, 5 (2), pp.381-392. ⟨10.1364/OME.5.000380⟩. ⟨hal-01108085⟩
  • Chris Bishop, Jean-Paul Salvestrini, Yacine Halfaya, Sundaram Suresh, Youssef El Gmili, et al.. Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors. Applied Physics Letters, American Institute of Physics, 2015, 106 (24), pp.243504. ⟨10.1063/1.4922803⟩. ⟨hal-01170536⟩
  • Suresh Sundaram, Renaud Puybaret, Xin Li, Youssef El Gmili, Konstantinos Pantzas, et al.. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template. Journal of Applied Physics, American Institute of Physics, 2014, 116 (16), pp.163105-163105-6. ⟨10.1063/1.4900531⟩. ⟨hal-01077688⟩
  • Marc Fontana, Mustapha Abarkan, Jean-Paul Salvestrini. Calculation of the dispersion of the electro-optical and second harmonic coefficients from the refractive index dispersion. Optical Materials, Elsevier, 2014, 36 (4), pp.764-768. ⟨10.1016/j.optmat.2013.11.020⟩. ⟨hal-01077689⟩
  • Gaëlle Orsal, Youssef El Gmili, Nicolas Fressengeas, Jérémy Streque, Ryad Djerboub, et al.. Bandgap energy bowing parameter of strained and relaxed InGaN layers,. Optical Materials Express, OSA pub, 2014, 4 (5), pp.1030-1041. ⟨10.1364/OME.4.001030⟩. ⟨hal-01170545⟩
  • Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, et al.. Characteristics of the surface microstructures in thick InGaN layers on GaN. Optical Materials Express, OSA pub, 2013, 3, pp.1111-1118. ⟨10.1364/OME.3.001111⟩. ⟨hal-00815384⟩
  • Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, S. Sundaran, et al.. Multi-layered InGaN/GaN structure versus single InGaN layer for solar cells applications: a comparative study. Acta Materialia, Elsevier, 2013, 61, pp.6587-6596. ⟨10.1016/j.actamat.2013.07.041⟩. ⟨hal-00845424⟩
  • Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, et al.. Characteristics of the surface microstructures in thick InGaN layers on GaN. Optical Materials Express, OSA pub, 2013, 3, pp.1111-1118. ⟨10.1364/OME.3.001111⟩. ⟨hal-00872037⟩
  • Abdelaziz Ahaitouf, Hussein Srour, Sidi Ould Saad Hamady, Nicolas Fressengeas, Abdallah Ougazzaden, et al.. Interface states effects in GaN Schottky diodes. Thin Solid Films, Elsevier, 2012, 522, pp.345-351. ⟨10.1016/j.tsf.2012.08.029⟩. ⟨hal-00720225⟩
  • M. Abid, T. Moudakir, G. Orsal, S. Gautier, A. En Naciri, et al.. Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications. Applied Physics Letters, American Institute of Physics, 2012, 100 (5), pp.051101. ⟨10.1063/1.3679703⟩. ⟨hal-00666779⟩
  • Jean-Paul Salvestrini, Laurent Guilbert, Marc Fontana, Mustapha Abarkan, Stéphane Gille. Analysis and control of DC drift in LiNbO3-based Mach-Zehnder modulators. Journal of Lightwave Technology, Institute of Electrical and Electronics Engineers (IEEE)/Optical Society of America(OSA), 2011, 29 (10), pp.1522-1534. ⟨10.1109/JLT.2011.2136322⟩. ⟨hal-00642162⟩
  • A. Ahaitouf, Jean-Paul Salvestrini, H. Srour. Accurate surface potential determination in Schottky diodes by use of correlated current and capacitance voltage measurements. Application to n-InP. Journal of Semiconductors, Beijing : Chinese Institute of Electronics ; Bristol : IOP,, 2011, 32 (10), pp.104002. ⟨10.1088/1674-4926/32/10/104002⟩. ⟨hal-00643996⟩
  • H Srour, Jean-Paul Salvestrini, A Ahaitouf, S Gautier, T Moudakir, et al.. Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices. Applied Physics Letters, American Institute of Physics, 2011, 99 (22), pp.221101. ⟨10.1063/1.3662974⟩. ⟨hal-01277006⟩
  • Marco Cazzaniga, H.-C. Weissker, Simo Huotari, Tuomas Pylkkänen, Jean-Paul Salvestrini, et al.. Dynamical response function in sodium and aluminum from time-dependent density-functional theory. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2011, 84, pp.075109. ⟨10.1103/PhysRevB.84.075109⟩. ⟨hal-00696002⟩
  • A. Khireddine, Jean-Paul Salvestrini. Contribution separators wide margin processing of remote sensing data. IJCEE - International Journal of Computer and Electrical Engineering, International Academy Publishing (IAP), 2010, 2 (4), pp.1793-8163. ⟨10.7763/IJCEE.2010.V2.227⟩. ⟨hal-00473710⟩
  • C. Sperandio, A. Laachachi, D. Ruch, C. Poilâne, P. Bourson, et al.. Use of functionalized nanosilica to improve thermo-mechanical properties of epoxy adhesive joint bonding aluminium substrates. Journal of Nanoscience and Nanotechnology, American Scientific Publishers, 2010, 10 (4), pp.2844-2849. ⟨10.1166/jnn.2010.1458⟩. ⟨hal-00322143⟩
  • A. Khireddine, Jean-Paul Salvestrini. Signal processing techniques for the ultrasound characterization of complex materials. IJCEE - International Journal of Computer and Electrical Engineering, International Academy Publishing (IAP), 2009, 1 (5), pp.666-672. ⟨10.7763/IJCEE.2009.V1.103⟩. ⟨hal-00473709⟩
  • Mustapha Abarkan, Michel Aillerie, Jean-Paul Salvestrini, Marc Fontana, Edvard Kokanyan. Electro-optic and dielectric properties of Hafnium-doped congruent lithium niobate crystals. Applied Physics B - Laser and Optics, Springer Verlag, 2008, 92, pp.603-608. ⟨10.1007/s00340-008-3124-1⟩. ⟨hal-00311729⟩
  • T. Moudakir, G. Orsal, N. Maloufi, A. Sirenko, S. Gautier, et al.. Structural and morphological studies of GaN thin films grown on different oriented LiNbO3 substrates by MOVPE. European Physical Journal: Applied Physics, EDP Sciences, 2008, 43 (3), pp.295-299. ⟨10.1051/epjap:2008144⟩. ⟨hal-00181707⟩
  • T Moudakir, G Orsal, N Maloufi, Aa Sirenko, S Gautier, et al.. Structural and morphological studies of GaN thin films grown on different oriented LiNbO 3 substrates by MOVPE. European Physical Journal: Applied Physics, EDP Sciences, 2008, 43 (03), pp.295--299. ⟨hal-01277015⟩
  • M. Abarkan, Jean-Paul Salvestrini, M.D. Fontana, Mireille Cuniot-Ponsard. Frequency and wavelength dependencies of the electro-optic coefficients in SBN:60 single crystal. Applied Physics B - Laser and Optics, Springer Verlag, 2008, 91, pp.489-492. ⟨10.1007/s00340-008-3033-3⟩. ⟨hal-00322257⟩
  • A. Ougazzaden, T. Moudakir, T. Aggerstam, G. Orsal, Jean-Paul Salvestrini, et al.. GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE. physica status solidi (c), Wiley, 2008, 1-3, ⟨10.1002/pssc.200778490⟩. ⟨hal-00181670⟩
  • Rémy Claverie, Jean-Paul Salvestrini, Marc Fontana, Pascal Ney. New versatile and linear optical sensor based on electro-optical modulation and compensation. Review of Scientific Instruments, American Institute of Physics, 2008, 79, pp.123103. ⟨10.1063/1.3036979⟩. ⟨hal-00302942⟩
  • P. Segonds, B. Boulanger, B. Menaert, Julien Zaccaro, Jean-Paul Salvestrini, et al.. Optical characterization of YCa4O(BO3)3 and Nd:YCa4O(BO3)3 crystals. Optical Materials, Elsevier, 2007, 29 (8), pp.975-982. ⟨10.1016/j.optmat.2005.11.036⟩. ⟨hal-00186004⟩
  • Svetlana Bravina, Nicholas Morozovsky, Anna Morozovska, Stéphane Gille, Jean-Paul Salvestrini, et al.. Investigation of LiNbO3 and LiTaO3 single crystals for pyroelectric applications in the wide temperature range. Ferroelectrics, Taylor & Francis: STM, Behavioural Science and Public Health Titles, 2007, 353, pp.636-645. ⟨10.1080/00150190701368166⟩. ⟨hal-00186014⟩
  • Haitham Saadon, Nicéphore Théofanous, Michel Aillerie, Mustapha Abarkan, Jean-Paul Salvestrini, et al.. The electro-optic r22 coefficients and acoustic contributions in LiTaO3 crystal. Journal of Optics A: Pure and Applied Optics, IOP Publishing, 2006, 8, pp.677-682. ⟨10.1088/1464-4258/8/8/009⟩. ⟨hal-00186002⟩
  • Iwona Franke, Ewa Talik, Krystian Roleder, Katalin Polgár, Jean-Paul Salvestrini, et al.. Temperature stability of elastic and piezoelectric properties in LiNbO single crystal. Journal of Physics D: Applied Physics, IOP Publishing, 2005, 38 (24), pp.4308-4312. ⟨10.1088/0022-3727/38/24/007⟩. ⟨hal-00186006⟩
  • Mustapha Abarkan, Jean-Paul Salvestrini, Denis Pelenc, Marc Fontana. Electro-optic, thermo-optic, and dielectric properties of YCOB and Nd:YCOB crystals: comparative study. Journal of the Optical Society of America B, Optical Society of America, 2005, 22 (2), pp.398-406. ⟨10.1364/JOSAB.22.000398⟩. ⟨hal-00186010⟩
  • Jean-Paul Salvestrini, L. Lebrun, M. Abarkan, G. Sebald, M. Wang, et al.. High frequency response and wavelength dispersion of the linear electro-optic effect in PZN-PT (88/12) single crystal. Applied Physics B - Laser and Optics, Springer Verlag, 2005, 80 (4-5), pp.413-417. ⟨10.1007/s00340-005-1755-z⟩. ⟨hal-00186008⟩
  • Iwona Franke, Jean-Paul Salvestrini, Marc Fontana, Krystian Roleder. Complex elastic properties and piezoelectric activity in stoichiometric and congruent LiNbO3 single crystals. Ferroelectrics, Taylor & Francis: STM, Behavioural Science and Public Health Titles, 2004, 304 (1), pp.155-158. ⟨10.1080/00150190490457843⟩. ⟨hal-00186020⟩
  • Jean-Paul Salvestrini, Mustapha Abarkan, Marc Fontana. Comparative study of nonlinear crystals for electro-optic Q-switching of laser resonators. Optical Materials, Elsevier, 2004, 26, pp.449-458. ⟨10.1016/j.optmat.2003.10.009⟩. ⟨hal-00186026⟩
  • Mustapha Abarkan, Jean-Paul Salvestrini, Michel Aillerie, Marc Fontana. Frequency dispersion of electro-optical properties over a wide range by means of time-response analysis. Applied optics, Optical Society of America, 2003, 42 (13), pp.2346-2353. ⟨10.1364/AO.42.002346⟩. ⟨hal-00186028⟩
  • Jean-Paul Salvestrini, Mustapha Abarkan, Julien Zaccaro, Alain Ibanez. Enhancement of the electro-optical properties in hybrid organic-inorganic crystals by molecular engineering. Journal of the Optical Society of America B, Optical Society of America, 2003, 20 (8), pp.1661-1665. ⟨10.1364/JOSAB.20.001661⟩. ⟨hal-00186024⟩
  • M. Abarkan, Jean-Paul Salvestrini, M. D. Fontana, M. Aillerie. Frequency and wavelength dependences of electro-optic coefficients in inorganic crystals. Applied Physics B - Laser and Optics, Springer Verlag, 2003, 76, pp.765-769. ⟨10.1007/s00340-003-1196-5⟩. ⟨hal-00186027⟩
  • Julien Zaccaro, Jean-Paul Salvestrini, A. Ibanez, P. Ney, M. D. Fontana. Electric-field frequency dependence of Pockels coefficients in 2-amino-5-nitropyridium dihydrogen phosphate organic–inorganic crystals. Journal of the Optical Society of America B, Optical Society of America, 2000, 17 (3), pp.427-432. ⟨10.1364/JOSAB.17.000427⟩. ⟨hal-00186035⟩
  • P. Kolata, L. Guilbert, M.D. Fontana, Jean-Paul Salvestrini, Z. Czapla. Birefringence measurements by means of light deflection at domain wal ls in ferroelastic crystals. Journal of the Optical Society of America B, Optical Society of America, 2000, 17 (12), pp.1973-1979. ⟨10.1364/JOSAB.17.001973⟩. ⟨hal-00186030⟩
  • Laurent Guilbert, Jean-Paul Salvestrini, Z. Czapla. Indirect Pockels effect in rubidium hydrogen selenate: measurement of the large r42 coefficient. Journal of the Optical Society of America B, Optical Society of America, 2000, 17 (12), pp.1980-1985. ⟨10.1364/JOSAB.17.001980⟩. ⟨hal-00186033⟩
  • L. Guilbert, Jean-Paul Salvestrini, H. Hassan, M. D. Fontana. Combined effects due to phase, intensity and contrast in electrooptic modulation. Application to ferroelectric materials. IEEE Journal of Quantum Electronics, Institute of Electrical and Electronics Engineers, 1999, 35 (3), pp.273-280. ⟨hal-00186038⟩
  • A. Righi, Jean-Paul Salvestrini, P. Bourson, R. L. Moreira, M. D. Fontana. Electro-optic properties of LiKSO4 and LiK1−x Rbx SO4 crystals. Applied Physics B - Laser and Optics, Springer Verlag, 1998, 67 (5), pp.559-562. ⟨10.1007/s003400050545⟩. ⟨hal-00186044⟩
  • Jean-Paul Salvestrini, Julien Zaccaro, Alain Ibanez, Marc Fontana. Investigation of electrooptic modulation from organic-inorganic crystals. Applied Physics B - Laser and Optics, Springer Verlag, 1998, 67 (6), pp.761-763. ⟨10.1007/s003400050578⟩. ⟨hal-00186039⟩
  • L. Guilbert, Jean-Paul Salvestrini, P. Kolata, F. X. Abrial, M. D. Fontana, et al.. Optical characteristics of triclinic rubidium hydrogen selenate. Journal of the Optical Society of America B, Optical Society of America, 1998, 15 (3), pp.1009-1016. ⟨10.1364/JOSAB.15.001009⟩. ⟨hal-00186047⟩
  • P. Kolata, L. Guilbert, Jean-Paul Salvestrini, M. Aillerie, M.D. Fontana. Electro-optical and deflection properties of ammonium and rubidium hydrogen selenate crystals - Application to development of a low power Pockels cell. Annales de Physique, EDP Sciences, 1998, 23, pp.163-164. ⟨hal-00186042⟩
  • L. Guilbert, Jean-Paul Salvestrini, M. D. Fontana, Z. Czapla. Correlation between dielectric and electrooptic properties related to domains dynamics in RbHSeO crystals. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1998, 58 (5), pp.2523-2528. ⟨10.1103/PhysRevB.58.2523⟩. ⟨hal-00186045⟩
  • Jean-Paul Salvestrini, L. Guilbert, M. D. Fontana, Z. Czapla. Electrooptical properties of rubidium hydrogen selenate: influence of the DC electric field and origin of the large electrooptic coefficient. Journal of the Optical Society of America B, Optical Society of America, 1997, 14 (11), pp.2818-2822. ⟨10.1364/JOSAB.14.002818⟩. ⟨hal-00186050⟩
  • Jean-Paul Salvestrini, M. D. Fontana, B. Wyncke, F. Brehat. Comparative measurements of the frequency dependence of the electrooptical and dielectric coefficient in inorganic crystals. Nonlinear Optics, Informa UK (Taylor & Francis), 1997, 17, pp.271-280. ⟨hal-00186051⟩
  • Jean-Paul Salvestrini, L. Guilbert, M. D. Fontana, Z. Czapla. Electrooptic investigations in ammonium hydrogen selenate (NH4 HSeO4). Ferroelectrics, Taylor & Francis: STM, Behavioural Science and Public Health Titles, 1996, 185 (1), pp.257-260. ⟨10.1080/00150199608210527⟩. ⟨hal-00186463⟩
  • Jean-Paul Salvestrini, Marc Fontana, Michel Aillerie, Z. Czapla. New material with strong electro‐optic effect: Rubidium hydrogen selenate (RbHSeO4). Applied Physics Letters, American Institute of Physics, 1994, 64 (15), pp.1920-1922. ⟨10.1063/1.111742⟩. ⟨hal-00186053⟩

Directions of work or proceedings11 documents

  • Abdallah Ougazzaden, Suresh Sundaram, Phuong Vuong, Adama Mballo, Gilles Patriarche, et al.. Van der Waals epitaxy of nitride optoelectronic devices based on two-dimensional hBN. Gallium Nitride Materials and Devices XVI, Mar 2021, Online Only, 11686, SPIE, pp.39, 2021, ⟨10.1117/12.2584985⟩. ⟨hal-03350528⟩
  • Soufiane Karrakchou, Suresh Sundaram, Taha Ayari, Adama Mballo, Phuong Vuong, et al.. Side-by-side comparison of pre- and post-transferred LEDs grown on 2D hexagonal boron nitride onto arbitrary substrates. Gallium Nitride Materials and Devices XVI, Mar 2021, Online Only, 11686, SPIE, pp.32, 2021, ⟨10.1117/12.2577275⟩. ⟨hal-03350537⟩
  • Hassane Ouazzani Chahdi, Omar Helli, Nour Eddine Bourzgui, Leo Breuil, David Danovitch, et al.. Sensors based on AlGaN/GaN HEMT for fast H2 and O2 detection and measurement at high temperature. 2019 IEEE SENSORS, Oct 2019, Montreal, Canada. IEEE, pp.1-4, 2020, Proceedings of 18th IEEE Sensors Conference, IEEE SENSORS 2019, ⟨10.1109/SENSORS43011.2019.8956568⟩. ⟨hal-02451449⟩
  • Hassane Ouazzani Chahdi, Omar Helli, Nour Eddine Bourzgui, Leo Breuil, David Danovich, et al.. A Highly Porous and Conductive Composite Gate Electrode for NO, NO2, O2, H2 and NH3 Exhaust Gas Sensors. 237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), May 2020, Montreal, Canada. Journal of The Electrochemical Society, IMCS 07 - MEMS/NEMS, FET Sensors, and Resonators, 31, pp.2310, 2020, ECS Meeting Abstracts, Volume MA2020-01, ⟨10.1149/MA2020-01312310mtgabs⟩. ⟨hal-02879903⟩
  • Ali Ahaitouf, Yacine Halfaya, Suresh Sundaram, Simon Gautier, Paul Voss, et al.. Impact of the Sensor Temperature on Low Acetone Concentration Detection Using AlGaN/GaN HEMTs. 7th International Electronic Conference on Sensors and Applications, Nov 2020, 2020, ⟨10.3390/engproc0010005⟩. ⟨hal-03120961⟩
  • Nossikpendou Yves Sama, Andrew Hathcock, Dongyuan He, Thi Quynh Phuong Vuong, Soufiane Karrakchou, et al.. Investigation of Sc2O3 Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH sensor. 2019 IEEE SENSORS, Oct 2019, MONTRÉAL, Canada. pp.8956762, 2019, 2019 IEEE SENSORS, ⟨10.1109/SENSORS43011.2019.8956762⟩. ⟨hal-02870737⟩
  • Nossikpendou Yves Sama, Hafsa Bouhnane, Simon Gautier, Ali Ahaitouf, Jean Michel Matray, et al.. Investigation of Sc 2 O 3 Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor. 2019 IEEE SENSORS, Oct 2019, Montreal, France. IEEE, pp.1-4, 2019, ⟨10.1109/SENSORS43011.2019.8956762⟩. ⟨hal-02560200⟩
  • Sara El-Yahyaoui, Ali Ahaitouf, Sarah El Himer, Abdellah Mechaqrane, Jean-Paul Salvestrini, et al.. Indoor characterization of pyramid- and cone-type secondary optics. 15th International Conference on Concentrator Photovoltaic Systems (CPV-15), Mar 2019, Fes, France. pp.070003, 2019. ⟨hal-02282654⟩
  • Sara El-Yahyaoui, Ali Ahaitouf, Sarah El Himer, Abdellah Mechaqrane, Jean-Paul Salvestrini. Optimal design of a dielectric totally internally reflecting concentrator for CPV units. 2017 15th IEEE International New Circuits and Systems Conference (NEWCAS), Jun 2017, Strasbourg, France. IEEE, pp.397-400, 2017, ⟨10.1109/NEWCAS.2017.8010189⟩. ⟨hal-02283110⟩
  • Sarrah Amor, Ali Ahaitouf, Abdelaziz Ahaitouf, Jean-Paul Salvestrini, Abdallah Ougazzaden. Transport mechanisms in Schottky diodes realized on GaN. IOP Conference Series: Materials Science and Engineering, 186, 2017, ⟨10.1088/1757-899X/186/1/012001⟩. ⟨hal-01830948⟩
  • M.D. Fontana, G. Montemezzani, Jean-Paul Salvestrini. Proceedings of 8th European Conference on Applications of Polar Dielectrics (ECAPD-8). Guest Editorial. Ferroelectrics, 351, pp.IX-X, 2007, ⟨10.1080/00150190701351519⟩. ⟨hal-00186016⟩

Patents7 documents

  • Vincent Aubry, Abdallah Ougazzaden, Jean-Paul Salvestrini, Paul Voss, Yacine Halfaya. Detection sensor having a sensor cell with a high-electron mobility transistor and ring resonator(s). United States, Patent n° : US 20200278315A1. III-NITRIDE MATERIALS. 2020. ⟨hal-03414657⟩
  • Chris Bishop, Vincent Aubry, Abdallah Ougazzaden, Jean-Paul Salvestrini, Paul L. Voss. Detection sensor comprising a selective high-electron-mobility transistor for detecting a gaseous or liquid component. United States, Patent n° : 16341822. III-NITRIDE MATERIALS. 2020. ⟨hal-03350688⟩
  • Laetitia Pradere, Yacine Halfaya, Abdallah Ougazzaden, Paul L Voss, Jean-Paul Salvestrini, et al.. Capteur de détection de gaz d'un composant d'un gaz. France, N° de brevet: FR 1462278 2014. 2015. ⟨hal-01281130⟩
  • Chris Bishop, Abdallah Ougazzaden, Jean-Paul Salvestrini, P.L. Voss, Laetitia Pradere, et al.. Capteur Schottky de detection d’un constituant d’un gaz d’echappement. France, N° de brevet: FR 1462277 2014. 2014. ⟨hal-01281183⟩
  • M. Aillerie, P. Kolata, Jean-Paul Salvestrini, L. Guilbert, M. D. Fontana. Capteur thermooptique de temp ́erature utilisant la modulation ́electrique d'un signal optique. France, N° de brevet: 9609271. 1997. ⟨hal-00186275⟩
  • Jean-Paul Salvestrini, M. D. Fontana. Modulateur ́electrooptique. N° de brevet: 95-909822.9. 1995. ⟨hal-00186278⟩
  • Jean-Paul Salvestrini, M. D. Fontana. Dispositif de polarisation et de modulation ́electrooptique de lumiere, utilisant un cristal de faible dimension. N° de brevet: 9402015. 1994. ⟨hal-00186279⟩