CV Accueil - Archive ouverte HAL

	MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics Suresh Sundaram , Phuong Vuong , Adama Mballo , Taha Ayari , Soufiane Karrakchou APL Materials, 2021, 9 (6), pp.061101. ⟨10.1063/5.0049306⟩ Article dans une revue hal-03350328v1
	Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer Soufiane Karrakchou , Suresh Sundaram , Rajat Gujrati , Phuong Vuong , Adama Mballo ACS Applied Electronic Materials, 2021, 3 (6), pp.2614-2621. ⟨10.1021/acsaelm.1c00206⟩ Article dans une revue hal-03350389v1
	Single crystalline boron rich B(Al)N alloys grown by MOVPE P. Vuong , A. Mballo , S. Sundaram , G. Patriarche , Y. Halfaya Applied Physics Letters, 2020, 116 (4), pp.042101. ⟨10.1063/1.5135505⟩ Article dans une revue hal-02464319v1
	Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates Soufiane Karrakchou , Suresh Sundaram , Taha Ayari , Adama Mballo , Phuong Vuong Scientific Reports, 2020, 10 (1), pp.211. ⟨10.1038/s41598-020-77681-z⟩ Article dans une revue hal-03120983v1
	Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN Phuong Vuong , Suresh Sundaram , Adama Mballo , Gilles Patriarche , Stefano Leone ACS Applied Materials & Interfaces, 2020, 12 (49), pp.55460 - 55466. ⟨10.1021/acsami.0c16850⟩ Article dans une revue hal-03350674v1
	MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates Suresh Sundaram , Xin Li , Saiful Alam , Taha Ayari , Yacine Halfaya Journal of Crystal Growth, 2019, 507, pp.352-356. ⟨10.1016/j.jcrysgro.2018.10.060⟩ Article dans une revue hal-02282679v1
	Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride Suresh Sundaram , Xin Li , Yacine Halfaya , Taha Ayari , Gilles Patriarche Advanced Materials Interfaces, 2019, pp.1900207. ⟨10.1002/admi.201900207⟩ Article dans une revue hal-02160835v1
	Light-Emitting Diodes: Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019) Suresh Sundaram , Xin Li , Yacine Halfaya , Taha Ayari , Gilles Patriarche Advanced Materials Interfaces, 2019, 6 (16), pp.1970102. ⟨10.1002/admi.201970102⟩ Article dans une revue hal-02282666v1
	Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE Xin Li , Matthew B Jordan , Taha Ayari , Suresh Sundaram , Youssef El Gmili Scientific Reports, 2017, 7 (1), ⟨10.1038/s41598-017-00865-7⟩ Article dans une revue hal-01830854v1
	Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates Y. El Gmili , P. Bonanno , S. Sundaram , Xiaojian Li , R. Puybaret Optical Materials Express, 2017, 7 (2), ⟨10.1364/OME.7.000376⟩ Article dans une revue hal-01830918v1
	Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well Saiful Alam , Suresh Sundaram , Xin Li , Youssef El Gmili , Miryam Elouneg-Jamroz Superlattices and Microstructures, 2017, 112, pp.279-286. ⟨10.1016/j.spmi.2017.09.032⟩ Article dans une revue hal-01831029v1
	Improving InGaN heterojunction solar cells efficiency using a semibulk absorber M. Arif , W. Elhuni , J. Streque , S. Sundaram , S. Belahsene Solar Energy Materials and Solar Cells, 2017, 159, pp.405 - 411. ⟨10.1016/j.solmat.2016.09.030⟩ Article dans une revue hal-01420490v1
	Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications Taha Ayari , Chris Bishop , Matthew B Jordan , Suresh Sundaram , Xin Li Scientific Reports, 2017, 7 (1), ⟨10.1038/s41598-017-15065-6⟩ Article dans une revue hal-01824881v1
	Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates Renaud Puybaret , David Rogers , Youssef El Gmili , Suresh Sundaram , Matthew B Jordan Nanotechnology, 2017, 28 (19), pp.195304. ⟨10.1088/1361-6528/aa6a43⟩ Article dans une revue hal-01830993v1
	Role of V-pits in the performance improvement of InGaN solar cells Muhammad Arif , Jean-Paul Salvestrini , Jérémy Streque , Matthew B. Jordan , Youssef El Gmili Applied Physics Letters, 2016, 109 (13), pp.133507. ⟨10.1063/1.4963817⟩ Article dans une revue hal-02385085v1
	Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask Renaud Puybaret , Gilles Patriarche , Matthew B. Jordan , Suresh Sundaram , Youssef El Gmili Applied Physics Letters, 2016, 108 (10), pp.103105. ⟨10.1063/1.4943205⟩ Article dans une revue hal-01220089v1
	Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy Xin Li , Suresh Sundaram , Youssef El Gmili , Taha Ayari , Renaud Puybaret Crystal Growth & Design, 2016, 16 (6), pp.3409-3415. ⟨10.1021/acs.cgd.6b00398⟩ Article dans une revue hal-02385055v1
	Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates S. Sundaram , X Li , Y. El Gmili , P Bonanno , R Puybaret Nanotechnology, 2016, 27 (11), pp.115602. ⟨10.1088/0957-4484/27/11/115602⟩ Article dans une revue hal-02277942v1
	MOVPE grown periodic AlN/BAlN heterostructure with high boron content Xin Li , Suresh Sundaram , Youssef El-Gmili , Frédéric Genty , Sophie Bouchoüle Journal of Crystal Growth, 2015, 414, pp.119-122. ⟨10.1016/j.jcrysgro.2014.09.030⟩ Article dans une revue hal-01212596v1
	Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates Suresh Sundaram , Youssef El Gmili , Renaud Puybaret , Li X. , P.L. Bonanno Applied Physics Letters, 2015, 107 (113105), ⟨10.1063/1.4931132⟩ Article dans une revue hal-01203766v1
	AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm Xiaogai Li , S Sundaram , Pierre Disseix , G Le Gac , S Bouchoule Optical Materials Express, 2015, 5 (2), pp.381-392. ⟨10.1364/OME.5.000380⟩ Article dans une revue hal-01108085v1
	BAlN thin layers for deep UV applications Xin Li , Suresh Sundaram , Youssef El Gmili , Tarik Moudakir , Frédéric Genty physica status solidi (a), 2015, 212 (4), pp.745-750. ⟨10.1002/pssa.201400199⟩ Article dans une revue hal-01108100v1
	High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices Sundaram Suresh , Renaud Puybaret , Xin Li , Youssef El Gmili , Jérémy Streque physica status solidi (a), 2015, 212 (4), pp.740-744. ⟨10.1002/pssa.201400278⟩ Article dans une revue hal-01170562v1
	Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm Xin Li , G. Le Gac , Sophie Bouchoule , Youssef El-Gmili , G. Patriarche Journal of Crystal Growth, 2015, 432, pp.37-44. ⟨10.1016/j.jcrysgro.2015.09.013⟩ Article dans une revue hal-01212591v1
	Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template Suresh Sundaram , Renaud Puybaret , Xin Li , Youssef El Gmili , Konstantinos Pantzas Journal of Applied Physics, 2014, 116 (16), pp.163105-163105-6. ⟨10.1063/1.4900531⟩ Article dans une revue hal-01077688v1
	Multi-layered InGaN/GaN structure versus single InGaN layer for solar cells applications: a comparative study Y. El Gmili , G. Orsal , K. Pantzas , T. Moudakir , S. Sundaran Acta Materialia, 2013, 61, pp.6587-6596. ⟨10.1016/j.actamat.2013.07.041⟩ Article dans une revue hal-00845424v1
	Characteristics of the surface microstructures in thick InGaN layers on GaN Y. El Gmili , G. Orsal , K. Pantzas , A. Ahaitouf , T. Moudakir Optical Materials Express, 2013, 3, pp.1111-1118. ⟨10.1364/OME.3.001111⟩ Article dans une revue hal-00815384v1
	Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications M. Abid , T. Moudakir , G. Orsal , S. Gautier , A. En Naciri Applied Physics Letters, 2012, 100 (5), pp.051101. ⟨10.1063/1.3679703⟩ Article dans une revue hal-00666779v1

Jean Paul Salvestrini

Présentation

Publications

MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics

Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer

Single crystalline boron rich B(Al)N alloys grown by MOVPE

Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN

MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates

Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride

Light-Emitting Diodes: Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019)

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates

Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well

Improving InGaN heterojunction solar cells efficiency using a semibulk absorber

Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications

Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates

Role of V-pits in the performance improvement of InGaN solar cells

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates

MOVPE grown periodic AlN/BAlN heterostructure with high boron content

Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates

AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm

BAlN thin layers for deep UV applications

High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices

Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm

Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

Multi-layered InGaN/GaN structure versus single InGaN layer for solar cells applications: a comparative study

Characteristics of the surface microstructures in thick InGaN layers on GaN

Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications