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	A Compact DC Model of Gate Oxide Short Defect Rachid Bouchakour , Jean-Michel Portal , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand Microelectronic Engineering, 2004, 72 (1-4), pp.140-148. ⟨10.1016/j.mee.2003.12.051⟩ Article dans une revue lirmm-00108564v1

	Impact of Gate Oxide Reduction Failure on Analog Applications: Example of the Current Mirror S. Bernardini , P. Masson , Jean-Michel Portal , Jean-Marc J.-M. Galliere , Michel Renovell LATW: Latin American Test Workshop, Mar 2004, Cartagena, Spain. pp.12-17 Communication dans un congrès lirmm-00108659v1
	GOSMOS: A Gate Oxide Short Defect Embedded in a MOS Compact Model Michel Renovell , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand , Jean-Michel Portal LATW: Latin American Test Workshop, Feb 2003, Natal, Brazil Communication dans un congrès lirmm-00269604v1

	A Compact Model for Electrical Simulation of MOS Transistor with Gate Oxide Short Defect Michel Renovell , Jean-Marc J.-M. Galliere , Florence Azaïs , Yves Bertrand , Jean-Michel Portal [Research Report] 04080, Lirmm, University of Montpellier. 2004 Rapport lirmm-00109221v1

Jean-Marc Galliere