Nombre de documents

365


Article dans une revue114 documents

  • Alexandra Levtchenko, Raphaël Lachaume, Jérôme Michallon, Stéphane Collin, J Alvarez, et al.. Coupling Optical and Electrical Modelling for the study of a-Si:H-based nanowire Array Solar Cells. physica status solidi (c), Wiley, 2017, 〈10.1002/pssc.201700181〉. 〈hal-01589258〉
  • Artem Baranov, Alexander S. Gudovskikh, Dmitriy A. Kudryashov, Ivan A. Morozov, Alexey M. Mozharov, et al.. Influence of PE-ALD of GaP on the Silicon Wafers Quality. physica status solidi (a), Wiley, 2017, 〈10.1002/pssa.201700685〉. 〈hal-01629362〉
  • Tristan Carrere, Delfina Munoz, Coig Marianne, Christophe Longeaud, Jean-Paul Kleider. p-Type a-Si:H Doping Using Plasma Immersion Ion Implantation for Silicon Heterojunction Solar Cell Application. Solar RRL, 2017, 1 (2), 〈http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2367-198X/issues〉. 〈10.1002/solr.201600007〉. 〈hal-01631626〉
  • Rudolf Brüggemann, Ming Xu, José Alvarez, Mohamed Boutchich, Jean-Paul Kleider. Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements. Energy Procedia, Elsevier, 2017, 124, pp.10 - 17. 〈10.1016/j.egypro.2017.09.331〉. 〈hal-01631793〉
  • Rudolf Brüggemann, Ming Xu, José Alvarez, Mohamed Boutchich, Jean-Paul Kleider. Temperature dependence of the radiative recombination coefficient in crystalline silicon by spectral and modulated photoluminescence. physica status solidi (RRL) - Rapid Research Letters, Wiley-VCH Verlag, 2017, 11 (6), 〈10.1002/pssr.201700066〉. 〈hal-01631792〉
  • A. Roigé, J. Alvarez, Alexandre Jaffré, T. Desrues, D. Muñoz, et al.. Effects of photon reabsorption phenomena in confocal micro-photoluminescence measurements in crystalline silicon. Journal of Applied Physics, American Institute of Physics, 2017, 121 (6), 〈10.1063/1.4975476〉. 〈hal-01632885〉
  • Gwenaelle Hamon, Nicolas Vaissière, Romain Cariou, Raphaël Lachaume, José Alvarez, et al.. Plasma-enhanced chemical vapor deposition epitaxy of Si on GaAs for tunnel junction applications in tandem solar cells. Journal of photonics for energy, 2017, 7 (2), 〈10.1117/1.JPE.7.022504〉. 〈hal-01632906〉
  • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Ali Madouri, José Alvarez, et al.. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures. Journal of Physics: Condensed Matter, IOP Publishing, 2016, 28 (40), pp.404001. 〈10.1088/0953-8984/28/40/404001〉. 〈hal-01363551〉
  • Alexander Korovin, J Alvarez, Jean-Paul Kleider. Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells. Energy Procedia, Elsevier, 2016, 92, pp.103-108. 〈10.1016/j.egypro.2016.07.036〉. 〈hal-01469880〉
  • R. Lachaume, M. Foldyna, G. Hamon, J. Decobert, R. Cariou, et al.. Detailed analysis of III-V/epi-SiGe tandem solar cell performance including light trapping schemes. Solar Energy Materials and Solar Cells, Elsevier, 2016, 166, pp.276-285. 〈10.1016/j.solmat.2016.11.023〉. 〈hal-01416344〉
  • Martin Rudolph, Dana Stanescu, Jose Alvarez, Eddy Foy, Jean-Paul Kleider, et al.. The role of oxygen in magnetron-sputtered Ta3N5 thin films for the photoelectrolysis of water. Surface and Coatings Technology, Elsevier, 2016, 324, pp.620-625. 〈http://www.sciencedirect.com/science/article/pii/S0257897216308787〉. 〈10.1016/j.surfcoat.2016.09.007〉. 〈cea-01478261〉
  • Raphaël Lachaume, Christophe Longeaud, Jean-Paul Kleider. New insight into the modulated photocurrent technique using 2D full numerical simulations. physica status solidi (a), Wiley, 2016, 213 (7), pp.1848 - 1855. 〈10.1002/pssa.201532969〉. 〈hal-01297095〉
  • Paul Narchi, José Alvarez, Pascal Chrétien, Gennaro Picardi, Romain Cariou, et al.. Cross-Sectional Investigations on Epitaxial Silicon Solar Cells by Kelvin and Conducting Probe Atomic Force Microscopy: Effect of Illumination. Nanoscale Research Letters, SpringerOpen, 2016, 11 (1), pp.55. 〈10.1186/s11671-016-1268-1〉. 〈hal-01266681〉
  • Jean-Paul Kleider, Artem Baranov, A.S. Gudovskikh, Arouna Darga, E.V. Nikitina, et al.. Deep-level study of Ga(In)P(NAs) alloys grown on Si substrates. Journal of Physics: Conference Series, IOP Publishing, 2016, 741, pp.012077. 〈10.1088/1742-6596/741/1/012077〉. 〈hal-01469935〉
  • A Roigé, J Alvarez, Jean-Paul Kleider, I Martín, R Alcubilla. Microscale Spatially Resolved Characterization of Highly Doped Regions in Laser-Fired Contacts for High-Efficiency Crystalline Si Solar Cells. IEEE JOURNAL OF PHOTOVOLTAICS, 2015, 5, pp.545. 〈10.1109/JPHOTOV.2015.2392945〉. 〈hal-01231753〉
  • Fethullah Günes, Hakim Arezki, Debora Pierucci, David Alamarguy, José Alvarez, et al.. Tuning the work function of monolayer graphene on 4H-SiC (0001) with nitric acid. Nanotechnology, Institute of Physics, 2015, 26 (44), pp.445702. 〈10.1088/0957-4484/26/44/445702〉. 〈hal-01244484〉
  • Ming Xu, Alexandre Jaffré, J Alvarez, Jean-Paul Kleider, Apichat Jittrong, et al.. Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots . AIP Conference Proceedings, American Institute of Physics, 2015, 1649, pp.3. 〈10.1063/1.4913536〉. 〈hal-01239179〉
  • Hakim Arezki, Kuan-I Ho, Alexandre Jaffré, David Alamarguy, J Alvarez, et al.. Characterization of N-doped multilayer graphene grown on 4H-SiC (0001). AIP Conference Proceedings, American Institute of Physics, 2015, 1649, pp.8. 〈10.1063/1.4913537〉. 〈hal-01239163〉
  • Raphaël Lachaume, R. Cariou, J. Decobert, M. Foldyna, G. Hamon, et al.. Performance Analysis of AlxGa1-xAs/epi-Si(Ge) Tandem Solar Cells: A Simulation Study. Energy Procedia, Elsevier, 2015, 84, pp.41-46. 〈10.1016/j.egypro.2015.12.293〉. 〈hal-01249896〉
  • Jean-Paul Kleider, José Alvarez, Aurore Brézard-Oudot, Marie-Estelle Gueunier-Farret, Olga Maslova. Revisiting the theory and usage of junction capacitance: Application to high efficiency amorphous/crystalline silicon heterojunction solar cells. Solar Energy Materials and Solar Cells, Elsevier, 2015, 135, pp.8-16. 〈10.1016/j.solmat.2014.09.002〉. 〈hal-01206182〉
  • Daniel Lincot, Stéphane Collin, Jacky Even, Jean-Paul Kleider. Silicium, couches minces, pérovskites, photonique : de nouvelles avancées de la recherche sur les cellules photovoltaïques, Un bon signe pour la COP 21. Photoniques, EDP Sciences, 2015, 78, pp.23-27. 〈10.1051/photon/20157823 〉. 〈hal-01238786〉
  • O. Maslova, A. Brézard-Oudot, M.-E. Gueunier-Farret, J. Alvarez, J.-P. Kleider. Explicit analytical modeling of the low frequency a-Si:H/c-Si heterojunction capacitance: Analysis and application to silicon heterojunction solar cells. Journal of Applied Physics, American Institute of Physics, 2015, 118 (11), pp.114507. 〈10.1063/1.4931150〉. 〈hal-01310865〉
  • T. Carrere, R. Varache, D. Muñoz, Jean-Paul Kleider. Insertion of a thin highly doped crystalline layer in silicon heterojunction solar cells: Simulation and perspectives towards a highly efficient cell concept. Journal of Renewable and Sustainable Energy, AIP Publishing, 2015, 7 (1), pp.011202. 〈10.1063/1.4908189〉. 〈hal-01231778〉
  • David Reaux, José Alvarez, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Impact of defect-pool model parameters on the lifetime in c-Si/a-Si:H heterojunction solar cells. Energy Procedia, Elsevier, 2015, 77, pp.153-158. 〈10.1016/j.egypro.2015.07.023〉. 〈hal-01188802〉
  • Tristan Carrere, Renaud Varache, Jérôme Le Perchec, Christine Denis, Delfina Muñoz, et al.. Silicon bulk issues during processing of homo-heterojunction solar cells. Energy Procedia, Elsevier, 2015, 77, pp.451-457. 〈10.1016/j.egypro.2015.07.064〉. 〈hal-01232094〉
  • M. Boutchich, H. Arezki, D. Alamarguy, K.-I. Ho, H. Sediri, et al.. Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate. Applied Physics Letters, American Institute of Physics, 2014, 105 (23), pp.233111 - 233111-5. 〈10.1063/1.4903866〉. 〈hal-01099354〉
  • S. Gaiaschi, R. Ruggeri, E.V. Johnson, P. Bulkin, P. Chapon, et al.. Structural properties of hydrogenated microcrystalline silicon–carbon alloys deposited by Radio Frequency Plasma Enhanced Chemical Vapor Deposition: Effect of microcrystalline silicon seed layer and methane flow rate. Thin Solid Films, Elsevier, 2014, 550, pp.312-318. 〈10.1016/j.tsf.2013.11.081〉. 〈hal-01099597〉
  • José Alvarez, M. Boutchich, Jean-Paul Kleider, T. Teraji, Y. Koide. Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging. Journal of Physics D: Applied Physics, IOP Publishing, 2014, 47 (35), pp.355102. 〈10.1088/0022-3727/47/35/355102〉. 〈hal-01099593〉
  • O. Maslova, A. Brézard-Oudot, M.E. Gueunier-Farret, J. Alvarez, W. Favre, et al.. Temperature and bias dependence of hydrogenated amorphous silicon – crystalline silicon heterojunction capacitance: the link to band bending and band offsets. Canadian Journal of Physics, NRC Research Press, 2014, 92 (7/8), pp.690-695. 〈10.1139/cjp-2013-0544〉. 〈hal-01099596〉
  • Renaud Varache, Jean-Paul Kleider, Marie-Estelle Gueunier-Farret, Lars Korte. Silicon heterojunction solar cells: optimization of emitter and contact properties from analytical calculation and numerical simulation. Materials Science and Engineering: B, Elsevier, 2013, 178 (9), pp.593-598. 〈10.1016/j.mseb.2012.11.011〉. 〈hal-00931269〉
  • Silvia Martin de Nicolas, J. Coignus, Wilfried Favre, Jean-Paul Kleider, D. Munoz. n-type a-Si:H layers applied to the back side of heterojunction solar cells: Experimental and simulation analysis. Solar Energy Materials and Solar Cells, Elsevier, 2013, 115, pp.129-137. 〈10.1016/j.solmat.2013.03.010〉. 〈hal-00931268〉
  • Olga Maslova, Aurore Brézard-Oudot, Marie-Estelle Gueunier-Farret, José Alvarez, Wilfried Favre, et al.. Understanding inversion layers and band discontinuities in hydrogenated amorphous silicon/crystalline silicon heterojunctions from the temperature dependence of the capacitance. Applied Physics Letters, American Institute of Physics, 2013, 103 (18), pp.183907 - 183907-4. 〈10.1063/1.4826920〉. 〈hal-00931277〉
  • Pratish Mahtani, Renaud Varache, Bastien Jovet, Christophe Longeaud, Jean-Paul Kleider, et al.. Light induced changes in the amorphous - crystalline silicon heterointerface. Journal of Applied Physics, American Institute of Physics, 2013, 114 (12), pp.124503 - 124503-10. 〈10.1063/1.4821235〉. 〈hal-00931270〉
  • Mohamed Boutchich, Alexandre Jaffré, David Alamarguy, José Alvarez, A. Barras, et al.. Characterization of graphene oxide reduced through chemical and biological processes. Journal of Physics: Conference Series, IOP Publishing, 2013, 433 (1), pp.012001. 〈10.1088/1742-6596/433/1/012001〉. 〈hal-00931274〉
  • Olga Maslova, Aurore Brézard-Oudot, Wilfried Favre, José Alvarez, A.S. Gudovskikh, et al.. Modeling of capacitance spectroscopy of (p) a-Si:H/(n) c-Si interfaces. physica status solidi (c), Wiley, 2012, 9 (6), pp.1481-1483. 〈10.1002/pssc.201100761〉. 〈hal-00778954〉
  • Mohamed Boutchich, José Alvarez, Djicknoum Diouf, Pere Roca I Cabarrocas, Meiyong Liao, et al.. Amorphous silicon diamond based heterojunctions with high rectification ratio. Journal of Non-Crystalline Solids, Elsevier, 2012, 358 (17), pp.2110-2113. 〈10.1016/j.jnoncrysol.2011.12.067〉. 〈hal-00778949〉
  • Djicknoum Diouf, Jean-Paul Kleider, Irène Ngo, Marie-Estelle Gueunier-Farret, José Alvarez. Nanowire solar cells using hydrogenated amorphous silicon: a modeling study. physica status solidi (a), Wiley, 2012, 209 (6), pp.1026-1030. 〈10.1002/pssa.201100756〉. 〈hal-00778953〉
  • Renaud Varache, Jean-Paul Kleider, Wilfried Favre, Lars Korte. Calculation and measurement of the band-bending in crystalline silicon as an optimization tool for silicon heterojunction solar cells. Journal of Applied Physics, American Institute of Physics, 2012, 112 (12), pp.123717. 〈hal-00778961〉
  • Arouna Darga, Wilfried Favre, Morgane Fruzzetti, Jean-Paul Kleider, Boris Morel, et al.. Study of the electronic properties of wide band gap CIGSe solar cells: Influence of copper off-stoichiometry. Journal of Non-Crystalline Solids, Elsevier, 2012, 358 (17), pp.2428-2430. 〈10.1016/j.jnoncrysol.2012.01.020〉. 〈hal-00778952〉
  • Olga Maslova, Marie-Estelle Gueunier-Farret, José Alvarez, A.S. Gudovskikh, E.I Terukov, et al.. Space charge capacitance spectroscopy in amorphous silicon Schottky diodes: Theory, modeling, and experiments. Journal of Non-Crystalline Solids, Elsevier, 2012, 358 (17), pp.2007-2010. 〈10.1016/j.jnoncrysol.2012.01.053〉. 〈hal-00778950〉
  • Basia Halliop, Marie-France Salaün, Wilfried Favre, Renaud Varache, Marie-Estelle Gueunier-Farret, et al.. Interface properties of amorphous-crystalline silicon heterojunctions prepared using DC saddle-field PECVD. Journal of Non-Crystalline Solids, Elsevier, 2012, 358 (17), pp.2227-2231. 〈hal-00778948〉
  • Renaud Varache, Wilfried Favre, Lars Korte, Jean-Paul Kleider. Influence of the amorphous/crystalline silicon heterostructure properties on planar conductance measurements. Journal of Non-Crystalline Solids, Elsevier, 2012, 358 (17), pp.2236-2240. 〈10.1016/j.jnoncrysol.2011.11.023〉. 〈hal-00778951〉
  • Irène Ngo, Marie-Estelle Gueunier-Farret, José Alvarez, Jean-Paul Kleider. Modelling on c-Si/a-Si:H wire solar cells: some key parameters to optimize the photovoltaic performance. EPJ Photovoltaics, EDP sciences, 2012, 3, 30102 (6p.). 〈10.1051/epjpv/2012007〉. 〈hal-00778955〉
  • Caspar Leendertz, N. Mingirulli, T.F. Schulze, Jean-Paul Kleider, Bernd Rech, et al.. Discerning passivation mechanisms at a-Si:H/c-Si interfaces by means of photoconductance measurements. Applied Physics Letters, American Institute of Physics, 2011, 98 (20), pp.202108 - 202108-3. 〈10.1063/1.3590254〉. 〈hal-00710735〉
  • Foudil Dadouche, Olivier Bethoux, Jean-Paul Kleider. New silicon thin-film technology associated with original DC-DC converter: An economic alternative way to improve photovoltaic systems efficiencies. Energy, Elsevier, 2011, 36 (3), pp.1749-1757. 〈10.1016/j.energy.2010.12.054〉. 〈hal-00710738〉
  • Yrebegnan Soro, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Structural and electronic properties of hydrogenated polymorphous silicon films deposited at high rate. Journal of Applied Physics, American Institute of Physics, 2011, 109 (2), 023713 (10 p.). 〈10.1063/1.3536474〉. 〈hal-00710726〉
  • Jean-Paul Kleider, José Alvarez, Martin Labrune, Pere Roca I Cabarrocas, Olga Alexandrovna Maslova, et al.. Characterization of silicon heterojunctions for Solar Cells. Nanoscale Research Letters, SpringerOpen, 2011, 6, pp.152. 〈10.1186/1556-276X-6-152〉. 〈hal-00641696〉
  • José Alvarez, Irène Ngo, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Linwei Yu, et al.. Conductive-probe atomic force microscopy characterization of silicon nanowires. Nanoscale Research Letters, SpringerOpen, 2011, 6, pp.110. 〈10.1186/1556-276X-6-110〉. 〈hal-00710727〉
  • Wilfried Favre, Jean-Paul Kleider, D Munoz, S. Martin-De-Nicolas, P.-J. Ribeyron. Spatially resolved lifetime measurements of silicon heterojunctions from the modulated photoluminescence technique. physica status solidi (c), Wiley, 2011, 8 (3), pp.775-778. 〈10.1002/pssc.201000286〉. 〈hal-00710728〉
  • José Alvarez, Jean-Paul Kleider, R. Trotta, A. Polimeni, M. Capizzi, et al.. Giant and reversible enhancement of the electrical resistance of GaAs1−xNx by hydrogen irradiation. Physical Review B : Condensed matter and materials physics, American Physical Society, 2011, 84 (8), pp.085331. 〈10.1103/PhysRevB.84.085331〉. 〈hal-00710737〉
  • Foudil Dadouche, Olivier Bethoux, Marie-Estelle Gueunier-Farret, Erik Johnson, Pere Roca I Cabarrocas, et al.. Geometrical optimization and electrical performance comparison of thin-film tandem structures based on pm-Si:H and µc-Si:H using computer simulation. EPJ Photovoltaics, EDP sciences, 2011, 2, pp.20301. 〈10.1051/pvd/2011001〉. 〈hal-00642129〉
  • Olga Alexandrovna Maslova, José Alvarez, E.V. Gushina, Wilfried Favre, Marie-Estelle Gueunier-Farret, et al.. Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions. Applied Physics Letters, American Institute of Physics, 2010, 97 (25), pp.252110. 〈hal-00557102〉
  • A.S. Gudovskikh, Jean-Paul Kleider, N.A. Kalyuzhnyy, V.M. Lantratov, S.A. Mintairov. Band structure at heterojunction interfaces of GaInP solar cells. Solar Energy Materials and Solar Cells, Elsevier, 2010, 94 (11), pp.1953-1958. 〈hal-00555232〉
  • Djicknoum Diouf, Jean-Paul Kleider, T. Desrues, P.-J. Ribeyron. 2D simulations of interdigitated back contact heterojunctions solar cells based on n-type crystalline silicon. physica status solidi (c), Wiley, 2010, 7 (3), pp.1033-1036. 〈hal-00555230〉
  • A.G Kazanskii, E.I Terukov, P.A Forsh, Jean-Paul Kleider. Photoconductivity of two-phase hydrogenated silicon films. Semiconductors, 2010, 44, pp.494-497. 〈hal-00555231〉
  • Wilfried Favre, M. Labrune, Foudil Dadouche, A.S. Gudovskikh, Pere Roca I Cabarrocas, et al.. Study of the interfacial properties of amorphous Silicon/n-type crystalline Silicon heterojunction through static coplanar conductance measurements. physica status solidi (c), Wiley, 2010, 7 (3), pp.1037-1040. 〈hal-00555226〉
  • T. Desrues, P.-J. Ribeyron, A. Vandenheynde, S. Ozanne, Florent Souche, et al.. B-Doped a-Si:H contact improvement on silicon heterojunctions solar cells and interdigitated back contact structure. physica status solidi (c), Wiley, 2010, 7 (3), pp.1011-1015. 〈hal-00555227〉
  • E.V. Johnson, Foudil Dadouche, Marie-Estelle Farret-Gueunier, Jean-Paul Kleider, Pere Roca I Cabarrocas. Open-circuit voltage increase dynamics in high and low deposition rate polymorphous silicon solar cells. physica status solidi (a), Wiley, 2010, 207 (3), pp.691-694. 〈hal-00555228〉
  • Christophe Longeaud, Julien Schmidt, R.R. Koropecki, Jean-Paul Kleider. Determination of hydrogenated amorphous silicon density of states parameters from photoconductivity measurements. Journal of Optoelectronics and Advanced Materials, 2009, 11 (9), pp.1064-1071. 〈hal-00763198〉
  • Djicknoum Diouf, Jean-Paul Kleider, T. Desrues, P.-J. Ribeyron. Study of interdigitated back contact silicon heterojonction solar cells by two dimensional numerical simulations. Materials Science and Engineering: B, Elsevier, 2009, 159, pp. 291-294. 〈hal-00445960〉
  • Rémy Chouffot, Aurore Brézard, Jean-Paul Kleider, R. Brüggemann, M. Labrune, et al.. Modulated photoluminescence as an effective lifetime measurement method : application to a-Si:H/c-Si heterojunction solar cells. Materials Science and Engineering: B, Elsevier, 2009, 159, pp. 186-189. 〈hal-00445959〉
  • Christophe Longeaud, Jean-Paul Kleider, P. Kaminski, R. Kozlowski, M. Miczuga. Characterization of defect levels in semi−insulating 6H−SiC by means of photoinduced transient spectroscopyand modulated photocurrent technique. Journal of Physics: Condensed Matter, IOP Publishing, 2009, 21, pp. 045801-045815. 〈hal-00445958〉
  • Jean-Paul Kleider, Rémy Chouffot, A.S. Gudovskikh, Pere Roca I Cabarrocas, M. Labrune, et al.. Electronic and structural properties of the amorphous/crystalline silicon interface. Thin Solid Films, Elsevier, 2009, 517, pp. 6386-6391. 〈hal-00445964〉
  • M. Suproniuk, P. Kaminski, M. Miczuga, M. Pawlowski, R. Kozlowski, et al.. An intelligent measurement system for diagnosing of semi-insulating materials by photoinduced transient spectroscopy. Przeglad Elektrotechniczny , Wydawnictwo Czasopism i Ksia̜żek Technicznych Sigma, 2009, pp.93-98. 〈hal-00763193〉
  • A.S. Gudovskikh, Jean-Paul Kleider, Rémy Chouffot, N.A. Kalyuzhnyy, S.A. Mintairov, et al.. III-phosphides heterojunction solar cell interface properties from admittance spectroscopy. Journal of Physics D: Applied Physics, IOP Publishing, 2009, 42, pp. 165307-165315. 〈hal-00445963〉
  • José Alvarez, M. Liao, Jean-Paul Kleider, Y. Koide, M. Imura. Ultraviolet Detectors Based on Ultraviolet–Ozone Modified Hydrogenated Diamond Surfaces. Japanese Journal of Applied Physics, part 2 : Letters, Japan Society of Applied Physics, 2009, 2, pp. 065501-065503. 〈hal-00445962〉
  • A.S. Gudovskikh, Rémy Chouffot, Jean-Paul Kleider, N.A. Kaluzhniy, V. Lantratov, et al.. New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements. Thin Solid Films, Elsevier, 2008, 516, pp.6786. 〈hal-00350881〉
  • Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Polymorphous silicon thin films deposited at high rate: transport properties and density of states. Thin Solid Films, Elsevier, 2008, 516, pp.6888. 〈hal-00350886〉
  • P. Leempoel, P. Descamps, T. Kervyn de Meerendré, J. Charliac, Pere Roca I Cabarrocas, et al.. Distributed Electron Cyclotron Resonance plasma: a technology for large area deposition of device quality a-Si:H at very high rate. Thin Solid Films, Elsevier, 2008, 516, pp.6853. 〈hal-00350890〉
  • Jean-Paul Kleider, A.S. Gudovskikh, Pere Roca I Cabarrocas. Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements. Applied Physics Letters, American Institute of Physics, 2008, 92, pp.162101. 〈hal-00350871〉
  • Rémy Chouffot, Samah Ibrahim, R. Brüggemann, A.S. Gudovskikh, Jean-Paul Kleider, et al.. Comparison of photoluminescence and capacitance spectroscopies as efficient tools for interface characterisation of heterojunction solar cells. Journal of Non-Crystalline Solids, Elsevier, 2008, 354, pp.2416. 〈hal-00350778〉
  • Jean-Paul Kleider, Yrebegnan Moussa Soro, Rémy Chouffot, A.S. Gudovskikh, Pere Roca I Cabarrocas, et al.. High interfacial conductivity at amorphous silicon/crystalline silicon heterojunctions. Journal of Non-Crystalline Solids, Elsevier, 2008, 354, pp.2441. 〈hal-00350786〉
  • Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Device grade hydrogenated polymorphous silicon deposited at high rates. Journal of Non-Crystalline Solids, Elsevier, 2008, 354, pp.2092. 〈hal-00350767〉
  • C. Godet, Jean-Paul Kleider, A.S. Gudovskikh. Electric field-controlled sign of the capacitance in metal-carbon nitride-metal devices. Journal of Non-Crystalline Solids, Elsevier, 2008, 354, pp.2637. 〈hal-00350732〉
  • J.A. Schmidt, Christophe Longeaud, R.R. Koropecki, R. Arce, Jean-Paul Kleider. Modulated photoconductivity in the high and low frequency regimes. Journal of Non-Crystalline Solids, Elsevier, 2008, 354, pp.2914. 〈hal-00350791〉
  • M. Liao, Y. Koide, José Alvarez, M. Imura, Jean-Paul Kleider. Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors. Physical Review B : Condensed matter and materials physics, American Physical Society, 2008, 78 (4), pp.045112. 〈10.1103/PhysRevB.78.045112〉. 〈hal-00763137〉
  • T.H. Dao, Marie-Estelle Gueunier-Farret, D. Daineka, P. Bulkin, Pere Roca I Cabarrocas, et al.. Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by ECR. Thin Solid Films, Elsevier, 2007, 515, pp.7650-7653. 〈hal-00322079〉
  • A.S. Gudovskikh, Samah Ibrahim, Jean-Paul Kleider, J. Damon-Lacoste, Pere Roca I Cabarrocas, et al.. Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance-voltage measurements: capabilities and limits. Thin Solid Films, Elsevier, 2007, 515, pp.7481-7485. 〈hal-00322077〉
  • Alexander Gudovskikh, Jean-Paul Kleider. Capacitance spectroscopy of amorphous/crystalline silicon heterojunction solar cells at forward bias and under illumination. Applied Physics Letters, American Institute of Physics, 2007, 90, pp.034104. 〈hal-00322070〉
  • V.L. Berkovits, A.V. Ziminov, A.G. Kazanskii, A.G. Kolos'Ko, E.I. Terukov, et al.. Influence of the molecular structure of copper phtalocyanines on their ordering in thin films and, photoluminescence and absorption spectra. Physics of the Solid State, American Institute of Physics, 2007, 49, pp.272-277. 〈hal-00322069〉
  • Christian Godet, Jean-Paul Kleider, A. Gudovskikh. Scaling analysis of field-enhanced bandtail hopping transport in amorphous carbon nitride. physica status solidi (b), Wiley, 2007, 244 (6), pp.2081-2099. 〈10.1002/pssb.200642043〉. 〈hal-00322073〉
  • C. Godet, Jean-Paul Kleider, A.S. Gudovskikh. Frequency scaling of ac hopping transport in amorphous carbon nitride. Diamond and Related Materials, Elsevier, 2007, 16, pp.1799-1805. 〈hal-00322081〉
  • José Alvarez, Frédéric Houzé, Jean-Paul Kleider, M. Liao, Y. Koide. Local photoconductivity on diamond metal-semiconductor-metal photodetectors measured by conducting probe atomic force microscopy. Diamond and Related Materials, Elsevier, 2007, 16, pp.1074-1077. 〈hal-00320360〉
  • C. Godet, Jean-Paul Kleider. Disorder and localization in bandtail hopping transport: Experiments and concepts. Journal of Materials Science: Materials in Electronics, Springer Verlag, 2006, 17, pp.413-426. 〈hal-00321744〉
  • J. Damon-Lacoste, Pere Roca I Cabarrocas, P. Chatterjee, Y. Veschetti, A.S. Gudovskikh, et al.. About the efficiency limits of heterojunction solar cells. J. Non-Cryst. Solids, 2006, 352, pp.1928-1932. 〈hal-00349875〉
  • José Alvarez, Frédéric Houzé, Jean-Paul Kleider, M. Liao, Y. Koide. Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy. Superlattices and Microstructures, Elsevier, 2006, 40, pp.343-349. 〈hal-00320288〉
  • Alexander Gudovskikh, Jean-Paul Kleider, J. Damon-Lacoste, Pere Roca I Cabarrocas, Y. Veschetti, et al.. Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy. Thin Solid Films, Elsevier, 2006, 511-512, pp.385-389. 〈hal-00321738〉
  • A.S. Gudovskikh, Kleider J.P., J. Damon-Lacoste, Roca I Cabarrocas P., Y. Veschetti, et al.. Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy. Thin Solid Films, Elsevier, 2006, 511-512, pp.219-223. 〈hal-00081376〉
  • Y. Veschetti, J.C. Muller, J. Damon-Lacoste, Pere Roca I Cabarrocas, Alexander Gudovskikh, et al.. Optimisation of amorphous and polymorphous thin silicon layers for formation of front-side heterojunction solar cells on p-type crystalline silicon. Thin Solid Films, Elsevier, 2006, 511-512, pp.543-547. 〈hal-00321734〉
  • Y. Veschetti, J.C. Muller, A.S. Gudovskikh, J.P. Kleider, E. Rolland, et al.. Optimisation of amorphous and polymorphous silicon thin layers for formation of front-side heterojonction solar cells on p-type crystalline silicon substrate. Thin Solid Films, Elsevier, 2006, 511-512, pp. 543-547. 〈hal-00207846〉
  • J. Damon-Lacoste, Pere Roca I Cabarrocas, P. Chatterjee, Y. Veschetti, Alexander Gudovskikh, et al.. About the efficiency limits of heterojunction solar cells. Journal of Non-Crystalline Solids, Elsevier, 2006, 352, pp.1928-1932. 〈hal-00321740〉
  • J.A. Schmidt, Christophe Longeaud, R.R. Koropecki, Jean-Paul Kleider. Parameters of the density of states in the gap of defective semiconductors determined from photoconductivity measurements. Journal of Non-Crystalline Solids, Elsevier, 2006, 352, pp.1024-1027. 〈hal-00321725〉
  • Jean-Paul Kleider, Alexander Gudovskikh, C. Godet. DC and AC hopping transport in metal/amorphous carbon nitride/metal devices. Journal of Non-Crystalline Solids, Elsevier, 2006, 352, pp.1323-1326. 〈hal-00321741〉
  • Alexander Gudovskikh, Jean-Paul Kleider, R. Stangl. New approach to capacitance spectroscopy for interface characterization of a-Si:H/c-Si heterojunctions. Journal of Non-Crystalline Solids, Elsevier, 2006, 352, pp.1213-1216. 〈hal-00321743〉
  • Marie-Estelle Gueunier-Farret, Cyril Bazin, Jean-Paul Kleider, Christophe Longeaud, P. Bulkin, et al.. Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates. Journal of Non-Crystalline Solids, Elsevier, 2006, 352, pp.1913-1916. 〈hal-00321731〉
  • Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, F. Voigt, R. Brüggemann, G.H. Bauer, et al.. Transport properties and defects in silicon nanoparticles and effect of embedding in amorphous silicon layers. Journal of Non-Crystalline Solids, Elsevier, 2006, 352, pp.1101-1104. 〈hal-00321733〉
  • Christophe Longeaud, J.A. Schmidt, Jean-Paul Kleider. Determination of semiconductors band gap states parameters from photoconductivity measurements: I- Theoretical developments. Physical Review B : Condensed matter and materials physics, American Physical Society, 2006, 73, pp.235316. 〈hal-00321720〉
  • Frédéric Houzé, José Alvarez, Jean-Paul Kleider, P. Bergonzo, E. Snidero, et al.. Local electrical characterization of Schottky diodes on H-terminated diamond surfaces by conducting probe atomic force microscopy. Diamond and Related Materials, Elsevier, 2006, 15, pp.618-621. 〈hal-00320285〉
  • J.A. Schmidt, Christophe Longeaud, Jean-Paul Kleider. Light-intensity dependence of the steady state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors. Thin Solid Films, Elsevier, 2005, 493, pp.319-324. 〈hal-00321248〉
  • Alexander Gudovskikh, Jean-Paul Kleider, E.I. Terukov. Characterization of a-Si:H/c-Si interface by admittance spectroscopy. Semiconductors, 2005, 39, pp.903-909. 〈hal-00321250〉
  • M. Meaudre, Marie-Estelle Gueunier-Farret, R. Meaudre, Jean-Paul Kleider, S. Vignoli, et al.. Deep defects and their electron capture cross sections in polymorphous silicon-germanium thin films. Journal of Applied Physics, American Institute of Physics, 2005, 98, pp.33531. 〈hal-00321252〉
  • Marie-Estelle Gueunier, Christophe Longeaud, Jean-Paul Kleider. Modulated photocurrent in the recombination regime. European Physical Journal: Applied Physics, EDP Sciences, 2004, 26, pp.75-85. 〈hal-00320883〉
  • Alexander Gudovskikh, Jean-Paul Kleider, A. Froitzheim, W. Fuhs, E.I. Terukov. Investigations of a-Si:H/c-Si heterojunction solar cells interface properties. Thin Solid Films, Elsevier, 2004, 451-452, pp.345-348. 〈hal-00320873〉
  • José Alvarez, Alexander Gudovskikh, Jean-Paul Kleider, V. Afanasjev, V.V. Luchinin, et al.. Polycrystalline AlN films deposited at low temperature for selective UV detectors. Sensors and Actuators A: Physical , Elsevier, 2004, 113, pp.355-359. 〈hal-00321026〉
  • Jean-Paul Kleider, Christophe Longeaud, Marie-Estelle Gueunier. The modulated photocurrent technique: a powerful tool to investigate band gap states in silicon based thin films. Phys. stat. sol., 2004, 1, pp.1208-1226. 〈hal-00321029〉
  • Alexander Gudovskikh, Jean-Paul Kleider, V.P. Afanasjev, A.Z. Kazak-Kazakevich, A.P. Sazanov. Investigation of nc-Si inclusions behaviour in multilayer a-Si:H films obtained by layer by layer technique. Journal of Non-Crystalline Solids, Elsevier, 2004, 338-340, pp.135-138. 〈hal-00320870〉
  • Jean-Paul Kleider, Christophe Longeaud, Marie-Estelle Gueunier. Investigation of bandgap states using the modulated photocurrent technique in both low and high frequency regimes. Journal of Non-Crystalline Solids, Elsevier, 2004, 338-340, pp.390-399. 〈hal-00320874〉
  • M.S. Bresler, O.B. Gusev, E.I. Terukov, W. Fuhs, A. Froitzheim, et al.. Electroluminescence in amorphous-crystalline silicon heterostructures. Journal of Non-Crystalline Solids, Elsevier, 2004, 338-340, pp.440-443. 〈hal-00320876〉
  • S. Kumar, C. Godet, Alexander Gudovskikh, Jean-Paul Kleider, G. Adamopoulos, et al.. High-field transport in amorphous carbon and carbon nitride films. Journal of Non-Crystalline Solids, Elsevier, 2004, 338-340, pp.349-352. 〈hal-00320878〉
  • C. Guedj, N. Moussy, W. Rabaud, Pere Roca I Cabarrocas, S. Tchakarov, et al.. Uv-visible sensors based on polymorphous silicon. Journal of Non-Crystalline Solids, Elsevier, 2004, 338-340, pp.749-753. 〈hal-00320867〉
  • R. Brüggemann, S. Brehme, Jean-Paul Kleider, Marie-Estelle Gueunier, W. Bronner. Effects of proton irradiation on the electronic properties of microcrystalline silicon. Journal of Non-Crystalline Solids, Elsevier, 2004, 338-340, pp.477-480. 〈hal-00321028〉
  • José Alvarez, A. Godard, Jean-Paul Kleider, P. Bergonzo, D. Tromson, et al.. Very high UV-visible selectivity in polycrystalline CVD diamond films. Diamond and Related Materials, Elsevier, 2004, 13, pp.881-885. 〈hal-00321024〉
  • José Alvarez, Jean-Paul Kleider, E. Snidero, P. Bergonzo, D. Tromson, et al.. On the metastability of the surface conductivity in hydrogen-terminated polycrystalline CVD diamond. Diamond and Related Materials, Elsevier, 2004, 13, pp.751-754. 〈hal-00321021〉
  • Pere Roca I Cabarrocas, Z. Djebbour, J. Kleider, C. Longeaud, D. Mencaraglia, et al.. Hydrogen, microstructure and defect density in hydrogenated amorphous silicon. Journal de Physique I, EDP Sciences, 1992, 2 (10), pp.1979-1998. 〈10.1051/jp1:1992260〉. 〈jpa-00246677〉

Communication dans un congrès201 documents

  • Zakaria Djebbour, Walid El-Huni, Anne Migan-Dubois, Jean-Paul Kleider. Nouveau concept de cellules solaires tandem à 3 terminaux sur base de cellule solaire à contacts interdigités en face arrière. Journées Nationales du PhotoVoltaïque, Dec 2017, Dourdan, France. 〈hal-01630106〉
  • Alexandra Levtchenko, Raphaël Lachaume, Jérôme Michallon, Stéphane Collin, J Alvarez, et al.. Influence of electrical transport properties on performance of Si nanowire array solar cells assessed by optoelectrical modeling. E-MRS 2017 Spring Meeting, May 2017, Strasbourg, France. 〈hal-01632933〉
  • A.S. Gudovskikh, A.V. Uvarov, I.A. Morozov, Artem Baranov, D. A. Kudryashov, et al.. Si doped n-type GaP layers grown on Si wafers by low-temperature PE-ALD. Photovoltaic Technical Conference, PVTC 2017, May 2017, Marseille, France. 〈hal-01632928〉
  • Artem Baranov, Alexander S. Gudovskikh, I.A. Morozov, A. Mozharov, Ekaterina V. Nikitina, et al.. Characterization of GaP/Si heterojunctions by space charge capacitance measurements. E-MRS 2017 Spring Meeting, May 2017, Strasbourg, France. 〈hal-01632942〉
  • Alexander S. Gudovskikh, D. A. Kudryashov, I.A. Morozov, Artem Baranov, A.V. Uvarov, et al.. Low temperature plasma enhanced atomic layer deposition of GaP films on Si substrates. ICANS27, The 27th International Conference on Amorphous and Nanocrystalline Semiconductors, Aug 2017, Seoul, South Korea. 〈hal-01632966〉
  • Gwenaelle Hamon, Nicolas Vaissière, Romain Cariou, Wanghua Chen, Martin Foldyna, et al.. Low temperature plasma epitaxy of Silicon on III-V for tandem solar cells. International Conference on the Formation of Semiconductor Interfaces (ICFSI-16), Jul 2017, Hannover, Germany. 〈hal-01632964〉
  • Gwenaëlle Hamon, Nicolas Vaissière, Jean Decobert, Raphaël Lachaume, Romain Cariou, et al.. Direct Growth of Crystalline Silicon on GaAs by Low Temperature PECVD: Towards Hybrid Tunnel Junctions for III-V/Si Tandem Cells. 13th International Conference on Concentrator Photovoltaic Systems (CPV 13), May 2017, Ottawa, Canada. 〈hal-01632921〉
  • Artem Baranov, A.S. Gudovskikh, I. Morozov, A. Mozharov, Arouna Darga, et al.. Electronic properties of thin GaP layers grown on silicon wafers. Journées Nationales du Photovoltaïque (JNPV 2016), Nov 2016, Dourdan, France. 〈hal-01474776〉
  • Paul Narchi, J Alvarez, A Roigé, Pascal Chrétien, Martin Foldyna, et al.. Etude sur la tranche de cellules solaires en silicium cristallin à l'échelle nanométrique à l'aide de techniques de microscopie à sonde locale. Journées Nationales du Photovoltaïque (JNPV 2016), Nov 2016, Dourdan, France. 〈hal-01474736〉
  • Jean-Paul Kleider, J Alvarez, Raphaël Lachaume, Tristan Carrere, Delfina Muñoz. Silicon heterojunctions and homo-heterojunctions. French-Russian Workshop: Beyond silicon : heterojunctions and multijunctions solar cells, Dec 2016, Gif-sur-Yvette, France. 〈hal-01475783〉
  • David Alamarguy, Hakim Arezki, Fethullah Gunes, Alexandre Jaffré, José Alvarez, et al.. Etude du Dopage de Graphène Epitaxial sur SiC(0001) par Spectroscopies de Photoélectrons . ELSPEC'16, 7eme conférence francophone sur les spectroscopies d’électrons , May 2016, Meudon, France. 〈hal-01449031〉
  • Junkang Wang, Federico Ventosinos, Christophe Longeaud, Bastien Bruneau, D. Daineka, et al.. Study of Electronic Properties of Hydrogenated Amorphous Silicon Thin Film from SiH4/H2 using Tailored Voltage Waveforms. E-MRS 2016 Spring Meeting, May 2016, Lille, France. 〈hal-01363727〉
  • Martin Rudolph, D. Stanescu, J Alvarez, E. Foy, Jean-Paul Kleider, et al.. The role of oxygen in magnetron sputtered Ta3N5 films for water photoelectrolysis. E-MRS 2016 Spring Meeting, May 2016, Lille, France. 〈hal-01363717〉
  • A.S. Gudovskikh, I.A. Morozov, D. A. Kudryashov, E.V. Nikitina, A. S. Bukatin, et al.. Atomic layer deposition of gallium phosphide for silicon based photovoltaics. Photovoltaic Technical Conference, PVTC 2016, May 2016, Marseille, France. 〈hal-01363690〉
  • A.S. Gudovskikh, K. S. Zelentsov, Artem Baranov, D. A. Kudryashov, I.A. Morozov, et al.. Defect characterization of GaP/Si solar cells. E-MRS 2016 Spring Meeting, May 2016, Lille, France. 〈hal-01363693〉
  • Hakim Arezki, Mohamed Boutchich, Alexandre Jaffré, J Alvarez, Julien Chaste, et al.. Probing the electronic properties of CVD graphene superlattices. Nanotechnology Materials and Devices Conference (NMDC), 2016 IEEE, Sep 2016, Toulouse, France. 〈10.1109/NMDC.2016.7777071〉. 〈hal-01533988〉
  • Tristan Carrere, Renaud Varache, Raphaël Lachaume, Coig Marianne, Delfina Muñoz, et al.. Homo-hétérojonction en silicium : une nouvelle architecture pour des cellules à rendement record. Journées Nationales du Photovoltaïque , Nov 2016, Dourdan, France. 2016, 〈http://jnpv.geeps.centralesupelec.fr/index.php/sessions〉. 〈hal-01424637〉
  • Gwenaëlle Hamon, Jean Decobert, Nicolas Vaissière, Raphaël Lachaume, Romain Cariou, et al.. Direct Growth of Crystalline Silicon on GaAs by Low Temperature PECVD: Towards Hybrid Tunnel Junctions for III-V/Si Tandem Cells. Journées Nationales du Photovoltaïque (JNPV), Nov 2016, Dourdan, France. 2016, 〈http://jnpv.geeps.centralesupelec.fr/index.php/sessions〉. 〈hal-01424644〉
  • Raphaël Lachaume, Martin Foldyna, Gwenaëlle Hamon, Nicolas Vaissière, Romain Cariou, et al.. Modelling of multijunction cells. French-Russian Workshop, Dec 2016, Gif-Sur-Yvette, France. 2016. 〈hal-01416388〉
  • Raphaël Lachaume, Romain Cariou, Jean Decobert, Martin Foldyna, Gwenaelle Hamon, et al.. Realistic simulation of III-V/epi-SiGe tandem solar cells. COST Multiscale solar Workshop, Nov 2015, Valencia, Spain. 〈hal-01239075〉
  • Alexandra Levtchenko, Raphaël Lachaume, Jean-Paul Kleider, José Alvarez, Sana Laribi, et al.. Simulation électrique et optique de nanofils de Silicium en géométrie radiale pour des applications photovoltaïques. Journées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France. 〈hal-01238536〉
  • Jean Decobert, Romain Cariou, Kevin Louarn, Catherine Fortin, Raphaël Lachaume, et al.. SiGe Low Temperature Epitaxy by PECVD on III-V MOVPE Grown Material for High Efficiency Tandem Solar Cell Applications. 16th European Workshop on Metalorganic Vapour Phase Epitaxy, EWMOVPE XVI, Jun 2015, Lund, Sweden. 〈hal-01232098〉
  • Raphaël Lachaume, Christophe Longeaud, Jean-Paul Kleider. New insights into the modulated photocurrent technique using 2D full numerical simulations. 26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany. 〈hal-01232105〉
  • Tristan Carrere, A.-S. Ozanne, Delfina Munoz, Jean-Paul Kleider. a-Si:H doping by plasma immersion ion implantation for a-Si:H/c-Si heterojunction solar cells. 26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany. 〈hal-01232106〉
  • Olga Maslova, Raphaël Lachaume, J Alvarez, Jean-Paul Kleider. Interfaces in (p) a-Si:H/(n) c-Si heterojunctions: influence of (i) a-Si:H buffer layer and front electrode on capacitance-temperature dependencies and strong inversion layers. 26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany. 〈hal-01232109〉
  • Raphaël Lachaume, Romain Cariou, Jean Decobert, Martin Foldyna, Gwenaelle Hamon, et al.. Realistic modeling of tandem cells formed by low temperature PECVD epitaxy of silicon-germanium on gallium arsenide. E-MRS Spring Meeting 2015, May 2015, Lille, France. 〈hal-01232097〉
  • Mohamed Boutchich, Jean-Paul Kleider, Abdelkarim Ouerghi, Hong-Lee Younghee, Young Hee Lee, et al.. Characterization of graphene and applications to heterojunctions. International Conference on Novel Material : Engineering and Properties - Soleil 2015, Sep 2015, Saclay, France. 〈hal-01257911〉
  • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Fethullah Gunes, Ali Madouri, et al.. Electronic properties of CVD Graphene capped with p and n-type doped amorphous silicon. 26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany. 〈hal-01232115〉
  • Hakim Arezki, Mohamed Boutchich, Jean-Paul Kleider. Raman spectroscopy on Bi and Trilayer flakes of graphene. Nano-TN 2015, Feb 2015, Hammamet, Tunisia. 〈hal-01232095〉
  • Gwenaelle Hamon, Romain Cariou, Raphaël Lachaume, Jean Decobert, Kevin Louarn, et al.. Investigation of Hybrid Tunnel Junction Architectures for III-V/Si Tandem Solar Cells. 31st European Photovoltaic Solar Energy Conference and Exhibition (EU-PVSEC 2015), Sep 2015, Hamburg, Germany. pp.75-79, Proceedings of the 31st European Photovoltaic Solar Energy Conference and Exhibition. 〈10.4229/EUPVSEC20152015-1CO.10.4〉. 〈hal-01232634〉
  • Alexandre Jaffré, Hakim Arezki, Mohamed Boutchich, J Alvarez, Jean-Paul Kleider. Coupling on a confocal imaging system µ-Raman, µ-PL, AFM and electrical extensions at a sub micrometric scale. International Workshop on Nanostructure Characterization and Nanomaterials, Aug 2015, Bangkok, Thailand. 2015. 〈hal-01259190〉
  • Hakim Arezki, Mohamed Boutchich, Jean-Paul Kleider, J Alvarez, David Alamarguy, et al.. Work function engineering of doped Trilayer graphene grown on 4H-SiC (0001). ANM2015,6th International Conference on Advanced Nanomaterials, Jul 2015, Aveiro, Portugal. 〈hal-01257881〉
  • Ming Xu, Alexandre Jaffré, J Alvarez, Jean-Paul Kleider, Apichat Jittrong, et al.. Spatially resolved photoluminescence on multi stack InAs quantum dots. International Workshop on Nanostructures Characterization and Nanomaterials – Bangkok 2015, Aug 2015, Bangkok, Thailand. 〈hal-01257898〉
  • Ming Xu, Mohamed Boutchich, Igor Paul Sobkowicz, J Alvarez, Rudolf Brüggemann, et al.. Characterization of a-Si:H/c-Si heterojunction by temperature dependent modulated photoluminescence. 26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany. 〈hal-01239190〉
  • Raphaël Lachaume, Christophe Longeaud, Jean-Paul Kleider. New insights into the modulated photocurrent technique using 2D full numerical simulations. COST Multiscale solar Workshop 2015, Nov 2015, Valencia, Spain. 〈hal-01238544〉
  • Arouna Darga, Jean-Paul Kleider. Cellules PV d’aujourd’hui et du futur, évolution du marché mondial. Le marché solaire en Afrique, atouts et faiblesses, Jun 2015, Ouagadougou, Burkina Faso. 〈http://www.2ie-edu.org/africasolar-2015/〉. 〈hal-01253414〉
  • Alexandre Jaffré, J Alvarez, A Roigé, Jean-Paul Kleider. Introduction à la microscopie confocale et techniques de spectroscopie associées pour la caractérisation de matériaux pour l’électronique et le PV. Journées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France. 2015, 〈http://jnpv.geeps.centralesupelec.fr/〉. 〈hal-01259200〉
  • Raphaël Lachaume, Romain Cariou, Jean Decobert, Martin Foldyna, Gwenaëlle Hamon, et al.. Towards realistic simulation of the novel III-V/epi-Si tandem solar cell concept . Workshop Theory and Modeling for PV, Nov 2015, Marseille, France. 〈http://www.ipvf.fr/event/workshop-theory-and-modeling-for-pv/〉. 〈hal-01240827〉
  • Mohamed Boutchich, Hakim Arezki, David Alamarguy, K.I. Ho, Sediri Haikel, et al.. Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001). IRAGO 2014, Nov 2014, Tsukuba, Japan. Proceedings of the Irago Conference 2014, pp.7PM-4, 2014. 〈hal-01104492〉
  • M. Xu, Mohamed Boutchich, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, et al.. TEMPERATURE DEPENDENT PHOTOLUMINESCENCE IN SILICON BASED HETEROJUNCTION SOLAR CELL. EU PVSEC 2014, Sep 2014, Amsterdam, Netherlands. Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition, pp.1214-1217, 2014. 〈hal-01099586〉
  • Mohamed Boutchich, Hakim Arezki, David Alamarguy, K.I. Ho, Haikel Sediri, et al.. Doping and characterization of trilayer graphene on 4H-SiC (0001). International Workshop on Nanodevices and Materials, Nov 2014, Tokyo, Japan. 〈hal-01104494〉
  • Zakaria Djebbour, Walid Elhuni, Anne Migan-Dubois, Mohamed Boutchich, Jean-Paul Kleider, et al.. Research & Partnership opportunities in III-V on Si at LGEP and Supélec. France-USA Workshop on Quantum Engineered High Efficiency Photvoltaics, Jun 2014, Houston, United States. Proceedings of the France-USA Workshop on Quantum Engineered High Efficiency Photvoltaics. 〈hal-01099358〉
  • Sofia Gaiaschi, E.V. Johnson, Marie-Estelle Gueunier-Farret, Christophe Longeaud, P. Chapon, et al.. Low temperature hydrogenated microcrystalline silicon-carbon alloys deposited by RF-PECVD for photovoltaic application. E-MRS Spring Meeting 2014, May 2014, Lille, France. Proceedings of the E-MRS Spring Meeting 2014. 〈hal-01099573〉
  • Alexander Korovin, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. 2D Modeling of Homojunction, Heterojunction and Hybrid n-Type Interdigitated Back Contact Silicon Solar Cell. EU PVSEC 2014, Sep 2014, Amsterdam, Netherlands. Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition, pp.1162 - 1165, 2014. 〈hal-01099584〉
  • Sofia Gaiaschi, Marie-Estelle Gueunier-Farret, Christophe Longeaud, E.V. Johnson, P. Chapon, et al.. Structural and electrical properties of hydrogenated microcrystalline silicon-carbon alloys deposited at low substrate temperature by RF-PECVD. E-MRS Spring Meeting 2014, May 2014, Lille, France. Proceedings of the E-MRS Spring Meeting 2014, 2014. 〈hal-01099579〉
  • Alexander Gudovskikh, E.V. Nikitina, Jean-Paul Kleider. a-Si:H/c-Si heterojunction interface properties from Hall measurements of surface inversion layer. E-MRS Spring Meeting 2014, May 2014, Lille, France. Proceedings of the E-MRS Spring Meeting 2014, 2014. 〈hal-01099577〉
  • Pratish Mahtani, Bastien Jovet, Nazir P. Kherani, Renaud Varache, Christophe Longeaud, et al.. Metastability of the amorphous-crystalline silicon heterointerface. EU PVSEC 2014, Sep 2014, Amsterdam, Netherlands. Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition, 2014. 〈hal-01099581〉
  • Jean-Paul Kleider, José Alvarez, Aurore Brézard-Oudot, Marie-Estelle Gueunier-Farret, Olga Maslova. Revisiting the theory and usage of capacitance techniques: application of high efficiency amorphous/crystalline heterojunction solar cells. E-MRS Spring Meeting 2014, May 2014, Lille, France. Proceedings of the E-MRS Spring Meeting 2014, 2014. 〈hal-01099589〉
  • Timothée Molière, Charles Renard, Alexandre Jaffré, Laetitia Vincent, Daniel Bouchier, et al.. Route toward III-V multispectral solar cells on silicon. E-MRS Spring Meeting 2014, May 2014, Lille, France. Proceedings of the E-MRS Spring Meeting 2014. 〈hal-01099576〉
  • David Réaux, Jean-Paul Kleider, Marie-Estelle Gueunier-Farret. MODELING OF THE SURFACE DEFECT DENSITY IN C-SI/A-SI:H HETEROJUNCTIONS USING THE DEFECT-POOL. EU PVSEC 2014, Sep 2014, Amsterdam, Netherlands. Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition, pp.1158-1161, 2014. 〈hal-01099585〉
  • Arouna Darga, F. Sorin, Christophe Longeaud, Y. Berdnikov, E. Sondergard, et al.. Electronic transport properties of Cu2ZnSn(S,Se)4 thin films obtained from Lift-off process. E-MRS Spring Meeting 2014, May 2014, Lille, France. Proceedings of the E-MRS Spring Meeting 2014, 2014. 〈hal-01099377〉
  • K. S. Zelentsov, A.S. Gudovskikh, N.A. Kalyuzhnyy, V.M. Lantratov, S.A. Mintairov, et al.. Characterization of the III-V/Ge interface by capacitance measurements for III-V multijunction solar cells development. E-MRS Spring Meeting 2013, May 2013, Strasbourg, France. 2013. 〈hal-00931315〉
  • Ming Xu, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Mohamed Boutchich, et al.. Photoluminescence techniques for heterojunction solar cell characterization. Journées Junior FédESol 2013, Dec 2013, Dourdan, France. 2013. 〈hal-00931326〉
  • Ming Xu, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Mohamed Boutchich, et al.. Photoluminescence techniques for heterojunction solar cell characterization. JNPV 2013, Dec 2013, Dourdan, France. 2013. 〈hal-00931327〉
  • Olga Maslova, Aurore Brézard-Oudot, Marie-Estelle Gueunier-Farret, José Alvarez, Wilfried Favre, et al.. Temperature and Bias Dependence of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterojunction Capacitance: The Link to Band Bending and Band Offsets. ICANS 25, Aug 2013, Toronto, Canada. 2013. 〈hal-00931318〉
  • Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Christophe Longeaud, Sofia Gaiaschi. Caractérisation des défauts électriquement actifs de semiconducteurs en couches minces par la technique du photocourant modulé. JNPV 2013, Dec 2013, Dourdan, France. 2013. 〈hal-00931321〉
  • Alexandre Jaffré, José Alvarez, Timothée Molière, Denis Mencaraglia, J. Connolly, et al.. Caractérisations optiques et électriques de cristaux GaAs intégrés sur Si pour la réalisation de cellules solaires multispectrales III-V sur Silicium. JNPV 2013, Dec 2013, Dourdan, France. 2013. 〈hal-00931328〉
  • T. Desrues, Isidro Martin, S. De Vecchi, S. Abolmasov, Djicknoum Diouf, et al.. Silicon Heterojunction for Advanced Rear Contact Cells: Main Results of the SHARCC Project. EUPVSEC 2013, Sep 2013, Paris, France. pp.1135-1138, 2013. 〈hal-00931337〉
  • Igor P. Sobkowicz, Parsathi Chatterjee, Marie-Estelle Gueunier-Farret, Antoine Salomon, Jean-Paul Kleider, et al.. Coplanar conductance measurements and modeling to characterize surface passivation of c-Si wafers by a-Si:H. EUPVSEC 2013, Sep 2013, Paris, France. pp.1680 - 1685, 2013. 〈hal-00931340〉
  • Charles Renard, Timothée Molière, Alexandre Jaffré, Laetitia Vincent, Patrick Boucher, et al.. III-V multispectral solar cells on silicon. E-MRS Spring Meeting 2013, May 2013, Strasbourg, France. 2013. 〈hal-00931316〉
  • Charles Renard, N. Cherkasin, Alexandre Jaffré, Timothée Molière, Laetitia Vincent, et al.. Growth route toward III-V multispectral solar cells on silicon. EUPVSEC 2013, Sep 2013, Paris, France. pp.344-348, 2013. 〈hal-00931338〉
  • Sofia Gaiaschi, R. Ruggeri, E.V. Johnson, Pavel Bulkin, Marie-Estelle Gueunier-Farret, et al.. Structural and electrical characterization of microcrystalline silicon-carbon alloys deposited by RF-PECVD. E-MRS Spring Meeting 2013, May 2013, Strasbourg, France. 2013. 〈hal-00931313〉
  • Olga Maslova, Aurore Brézard-Oudot, Wilfried Favre, D Munoz, Marie-Estelle Gueunier-Farret, et al.. Capacitance spectroscopy of hydrogenated amorphous silicon/crystalline silicon heterojunctions : analytical calculations and experiment. E-MRS 2013 Spring Meeting, May 2013, Strasbourg, France. 2013. 〈hal-00931314〉
  • Jean-Paul Kleider, Wilfried Favre, Renaud Varache, Olga Maslova, José Alvarez, et al.. Physical insight on silicon heterojunction solar cells from electrical characterization. n-PV Workshop 2013, Apr 2013, Chambéry, France. 2013. 〈hal-00931320〉
  • Sofia Gaiaschi, E.V. Johnson, Marie-Estelle Gueunier-Farret, Christophe Longeaud, Pavel Bulkin, et al.. µc-Si1-xCx:H deposited by RF-PECVD: a novel material for PV applications. E-MRS Fall Meeting 2013, Sep 2013, Warsaw, Poland. 2013. 〈hal-00931311〉
  • Sofia Gaiaschi, R. Ruggeri, E.V. Johnson, Marie-Estelle Gueunier-Farret, Christophe Longeaud, et al.. Tailored Voltage deposition of µc-Si1-xCx:H from H2 diluted SiH4 and CH4 gas mixtures. ICANS 25, Aug 2013, Toronto, Canada. 2013. 〈hal-00931312〉
  • José Alvarez, Alexandre Jaffré, Charles Renard, N. Cherkasin, Timothée Molière, et al.. Structural, optoelectronic and electrical properties of GaAs microcrystals grown from (001) Si nano-areas. Erice School 2013 - Nano-Structures For Optics And Photonics, Jul 2013, Erice, Italy. 2013. 〈hal-00931323〉
  • José Alvarez, Jean-Paul Kleider, Samah Ibrahim. Photoluminescence and electroluminescence characterization of a-Si:H/c-Si interfaces. Erice School 2013 - Nano-Structures For Optics And Photonics, Jul 2013, Erice, Italy. 2013. 〈hal-00931324〉
  • Sofia Gaiaschi, Marie-Estelle Gueunier-Farret, Christophe Longeaud, E.V. Johnson, Pavel Bulkin, et al.. RF power influence on structural and electrical properties of µc-Si1-xCx:H. EUPVSEC 2013, Sep 2013, Paris, France. 2013. 〈hal-00931310〉
  • Arouna Darga, Wilfried Favre, Jean-Paul Kleider, Denis Mencaraglia, H. Marko, et al.. Admittance spectroscopy of wide band gap CIGSe solar cells: Influence of the Cu off-stoechiometry. E-MRS Spring Meeting 2012, May 2012, Strasbourg, France. 2012. 〈hal-00779002〉
  • Jean-Paul Kleider, Wilfried Favre, Renaud Varache, Olga Maslova, José Alvarez, et al.. Heterojunctions on n-type c-Si: determination of interface parameters from electrical techniques. nPV Workshop 2012, May 2012, Amsterdam, Netherlands. 2012. 〈hal-00779010〉
  • Jean-Paul Kleider, Renaud Varache, Wilfried Favre, Olga Maslova, José Alvarez, et al.. Electrical characterization and modeling of the amorphous/crystalline silicon interface. E-MRS 2012 Spring Meeting, May 2012, Strasbourg, France. 2012. 〈hal-00778999〉
  • Renaud Varache, Basia Halliop, Nazir P. Kherani, Wilfried Favre, Lars Korte, et al.. Calculation and measurement of the band-bending in crystalline silicon as an optimization tool for silicon heterojunction solar cells. E-MRS Spring Meeting 2012, May 2012, Strasbourg, France. 2012. 〈hal-00779003〉
  • Renaud Varache, Jean-Paul Kleider, Basia Halliop, Nazir Kherani, Marie-Estelle Gueunier-Farret. Influence of the undoped a-Si:H buffer layer on a-Si:H/c-Si heterojunctions from planar conductance and lifetime measurements. EU PVSEC 2012, Sep 2012, Frankfurt, Germany. 2012. 〈hal-00779006〉
  • Renaud Varache, Heike Angermann, Lars Korte, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Controlled interfacial WET-CHEMICAL oxide for amorphous silicon/crystalline silicon heterojunction solar cells. EU PVSEC 2012, Sep 2012, Frankfurt, Germany. 2012. 〈hal-00779007〉
  • Arouna Darga, José Alvarez, Christophe Longeaud, Jean-Paul Kleider, Fabien Sorin, et al.. Etude des propriétés du transport électroniques dans les cellules à base de Cu2ZnSn(S, Se)4 (CZTSSe). JNPV 2012, Dec 2012, Chantilly, France. 2012. 〈hal-00779016〉
  • Sofia Gaiaschi, E.V. Johnson, Pavel Bulkin, P. Chapon, Marie-Estelle Gueunier-Farret, et al.. Deposition of microcrystalline silicon-carbon alloys by RF-PECVD and MDECR. E-MRS Spring Meeting 2012, May 2012, Strasbourg, France. 2012. 〈hal-00779004〉
  • R Brüggemann, Jean-Paul Kleider. On the importance of quasi-Fermi levels in photocurrent spectroscopies. Festkolloquium in honor of Pr. G.H. Bauer, Oct 2012, Oldenburg, Germany. 2012. 〈hal-00779011〉
  • Wilfried Favre, Renaud Varache, José Alvarez, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Characterization and modeling of heterojunction solar cells. IWTFSSC 4, Mar 2012, Neuchâtel, Switzerland. 2012. 〈hal-00778998〉
  • Renaud Varache, Jean-Paul Kleider, Marie-Estelle Gueunier-Farret, Lars Korte. Cellules photovoltaiques à heterojonction de silicium (c-Si/a-Si:H): modèle analytique et simulation numérique pour une optimisation des propriétés de l'émetteur. JNPV 2012, Dec 2012, Chantilly, France. 2012. 〈hal-00779020〉
  • Renaud Varache, H. Angermann, Lars Korte, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Couche tampon d'oxyde de silicium pour des cellules à heterojonction de silicium. JNPV 2012, Dec 2012, Chantilly, France. 2012. 〈hal-00779021〉
  • Irène Ngo, Marie-Estelle Gueunier-Farret, José Alvarez, Jean-Paul Kleider. Modeling of c-Si/a-Si:H nanowires based solar cells. 12th Euregional Workshop on Novel Concepts for Future Thin-Film Silicon Solar Cells, Jan 2012, Delft, Netherlands. 〈hal-00779014〉
  • Olga Maslova, Aurore Brézard-Oudot, Wilfried Favre, José Alvarez, A.S. Gudovskikh, et al.. Caracterisation de l'interface (p) a-Si :H/(n) c-Si par spectroscopie de capacite : modelisation et resultats experimentaux. JNPV 2012, Dec 2012, Chantilly, France. 2012. 〈hal-00779018〉
  • José Alvarez, Mohamed Boutchich, Djicknoum Diouf, Jean-Paul Kleider, M. Liao, et al.. Ultraviolet photodetectors based on hydrogenated/oxidized diamond surfaces characterization of silicon heterojunctions for solar cells. IUMRS-ICEM 2012, Mar 2012, Yokohama, Japan. 2012. 〈hal-00779008〉
  • Mohamed Boutchich, Alexandre Jaffré, David Alamarguy, José Alvarez, A. Barras, et al.. Graphene oxide reduced through chemical and biological processes. Irago Conference 2012, Nov 2012, Aichi, Japan. 2012. 〈hal-00779022〉
  • Sofia Gaiaschi, R. Ruggeri, E.V. Johnson, Pavel Bulkin, Marie-Estelle Gueunier-Farret, et al.. Caracterisations structurales et electriques de μc-Si1−xCx :H deposes par RF-PECVD. JNPV 2012, Dec 2012, Chantilly, France. 2012. 〈hal-00781749〉
  • Mohamed Boutchich, José Alvarez, Djicknoum Diouf, Pere Roca I Cabarrocas, M Liao, et al.. Amorphous and microcrystalline silicon diamond based heterojunctions. ICANS24, Aug 2011, Nara, Japan. 2011. 〈hal-00710772〉
  • A.S. Gudovskikh, K. S. Zelentsov, N.A. Kalyuzhnyy, V.M. Lantratov, S.A. Mintairov, et al.. Interfaces in III-V multijunction solar cells: characterization and modelling. E-MRS Spring Meeting 2011, May 2011, Nice, France. 2011. 〈hal-00710767〉
  • Djicknoum Diouf, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Optimization of a-Si:H/c-Si heterointerfaces by 2D numerical simulations: influence of intrinsic a-Si:H buffer layer. E-MRS Spring Meeting 2011, May 2011, Nice, France. 2011. 〈hal-00710766〉
  • Irène Ngo, Marie-Estelle Gueunier-Farret, José Alvarez, Jean-Paul Kleider. Modelling of c-Si/a-Si:H nanowire solar cells: some key parameters to optimize the photovoltaic performance. E-MRS Spring Meeting 2011, May 2011, Nice, France. 2011. 〈hal-00710770〉
  • Wilfried Favre, Morgane Fruzzetti, Christelle Pareige, Jean-Paul Kleider. Studies of the effective lifetime determined on homo and heterojunction silicon solar cells from modulated luminescence techniques : photoluminescence and electroluminescence. E-MRS Spring Meeting 2011, May 2011, Nice, France. 2011. 〈hal-00710768〉
  • Arouna Darga, Wilfried Favre, Jean-Paul Kleider, Denis Mencaraglia, H. Marko, et al.. Influence of Cu Off-Stoechiometry on Wide Band Gap CIGSe Solar Cells Electronic Properties. ICANS24, Aug 2011, Nara, Japan. 2011. 〈hal-00710757〉
  • Olga Maslova, Foudil Dadouche, Jean-Paul Kleider, A.S. Gudovskikh, E.I Terukov. Capacitance spectroscopy in amorphous silicon Schottky diodes : theory and modeling. E-MRS Spring Meeting 2011, May 2011, Nice, France. 2011. 〈hal-00710769〉
  • Silvia Martin de Nicolas, Wilfried Favre, S Ozanne, D Munoz, Jean-Paul Kleider, et al.. Optimisation of (n) a-Si:H layers used as a back surface field on n-type silicon heterojunction solar cells. ICANS24, Aug 2011, Nara, Japan. 2011. 〈hal-00710776〉
  • Renaud Varache, Wilfried Favre, Lars Korte, Jean-Paul Kleider. Influence of the amorphous/crystalline silicon heterostructure properties on planar conductance measurements. ICANS24, Aug 2011, Nara, Japan. 2011. 〈hal-00710775〉
  • Basia Halliop, Marie-France Salaün, Wilfried Favre, Renaud Varache, Marie-Estelle Gueunier-Farret, et al.. Interface properties of amorphous-crystalline silicon heterojunctions prepared using DC saddle-field PECVD. ICANS24, Aug 2011, Nara, Japan. 2011. 〈hal-00710771〉
  • Olga Maslova, Marie-Estelle Gueunier-Farret, José Alvarez, A.S. Gudovskikh, E.I Terukov, et al.. Space charge capacitance spectroscopy in amorphous silicon Schottky diodes: theory, modeling, and experiments. ICANS24, Aug 2011, Nara, Japan. 2011. 〈hal-00710774〉
  • Jean-Paul Kleider. Physique de línterface a-Si:H/c-Si et de la cellule PV à hétérojonction de Si. JNPV 2011, Dec 2011, Dourdan, France. 2011. 〈hal-00710787〉
  • Samah Ibrahim, José Alvarez, Jean-Paul Kleider. Photoluminescence Spectrum in Silicon Measured by Confocal and Nonconfocal Systems. Journées Nationales PhotoVoltaïques 2011, Dec 2011, Dourdan, France. 〈hal-00710791〉
  • José Alvarez, Jean-Paul Kleider, Pere Roca I Cabarrocas. Electrical properties of µc-Si:H by conductive-probe AFM. E-MRS Fall Meeting 2011, Sep 2011, Varsovie, Poland. 2011. 〈hal-00710778〉
  • P.-J. Ribeyron, D Munoz, Jean-Paul Kleider, Wilfried Favre, Pere Roca I Cabarrocas, et al.. Record european efficiency amorphous silicon heterojunction solar cells: final results from the HETSI project. 26th EU PVSEC, Sep 2011, Hambourg, Germany. 2011. 〈hal-00710781〉
  • Morgane Fruzzetti, José Alvarez, Irène Ngo, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, et al.. Conductive-atomic force microscopy and Raman spectroscopy characterization of silicon nanowires. Journées Nationales PhotoVoltaïques 2011, Dec 2011, Dourdan, France. 〈hal-00710790〉
  • Olga Maslova, Aurore Brézard, Wilfried Favre, José Alvarez, A.S. Gudovskikh, et al.. Characterization of the a-Si:H/c-Si interface by capacitance spectroscopy measurements: modeling and experiments. E-MRS Fall Meeting 2011, Sep 2011, Varsovie, Poland. 2011. 〈hal-00710779〉
  • Wilfried Favre, Laroussi Bettaieb, J. Després, José Alvarez, Jean-Paul Kleider, et al.. Coil-to-sample distance influence on contactless QSSPC effective lifetime measurements : application to silicon wafers passivated by thin amorphous layers. 26th EU PVSEC, Sep 2011, Hambourg, Germany. 2011. 〈hal-00710780〉
  • Djicknoum Diouf, Jean-Paul Kleider, Irène Ngo, Marie-Estelle Gueunier-Farret, José Alvarez. Nanowire solar cells using hydrogenated amorphous silicon: a modeling study. E-MRS Fall Meeting 2011, Sep 2011, Varsovie, Poland. 2011. 〈hal-00710777〉
  • Jean-Paul Kleider. The physics of silicon heterojunctions. French-Russian scientific seminar, Silicon and III-V compound semiconductor thin films for photovoltaics: new trends and perspectives, May 2011, Gif-sur-Yvette, France. 2011. 〈hal-00710798〉
  • Djicknoum Diouf, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Optimization of a-Si:H/c-Si heterointerfaces by 2D numerical simulations : influence of intrinsic a-Si:H buffer layer. Journées Nationales Photovoltaïques 2011, Dec 2011, Dourdan, France. 〈hal-00710793〉
  • Jean-Paul Kleider. Axe transverse : physique des matériaux, interfaces, dispositifs. Journée de lancement de la fédération photovoltaique Ile-de-France, Feb 2011, Paris, France. 2011. 〈hal-00710783〉
  • Renaud Varache, H. Angermann, Jean-Paul Kleider, Lars Korte. Proof of concept for silicon heterojunction solar cells with thin oxide passivation layers. Journées Nationales PhotoVoltaïques 2011, Dec 2011, Dourdan, France. 〈hal-00710794〉
  • Djicknoum Diouf, Jean-Paul Kleider, Irène Ngo, Marie-Estelle Gueunier-Farret, José Alvarez. Nanowire solar cells using hydrogenated amorphus silicon : a modeling study. Journées Nationales PhotoVoltaïques 2011, Dec 2011, Dourdan, France. 〈hal-00710792〉
  • Jean-Paul Kleider. Photovoltaïque. SEEDS 2011, Jun 2011, Cachan, France. 2011. 〈hal-00710784〉
  • B. Caylar, M. Pomorski, José Alvarez, Jean-Paul Kleider, A. Oh, et al.. Novel 3D micro-structuring of diamond for radiation detector applications: enhanced performances evaluated under particle and photon beams. Diamond 2011, Sep 2011, Garmisch-Partenkirchen, Germany. 2011. 〈hal-00710785〉
  • José Alvarez, Irène Ngo, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Simon Perraud. Electrical characterization of phosphorus doped silicon nanowires. MRS Spring Meeting, Apr 2010, San Francisco, United States. 2010. 〈hal-00555247〉
  • Wilfried Favre, Christelle Pareige, Jean-Paul Kleider, M. Labrune, Pere Roca I Cabarrocas, et al.. Optical and electrical characterization of silicon heterojunctions with n-type multicrystalline substrate : towards a low cost heterojunction solar cell. 25th European Photovoltaic Solar Energy Conference, Sep 2010, Valencia, Spain. 2010. 〈hal-00555248〉
  • José Alvarez, Irène Ngo, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Lianbo Yu, et al.. Conductive-atomic force microscopy characterization of silicon nanowires. E-MRS 2010 Fall Meeting, Sep 2010, Varsovie, Poland. 2010. 〈hal-00555251〉
  • Y. Koide, M. Liao, M. Imura, José Alvarez, Jean-Paul Kleider. Diamond UV detectors and sensing mechanism. Hasselt Diamond Workshop SBDD XV, Feb 2010, Hasselt, Belgium. 2010. 〈hal-00555255〉
  • Wilfried Favre, Jean-Paul Kleider, D. Munoz, S. Martin-De-Nicolas, P.-J. Ribeyron. Spatially resolved lifetime measurements of silicon heterojunctions from the modulated photoluminescence technique. E-MRS 2010 Spring Meeting, Jun 2010, Strasbourg, France. 2010. 〈hal-00555244〉
  • Olga Maslova, Foudil Dadouche, Jean-Paul Kleider, A.S. Gudovskikh, E.I Terukov. Capacitance spectroscopy in amorphous silicon Schottky diodes : theory and modelling. 7th International Conference on amorphous and microcrystalline semiconductors, Jun 2010, Saint-Petersburg, Russia. 2010. 〈hal-00555250〉
  • Irène Ngo, B. O\'Donnell, José Alvarez, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, et al.. Catalyst formation and growth of Sn- and In-catalyzed silicon nanowires. MRS Spring Meeting, Apr 2010, San Francisco, United States. 2010. 〈hal-00555252〉
  • Caspar Leendertz, N. Mingirulli, T.F. Schulze, Jean-Paul Kleider, Bernd Rech, et al.. Physical insight into interface passivation of a-Si:H/c-Si heterostructures by analysis of injection-dependent lifetime and band bending. 25th European Photovoltaic Solar Energy Conference, Sep 2010, Valencia, Spain. 2010. 〈hal-00555253〉
  • Jean-Paul Kleider. Capacitance techniques for the evaluation of electronic properties and defects in disordered thin film semiconductors. 7th International Conference on amorphous and microcrystalline semiconductors, Jun 2010, Saint-Petersburg, Russia. pp.00, 2010. 〈hal-00555256〉
  • Jean-Paul Kleider, José Alvarez, A.V. Ankudinov, A.S. Gudovskikh, E.V. Gushina, et al.. Characterization of silicon heterojunctions for solar cells. E-MRS 2010 Fall Meeting, 2010, Varsovie, Poland. 2010. 〈hal-00555254〉
  • Djicknoum Diouf, Jean-Paul Kleider, T. Desrues, P.-J. Ribeyron. 2D simulations of interdigitated back contact heterojunctions solar cells based on n-type crystalline silicon. 23rd International Conference on Amorphous and Nanocrystalline Semiconductors - ICANS23, 2009, Utrecht, Netherlands. 2009. 〈hal-00446014〉
  • T. Desrues, P.-J. Ribeyron, A. Vandenheynde, S. Ozanne, D. Munoz, et al.. Progress in Contacting a-Si:H/c-Si Heterojunction Solar Cells and its Application to Interdigitaded Back Contact Structure. 24th European Photovoltaic Solar Energy Conference, 2009, Hambourg, Allemagne. pp. 2202-2205, 2009. 〈hal-00446013〉
  • José Alvarez, Jean-Paul Kleider, M. Liao, M. Imura, Y. Koide. Ultraviolet photodetectors based on hydrogenated diamond surfaces treated by UV-Ozone. NIMS-AIST Workshop, 2009, Tsukuba, Japan. 2009. 〈hal-00446007〉
  • Foudil Dadouche, Olivier Bethoux, Marie-Estelle Farret-Gueunier, E.V. Johnson, Pere Roca I Cabarrocas, et al.. Comparative study of thin-film silicon cell tandem structures pm-Si:H/µc-Si:H in system association prospect. European Materials Research Society – EMRS Spring Meeting, 2009, Strasbourg, France. pp.CD-Rom Proceedings, 2009. 〈hal-00446008〉
  • E.V. Johnson, Foudil Dadouche, Marie-Estelle Farret-Gueunier, Jean-Paul Kleider, Pere Roca I Cabarrocas. Open-circuit voltage increase dynamics in high and low deposition rate polymorphous silicon solar cells. 23rd International Conference on Amorphous and Nanocrystalline Semiconductors - ICANS23, 2009, Utrecht, Netherlands. 2009. 〈hal-00446010〉
  • E.V. Johnson, A. Abramov, K.H. Kim, Yrebegnan Soro, Marie-Estelle Farret-Gueunier, et al.. Hydrogenated polymorphous silicon at high deposition rate : serious alternative for cost-effective modules. 18th International Photovoltaic Science and Engineering Conference and Exhibition, 2009, Kolkata, India. 2009. 〈hal-00446006〉
  • Foudil Dadouche, Olivier Bethoux, Eric Labouré, E.V. Johnson, Pere Roca I Cabarrocas, et al.. A system study on silicon thin-film pm-Si:H/µc-Si:H tandem cell structure. 24th European Photovoltaic Solar Energy Conference, Sep 2009, Hambourg, Germany. pp. 3699-3705, 2009. 〈hal-00446011〉
  • Wilfried Favre, M. Labrune, Foudil Dadouche, A.S. Gudovskikh, Pere Roca I Cabarrocas, et al.. Study of the interfacial properties of amorphous Silicon n type crystalline Silicon heterojunction through static coplanar conductance measurements. 23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23, 2009, Utrecht, Netherlands. 2009. 〈hal-00446015〉
  • Pere Roca I Cabarrocas, T. Desrues, M. Labrune, Djicknoum Diouf, Jean-Paul Kleider, et al.. QC-PASSI : Cellules photovoltaïques silicium à hétérojonctions et structure interdigitée en face arrière associé à un effet de multiplication quantique en face avant pour une augmentation du rendement de conversion. Séminaire ANR Solaire Photovoltaïque 2008, Dec 2008, Marseille, France. 2008. 〈hal-00354233〉
  • José Alvarez, M.Y. Liao, Y. Koide, M. Imura, Jean-Paul Kleider. Ultra-violet detectors based on hydrogenated diamond surfaces treated by ozone. XI International Conference on Dielectrics, Jun 2008, St Petersbourg, Russia. 2008. 〈hal-00354207〉
  • T. Desrues, P.J. Ribeyron, A. Vandeneynde, A.-S. Ozanne, F. Souche, et al.. New process integration for interdigitated back contact (IBC) a-Si:H/c-Si heterojunction solar cells. 23rd European Photovoltaic Solar Energy Conference and Exhibition, Sep 2008, Valencia, Spain. 2008. 〈hal-00354212〉
  • José Alvarez, Jean-Paul Kleider, M. Liao, Y. Koide, M. Imura. Les recherches sur le diamant au LGEP : amélioration des performances de détection dans l'UV. Journées du GDR "DIAMANT", Oct 2008, Gif Sur Yvette, France. 〈hal-00354471〉
  • Jean-Paul Kleider, A.S. Gudovskikh. Characterization of amorphous/crystalline silicon interfaces from electrical measurements. MRS Spring Meeting, Mar 2008, San Francisco, United States. 〈hal-00351211〉
  • P.J. Ribeyron, A. Vandeneynde, F. Souche, Rémy Chouffot, Jean-Paul Kleider, et al.. Silicon heterojunction solar cells : surface passivation quality on large area n type and p type monocrystalline silicon, effect on solar cell efficiency. 23rd European Photovoltaic Solar Energy Conference and Exhibition, Sep 2008, Valencia, Spain. pp.CD-ROM Proceedings, 2008. 〈hal-00351247〉
  • Christophe Longeaud, Jean-Paul Kleider, P. Kaminski, R. Kozlowski. Characterization of defects in semi-insulating SiC by means of Photoinduced current transient spectroscopy and modulated photocurrent technique. XI International Conference “Physics of dielectrics”, Jun 2008, St Petersbourg, Russia. pp.CD-ROM Proceedings, 2008. 〈hal-00351230〉
  • Pere Roca I Cabarrocas, R. Meaudre, Jean-Paul Kleider. TGV-SICOMAT, Couches minces déposées à très grande vitesse pour le PV dans l'habitat. Colloque ENERGIE, 2008, Poitiers, France. 2008. 〈hal-00351221〉
  • Djicknoum Diouf, Jean-Paul Kleider, T. Desrues, P.J. Ribeyron. Study of interdigitated back contact silicon heterojunctions solar cells by two dimensional numerical simulations. E-MRS 2008 Spring Meeting, 2008, Strasbourg, France. pp.0, 2008. 〈hal-00351252〉
  • Rémy Chouffot, Aurore Brezard-Oudot, Jean-Paul Kleider, R. Brüggemann, M. Labrune, et al.. Modulated photoluminescence as an effective lifetime measurement method : application to a-Si:H/c-Si heterojunction solar cells. E-MRS 2008 Spring Meeting, May 2008, Strasbourg, France. pp.0, 2008. 〈hal-00351253〉
  • Yrebegnan Moussa Soro, Marie-Estelle Gueunier-Farret, Christophe Longeaud, Jean-Paul Kleider. Device grade hydrogenated polymorphous silicon deposited at high rates. Journées annuelles de la SF2M 2008, Jun 2008, Paris, France. pp.CD-ROM, 2008. 〈hal-00351235〉
  • Rémy Chouffot, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, C. Baur, A. De Luca, et al.. Characterization and modelling of the dynamical electrical behaviour of triple junction solar cells. 23rd European Photovoltaic Solar Energy Conference and Exhibition, Sep 2008, Valencia, Spain. pp.CD-ROM Proceedings, 2008. 〈hal-00351239〉
  • Jean-Paul Kleider, A.S. Gudovskikh. Characterization of amorphous/crystalline silicon interfaces from electrical measurements. MRS Spring Meeting, Mar 2008, San Francisco, United States. 2008. 〈hal-00351223〉
  • A.S. Gudovskikh, Jean-Paul Kleider, Rémy Chouffot, N.A. Kaluzhniy, V. Lantratov, et al.. Study of GaInP heterojunction solar cell interface properties by admittance spectroscopy. 23rd European Photovoltaic Solar Energy Conference and Exhibition, Sep 2008, Valencia, Spain. pp.CD-ROM Proceedings, 2008. 〈hal-00351244〉
  • M. Labrune, Pere Roca I Cabarrocas, Rémy Chouffot, Aurore Brezard-Oudot, Jean-Paul Kleider, et al.. Polymorphous/crystalline silicon heterojunction solar cells : optimization on monocrystalline silicon. 23rd European Photovoltaic Solar Energy Conference and Exhibition, Sep 2008, Valencia, Spain. pp.CD-ROM Proceedings, 2008. 〈hal-00351246〉
  • Djicknoum Diouf, Jean-Paul Kleider, T. Desrues, P.J. Ribeyron, P. Thony. Interdigitated back contact a-Si:H/c-Si heterojunction solar cells modelling : limiting parameters influence on device efficiency. 23rd European Photovoltaic Solar Energy Conference and Exhibition, Valencia, Sep 2008, Valencia, Spain. pp.CD-ROM Proceedings, 2008. 〈hal-00351250〉
  • Jean-Paul Kleider, Rémy Chouffot, A.S. Gudovskikh, Pere Roca I Cabarrocas, M. Labrune, et al.. Characterization of amorphous/crystalline silicon interfaces. E-MRS 2008 Spring Meeting, May 2008, Strasbourg, France. 〈hal-00351213〉
  • Christophe Longeaud, J.A. Schmidt, R.R. Koropecki, Jean-Paul Kleider. Determination of hydrogenated amorphous silicon density of states parameters from photoconductivity measurements. 15th International School on Condensed Matter Physics, Sep 2008, Varna, Bulgaria. 〈hal-00351215〉
  • P.J. Ribeyron, A. Vandeneynde, J. Damon-Lacoste, D. Eon, Pere Roca I Cabarrocas, et al.. Polymorphous/crystalline silicon heterojunction solar cells: optimization on monocrystalline silicon. 22nd European Photovoltaic Solar Energy Conference and Exhibition, 2007, Italy. pp.1197-1200, 2007. 〈hal-00322107〉
  • A.S. Gudovskikh, V. Lantratov, Rémy Chouffot, Jean-Paul Kleider, J. Damon-Lacoste, et al.. New method for interface characterisation in heterojunction solar cells based on diffusion capacitance measurements. E-MRS 2007 Spring Meeting, 2007, France. 〈hal-00322267〉
  • C. Godet, Jean-Paul Kleider, A.S. Gudovskikh. Electric field-controlled sign of the capacitance in metal-carbon nitride-metal devices. 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, 2007, United States. 〈hal-00322270〉
  • Jean-Paul Kleider, Yrebegnan Moussa Soro, Rémy Chouffot, A.S. Gudovskikh, Pere Roca I Cabarrocas, et al.. High interfacial conductivity at amorphous silicon/crystalline silicon heterojunctions. 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, 2007, United States. 〈hal-00322289〉
  • P. Leempoel, P. Descamps, T. Kervyn de Meerenedre, J. Charliac, Pere Roca I Cabarrocas, et al.. Distributed Electron Cyclotron Resonance plasma: a technology for large area deposition of device quality a-Si:H at very high rate. E-MRS 2007 Spring Meeting, 2007, France. 〈hal-00322305〉
  • Rémy Chouffot, Jean-Paul Kleider. Etude des interfaces des hétérojonctions de silicium. Colloque national ADEME-ANR Électricité photovoltaïque, 2007, France. 2007. 〈hal-00322118〉
  • Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Device grade hydrogenated polymorphous silicon deposited at high rates. 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, 2007, United States. 〈hal-00322281〉
  • Rémy Chouffot, Samah Ibrahim, R. Brüggemann, A.S. Gudovskikh, Jean-Paul Kleider, et al.. Comparison of photoluminescence and capacitance spectroscopies as efficient tools for interface characterisation of heterojunction solar cells. 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, 2007, United States. 〈hal-00322286〉
  • Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Polymorphous silicon thin films deposited at high rate: transport properties and density of states. E-MRS 2007 Spring Meeting, 2007, France. 〈hal-00322303〉
  • José Alvarez, Jean-Paul Kleider, M.Y. Liao, Y. Koide. High UV photocurrent on hydrogenated Ib diamond (100) substrates. First International Conference on New Diamond and Nano Carbons, NDNC 2007, 2007, Japan. 〈hal-00322296〉
  • J.A. Schmidt, Christophe Longeaud, R.R. Koropecki, R. Arce, Jean-Paul Kleider. Modulated photoconductivity in the high and low frequency regimes. 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, 2007, United States. 〈hal-00322308〉
  • Christian Godet, Jean-Paul Kleider, A.S. Gudovskikh. Frequency scaling of ac hopping transport in amorphous carbon nitride. 5th Specialist Meeting on Amorphous Carbon thin films, 2007, Heraklion, Greece. 〈hal-00908642〉
  • José Alvarez, Jean-Paul Kleider, Frédéric Houzé, Pascal Chrétien, M. Liao, et al.. Mesures locales de photoconductivité par AFM à pointe conductrice sur des dispositifs métal-semiconducteur-métal à base de diamant. Réunion Annuelle VEECO des Utilisateurs d'AFM, 2006, France. 2006. 〈hal-00320320〉
  • P.J. Ribeyron, A. Vandeneynde, J. Damon-Lacoste, Pere Roca I Cabarrocas, Alexander Gudovskikh, et al.. Polymorphous/crystalline single heterojunction and double heterojunction solar cells optimisation on p type monocrystalline silicon. 21st European Photovoltaic Solar Energy Conference and Exhibition, 2006, Germany. pp.926-929, 2006. 〈hal-00321878〉
  • T.H. Dao, Marie-Estelle Gueunier-Farret, D. Daineka, P. Bulkin, Pere Roca I Cabarrocas, et al.. Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonance. E-MRS 2006 Spring Meeting, 2006, France. 〈hal-00321911〉
  • Alexander Gudovskikh, Samah Ibrahim, Jean-Paul Kleider, J. Damon-Lacoste, Pere Roca I Cabarrocas, et al.. Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance-voltage measurements: capabilities and limits. E-MRS 2006 Spring Meeting, 2006, France. 〈hal-00321915〉
  • José Alvarez, Jean-Paul Kleider, Frédéric Houzé, M. Liao, Y. Koide. Local photoconductivity on diamond metal-semiconductor-metal photodetectors measured byconducting probe atomic force microscopy. 17th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide, Diamond 2006, 2006, Portugal. 〈hal-00321918〉
  • José Alvarez, Frédéric Houzé, Jean-Paul Kleider, M. Liao, Y. Koide. Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy. E-MRS 2006, 2006, France. 2006. 〈hal-00320298〉
  • José Alvarez, Frédéric Houzé, Pascal Chrétien, Jean-Paul Kleider, C. Bazin, et al.. Local photoconductivity on Schottky diamond photodetectors measured by conducting probe atomic force microscopy. Diamond' 2006 (17th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides), 2006, Portugal. 2006. 〈hal-00320301〉
  • J. Damon-Lacoste, Pere Roca I Cabarrocas, P.J. Ribeyron, J.P. Kleider, A.S. Gudovskikh, et al.. Réalisation de cellules à hétérojonctions c-Si/a-Si:H à haut rendement. Nov 2005, ADEME, pp.50-51, 2005. 〈hal-00141683〉
  • Frédéric Houzé, José Alvarez, Jean-Paul Kleider, P. Bergonzo, E. Snidero, et al.. Local electrical characterization of Schottky diodes on H-terminated diamond surfaces by conducting probe atomic force microscopy. Diamond 2005, 2005, France. 〈hal-00321568〉
  • Marie-Estelle Gueunier-Farret, Cyril Bazin, Jean-Paul Kleider, Christophe Longeaud, P. Bulkin, et al.. Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates. 21st International Conference on Amorphous and Nanocrystalline Semiconductors, 2005, Portugal. 〈hal-00321694〉
  • Frédéric Houzé, José Alvarez, Jean-Paul Kleider, P. Bergonzo, E. Snidero, et al.. Local electrical characterization of Schottky diodes on H-terminated diamond surfaces by conducting probe atomic force microscopy. Diamond 2005, 2005, France. 〈hal-00321705〉
  • Alexander Gudovskikh, Jean-Paul Kleider, J. Damon-Lacoste, Pere Roca I Cabarrocas, Y. Veschetti, et al.. (n)a-Si:H/pm-Si:H/p-Si heterojunction solar cells: fabrication, properties and perspectives. a-SiNet Workshop, 2005, Netherlands. 〈hal-00321565〉
  • Jean-Paul Kleider, Alexander Gudovskikh, C. Godet. Dc and ac hopping transport in metal / amorphous carbon nitride/ metal devices. 21st International Conference on Amorphous and Nanocrystalline Semiconductors, 2005, Portugal. 〈hal-00321573〉
  • Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, F. Voigt, R. Brüggemann, G.H. Bauer, et al.. Transport properties and defects in silicon nanoparticles and effect of embedding in amorphous silicon layers. 21st International Conference on Amorphous and Nanocrystalline Semiconductors, 2005, Portugal. 〈hal-00321697〉
  • Alexander Gudovskikh, Jean-Paul Kleider, R. Stangl. New approach to capacitance spectroscopy for interface characterization of a-Si:H/c-Si heterojunctions. 21st International Conference on Amorphous and Nanocrystalline Semiconductors, 2005, Portugal. 〈hal-00321574〉
  • P.J. Ribeyron, E. Rolland, Pere Roca I Cabarrocas, Y. Veschetti, J.C. Muller, et al.. Polymorphous/crystalline heterojunction solar cell with low cost industrial process on p type monocrystalline silicon. 20th European Photovoltaic Solar Energy Conference and Exhibition, 2005, Spain. pp.1044-1047, 2005. 〈hal-00321557〉
  • Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Christophe Longeaud. The modulated photocurrent technique: comparison of the high and low frequency regimes for the characterisation of bandgap states in thin films semiconductors. a-SiNet Workshop, 2005, Netherlands. 〈hal-00321563〉
  • Y. Veschetti, J.C. Muller, J. Damon-Lacoste, Pere Roca I Cabarrocas, Alexander Gudovskikh, et al.. Optimisation of amorphous and polymorphous thin silicon layers for formation of front-side heterojunction solar cells on p-type crystalline silicon substrates. E-MRS 2005, 2005, France. 〈hal-00321571〉
  • Alexander Gudovskikh, Jean-Paul Kleider, J. Damon-Lacoste, Pere Roca I Cabarrocas, Y. Veschetti, et al.. Caractérisation d'interface de hétérojonctions a-Si:H/c-Si par spectroscopie de capacité sous polarisation directe. Séminaire ADEME-CEA-CNRS, 2005, France. 2005. 〈hal-00321554〉
  • Alexander Gudovskikh, Jean-Paul Kleider, J. Damon-Lacoste, Pere Roca I Cabarrocas, Y. Veschetti, et al.. Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy. E-MRS 2005, 2005, France. 〈hal-00321570〉
  • J. Damon-Lacoste, Pere Roca I Cabarrocas, Alexander Gudovskikh, Jean-Paul Kleider, Y. Veschetti, et al.. About the efficiency limits in HIT structures. 21st International Conference on Amorphous and Nanocrystalline Semiconductors, 2005, Portugal. 〈hal-00321577〉
  • J.A. Schmidt, Christophe Longeaud, R.R. Koropecki, Jean-Paul Kleider. Determination of the density of states of semiconductors from steady-state photoconductivity measurements. 21st International Conference on Amorphous and Nanocrystalline Semiconductors, 2005, Portugal. 〈hal-00321686〉
  • Y. Veschetti, J.C. Muller, J. Damon-Lacoste, Pere Roca I Cabarrocas, Alexander Gudovskikh, et al.. Improvement of polymorphous/crystalline heterojunction solar cell using low temperature screen-printed pastes on 5x5cm2. 31st Photovoltaic Specialists Conference and Exhibition, 2005, United States. pp.1131-1134, 2005. 〈hal-00321282〉
  • Frédéric Houzé, José Alvarez, Jean-Paul Kleider, P. Bergonzo, E. Snidero, et al.. Local electrical characterization of Schottky diodes on H-terminated diamond surfaces by conducting probe atomic force microscopy. Diamond' 2005 (16th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides), 2005, France. 2005. 〈hal-00320238〉
  • J. Damon-Lacoste, Pere Roca I Cabarrocas, P. Chatterjee, Y. Veschetti, A.S. Gudovskikh, et al.. About the efficiency limits of heterojunction solar cells. 21st International Conference on Amorphous and Nanocrystalline Semiconductors - Science and Technology, 2005, Lisbonne, Portugal. 〈hal-00350349〉
  • A.S. Gudovskikh, J.P. Kleider, J. Damon-Lacoste, Pere Roca I Cabarrocas, Y. Veschetti, et al.. Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy. European Material Research Society (E-MRS) Spring Conference, Symposium on Thin Film and Nano-Structured Materials for Photovoltaics, 2005, Strasbourg, France. 2005. 〈hal-00021659〉
  • Y. Veschetti, J.C. Muller, A.S. Gudovskikh, J.P. Kleider, E. Rolland, et al.. Optimisation of amorphous and polymorphous silicon thin layers for formation of front side heterojonction solar cells on p-type crystalline silicon substrate. European Material Research Society (E-MRS) Spring Conference, Symposium on Thin Film and Nano-Structured Materials for Photovoltaics, 2005, Strasbourg, France. 2005. 〈hal-00021693〉
  • Y. Veschetti, J.C. Muller, J. Damon-Lacoste, Pere Roca I Cabarrocas, A.S. Gudovskikh, et al.. Improvement of polymorphous/crystalline heterojunction solar cells using low temperature screen-printing pastes. 2005, pp.1131-1134, 2005. 〈hal-00021692〉
  • A.S. Gudovskikh, J.P. Kleider, J. Damon-Lacoste, Pere Roca I Cabarrocas, Y. Veschetti, et al.. Caractérisation d'interface de hétérojonctions a-Si:H/c-Si par spectroscopie de capacité sous polarisation directe. Nov 2005, ADEME, Actes pp. 75, 2005. 〈hal-00142664〉
  • Denis Mencaraglia, B. Canava, S. Cassaignon, A. Etcheberry, J.-F. Guillemoles, et al.. Absorption non conventionnelle de photons pour applications photovoltaïques (projet ANCO PV). Séminaire RDT photovoltaïque CNRS-ADEME, Matériaux et procédés pour la conversion photovoltaïque de l'énergie solaire, 2004, France. 2004. 〈hal-00321070〉
  • V. Svrcek, Y. Veschetti, J.C. Muller, A.S. Gudovskikh, J.P. Kleider, et al.. Monitoring of the polymorphous/silicon interface properties in the HIT solar cell by surface photovoltage technique in an expanded spectral region. 2004, edited by K. Hoffmann W., Bal J.L., Ossenbrink H., Palz W., Helm P, Proc. Vol. 2 pp. 1445-1448, 2004. 〈hal-00134576〉
  • J. Damon-Lacoste, Pere Roca I Cabarrocas, A.S. Gudovskikh, J.P. Kleider, P.J. Ribeyron, et al.. Plasma treatments of the interface in n-type amorphous hydrogenated silicon/p-type crystalline silicon heterojunction solar cells. 19th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), 2004, France. edited by K. Hoffmann W., Bal J.L., Ossenbrink H., Palz W., Helm P, Proc. Vol. 2 pp. 1453-1456, 2004. 〈hal-00132973〉
  • Alexander Gudovskikh, Jean-Paul Kleider, Samah Ibrahim. Caractérisation par spectroscopie d'admittance de cellules photovoltaïques à hétérojonction a-Si:H/c-Si. Séminaire RDT photovoltaïque CNRS-ADEME, Matériaux et procédés pour la conversion photovoltaïque de l'énergie solaire, 2004, France. 2004. 〈hal-00321084〉
  • J. Damon-Lacoste, Pere Roca I Cabarrocas, Alexander Gudovskikh, Jean-Paul Kleider, C. Jaussaud, et al.. Plasma treatments of the interface in n-type amorphous hydrogenated silicon p-type crystalline silicon heterojunction solar cells. 19th European Photovoltaic Solar Energy Conference, 2004, France. pp.1453-1456, 2004. 〈hal-00321096〉
  • Alexander Gudovskikh, Jean-Paul Kleider, R. Stangl, M. Schmidt, W. Fuhs. Interface properties of a-Si:H/c-Si heterojunctions investigated by complementary experimental techniques and modelling. 19th European Photovoltaic Solar Energy Conference, 2004, France. pp.687-700, 2004. 〈hal-00321097〉
  • V. Svrcek, Y. Veschetti, J.C. Muller, Alexander Gudovskikh, Jean-Paul Kleider, et al.. Monitoring of the polymorphous/silicon interface properties in the HIT solar cell by surface photovoltage technique in an expanded spectral region. 19th European Photovoltaic Solar Energy Conference, 2004, France. pp.1445-1448, 2004. 〈hal-00321095〉
  • Alexander Gudovskikh, Jean-Paul Kleider. Investigation of a-Si:H/c-Si heterojunction interface properties by admittance spectroscopy. 4th AMS (international conference on Amorphous ans Microcrystalline Semiconductors), 2004, Russia. 〈hal-00321101〉
  • Jean-Paul Kleider, Christophe Longeaud, Marie-Estelle Gueunier. Determination of bandgap states characteristics using the modulated photocurrent technique in both low and high frequency regimes. 4th AMS (international conference on Amorphous and Microcrystalline Semiconductors), 2004, Russia. 〈hal-00321032〉
  • Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Christophe Longeaud. Technique du photocourant modulé pour la caractérisation des états localisés dans la bande interdite des semiconducteurs en couches minces. Séminaire RDT photovoltaïque CNRS-ADEME, Matériaux et procédés pour la conversion photovoltaïque de l'énergie solaire, 2004, France. 2004. 〈hal-00321088〉
  • J. Damon-Lacoste, Pere Roca I Cabarrocas, P.J. Ribeyron, E. Rolland, Alexander Gudovskikh, et al.. Projet SiNERGIES, T 4.3: hétérojonctions c-Si/a-Si:H pour fabrication basse température. Séminaire RDT photovoltaïque CNRS-ADEME, Matériaux et procédés pour la conversion photovoltaïque de l'énergie solaire, 2004, France. 2004. 〈hal-00321091〉
  • J. Damon-Lacoste, Pere Roca I Cabarrocas, P.J. Ribeyron, E. Rolland, J.P. Kleider, et al.. Hétérojonctions c-Si/a-Si:H pour fabrication basse température. Rencontres et Journées Techniques sur les Matériaux et Procédés pour la Conversion Photovoltaïque de l'Énergie Solaire, 2004, Sophia-Antipolis, France. Actes pp.101-104, 2004. 〈hal-00021954〉

Poster41 documents

  • R Brüggemann, Ming Xu, J Alvarez, Mohamed Boutchich, Jean-Paul Kleider. Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements. Silicon PV 2017, Apr 2017, Freiburg, Germany. 〈hal-01632914〉
  • Alexander S. Gudovskikh, A.V. Uvarov, Ivan A. Morozov, Artem Baranov, D. A. Kudryashov, et al.. n-GaP/p-Si heterojunction solar cells fabricated by PE-ALD. E-MRS 2017 Spring Meeting, May 2017, Strasbourg, France. 〈hal-01632938〉
  • Artem Baranov, Alexander S. Gudovskikh, Arouna Darga, Sylvain Le Gall, Jean-Paul Kleider. Capacitance characterization of GaP/n-Si structures grown by PE-ALD. Saint-Petersburg OPEN 2017, 4th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Apr 2017, Saint-Petersburg, Russia. 〈hal-01632950〉
  • Artem Baranov, Alexander S. Gudovskikh, D. A. Kudryashov, A. Mozharov, Kirill S. Zelentsov, et al.. Admittance spectroscopy of InGaNAs layers in solar cells. Saint-Petersburg OPEN 2017, 4th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Apr 2017, Saint-Petersburg, Russia. 〈hal-01632946〉
  • Alexandra Levtchenko, Raphaël Lachaume, Jérôme Michallon, Stéphane Collin, J Alvarez, et al.. Couplage des modélisations électriques/optiques pour l'étude de cellules à base de nanofils a-Si:H. Journées Nationales du Photovoltaïque 2017, Dec 2017, Dourdan, France. 〈hal-01633176〉
  • Audrey Morisset, Raphaël Cabal, Bernadette Grange, J Alvarez, Marie-Estelle Gueunier-Farret, et al.. Développement de poly-silicium dope Bore par voie PECVD pour la passivation des contacts des cellules solaires. Journées Nationales du Photovoltaïque 2017, Dec 2017, Dourdan, France. 〈hal-01633178〉
  • Letian Dai, Mutaz Al-Ghzaiwat, Wanghua Chen, Martin Foldyna, Isabelle Maurin, et al.. SnO2 nanoparticles as catalyst precursors for plasma-assisted VLS growth with controlled surface density. Journées Nationales du Photovoltaïque 2017, Dec 2017, Dourdan, France. 〈hal-01633179〉
  • Baptiste Bérenguier, Daniel Ory, Jean-Paul Kleider, Laurent Lombez. Photoluminescence modulée haute fréquence : un outil puissant pour l'étude des centres recombinants dans les absorbeurs en couche minces. Journées Nationales du Photovoltaïque 2017, Dec 2017, Dourdan, France. 〈hal-01633182〉
  • Clément Marchat, Audrey Morisset, J Alvarez, Raphaël Cabal, Sebastien Dubois, et al.. Cartographie du photo-courant sur des jonctions à contact passivant en silicium poly-cristallin sur oxyde. Journées Nationales du Photovoltaïque 2017, Dec 2017, Dourdan, France. 〈hal-01633184〉
  • Alexandra Levtchenko, Raphaël Lachaume, Rudolf Brüggemann, Hrachya Kyureghian, Alexandre Jaffré, et al.. Application de la technique de photocourant modulé (MPC) aux cellules à hétérojonctions c-Si / a-Si:H. Journées Nationales du Photovoltaïque 2017, Dec 2017, Dourdan, France. 〈hal-01633186〉
  • Thibaut Perin, N. Feldberg, N. Fèvre, G. Kremer, Sylvain Le Gall, et al.. Prospective analysis of optoelectronic properties of ZnSnN2 for future tandem solar cells. Journées Nationales du Photovoltaïque 2017, Dec 2017, Dourdan, France. 〈hal-01633190〉
  • Raphaël Lachaume, Martin Foldyna, Gwenaelle Hamon, Nicolas Vaissière, Jean Decobert, et al.. Inverse metamorphic III-V/epi-SiGe tandem solar cell performance assessed by optical and electrical modeling. International 2017 IEEE Photovoltaic Specialists Conference, 2017 IEEE PVSC-44, Jun 2017, Washington D.C., United States. 〈hal-01632952〉
  • N. Zerounian, A. S. Grimault-Jacquin, Frédéric Aniel, Jean-Paul Kleider, P.Roca I Cabarrocas. Mesure de la permittivité du a-Si:H entre 0.5 et 3 THz. XXèmes Journées Microondes, May 2017, Saint-Malo, France. 〈hal-01632961〉
  • Letian Dai, Mutaz Al-Ghzaiwat, Wanghua Chen, Martin Foldyna, Isabelle Maurin, et al.. Optimizing tin dioxide nanoparticles distribution for silicon nanowires growth. Nanowire week, May 2017, Lund, Sweden. 〈hal-01632957〉
  • Alexandre Jaffré, José Alvarez, Denis Mencaraglia, James Patrick Connolly, Timothée Molière, et al.. Micro-photoluminescence investigation of the doping level in single GaAs crystals epitaxially grown on silicon for multijunction solar cells. European Materials Research Society, May 2017, Strasbourg, France. 〈hal-01629676〉
  • J.P. Connolly, J Alvarez, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Clément Marchat, et al.. Numerical analysis of kelvin probe force microscopy. Journées Nationales du Photovoltaïque 2017, Dec 2017, Dourdan, France. 〈hal-01633187〉
  • Alexandra Levtchenko, Aurore Brézard-Oudot, Alexandre Jaffré, J Alvarez, Artem Baranov, et al.. Etude des propriétés photoélectriques de couches de GaP deposées à basse température par des mesures de conductivité et de photocourant modulé. Journées Nationales du Photovoltaïque (JNPV 2016), Nov 2016, Dourdan, France. 〈hal-01475039〉
  • David Reaux, J Alvarez, Jean-Paul Kleider. Modélisation des états d'interfaces dans les cellules à hétérojonctions a-Si:H/c-Si avec l'utilisation du modèle du Defect-Pool. Journées Nationales du Photovoltaïque (JNPV 2016), Nov 2016, Dourdan, France. 〈hal-01475052〉
  • Martin Rudolph, Dana Stanescu, J Alvarez, E. Foy, Jean-Paul Kleider, et al.. Hydrogen from the photoelectrolysis of water using magnetron-sputtered thin films of Ta3N5. Workshop Transition énergétique, Oct 2016, Saclay, France. 〈hal-01475715〉
  • Gwenaëlle Hamon, Jean Decobert, N. Vaissiere, Raphaël Lachaume, Romain Cariou, et al.. Direct growth of crystalline Silicon on GaAs by Low Temperature PECVD: toward hybrid tunnel junctions for III-V/Si tandem cells. 43rd IEEE PV Specialists Conference, Jun 2016, Portland, United States. 〈hal-01363728〉
  • Raphaël Lachaume, Martin Foldyna, Gwenaëlle Hamon, Jean Decobert, Romain Cariou, et al.. In-Depth Analysis of III-V/Epi-SiGe Tandem Solar Cell Performance Including Advanced Light Trapping Schemes. Photovoltaic Technical Conference, PVTC 2016, May 2016, Marseille, France. From advanced materials and processes to innovative applications. 〈http://www.photovoltaic-technical-conference.com/〉. 〈hal-01363733〉
  • Artem Baranov, A.S. Gudovskikh, E.V. Nikitina, Jean-Paul Kleider, Arouna Darga. Defect study of Ga(In)P(NAs) based solar cells grown on silicon. E-MRS 2016, May 2016, Lille, France. 〈hal-01363691〉
  • Nicolas Vaissière, Gwenaëlle Hamon, Raphaël Lachaume, Wanghua Chen, Jean Decobert, et al.. Si1-xGex alloys on III-V (100): first steps in film growth by low temperature PECVD epitaxy. Journées Nationales du Photovoltaïque (JNPV), Nov 2016, Dourdan, France. 2016. 〈hal-01424658〉
  • Letian Dai, Martin Foldyna, Mutaz Al-Ghzaiwat, Wanghua Chen, Isabelle Maurin, et al.. Tandem radial-junction silicon nanowire solar cells fabricated by PECVD. Journées Nationales du Photovoltaïque (JNPV), Nov 2016, Dourdan, France. 2016, 〈http://jnpv.geeps.centralesupelec.fr/index.php/sessions〉. 〈hal-01424667〉
  • David Reaux, J Alvarez, Jean-Paul Kleider. Analysis of the recombination in a-Si:H/c-Si heterojunctions including the Defect-Pool model. SiliconPV 2016, Mar 2016, Chambéry, France. 〈hal-01395736〉
  • Alexander Korovin, J Alvarez, Jean-Paul Kleider. Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells. SiliconPV 2016, Mar 2016, Chambéry, France. 〈hal-01395733〉
  • Tristan Carrere, Jérôme Le Perchec, Delfina Munoz, Jean-Paul Kleider. Towards Homo-heterojunction solar cell processing: passivation of boron-doped c-Si surfaces with amorphous silicon. SiliconPV 2016, Mar 2016, Chambéry, France. 〈hal-01395735〉
  • Raphaël Lachaume, Christophe Longeaud, Jean-Paul Kleider. New insights into the modulated photocurrent technique using 2D full numerical simulations. Journées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France. 〈hal-01238538〉
  • David Reaux, José Alvarez, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Modélisation de la densité de défauts de surface des heterojunctions c-Si/a-Si:H en utilisant le modèle du Defect-Pool. Journées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France. 〈hal-01238539〉
  • Artem Baranov, A.S. Gudovskikh, E.V. Nikitina, Jean-Paul Kleider, Arouna Darga. Admittance spectroscopy of Ga(In)P(NAs) based solar cells grown on silicon. Journées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France. 〈hal-01238537〉
  • A. Roigé, Alexandre Jaffré, José Alvarez, Isidro Martin, R. Alcubilla, et al.. Degradation of surface passivation at the surroundings of laser processed regions in c-Si solar cells studied by micro-photoluminescence. Journées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France. 〈hal-01238541〉
  • Tristan Carrere, Renaud Varache, Jérôme Le Perchec, Christine Denis, Delfina Munoz, et al.. Silicon bulk issues during processing of homo-heterojunction solar cells. 5th International Conference on Silicon Photovoltaics, SiliconPV 2015, Mar 2015, Konstanz, Germany. 〈hal-01232104〉
  • David Reaux, J Alvarez, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Impact of defect-pool model parameters on the lifetime in c-Si/a-Si:H heterojunction solar cells. 5th International Conference on Silicon Photovoltaics, Silicon PV, Mar 2015, Konstanz, Germany. 〈hal-01232099〉
  • Paul Narchi, José Alvarez, Pascal Chrétien, Gennaro Picardi, Romain Cariou, et al.. Cross-sectional investigations on epitaxial silicon solar cells by Kelvin and Conducting Probe Atomic Force Microscopy: Effect of illumination. Journées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France. 〈hal-01238543〉
  • Arouna Darga, Djicknoum Diouf, Artem Baranov, Jean-Paul Kleider. Deep-level transient spectroscopy (DLTS) TCAD-based simulation. Journées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France. 〈http://jnpv.geeps.centralesupelec.fr/index.php/les-jnpv-2015〉. 〈hal-01253399〉
  • Fethullah Gunes, David Alamarguy, Hakim Arezki, Alexandre Jaffré, José Alvarez, et al.. Nitric Acid doping of epitaxial graphene on SiC (0001) substrate. Graphene 2014, May 2014, Toulouse, France. Proceedings of the 4th edition of Graphene Conference. 〈hal-01104503〉
  • M. Xu, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Mohamed Boutchich, et al.. Photoluminescence techniques for heterojunction solar cell characterization. JNPV 2014, Dec 2014, Dourdan, France. Actes des Journées Nationales du PhotoVoltaïque. 〈hal-01099349〉
  • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Fethullah Gunes, José Alvarez, et al.. Role of Anions in the AuCl3-Doping Trilayers N-doped Graphene on 4H-SiC (0001). IRAGO 2014, Nov 2014, Tsukuba, Japan. pp.7P8. 〈hal-01104496〉
  • Ming Xu, Alexandre Jaffré, José Alvarez, Jean-Paul Kleider, Apichat Jittrong, et al.. Spatially resolved photoluminescence on multi stack InAs quantum dots. IRAGO 2014, Nov 2014, Tsukuba, Japan. pp.7P2. 〈hal-01104500〉
  • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Fethullah Gunes, Ali Madouri, et al.. Engineering of CVD graphene optoelectronic properties Application as transparent electrode in solar cells. CMD25-JMC14, Aug 2014, Paris, France. 〈hal-01104502〉
  • David Réaux, Jean-Paul Kleider, Marie-Estelle Gueunier-Farret. Modeling of the surface defects density in c-Si/a-Si:H heterojunction using the Defect-Pool Model. JNPV 2014, Dec 2014, Dourdan, France. Actes des Journées Nationales du PhotoVoltaïque. 〈hal-01099351〉

Chapitre d'ouvrage4 documents

  • Jean-Paul Kleider. Effet photovoltaïque : principes physiques. Sous la direction de Rémy Mosseri et Catherine Jeandel. L'énergie à découvert, CNRS Éditions, 48p., 2013, Collection: A découvert. 〈hal-00931388〉
  • S. Martinuzzi, A. Slaoui, J.P. Kleider, M. Lemiti, A. Trassy, et al.. Silicon solar cells, crystalline. Encyclopedia of Sustainability Science and Technology, edited by R.A. Meyers, Springer, pp. 9196-9240, 2012, 978-0-387-89469-0 (Print) - 978-1-4419-0851-3 (Online). 〈hal-00835663〉
  • Jean-Paul Kleider. Theory of heterojunctions and the determination of band offsets from electrical measurements. Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, Springer, pp.405-444, 2011. 〈hal-00715287〉
  • D. Diouf, Jean-Paul Kleider, Christophe Longeaud. Two-dimensional simulations of interdigitated back contact silicon heterojunctions solar cells. Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, Springer-Verlag, pp.483-519, 2011. 〈hal-00715294〉

Brevet3 documents

  • Zakaria Djebbour, Anne Migan-Dubois, Walid El-Huni, Jean-Paul Kleider. Cellule photovoltaïque. France, N° de brevet: FR 15 61893. 2016. 〈hal-01420613〉
  • José Alvarez, Jean-Paul Kleider, M.Y. Liao, Y. Koide. Planar UV diamond detectors based on hydrogenation and subsequent ozone treatments. Patent n° : JP2008 027232. 2008. 〈hal-00354237〉
  • Jean-Paul Kleider, C. Godet, Alexander Gudovskikh. Dispositif et procédé à capacité commandable. N° de brevet: 06/05952. 2006. 〈hal-00321925〉

Autre publication2 documents

  • Rémy Chouffot, Samah Ibrahim, R. Brüggemann, A.S. Gudovskikh, Jean-Paul Kleider, et al.. Comparison of photoluminescence and capacitance spectroscopies as efficient tools for interface characterisation of heterojunction solar cells. Séminaire à l'université de Hagen. 2007. 〈hal-00322314〉
  • Jean-Paul Kleider. The Modulated PhotoCurrent technique. Séminaire à l'Université d'Oldenburg. 2006. 〈hal-00321922〉