Documentation
Français (FR)

Anglais (EN)

Jean Paul Salvestrini

9

Documents

Présentation

français
anglais

Publications

38042

	A cost-effective technology to improve power performance of nanoribbons GaN HEMTs Ali Soltani , Brahim Benbakhti , J.-C. Gerbedoen , Abdelkrim Khediri , Maher, Hassan Applied Physics Letters, 2022, 120 (4), pp.042102. ⟨10.1063/5.0080240⟩ Article dans une revue hal-03544158v1
	MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics Suresh Sundaram , Phuong Vuong , Adama Mballo , Taha Ayari , Soufiane Karrakchou APL Materials, 2021, 9 (6), pp.061101. ⟨10.1063/5.0049306⟩ Article dans une revue hal-03350328v1
	Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer Soufiane Karrakchou , Suresh Sundaram , Rajat Gujrati , Phuong Vuong , Adama Mballo ACS Applied Electronic Materials, 2021, 3 (6), pp.2614-2621. ⟨10.1021/acsaelm.1c00206⟩ Article dans une revue hal-03350389v1
	Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions Adama Mballo , Ashutosh Srivastava , Suresh Sundaram , Phuong Vuong , Soufiane Karrakchou Nanomaterials, 2021, 11 (1), pp.211. ⟨10.3390/nano11010211⟩ Article dans une revue hal-03117696v1
	Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN Phuong Vuong , Suresh Sundaram , Adama Mballo , Gilles Patriarche , Stefano Leone ACS Applied Materials & Interfaces, 2020, 12 (49), pp.55460 - 55466. ⟨10.1021/acsami.0c16850⟩ Article dans une revue hal-03350674v1
	Single crystalline boron rich B(Al)N alloys grown by MOVPE P. Vuong , A. Mballo , S. Sundaram , G. Patriarche , Y. Halfaya Applied Physics Letters, 2020, 116 (4), pp.042101. ⟨10.1063/1.5135505⟩ Article dans une revue hal-02464319v1
	Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates Soufiane Karrakchou , Suresh Sundaram , Taha Ayari , Adama Mballo , Phuong Vuong Scientific Reports, 2020, 10 (1), pp.211. ⟨10.1038/s41598-020-77681-z⟩ Article dans une revue hal-03120983v1
	Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates Y. El Gmili , P. Bonanno , S. Sundaram , Xiaojian Li , R. Puybaret Optical Materials Express, 2017, 7 (2), ⟨10.1364/OME.7.000376⟩ Article dans une revue hal-01830918v1
	Role of V-pits in the performance improvement of InGaN solar cells Muhammad Arif , Jean-Paul Salvestrini , Jérémy Streque , Matthew B. Jordan , Youssef El Gmili Applied Physics Letters, 2016, 109 (13), pp.133507. ⟨10.1063/1.4963817⟩ Article dans une revue hal-02385085v1