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Number of documents

7

Pr. Jean Paul Salvestrini


under construction


42100   

Journal articles7 documents

  • M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, et al.. Improving InGaN heterojunction solar cells efficiency using a semibulk absorber. Solar Energy Materials and Solar Cells, Elsevier, 2017, 159, pp.405 - 411. ⟨10.1016/j.solmat.2016.09.030⟩. ⟨hal-01420490⟩
  • Saiful Alam, Suresh Sundaram, Miryam Elouneg-Jamroz, Xin Li, Youssef El Gmili, et al.. InGaN/InGaN multiple-quantum-well grown on InGaN/GaN semi-bulk buffer for blue to cyan emission with improved optical emission and efficiency droop. Superlattices and Microstructures, Elsevier, 2017, 104, pp.291 - 297. ⟨10.1016/j.spmi.2017.02.036⟩. ⟨hal-01830907⟩
  • Walid El-Huni, Anne Migan-Dubois, Zakaria Djebbour, Paul L. Voss, Jean-Paul Salvestrini, et al.. Optimization of semibulk InGaN-based solar cell using realistic modeling. Solar Energy, Elsevier, 2017, 157, pp.687 - 691. ⟨10.1016/j.solener.2017.08.074⟩. ⟨hal-01630066⟩
  • Muhammad Arif, Jean-Paul Salvestrini, Jérémy Streque, Matthew Jordan, Youssef El Gmili, et al.. Role of V-pits in the performance improvement of InGaN solar cells. Applied Physics Letters, American Institute of Physics, 2016, 109 (13), pp.133507. ⟨10.1063/1.4963817⟩. ⟨hal-02385085⟩
  • Walid El-Huni, Anne Migan-Dubois, Zakaria Djebbour, Jean-Paul Salvestrini, Abdallah Ougazzaden. High-efficiency indium gallium nitride/Si tandem photovoltaic solar cells modeling using indium gallium nitride semibulk material: monolithic integration versus 4-terminal tandem cells. Progress in Photovoltaics, Wiley, 2016, 24 (11), pp.1436 - 1447. ⟨10.1002/pip.2807⟩. ⟨hal-01420488⟩
  • Yacine Halfaya, Chris Bishop, A. Soltani, Sundaram Suresh, Vincent Aubry, et al.. Investigation of the performance of HEMT based NO, NO2 and NH3 exhaust. Sensors, MDPI, 2016, 16, pp.273. ⟨10.3390/s16030273⟩. ⟨hal-01277595⟩
  • Renaud Puybaret, Gilles Patriarche, Matthew B. Jordan, Suresh Sundaram, Youssef El Gmili, et al.. Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask. Applied Physics Letters, American Institute of Physics, 2016, 108 (10), pp.103105. ⟨10.1063/1.4943205⟩. ⟨hal-01220089⟩