|
The influence of illumination conditions in the measurement of built-in electric field at p–n junctions by 4D-STEM
Bruno C da Silva
,
Zahra S Momtaz
,
Lucas Bruas
,
Jean-Luc Rouviére
,
Hanako Okuno
Article dans une revue
hal-03832206v1
|
|
High-sensitivity mapping of magnetic induction fields with nanometer-scale resolution: comparison of off-axis electron holography and pixelated differential phase contrast
Victor Boureau
,
Michal Staňo
,
Jean-Luc Rouviere
,
Jean-Christophe Toussaint
,
Olivier Fruchart
Article dans une revue
hal-02919930v1
|
|
The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes
Bruno Daudin
,
Alexandra-Madalina Siladie
,
Marion Gruart
,
M. den Hertog
,
Catherine Bougerol
Article dans une revue
hal-03429491v1
|
|
Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy
Bruno Daudin
,
Fabrice Donatini
,
Catherine Bougerol
,
Bruno Gayral
,
Edith Bellet-Amalric
Article dans une revue
hal-02991749v1
|
|
Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure
D. V. Beznasyuk
,
P. Stepanov
,
Jean-Luc Rouvière
,
F. Glas
,
M. Verheijen
Article dans une revue
hal-02429832v1
|
|
Improved measurement of electric fields by nanobeam precession electron diffraction
L. Bruas
,
V. Boureau
,
A. Conlan
,
S. Martinie
,
Jean-Luc Rouviere
Article dans une revue
hal-03798997v1
|
|
Studying phase change memory devices by coupling scanning precession electron diffraction and energy dispersive X-ray analysis
Loïc Henry
,
Nicolas Bernier
,
Martin Jacob
,
Gabriele Navarro
,
Laurent Clément
Article dans une revue
hal-03493618v1
|
|
In Situ Transmission Electron Microscopy Analysis of Aluminum–Germanium Nanowire Solid-State Reaction
Khalil El Hajraoui
,
Minh Anh Luong
,
Eric Robin
,
Florian Brunbauer
,
Clemens Zeiner
Article dans une revue
hal-02910070v1
|
|
Direct comparison of off-axis holography and differential phase contrast for the mapping of electric fields in semiconductors by transmission electron microscopy
Benedikt Haas
,
Jean-Luc Rouviere
,
Victor Boureau
,
Remy Berthier
,
David Cooper
Article dans une revue
cea-02186458v1
|
|
Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy
Alexandre Concordel
,
Gwenolé Jacopin
,
Bruno Gayral
,
Núria Garro
,
Ana Cros
Article dans une revue
hal-02127433v1
|
|
Understanding the Crystallization Behavior of Surface-Oxidized GeTe Thin Films for Phase-Change Memory Application
Andrea Kolb
,
Nicolas Bernier
,
Eric Robin
,
Anass Benayad
,
Jean-Luc Rouviere
Article dans une revue
hal-02311359v1
|
|
Incommensurate grain boundary in silicon and the silver-ratio sequence
Frédéric Lançon
,
Nina Gunkelmann
,
Damien Caliste
,
Jean-Luc Rouvière
Article dans une revue
hal-02284426v1
|
|
In Situ Transmission Electron Microscopy Analysis of Copper–Germanium Nanowire Solid-State Reaction
Khalil El Hajraoui
,
Eric Robin
,
Clemens Zeiner
,
Alois Lugstein
,
Stéphanie Kodjikian
Article dans une revue
hal-02544426v1
|
|
Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain
Honggyu Kim
,
Yifei Meng
,
Ji-Hwan Kwon
,
Jean-Luc Rouviere
,
Jian Min Zuo
Article dans une revue
hal-02071865v1
|
|
Proposition of a model elucidating the AlN-on-Si (111) microstructure
N. Mante
,
S. Rennesson
,
E. Frayssinet
,
L. Largeau
,
F. Semond
Article dans une revue
hal-02322400v1
|
|
Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology
S. Reboh
,
R. Coquand
,
S. Barraud
,
N. Loubet
,
N. Bernier
Article dans une revue
hal-02071864v1
|
|
Comprehension of peculiar local emission behavior of InGaAs quantum well by colocalized nanocharacterization combining cathodoluminescence and electron microscopy techniques
Joyce Roque
,
Georges Beainy
,
Névine Rochat
,
Nicolas Bernier
,
Sylvain David
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2018, 36 (4), pp.042901. ⟨10.1116/1.5033363⟩
Article dans une revue
hal-01947865v1
|
|
Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition
T. Cerba
,
M. Martin
,
J. Moeyaert
,
S. David
,
J. Rouvière
Article dans une revue
hal-01954336v1
|
|
Graphene as a Mechanically Active, Deformable Two-Dimensional Surfactant
Sergio Vlaic
,
Nicolas Rougemaille
,
Alexandre Artaud
,
Vincent Renard
,
Loic Huder
Article dans une revue
hal-01781881v1
|
|
Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate
J. Roque
,
B. Haas
,
S. David
,
N. Rochat
,
N. Bernier
Article dans une revue
hal-01947882v1
|
|
Growth and structural properties of step-graded, high Sn content GeSn layers on Ge
J Aubin
,
J. Hartmann
,
A. Gassenq
,
J. Rouvière
,
Eric Robin
Semiconductor Science and Technology, 2017, 32 (9), pp.094006
Article dans une revue
hal-02045752v1
|
|
High-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffraction
David Cooper
,
Nicolas Bernier
,
Jean-Luc Rouviere
,
Jean-Luc Rouvière
,
Yun-Yu Wang
Applied Physics Letters, 2017, 110 (22), pp.223109
Article dans une revue
hal-01998271v1
|
|
High precision strain mapping of topological insulator HgTe/CdTe
Benedikt Haas
,
Candice Thomas
,
Pierre-Henri Jouneau
,
Nicolas Bernier
,
Tristan Meunier
Article dans une revue
hal-01980854v1
|
|
Peak separation method for sub-lattice strain analysis at atomic resolution: Application to InAs/GaSb superlattice
Honggyu Kim
,
Yifei Meng
,
Jean-Luc Rouviere
,
Jian-Min Zuo
Article dans une revue
hal-02071868v1
|
|
High quality epitaxial fluorine-doped SnO2 films by ultrasonic spray pyrolysis: Structural and physical property investigation
Shan-Ting Zhang
,
Jean-Luc Rouvière
,
Vincent Consonni
,
Hervé Roussel
,
Laetitia Rapenne
Article dans une revue
hal-01758851v1
|
|
Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements
B. Bonef
,
B. Haas
,
J-L. Rouvière
,
R. André
,
C. Bougerol
Article dans une revue
hal-01390785v1
|
|
Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope
David Cooper
,
Thibaud Denneulin
,
Nicolas Bernier
,
Armand Beche
,
Jean-Luc Rouviere
Article dans une revue
cea-01849438v1
|
|
InGaN nanowires with high InN molar fraction: growth, structural and optical properties
Xin Zhang
,
Hugo Lourenco-Martins
,
Sophie Meuret
,
Mathieu Kociak
,
Benedikt Haas
Article dans une revue
cea-01851934v1
|
|
Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model
Johan Pelloux-Prayer
,
Mikael Casse
,
Francois Triozon
,
Sylvain Barraud
,
Yann-Michel Niquet
Article dans une revue
cea-01851576v1
|
|
Growth mechanism of InGaN nanoumbrellas
Xin Zhang
,
Benedikt Haas
,
Jean-Luc Rouviere
,
Eric Robin
,
Bruno Daudin
Article dans une revue
cea-01851933v1
|
|
Towards a full retrieval of the deformation tensor F using convergent beam electron diffraction
Yannick Martin
,
Jean-Luc Rouviere
,
J. M. Zuo
,
Vincent Favre-Nicolin
Article dans une revue
cea-01851578v1
|
|
Solving difficult structures with electron diffraction
J. M. Zuo
,
Jean-Luc Rouvière
Article dans une revue
hal-01616541v1
|
|
Combining 2 nm Spatial Resolution and 0.02% Precision for Deformation Mapping of Semiconductor Specimens in a Transmission Electron Microscope by Precession Electron Diffraction
David Cooper
,
Nicolas Bernier
,
Jean-Luc Rouvière
Article dans une revue
hal-01588268v1
|
|
Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography
Y. Y. Wang
,
David Cooper
,
Jean-Luc Rouvière
,
C. E. Murray
,
N. Bernier
Article dans une revue
hal-01616542v1
|
|
The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires
Thomas Auzelle
,
Benedikt Haas
,
Albert Minj
,
Catherine Bougerol
,
Jean-Luc Rouviere
Article dans une revue
hal-02071872v1
|
|
Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography
Bastien Bonef
,
Lionel Gérard
,
Jean-Luc Rouvière
,
Adeline Grenier
,
Pierre-Henri Jouneau
Article dans une revue
hal-01132475v1
|
|
Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries
Thomas Auzelle
,
Benedikt Haas
,
Martien den Hertog
,
Jean-Luc Rouvière
,
Bruno Daudin
Article dans une revue
hal-01586122v1
|
|
Practical aspects of strain measurement in thin SiGe layers by (004) dark-field electron holography in Lorentz mode
Thibaud Denneulin
,
D. Cooper
,
J.L. Rouvière
Article dans une revue
hal-02071149v1
|
|
Strain mapping at the nanoscale using precession electron diffraction in transmission electron microscope with off axis camera
Matthieu M.P. Vigouroux
,
V. Delaye
,
N. N. Bernier
,
R. Cipro
,
D. Lafond
Article dans une revue
hal-01103079v1
|
|
Lattice and strain analysis of atomic resolution Z-contrast images based on template matching
Jian-Min Zuo
,
Amish Shah
,
Honggyu Kim
,
Yifei Meng
,
Wenpei Gao
Article dans une revue
hal-01972657v1
|
|
Digital model for X-ray diffraction with application to composition and strain determination in strained InAs/GaSb superlattices
Yifei Meng
,
Honggyu Kim
,
Jean-Luc Rouviere
,
Dieter Isheim
,
David Seidman
Article dans une revue
hal-02071157v1
|
|
Measuring Lattice Parameters and Local Rotation using Convergent Beam Electron Diffraction: One Step Further
Y. Martin
,
J.-M. Zuo
,
V. Favre-Nicolin
,
J.-L. Rouvière
Article dans une revue
hal-02071123v1
|
|
Microstructural void environment characterization by electron imaging in 45 nm technology node to link electromigration and copper microstructure
R. Galand
,
G. Brunetti
,
L. Arnaud
,
J.L. Rouviere
,
L. Clement
Article dans une revue
hal-00850231v1
|
|
The addition of strain in uniaxially strained transistors by both SiN contact etch stop layers and recessed SiGe sources and drains
Thibaud Denneulin
,
David Cooper
,
Jean-Michel Hartmann
,
Jean-Luc Rouvière
Article dans une revue
hal-02145343v1
|
|
Correlation of polarity and crystal structure with optoelectronic and transport properties of GaN/AlN/GaN nanowire sensors
Martien den Hertog
,
F. Gonzalez-Posada
,
Rudeesun Songmuang
,
Jean-Luc Rouviere
,
Thierry Fournier
Article dans une revue
hal-00863667v1
|
|
Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering
D. Jalabert
,
D. Pelloux-Gervais
,
A. Béché
,
J. Hartmann
,
P. Gergaud
physica status solidi (a), 2012, 209 (2), pp.262-265
Article dans une revue
hal-01965024v1
|
|
Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis
M.-I. Richard
,
J.-L. Rouvière
,
T.-S. Yoon
,
E. Holmström
,
Y.-H. Xie
Article dans une revue
hal-01811420v1
|
|
Hidden defects in silicon nanowires
Martien den Hertog
,
Cyril Cayron
,
Pascal Gentile
,
Florian Dhalluin
,
Fabrice Oehle
Article dans une revue
hal-00719753v1
|
|
Confirmation of the Domino-Cascade Model by LiFePO(4)/FePO(4) Precession Electron Diffraction
G. Brunetti
,
D. Robert
,
P. Bayle-Guillemaud
,
J.L. Rouviere
,
E.F. Rauch
Article dans une revue
hal-00664175v1
|
|
Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins
C. Cayron
,
M. den Hertog
,
L. Latu-Romain
,
C. Mouchet
,
C. Secouard
Journal of Applied Crystallography, 2009, 42, (2009), p1-11
Article dans une revue
hal-00394399v1
|
|
Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires
B. Salem
,
F. Dhalluin
,
T. Baron
,
H. Jamgotchian
,
F. Bedu
Materials Science and Engineering: B, 2009, 159-160, pp.83-86
Article dans une revue
hal-00453724v1
|
|
The morphology of silicon nanowires grown in the presence of trimethylaluminium
F. Oehler
,
P. Gentile
,
T. Baron
,
M. den Hertog
,
J.L. Rouviere
Nanotechnology, 2009, pp.20 (24): Art. No. 245602 JUN 17 2009
Article dans une revue
hal-00455406v1
|
|
Alternate dissociation of the screw dislocations in a (001) buried small-angle twist boundary in silicon
R. Bonnet
,
M. Loubradou
,
S. Youssef
,
J.L. Rouvière
,
F. Fournel
Philosophical Magazine, 2009, 89 (5), pp.413-434
Article dans une revue
hal-00389424v1
|
|
Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires
B. Salem
,
F. Dhalluin
,
T. Baron
,
H. Jamgotchian
,
F. Bedu
Materials Science and Engineering, 2009, pp.B 159-160 83-86
Article dans une revue
hal-00395832v1
|
|
Fabrication of Well-Organized and Densely Packed Si Nanopillars Containing SiGe Nanodots by Using Block Copolymer Templates
K. Aissou
,
T. Baron
,
M. Kogelschatz
,
M. den Hertog
,
J.L. Rouviere
Chemistry of Materials, 2008, pp.20 6183-6188
Article dans une revue
hal-00394788v1
|
|
Silicon nanowires grown in nanoporous alumina matrices on <100> oriented silicon substrates investigated by electron microscopy
T. David
,
D. Buttard
,
M. den Hertog
,
P. Gentile
,
T. Baron
Superlatice and Microstructures, 2008, pp.44 (4-5) October-November (2008) 354-361
Article dans une revue
hal-00394793v1
|
|
A new architecture for self-organized silicon nanowire growth integrated on a (100) silicon substrate
D. Buttard
,
T. David
,
P. Gentile
,
M. den Hertog
,
T. Baron
physica status solidi (a), 2008, pp.Vol 205, Issue 7, July (2008) 1606-1614
Article dans une revue
hal-00394787v1
|
|
Control of gold surface diffusion on Si nanowires
Martien den Hertog
,
Jean-Luc Rouvière
,
Florian Dhalluin
,
Pierre Desré
,
Pascal Gentile
Article dans une revue
hal-00394786v1
|
|
Crystal structure and band gap determination of HfO2 thin films
Marie Cheynet
,
Simone Pokrant
,
Frans Tichelaar
,
Jean-Luc Rouvière
Article dans une revue
hal-00354604v1
|
|
Critical condition for growth of silicon nanowires
Florian Dhalluin
,
Pierre J Desré
,
Martien den Hertog
,
Jean-Luc Rouviere
,
Pierre Ferret
Article dans une revue
hal-00394770v1
|
|
Quantitative analysis of HOLZ line splitting in CBED patterns of epitaxially strained layers
Florent Houdellier
,
Christian Roucau
,
L. Clement
,
J.L. Rouvière
,
Marie-José Casanove
Article dans une revue
hal-01707838v1
|
|
Strain distribution in nitride quantum dot multilayers
Virginie Chamard
,
T Schülli
,
M. Sztucki
,
T. H. Metzger
,
E. Sarigiannidou
Article dans une revue
hal-01253302v1
|
|
Growth and optical properties of GaN/AlN quantum wells
C. Adelmann
,
E. Sarigiannidou
,
D. Jalabert
,
Y. Hori
,
J.-L. Rouvière
Article dans une revue
hal-01975920v1
|
|
Confinement induced enhancement of the emission in Er-implanted Si/SiO2 quantum wells fabricated on SOI substrates
D. Sotta
,
V. Calvo
,
H. Ulmer-Tuffigo
,
N. Magnea
,
Emmanuel Hadji
Materials Science and Engineering: B, 2001, 81 (1-3), pp.43-45
Article dans une revue
cea-01996944v1
|
|
Ultra thin silicon films directly bonded onto silicon wafers
F. Fournel
,
H. Moriceau
,
N. Magnea
,
J. Eymery
,
J.L Rouvière
Article dans une revue
hal-01876883v1
|
|
Nanometric patterning with ultrathin twist bonded silicon wafers
F. Fournel
,
H. Moriceau
,
N. Magnea
,
J. Eymery
,
B Buttard
Article dans une revue
hal-01876895v1
|
|
Transmission electron microscopy structural characterisation of GaN layers grown on (0001) sapphire
Jl Rouviere
,
M. Arlery
,
B. Daudin
,
G. Feuillet
,
Olivier Briot
Materials Science and Engineering: B, 1997, 50, pp.61-71
Article dans une revue
hal-00546189v1
|
|
MOVPE growth and characterization of AlxGa1-xN
Sandra Ruffenach
,
Olivier Briot
,
Jl Rouviere
,
Bernard Gil
,
Roger Aulombard
Materials Science and Engineering: B, 1997, 50, pp.219-222
Article dans une revue
hal-00546775v1
|
|
Comparative study of hexagonal and cubic GaN growth by RF-MBE
G. Feuillet
,
F. Widmann
,
B. Daudin
,
J. Schuler
,
M. Arlery
Materials Science and Engineering: B, 1997, 50, pp.233-237
Article dans une revue
hal-00546192v1
|
|
Titanium Evolution Under Neutron Irradiation in NixC1-x/Ti Multilayers
B. Ballot
,
K. N'Guy
,
A. Menelle
,
J. Mimault
,
T. Girardeau
Article dans une revue
jpa-00254202v1
|
|
Extended synchrotron X-ray reflectivity study of a Sm-based layer buried into CdTe(001)
N. Boudet
,
J. Eymery
,
G. Renaud
,
J.L. Rouvière
,
J.Y. Veuillen
Article dans une revue
hal-01875058v1
|
|
ANALYSIS OF STRUCTURES OF SYMMETRICAL [001] TILT GRAIN BOUNDARIES IN SILICON AND GERMANIUM
J.-L. Rouviere
,
A. Bourret
Article dans une revue
jpa-00230313v1
|