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Number of documents

2

Pr. Jean Paul Salvestrini


under construction


Nicolas Fressengeas   

Journal articles2 documents

  • Gaëlle Orsal, Youssef El Gmili, Nicolas Fressengeas, Jérémy Streque, Ryad Djerboub, et al.. Bandgap energy bowing parameter of strained and relaxed InGaN layers,. Optical Materials Express, OSA pub, 2014, 4 (5), pp.1030-1041. ⟨10.1364/OME.4.001030⟩. ⟨hal-01170545⟩
  • A. Ahaitouf, H. Srour, S. Ould Saad Hamady, N. Fressengeas, A. Ougazzaden, et al.. Interface states effects in GaN Schottky diodes. Thin Solid Films, Elsevier, 2012, 522, pp.345-351. ⟨10.1016/j.tsf.2012.08.029⟩. ⟨hal-00720225⟩