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Jean-Marc Galliere

12

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938340

	Delay Testing Viability of Gate Oxide Short Defect Jean-Marc J.-M. Galliere , Michel Renovell , Florence Azaïs , Yves Bertrand Journal of Computer Science and Technology, 2005, 20 (2), pp.195-200. ⟨10.1007/s11390-005-0195-x⟩ Article dans une revue lirmm-00105323v1
	Viability of a Delay Testing of Gate Oxide Short Transistors Jean-Marc J.-M. Galliere , Michel Renovell , Florence Azaïs , Yves Bertrand Journal of Computer Science and Technology, 2005, 20 (2), pp.6. ⟨10.1007/s11390-005-0195-x⟩ Article dans une revue lirmm-00370370v1
	A Compact DC Model of Gate Oxide Short Defect Rachid Bouchakour , Jean-Michel Portal , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand Microelectronic Engineering, 2004, 72 (1-4), pp.140-148. ⟨10.1016/j.mee.2003.12.051⟩ Article dans une revue lirmm-00108564v1
	Modeling the Random Parameter Effects in a Non-Split Model of Gate Oxide Short Michel Renovell , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand Journal of Electronic Testing: : Theory and Applications, 2003, 19 (4), pp. 377-386. ⟨10.1023/A:1024683708105⟩ Article dans une revue lirmm-00269754v1

	GOSMOS: A Gate Oxide Short Defect Embedded in a MOS Compact Model Michel Renovell , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand , Jean-Michel Portal LATW: Latin American Test Workshop, Feb 2003, Natal, Brazil Communication dans un congrès lirmm-00269604v1
	Delay Testing of MOS Transistor with Gate Oxide Short Michel Renovell , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand ATS: Asian Test Symposium, Nov 2003, Xian, China. pp.168-173 Communication dans un congrès lirmm-00269641v1
	Modeling Gate Oxide Short Defects in CMOS Minimum Transistors Michel Renovell , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand ETW: European Test Workshop, 2002, Corfu, Greece. pp.15-20 Communication dans un congrès lirmm-00268527v1
	A Non-Split Model for Realistic Gate Oxide Short in CMOS Technology Michel Renovell , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand DCIS: Design of Circuits and Integrated Systems, 2002, Santander, Spain. pp.197-204 Communication dans un congrès lirmm-00268432v1
	Non-Linear and Non-Split Transistor MOS Model for Gate Oxyde Short Michel Renovell , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand DBT: Defect Based Testing, Apr 2002, Monterey, CA, United States. pp.11-16 Communication dans un congrès lirmm-00269333v1
	Low Voltage Testing of Gate Oxide Short in CMOS Technology Michel Renovell , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand DDECS: Design and Diagnostics of Electronic Circuits and Systems, 2002, Brno, Czech Republic. pp.168-174 Communication dans un congrès lirmm-00268526v1
	Boolean and Current Detection of MOS Transistor with Gate Oxide Short Michel Renovell , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand IEEE International Test Conference, Oct 2001, Baltimore, USA, pp.10 Communication dans un congrès lirmm-00370400v1

	A Compact Model for Electrical Simulation of MOS Transistor with Gate Oxide Short Defect Michel Renovell , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand , Jean-Michel Portal [Research Report] 04080, Lirmm, University of Montpellier. 2004 Rapport lirmm-00109221v1