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Jean-Luc Rouviere

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The influence of illumination conditions in the measurement of built-in electric field at p–n junctions by 4D-STEM

Bruno C da Silva , Zahra S Momtaz , Lucas Bruas , Jean-Luc Rouviére , Hanako Okuno
Applied Physics Letters, 2022, 121 (12), pp.123503. ⟨10.1063/5.0104861⟩
Article dans une revue hal-03832206v1

High-sensitivity mapping of magnetic induction fields with nanometer-scale resolution: comparison of off-axis electron holography and pixelated differential phase contrast

Victor Boureau , Michal Staňo , Jean-Luc Rouviere , Jean-Christophe Toussaint , Olivier Fruchart
Journal of Physics D: Applied Physics, 2021, 54 (8), pp.085001. ⟨10.1088/1361-6463/abc77d⟩
Article dans une revue hal-02919930v1
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The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

Bruno Daudin , Alexandra-Madalina Siladie , Marion Gruart , M. den Hertog , Catherine Bougerol
Nanotechnology, 2021, 32 (8), pp.085606. ⟨10.1088/1361-6528/abc780⟩
Article dans une revue hal-03429491v1
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Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy

Bruno Daudin , Fabrice Donatini , Catherine Bougerol , Bruno Gayral , Edith Bellet-Amalric
Nanotechnology, 2021, 32 (2), pp.025601. ⟨10.1088/1361-6528/abb6a5⟩
Article dans une revue hal-02991749v1
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Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure

D. V. Beznasyuk , P. Stepanov , Jean-Luc Rouvière , F. Glas , M. Verheijen
Physical Review Materials, 2020, 4 (7), pp.074607. ⟨10.1103/PhysRevMaterials.4.074607⟩
Article dans une revue hal-02429832v1

Improved measurement of electric fields by nanobeam precession electron diffraction

L. Bruas , V. Boureau , A. Conlan , S. Martinie , Jean-Luc Rouviere
Journal of Applied Physics, 2020, 127 (20), pp.205703. ⟨10.1063/5.0006969⟩
Article dans une revue hal-03798997v1
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Studying phase change memory devices by coupling scanning precession electron diffraction and energy dispersive X-ray analysis

Loïc Henry , Nicolas Bernier , Martin Jacob , Gabriele Navarro , Laurent Clément
Acta Materialia, 2020, 201, pp.72 - 78. ⟨10.1016/j.actamat.2020.09.033⟩
Article dans une revue hal-03493618v1
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In Situ Transmission Electron Microscopy Analysis of Aluminum–Germanium Nanowire Solid-State Reaction

Khalil El Hajraoui , Minh Anh Luong , Eric Robin , Florian Brunbauer , Clemens Zeiner
Nano Letters, 2019, 19 (5), pp.2897-2904. ⟨10.1021/acs.nanolett.8b05171⟩
Article dans une revue hal-02910070v1
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Direct comparison of off-axis holography and differential phase contrast for the mapping of electric fields in semiconductors by transmission electron microscopy

Benedikt Haas , Jean-Luc Rouviere , Victor Boureau , Remy Berthier , David Cooper
Ultramicroscopy, 2019, 198, pp.58-72. ⟨10.1016/j.ultramic.2018.12.003⟩
Article dans une revue cea-02186458v1
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Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

Alexandre Concordel , Gwenolé Jacopin , Bruno Gayral , Núria Garro , Ana Cros
Applied Physics Letters, 2019, 114 (17), pp.172101. ⟨10.1063/1.5094627⟩
Article dans une revue hal-02127433v1

Understanding the Crystallization Behavior of Surface-Oxidized GeTe Thin Films for Phase-Change Memory Application

Andrea Kolb , Nicolas Bernier , Eric Robin , Anass Benayad , Jean-Luc Rouviere
ACS Applied Electronic Materials, 2019, 1 (5), pp.701-710. ⟨10.1021/acsaelm.9b00070⟩
Article dans une revue hal-02311359v1
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Incommensurate grain boundary in silicon and the silver-ratio sequence

Frédéric Lançon , Nina Gunkelmann , Damien Caliste , Jean-Luc Rouvière
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2019, 100 (11), ⟨10.1103/PhysRevB.100.115307⟩
Article dans une revue hal-02284426v1
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In Situ Transmission Electron Microscopy Analysis of Copper–Germanium Nanowire Solid-State Reaction

Khalil El Hajraoui , Eric Robin , Clemens Zeiner , Alois Lugstein , Stéphanie Kodjikian
Nano Letters, 2019, 19 (12), pp.8365-8371. ⟨10.1021/acs.nanolett.9b01797⟩
Article dans une revue hal-02544426v1

Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain

Honggyu Kim , Yifei Meng , Ji-Hwan Kwon , Jean-Luc Rouviere , Jian Min Zuo
International Union of Crystallography journal, 2018, 5 (1), pp.67-72. ⟨10.1107/S2052252517016219⟩
Article dans une revue hal-02071865v1

Proposition of a model elucidating the AlN-on-Si (111) microstructure

N. Mante , S. Rennesson , E. Frayssinet , L. Largeau , F. Semond
Journal of Applied Physics, 2018, 123 (21), pp.215701. ⟨10.1063/1.5017550⟩
Article dans une revue hal-02322400v1

Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology

S. Reboh , R. Coquand , S. Barraud , N. Loubet , N. Bernier
Applied Physics Letters, 2018, 112 (5), pp.051901. ⟨10.1063/1.5010997⟩
Article dans une revue hal-02071864v1
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Comprehension of peculiar local emission behavior of InGaAs quantum well by colocalized nanocharacterization combining cathodoluminescence and electron microscopy techniques

Joyce Roque , Georges Beainy , Névine Rochat , Nicolas Bernier , Sylvain David
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2018, 36 (4), pp.042901. ⟨10.1116/1.5033363⟩
Article dans une revue hal-01947865v1

Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition

T. Cerba , M. Martin , J. Moeyaert , S. David , J. Rouvière
Thin Solid Films, 2018, 645, pp.5-9. ⟨10.1016/j.tsf.2017.10.024⟩
Article dans une revue hal-01954336v1

Graphene as a Mechanically Active, Deformable Two-Dimensional Surfactant

Sergio Vlaic , Nicolas Rougemaille , Alexandre Artaud , Vincent Renard , Loic Huder
Journal of Physical Chemistry Letters, 2018, 9 (10), pp.2523-2531. ⟨10.1021/acs.jpclett.8b00586⟩
Article dans une revue hal-01781881v1

Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate

J. Roque , B. Haas , S. David , N. Rochat , N. Bernier
Applied Physics Letters, 2018, 112 (20), pp.202104. ⟨10.1063/1.5027163⟩
Article dans une revue hal-01947882v1

Growth and structural properties of step-graded, high Sn content GeSn layers on Ge

J Aubin , J. Hartmann , A. Gassenq , J. Rouvière , Eric Robin
Semiconductor Science and Technology, 2017, 32 (9), pp.094006
Article dans une revue hal-02045752v1

High-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffraction

David Cooper , Nicolas Bernier , Jean-Luc Rouviere , Jean-Luc Rouvière , Yun-Yu Wang
Applied Physics Letters, 2017, 110 (22), pp.223109
Article dans une revue hal-01998271v1

High precision strain mapping of topological insulator HgTe/CdTe

Benedikt Haas , Candice Thomas , Pierre-Henri Jouneau , Nicolas Bernier , Tristan Meunier
Applied Physics Letters, 2017, 110 (26), pp.263102. ⟨10.1063/1.4989822⟩
Article dans une revue hal-01980854v1

Peak separation method for sub-lattice strain analysis at atomic resolution: Application to InAs/GaSb superlattice

Honggyu Kim , Yifei Meng , Jean-Luc Rouviere , Jian-Min Zuo
Micron, 2017, 92, pp.6-12. ⟨10.1016/j.micron.2016.10.003⟩
Article dans une revue hal-02071868v1

High quality epitaxial fluorine-doped SnO2 films by ultrasonic spray pyrolysis: Structural and physical property investigation

Shan-Ting Zhang , Jean-Luc Rouvière , Vincent Consonni , Hervé Roussel , Laetitia Rapenne
Materials & Design, 2017, 132, pp.518-525. ⟨10.1016/j.matdes.2017.07.037⟩
Article dans une revue hal-01758851v1

Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements

B. Bonef , B. Haas , J-L. Rouvière , R. André , C. Bougerol
Journal of Microscopy, 2016, 262 (2), pp.178 - 182. ⟨10.1111/jmi.12340⟩
Article dans une revue hal-01390785v1

Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope

David Cooper , Thibaud Denneulin , Nicolas Bernier , Armand Beche , Jean-Luc Rouviere
Micron, 2016, 80, pp.145-165. ⟨10.1016/j.micron.2015.09.001⟩
Article dans une revue cea-01849438v1

InGaN nanowires with high InN molar fraction: growth, structural and optical properties

Xin Zhang , Hugo Lourenco-Martins , Sophie Meuret , Mathieu Kociak , Benedikt Haas
Nanotechnology, 2016, 27 (19), pp.195704. ⟨10.1088/0957-4484/27/19/195704⟩
Article dans une revue cea-01851934v1

Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model

Johan Pelloux-Prayer , Mikael Casse , Francois Triozon , Sylvain Barraud , Yann-Michel Niquet
Solid-State Electronics, 2016, 125, pp.175-181. ⟨10.1016/j.sse.2016.09.002⟩
Article dans une revue cea-01851576v1

Growth mechanism of InGaN nanoumbrellas

Xin Zhang , Benedikt Haas , Jean-Luc Rouviere , Eric Robin , Bruno Daudin
Nanotechnology, 2016, 27 (45), pp.455603. ⟨10.1088/0957-4484/27/45/455603⟩
Article dans une revue cea-01851933v1

Towards a full retrieval of the deformation tensor F using convergent beam electron diffraction

Yannick Martin , Jean-Luc Rouviere , J. M. Zuo , Vincent Favre-Nicolin
Ultramicroscopy, 2016, 160, pp.64-73. ⟨10.1016/j.ulisamic.2014.12.009⟩
Article dans une revue cea-01851578v1

Solving difficult structures with electron diffraction

J. M. Zuo , Jean-Luc Rouvière
International Union of Crystallography journal, 2015, 2, pp.7-8. ⟨10.1107/s2052252514026797⟩
Article dans une revue hal-01616541v1

Combining 2 nm Spatial Resolution and 0.02% Precision for Deformation Mapping of Semiconductor Specimens in a Transmission Electron Microscope by Precession Electron Diffraction

David Cooper , Nicolas Bernier , Jean-Luc Rouvière
Nano Letters, 2015, 15 (8), pp.5289-5294. ⟨10.1021/acs.nanolett.5b01614⟩
Article dans une revue hal-01588268v1

Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography

Y. Y. Wang , David Cooper , Jean-Luc Rouvière , C. E. Murray , N. Bernier
Applied Physics Letters, 2015, 106 (4), pp.042104. ⟨10.1063/1.4906513⟩
Article dans une revue hal-01616542v1

The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires

Thomas Auzelle , Benedikt Haas , Albert Minj , Catherine Bougerol , Jean-Luc Rouviere
Journal of Applied Physics, 2015, 117 (24), pp.245303. ⟨10.1063/1.4923024⟩
Article dans une revue hal-02071872v1
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Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography

Bastien Bonef , Lionel Gérard , Jean-Luc Rouvière , Adeline Grenier , Pierre-Henri Jouneau
Applied Physics Letters, 2015, 106 (5), pp.051904. ⟨10.1063/1.4907648⟩
Article dans une revue hal-01132475v1
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Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries

Thomas Auzelle , Benedikt Haas , Martien den Hertog , Jean-Luc Rouvière , Bruno Daudin
Applied Physics Letters, 2015, 107 (5), pp.051904. ⟨10.1063/1.4927826⟩
Article dans une revue hal-01586122v1

Practical aspects of strain measurement in thin SiGe layers by (004) dark-field electron holography in Lorentz mode

Thibaud Denneulin , D. Cooper , J.L. Rouvière
Micron, 2014, 62, pp.52-65. ⟨10.1016/j.micron.2014.02.017⟩
Article dans une revue hal-02071149v1
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Strain mapping at the nanoscale using precession electron diffraction in transmission electron microscope with off axis camera

Matthieu M.P. Vigouroux , V. Delaye , N. N. Bernier , R. Cipro , D. Lafond
Applied Physics Letters, 2014, 105 (19), pp.191906. ⟨10.1063/1.4901435⟩
Article dans une revue hal-01103079v1

Lattice and strain analysis of atomic resolution Z-contrast images based on template matching

Jian-Min Zuo , Amish Shah , Honggyu Kim , Yifei Meng , Wenpei Gao
Ultramicroscopy, 2014, 136, pp.50-60. ⟨10.1016/j.ultramic.2013.07.018⟩
Article dans une revue hal-01972657v1

Digital model for X-ray diffraction with application to composition and strain determination in strained InAs/GaSb superlattices

Yifei Meng , Honggyu Kim , Jean-Luc Rouviere , Dieter Isheim , David Seidman
Journal of Applied Physics, 2014, 116 (1), pp.013513. ⟨10.1063/1.4887078⟩
Article dans une revue hal-02071157v1

Measuring Lattice Parameters and Local Rotation using Convergent Beam Electron Diffraction: One Step Further

Y. Martin , J.-M. Zuo , V. Favre-Nicolin , J.-L. Rouvière
Microscopy and Microanalysis, 2013, 19 (S2), pp.710-711. ⟨10.1017/S1431927613005540⟩
Article dans une revue hal-02071123v1

Microstructural void environment characterization by electron imaging in 45 nm technology node to link electromigration and copper microstructure

R. Galand , G. Brunetti , L. Arnaud , J.L. Rouviere , L. Clement
Microelectronic Engineering, 2013, 106, pp.168-171. ⟨10.1016/j.mee.2013.01.018⟩
Article dans une revue hal-00850231v1
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The addition of strain in uniaxially strained transistors by both SiN contact etch stop layers and recessed SiGe sources and drains

Thibaud Denneulin , David Cooper , Jean-Michel Hartmann , Jean-Luc Rouvière
Journal of Applied Physics, 2012, 112 (9), pp.094314. ⟨10.1063/1.4764045⟩
Article dans une revue hal-02145343v1

Correlation of polarity and crystal structure with optoelectronic and transport properties of GaN/AlN/GaN nanowire sensors

Martien den Hertog , F. Gonzalez-Posada , Rudeesun Songmuang , Jean-Luc Rouviere , Thierry Fournier
Nano Letters, 2012, 12, pp.5691-5696. ⟨10.1021/nl302890f⟩
Article dans une revue hal-00863667v1

Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering

D. Jalabert , D. Pelloux-Gervais , A. Béché , J. Hartmann , P. Gergaud
physica status solidi (a), 2012, 209 (2), pp.262-265
Article dans une revue hal-01965024v1

Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis

M.-I. Richard , J.-L. Rouvière , T.-S. Yoon , E. Holmström , Y.-H. Xie
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84 (7), pp.075314. ⟨10.1103/PhysRevB.84.075314⟩
Article dans une revue hal-01811420v1
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Hidden defects in silicon nanowires

Martien den Hertog , Cyril Cayron , Pascal Gentile , Florian Dhalluin , Fabrice Oehle
Nanotechnology, 2011, 23, pp.025701. ⟨10.1088/0957-4484/23/2/025701⟩
Article dans une revue hal-00719753v1

Confirmation of the Domino-Cascade Model by LiFePO(4)/FePO(4) Precession Electron Diffraction

G. Brunetti , D. Robert , P. Bayle-Guillemaud , J.L. Rouviere , E.F. Rauch
Chemistry of Materials, 2011, 23 (20), pp.4515-4524. ⟨10.1021/cm201783z⟩
Article dans une revue hal-00664175v1

Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins

C. Cayron , M. den Hertog , L. Latu-Romain , C. Mouchet , C. Secouard
Journal of Applied Crystallography, 2009, 42, (2009), p1-11
Article dans une revue hal-00394399v1

Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires

B. Salem , F. Dhalluin , T. Baron , H. Jamgotchian , F. Bedu
Materials Science and Engineering: B, 2009, 159-160, pp.83-86
Article dans une revue hal-00453724v1

The morphology of silicon nanowires grown in the presence of trimethylaluminium

F. Oehler , P. Gentile , T. Baron , M. den Hertog , J.L. Rouviere
Nanotechnology, 2009, pp.20 (24): Art. No. 245602 JUN 17 2009
Article dans une revue hal-00455406v1

Alternate dissociation of the screw dislocations in a (001) buried small-angle twist boundary in silicon

R. Bonnet , M. Loubradou , S. Youssef , J.L. Rouvière , F. Fournel
Philosophical Magazine, 2009, 89 (5), pp.413-434
Article dans une revue hal-00389424v1

Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires

B. Salem , F. Dhalluin , T. Baron , H. Jamgotchian , F. Bedu
Materials Science and Engineering, 2009, pp.B 159-160 83-86
Article dans une revue hal-00395832v1

Fabrication of Well-Organized and Densely Packed Si Nanopillars Containing SiGe Nanodots by Using Block Copolymer Templates

K. Aissou , T. Baron , M. Kogelschatz , M. den Hertog , J.L. Rouviere
Chemistry of Materials, 2008, pp.20 6183-6188
Article dans une revue hal-00394788v1

Silicon nanowires grown in nanoporous alumina matrices on <100> oriented silicon substrates investigated by electron microscopy

T. David , D. Buttard , M. den Hertog , P. Gentile , T. Baron
Superlatice and Microstructures, 2008, pp.44 (4-5) October-November (2008) 354-361
Article dans une revue hal-00394793v1

A new architecture for self-organized silicon nanowire growth integrated on a (100) silicon substrate

D. Buttard , T. David , P. Gentile , M. den Hertog , T. Baron
physica status solidi (a), 2008, pp.Vol 205, Issue 7, July (2008) 1606-1614
Article dans une revue hal-00394787v1
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Control of gold surface diffusion on Si nanowires

Martien den Hertog , Jean-Luc Rouvière , Florian Dhalluin , Pierre Desré , Pascal Gentile
Nano Letters, 2008, 8, pp.1544-1550. ⟨10.1021/nl073356i⟩
Article dans une revue hal-00394786v1
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Crystal structure and band gap determination of HfO2 thin films

Marie Cheynet , Simone Pokrant , Frans Tichelaar , Jean-Luc Rouvière
Journal of Applied Physics, 2007, 101, pp.54101. ⟨10.1063/1.2697551⟩
Article dans une revue hal-00354604v1
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Critical condition for growth of silicon nanowires

Florian Dhalluin , Pierre J Desré , Martien den Hertog , Jean-Luc Rouviere , Pierre Ferret
Journal of Applied Physics, 2007, 102 (9), pp.094906. ⟨10.1063/1.2811935⟩
Article dans une revue hal-00394770v1

Quantitative analysis of HOLZ line splitting in CBED patterns of epitaxially strained layers

Florent Houdellier , Christian Roucau , L. Clement , J.L. Rouvière , Marie-José Casanove
Ultramicroscopy, 2006, 106 (10), pp.951 - 959. ⟨10.1016/j.ultramic.2006.04.011⟩
Article dans une revue hal-01707838v1

Strain distribution in nitride quantum dot multilayers

Virginie Chamard , T Schülli , M. Sztucki , T. H. Metzger , E. Sarigiannidou
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69, pp.125327. ⟨10.1103/PhysRevB.69.125327⟩
Article dans une revue hal-01253302v1

Growth and optical properties of GaN/AlN quantum wells

C. Adelmann , E. Sarigiannidou , D. Jalabert , Y. Hori , J.-L. Rouvière
Applied Physics Letters, 2003, 82 (23), pp.4154-4156. ⟨10.1063/1.1581386⟩
Article dans une revue hal-01975920v1

Confinement induced enhancement of the emission in Er-implanted Si/SiO2 quantum wells fabricated on SOI substrates

D. Sotta , V. Calvo , H. Ulmer-Tuffigo , N. Magnea , Emmanuel Hadji
Materials Science and Engineering: B, 2001, 81 (1-3), pp.43-45
Article dans une revue cea-01996944v1

Ultra thin silicon films directly bonded onto silicon wafers

F. Fournel , H. Moriceau , N. Magnea , J. Eymery , J.L Rouvière
Materials Science and Engineering: B, 2000, 73 (1-3), pp.42 - 46. ⟨10.1016/S0921-5107(99)00431-6⟩
Article dans une revue hal-01876883v1

Nanometric patterning with ultrathin twist bonded silicon wafers

F. Fournel , H. Moriceau , N. Magnea , J. Eymery , B Buttard
Thin Solid Films, 2000, 380 (1-2), pp.10 - 14. ⟨10.1016/S0040-6090(00)01460-7⟩
Article dans une revue hal-01876895v1

Transmission electron microscopy structural characterisation of GaN layers grown on (0001) sapphire

Jl Rouviere , M. Arlery , B. Daudin , G. Feuillet , Olivier Briot
Materials Science and Engineering: B, 1997, 50, pp.61-71
Article dans une revue hal-00546189v1

MOVPE growth and characterization of AlxGa1-xN

Sandra Ruffenach , Olivier Briot , Jl Rouviere , Bernard Gil , Roger Aulombard
Materials Science and Engineering: B, 1997, 50, pp.219-222
Article dans une revue hal-00546775v1

Comparative study of hexagonal and cubic GaN growth by RF-MBE

G. Feuillet , F. Widmann , B. Daudin , J. Schuler , M. Arlery
Materials Science and Engineering: B, 1997, 50, pp.233-237
Article dans une revue hal-00546192v1
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Titanium Evolution Under Neutron Irradiation in NixC1-x/Ti Multilayers

B. Ballot , K. N'Guy , A. Menelle , J. Mimault , T. Girardeau
Journal de Physique IV Proceedings, 1996, 06 (C2), pp.C2-171-C2-176. ⟨10.1051/jp4:1996224⟩
Article dans une revue jpa-00254202v1

Extended synchrotron X-ray reflectivity study of a Sm-based layer buried into CdTe(001)

N. Boudet , J. Eymery , G. Renaud , J.L. Rouvière , J.Y. Veuillen
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 1995, 327 (3), pp.L515 - L520. ⟨10.1016/0039-6028(95)00034-8⟩
Article dans une revue hal-01875058v1
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ANALYSIS OF STRUCTURES OF SYMMETRICAL [001] TILT GRAIN BOUNDARIES IN SILICON AND GERMANIUM

J.-L. Rouviere , A. Bourret
Journal de Physique Colloques, 1990, 51 (C1), pp.C1-329-C1-334. ⟨10.1051/jphyscol:1990152⟩
Article dans une revue jpa-00230313v1
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Apport du couplage broyage/ dissolution sur la dissolution d'oxydes réfractaires

J. Hidalgo , T. Delahaye , G. Leturcq , Jean-Luc Rouviere
Journée scientifique de Marcoule 2018 (JSM 2018), 2018, Bagnols sur cèze, France
Communication dans un congrès cea-02338633v1

InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOCVD for the fabrication of InAs FINFET

Tiphaine Cerba , Mickaël Martin , Jeremy Moeyaert , Reynald Alcotte , Bassem Salem
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 2018), Jun 2018, Nara, Japan
Communication dans un congrès hal-01954906v1

Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications

T. Cerba , M. Martin , J. Moeyaert , S. David , J.-L. Rouvière
E-MRS Fall meeting, Symposium M, 2017, Warsaw, Poland
Communication dans un congrès hal-01905730v1

Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications

Tiphaine Cerba , Mickaël Martin , Jeremy Moeyaert , Sylvain David , Jean-Luc Rouvière
2017 EMRS Fall Meeting, 2017, Warsaw, Poland
Communication dans un congrès hal-01891383v1

Anti-phase boundary free GaSb layers grown on (001)-Si substrates by Metal Organic Chemical Vapor Deposition

T. Cerba , M. Martin , J. Moeyaert , S. David , J.-L. Rouvière
17th European Workshop on Metalorganic Vapour Phase Epitaxy (EW-MOVPE17), 2017, grenoble, France
Communication dans un congrès hal-01891389v1

Transport in TriGate nanowire FET: Cross-section effect at the nanometer scale

J. Pelloux-Prayer , M. Cassé , S. Barraud , F. Triozon , Z. Zeng
2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2016, Burlingame, France. pp.1-2
Communication dans un congrès hal-02143469v1

Investigating the Nucleation and Growth of Quaternary Cu2ZnSnS4Nanocrystals

Fabio Agnese , Aurélie Lefrançois , Stéphanie Pouget , Louis Vaure , Ourania Makrygenni
European Microscopy Congress 2016, Aug 2016, Lyon, France. ⟨10.1002/9783527808465.EMC2016.5986⟩
Communication dans un congrès hal-03805183v1

Study of the piezoresistive properties of NMOS and PMOS Ω-gate SOI nanowire transistors: Scalability effects and high stress level

J. Pelloux-Prayer , M. Cassé , S. Barraud , P. Nguyen , M. Koyama
2014 IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, France. pp.20.5.1-20.5.4
Communication dans un congrès hal-02138872v1

Formation Study of Organized Nanodots and Nanowires through Copolymer Diblock Technology

C. Agraffeil , G. Gay , T. Baron , B. Salhi , M. Kogelschatz
A2 - Nanotechnology General Session 216th ECS Meeting, 2009, Vienne, Austria
Communication dans un congrès hal-00461111v1

Study of Si Nanowires Growth by CVD-VLS and Physical Properties

T. Baron , F. Dhalluin , B. Salem , B. Salhi , H. Abed
216th ECS Meeting in Vienna, 2009, Vienne, Austria
Communication dans un congrès hal-00461113v1

Croissance VLS de nanofils de Si de diamètre inférieur à 10 nm

F. Dhalluin , M. den Hertog , P. Gentile , P. Ferret , J.L. Rouviere
GDR Nanofils, 2007, Ecully, France
Communication dans un congrès hal-00396923v1

Investigation de films minces d'HfO2 par HRTEM et EELS (poster)

M.C. Cheynet , S. Pokrant , F. Tichelaar , J.L. Rouvière
Xème colloque de la Société Française des Microscopies, Jun 2007, Grenoble, France
Communication dans un congrès hal-00214154v1

Small-diameter silicon nanowires growth by CVD Au catalyzed

P. Gentile , T. David , D. Buttard , M. den Hertog , J.L. Rouviere
E-MRS, 2007, strasbourg, France
Communication dans un congrès hal-00395911v1

Catalyst Assisted Silicon Nanowires Growth for Nanoelectronics

F. Dhalluin , P. Desre , T. Baron , P. Ferret , B. Salem
E-MRS, 2007, strasbourg, France
Communication dans un congrès hal-00395914v1

Electron microscopy of gold catalyser silicon nanowires : defects in the wires and gold on the wires

M. den Hertog , J.L. Rouviere , F. Dhalluin , P. Gentile , P. Ferret
GDR Nanofils, 2007, ECULLY, France
Communication dans un congrès hal-00396921v1

Small diameter silicon nanowires growth by CVD Au catalyzed

P. Gentile , T. David , D. Buttard , M. den Hertog , J.L. Rouviere
397 WE-Heraeus-Seminar, 2007, Bonn, Germany
Communication dans un congrès hal-00396818v1

Feasibility of Si Nanowire Integration: CVD Growth, Characterization and Comparison of Au vs PtSi Catalysts

T. Baron , M. Gordon , F. Dhalluin , M. den Hertog , P. Ferret
2006 MRS Fall Meeting, 2006, Boston, United States
Communication dans un congrès hal-00390626v1

Gold Catalyzed Growth of Silicon Nanowires by Chemical Vapor Deposition

F. Dhalluin , T. Baron , P. Ferret , P. Gentile , J.L. Rouviere
E-MRS Spring Meeting, 2006, nice, France
Communication dans un congrès hal-00395858v1

Croissance catalytique de nanofils Si par VLS-CVD

F. Dhalluin , M. den Hertog , J.L. Rouviére , P. Gentile , P. Ferret
GDR Nanofils, 2006, Lille, France
Communication dans un congrès hal-00396915v1

Growth study of CVD Au calayzed Si nanowires and integration in an organized nanoporous alumina template

P. Gentile , T. David , D. Buttard , M. den Hertog , J.L. Rouviere
MRS Fall Meeting Boston, Symposium Q, 2006, boston, United States
Communication dans un congrès hal-00395869v1

Evidence of Au on lateral surfaces on Si nanowires

M. den Hertog , J.L. Rouviere , F. Dhalluin , P. Gentile , P. Ferret
GDR Nanofils, Jul 2006, lille, France
Communication dans un congrès hal-00396914v1

Chemical profiles in AlGaN/GaN quantum wells: a CTEM, HRTEM and EFTEM comparison

Jean-Luc Rouviere , Pascale Bayle-Guillemaud , G. Radtke , S. Groh , Olivier Briot
Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials, Mar 2001, OXFORD (ENGLAND), United Kingdom. pp.17-20
Communication dans un congrès hal-00546179v1

Evidence for atomic mixing induced in metallic bilayers by electronic energy deposition

R. Leguay , M.A. Dunlop , F. Dunstetter , N. Lorenzelli , A. Braslau
Nanometric Phenomena Induced By Laser, Ion and Cluster Beams E-Mrs '96 Spring Meeting Symposium K, 1997, Strasbourg, France. pp.481-502
Communication dans un congrès in2p3-00000530v1

Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire

Jl Rouviere , M. Arlery , R. Niebuhr , Kh Bachem , Olivier Briot
European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.161-166
Communication dans un congrès hal-00546205v1