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98

Jean-Luc_Rouviere_CEA_UGA_Grenoble_France


Journal articles72 documents

  • Bruno C da Silva, Zahra S Momtaz, Lucas Bruas, Jean-Luc Rouviére, Hanako Okuno, et al.. The influence of illumination conditions in the measurement of built-in electric field at p–n junctions by 4D-STEM. Applied Physics Letters, American Institute of Physics, 2022, 121 (12), pp.123503. ⟨10.1063/5.0104861⟩. ⟨hal-03832206⟩
  • Bruno Daudin, Fabrice Donatini, Catherine Bougerol, Bruno Gayral, Edith Bellet-Amalric, et al.. Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy. Nanotechnology, 2021, 32 (2), pp.025601. ⟨10.1088/1361-6528/abb6a5⟩. ⟨hal-02991749⟩
  • Bruno Daudin, Alexandra-Madalina Siladie, Marion Gruart, M. den Hertog, Catherine Bougerol, et al.. The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes. Nanotechnology, Institute of Physics, 2021, 32 (8), pp.085606. ⟨10.1088/1361-6528/abc780⟩. ⟨hal-03429491⟩
  • Victor Boureau, Michal Staňo, Jean-Luc Rouviere, Jean-Christophe Toussaint, Olivier Fruchart, et al.. High-sensitivity mapping of magnetic induction fields with nanometer-scale resolution: comparison of off-axis electron holography and pixelated differential phase contrast. Journal of Physics D: Applied Physics, IOP Publishing, 2021, 54 (8), pp.085001. ⟨10.1088/1361-6463/abc77d⟩. ⟨hal-02919930⟩
  • L. Bruas, V. Boureau, A. Conlan, S. Martinie, Jean-Luc Rouviere, et al.. Improved measurement of electric fields by nanobeam precession electron diffraction. Journal of Applied Physics, American Institute of Physics, 2020, 127 (20), pp.205703. ⟨10.1063/5.0006969⟩. ⟨hal-03798997⟩
  • Loïc Henry, Nicolas Bernier, Martin Jacob, Gabriele Navarro, Laurent Clément, et al.. Studying phase change memory devices by coupling scanning precession electron diffraction and energy dispersive X-ray analysis. Acta Materialia, Elsevier, 2020, 201, pp.72 - 78. ⟨10.1016/j.actamat.2020.09.033⟩. ⟨hal-03493618⟩
  • D. V. Beznasyuk, P. Stepanov, Jean-Luc Rouvière, F. Glas, M. Verheijen, et al.. Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure. Physical Review Materials, American Physical Society, 2020, 4 (7), pp.074607. ⟨10.1103/PhysRevMaterials.4.074607⟩. ⟨hal-02429832⟩
  • Khalil El Hajraoui, Minh Anh Luong, Eric Robin, Florian Brunbauer, Clemens Zeiner, et al.. In Situ Transmission Electron Microscopy Analysis of Aluminum–Germanium Nanowire Solid-State Reaction. Nano Letters, American Chemical Society, 2019, 19 (5), pp.2897-2904. ⟨10.1021/acs.nanolett.8b05171⟩. ⟨hal-02910070⟩
  • Benedikt Haas, Jean-Luc Rouviere, Victor Boureau, Remy Berthier, David Cooper. Direct comparison of off-axis holography and differential phase contrast for the mapping of electric fields in semiconductors by transmission electron microscopy. Ultramicroscopy, Elsevier, 2019, 198, pp.58-72. ⟨10.1016/j.ultramic.2018.12.003⟩. ⟨cea-02186458⟩
  • Frédéric Lançon, Nina Gunkelmann, Damien Caliste, Jean-Luc Rouvière. Incommensurate grain boundary in silicon and the silver-ratio sequence. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2019, 100 (11), ⟨10.1103/PhysRevB.100.115307⟩. ⟨hal-02284426⟩
  • Andrea Kolb, Nicolas Bernier, Eric Robin, Anass Benayad, Jean-Luc Rouviere, et al.. Understanding the Crystallization Behavior of Surface-Oxidized GeTe Thin Films for Phase-Change Memory Application. ACS Applied Electronic Materials, American Chemical Society, 2019, 1 (5), pp.701-710. ⟨10.1021/acsaelm.9b00070⟩. ⟨hal-02311359⟩
  • Alexandre Concordel, Gwenolé Jacopin, Bruno Gayral, Núria Garro, Ana Cros, et al.. Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, American Institute of Physics, 2019, 114 (17), pp.172101. ⟨10.1063/1.5094627⟩. ⟨hal-02127433⟩
  • Khalil El Hajraoui, Eric Robin, Clemens Zeiner, Alois Lugstein, Stéphanie Kodjikian, et al.. In Situ Transmission Electron Microscopy Analysis of Copper–Germanium Nanowire Solid-State Reaction. Nano Letters, American Chemical Society, 2019, 19 (12), pp.8365-8371. ⟨10.1021/acs.nanolett.9b01797⟩. ⟨hal-02544426⟩
  • J. Roque, B. Haas, S. David, N. Rochat, N. Bernier, et al.. Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate. Applied Physics Letters, American Institute of Physics, 2018, 112 (20), pp.202104. ⟨10.1063/1.5027163⟩. ⟨hal-01947882⟩
  • T. Cerba, M. Martin, J. Moeyaert, S. David, J. Rouvière, et al.. Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition. Thin Solid Films, Elsevier, 2018, 645, pp.5-9. ⟨10.1016/j.tsf.2017.10.024⟩. ⟨hal-01954336⟩
  • Sergio Vlaic, Nicolas Rougemaille, Alexandre Artaud, Vincent Renard, Loic Huder, et al.. Graphene as a Mechanically Active, Deformable Two-Dimensional Surfactant. Journal of Physical Chemistry Letters, American Chemical Society, 2018, 9 (10), pp.2523-2531. ⟨10.1021/acs.jpclett.8b00586⟩. ⟨hal-01781881⟩
  • Honggyu Kim, Yifei Meng, Ji-Hwan Kwon, Jean-Luc Rouviere, Jian Min Zuo. Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain. International Union of Crystallography journal, International Union of Crystallography 2018, 5 (1), pp.67-72. ⟨10.1107/S2052252517016219⟩. ⟨hal-02071865⟩
  • N. Mante, S. Rennesson, E. Frayssinet, L. Largeau, F. Semond, et al.. Proposition of a model elucidating the AlN-on-Si (111) microstructure. Journal of Applied Physics, American Institute of Physics, 2018, 123 (21), pp.215701. ⟨10.1063/1.5017550⟩. ⟨hal-02322400⟩
  • S. Reboh, R. Coquand, S. Barraud, N. Loubet, N. Bernier, et al.. Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology. Applied Physics Letters, American Institute of Physics, 2018, 112 (5), pp.051901. ⟨10.1063/1.5010997⟩. ⟨hal-02071864⟩
  • Joyce Roque, Georges Beainy, Névine Rochat, Nicolas Bernier, Sylvain David, et al.. Comprehension of peculiar local emission behavior of InGaAs quantum well by colocalized nanocharacterization combining cathodoluminescence and electron microscopy techniques. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2018, 36 (4), pp.042901. ⟨10.1116/1.5033363⟩. ⟨hal-01947865⟩
  • Shan-Ting Zhang, Jean-Luc Rouvière, Vincent Consonni, Hervé Roussel, Laetitia Rapenne, et al.. High quality epitaxial fluorine-doped SnO2 films by ultrasonic spray pyrolysis: Structural and physical property investigation. Materials & Design, Elsevier, 2017, 132, pp.518-525. ⟨10.1016/j.matdes.2017.07.037⟩. ⟨hal-01758851⟩
  • J Aubin, J. Hartmann, A. Gassenq, J. Rouvière, Eric Robin, et al.. Growth and structural properties of step-graded, high Sn content GeSn layers on Ge. Semiconductor Science and Technology, IOP Publishing, 2017, 32 (9), pp.094006. ⟨hal-02045752⟩
  • David Cooper, Nicolas Bernier, Jean-Luc Rouviere, Jean-Luc Rouvière, Yun-Yu Wang, et al.. High-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffraction. Applied Physics Letters, American Institute of Physics, 2017, 110 (22), pp.223109. ⟨hal-01998271⟩
  • Honggyu Kim, Yifei Meng, Jean-Luc Rouviere, Jian-Min Zuo. Peak separation method for sub-lattice strain analysis at atomic resolution: Application to InAs/GaSb superlattice. Micron, Elsevier, 2017, 92, pp.6-12. ⟨10.1016/j.micron.2016.10.003⟩. ⟨hal-02071868⟩
  • Benedikt Haas, Candice Thomas, Pierre-Henri Jouneau, Nicolas Bernier, Tristan Meunier, et al.. High precision strain mapping of topological insulator HgTe/CdTe. Applied Physics Letters, American Institute of Physics, 2017, 110 (26), pp.263102. ⟨10.1063/1.4989822⟩. ⟨hal-01980854⟩
  • Yannick Martin, Jean-Luc Rouviere, J. M. Zuo, Vincent Favre-Nicolin. Towards a full retrieval of the deformation tensor F using convergent beam electron diffraction. Ultramicroscopy, Elsevier, 2016, 160, pp.64-73. ⟨10.1016/j.ulisamic.2014.12.009⟩. ⟨cea-01851578⟩
  • B. Bonef, B. Haas, J-L. Rouvière, R. André, C. Bougerol, et al.. Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements. Journal of Microscopy, Wiley, 2016, 262 (2), pp.178 - 182. ⟨10.1111/jmi.12340⟩. ⟨hal-01390785⟩
  • Xin Zhang, Hugo Lourenco-Martins, Sophie Meuret, Mathieu Kociak, Benedikt Haas, et al.. InGaN nanowires with high InN molar fraction: growth, structural and optical properties. Nanotechnology, Institute of Physics, 2016, 27 (19), pp.195704. ⟨10.1088/0957-4484/27/19/195704⟩. ⟨cea-01851934⟩
  • Xin Zhang, Benedikt Haas, Jean-Luc Rouviere, Eric Robin, Bruno Daudin. Growth mechanism of InGaN nanoumbrellas. Nanotechnology, Institute of Physics, 2016, 27 (45), pp.455603. ⟨10.1088/0957-4484/27/45/455603⟩. ⟨cea-01851933⟩
  • Johan Pelloux-Prayer, Mikael Casse, Francois Triozon, Sylvain Barraud, Yann-Michel Niquet, et al.. Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model. Solid-State Electronics, Elsevier, 2016, 125, pp.175-181. ⟨10.1016/j.sse.2016.09.002⟩. ⟨cea-01851576⟩
  • David Cooper, Thibaud Denneulin, Nicolas Bernier, Armand Beche, Jean-Luc Rouviere. Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope. Micron, Elsevier, 2016, 80, pp.145-165. ⟨10.1016/j.micron.2015.09.001⟩. ⟨cea-01849438⟩
  • Thomas Auzelle, Benedikt Haas, Albert Minj, Catherine Bougerol, Jean-Luc Rouviere, et al.. The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires. Journal of Applied Physics, American Institute of Physics, 2015, 117 (24), pp.245303. ⟨10.1063/1.4923024⟩. ⟨hal-02071872⟩
  • Bastien Bonef, Lionel Gérard, Jean-Luc Rouvière, Adeline Grenier, Pierre-Henri Jouneau, et al.. Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography. Applied Physics Letters, 2015, 106 (5), pp.051904. ⟨10.1063/1.4907648⟩. ⟨hal-01132475⟩
  • J. M. Zuo, Jean-Luc Rouvière. Solving difficult structures with electron diffraction. International Union of Crystallography journal, International Union of Crystallography 2015, 2, pp.7-8. ⟨10.1107/s2052252514026797⟩. ⟨hal-01616541⟩
  • Y. Y. Wang, David Cooper, Jean-Luc Rouvière, C. E. Murray, N. Bernier, et al.. Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography. Applied Physics Letters, American Institute of Physics, 2015, 106 (4), pp.042104. ⟨10.1063/1.4906513⟩. ⟨hal-01616542⟩
  • David Cooper, Nicolas Bernier, Jean-Luc Rouvière. Combining 2 nm Spatial Resolution and 0.02% Precision for Deformation Mapping of Semiconductor Specimens in a Transmission Electron Microscope by Precession Electron Diffraction. Nano Letters, American Chemical Society, 2015, 15 (8), pp.5289-5294. ⟨10.1021/acs.nanolett.5b01614⟩. ⟨hal-01588268⟩
  • Thomas Auzelle, Benedikt Haas, Martien den Hertog, Jean-Luc Rouvière, Bruno Daudin, et al.. Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries. Applied Physics Letters, American Institute of Physics, 2015, 107 (5), pp.051904. ⟨10.1063/1.4927826⟩. ⟨hal-01586122⟩
  • Thibaud Denneulin, D. Cooper, J.L. Rouvière. Practical aspects of strain measurement in thin SiGe layers by (004) dark-field electron holography in Lorentz mode. Micron, Elsevier, 2014, 62, pp.52-65. ⟨10.1016/j.micron.2014.02.017⟩. ⟨hal-02071149⟩
  • Matthieu M.P. Vigouroux, V. Delaye, N. N. Bernier, R. Cipro, D. Lafond, et al.. Strain mapping at the nanoscale using precession electron diffraction in transmission electron microscope with off axis camera. Applied Physics Letters, American Institute of Physics, 2014, 105 (19), pp.191906. ⟨10.1063/1.4901435⟩. ⟨hal-01103079⟩
  • Jian-Min Zuo, Amish Shah, Honggyu Kim, Yifei Meng, Wenpei Gao, et al.. Lattice and strain analysis of atomic resolution Z-contrast images based on template matching. Ultramicroscopy, Elsevier, 2014, 136, pp.50-60. ⟨10.1016/j.ultramic.2013.07.018⟩. ⟨hal-01972657⟩
  • Yifei Meng, Honggyu Kim, Jean-Luc Rouviere, Dieter Isheim, David Seidman, et al.. Digital model for X-ray diffraction with application to composition and strain determination in strained InAs/GaSb superlattices. Journal of Applied Physics, American Institute of Physics, 2014, 116 (1), pp.013513. ⟨10.1063/1.4887078⟩. ⟨hal-02071157⟩
  • R. Galand, G. Brunetti, L. Arnaud, J.L. Rouviere, L. Clement, et al.. Microstructural void environment characterization by electron imaging in 45 nm technology node to link electromigration and copper microstructure. Microelectronic Engineering, Elsevier, 2013, 106, pp.168-171. ⟨10.1016/j.mee.2013.01.018⟩. ⟨hal-00850231⟩
  • Y. Martin, J.-M. Zuo, V. Favre-Nicolin, J.-L. Rouvière. Measuring Lattice Parameters and Local Rotation using Convergent Beam Electron Diffraction: One Step Further. Microscopy and Microanalysis, Cambridge University Press (CUP), 2013, 19 (S2), pp.710-711. ⟨10.1017/S1431927613005540⟩. ⟨hal-02071123⟩
  • Thibaud Denneulin, David Cooper, Jean-Michel Hartmann, Jean-Luc Rouvière. The addition of strain in uniaxially strained transistors by both SiN contact etch stop layers and recessed SiGe sources and drains. Journal of Applied Physics, American Institute of Physics, 2012, 112 (9), pp.094314. ⟨10.1063/1.4764045⟩. ⟨hal-02145343⟩
  • D. Jalabert, D. Pelloux-Gervais, A. Béché, J. Hartmann, P. Gergaud, et al.. Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering. physica status solidi (a), Wiley, 2012, 209 (2), pp.262-265. ⟨hal-01965024⟩
  • Martien den Hertog, F. Gonzalez-Posada, Rudeesun Songmuang, Jean-Luc Rouviere, Thierry Fournier, et al.. Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors. Nano Letters, American Chemical Society, 2012, 12, pp.5691. ⟨10.1021/nl302890f|⟩. ⟨hal-00863667⟩
  • G. Brunetti, D. Robert, P. Bayle-Guillemaud, J.L. Rouviere, E.F. Rauch, et al.. Confirmation of the Domino-Cascade Model by LiFePO(4)/FePO(4) Precession Electron Diffraction. Chemistry of Materials, 2011, 23 (20), pp.4515-4524. ⟨10.1021/cm201783z⟩. ⟨hal-00664175⟩
  • M.-I. Richard, J.-L. Rouvière, T.-S. Yoon, E. Holmström, Y.-H. Xie, et al.. Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2011, 84 (7), pp.075314. ⟨10.1103/PhysRevB.84.075314⟩. ⟨hal-01811420⟩
  • Martien den Hertog, Cyril Cayron, Pascal Gentile, Florian Dhalluin, Fabrice Oehle, et al.. Hidden defects in silicon nanowires. Nanotechnology, Institute of Physics, 2011, 23, pp.025701. ⟨10.1088/0957-4484/23/2/025701⟩. ⟨hal-00719753⟩
  • B. Salem, F. Dhalluin, T. Baron, H. Jamgotchian, F. Bedu, et al.. Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires. Materials Science and Engineering, Elsevier, 2009, pp.B 159-160 83-86. ⟨hal-00395832⟩
  • C. Cayron, M. den Hertog, L. Latu-Romain, C. Mouchet, C. Secouard, et al.. Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins. Journal of Applied Crystallography, International Union of Crystallography, 2009, 42, (2009), p1-11. ⟨hal-00394399⟩
  • F. Oehler, P. Gentile, T. Baron, M. den Hertog, J.L. Rouviere, et al.. The morphology of silicon nanowires grown in the presence of trimethylaluminium. Nanotechnology, Institute of Physics, 2009, pp.20 (24): Art. No. 245602 JUN 17 2009. ⟨hal-00455406⟩
  • B. Salem, F. Dhalluin, T. Baron, H. Jamgotchian, F. Bedu, et al.. Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires. Materials Science and Engineering: B, Elsevier, 2009, 159-160, pp.83-86. ⟨hal-00453724⟩
  • R. Bonnet, M. Loubradou, S. Youssef, J.L. Rouvière, F. Fournel. Alternate dissociation of the screw dislocations in a (001) buried small-angle twist boundary in silicon. Philosophical Magazine, Taylor & Francis, 2009, 89 (5), pp.413-434. ⟨hal-00389424⟩
  • Martien den Hertog, Jean-Luc Rouvière, Florian Dhalluin, Pierre Desré, Pascal Gentile, et al.. Control of gold surface diffusion on Si nanowires. Nano Letters, American Chemical Society, 2008, 8, pp.1544-1550. ⟨10.1021/nl073356i⟩. ⟨hal-00394786⟩
  • K. Aissou, T. Baron, M. Kogelschatz, M. den Hertog, J.L. Rouviere, et al.. Fabrication of Well-Organized and Densely Packed Si Nanopillars Containing SiGe Nanodots by Using Block Copolymer Templates. Chemistry of Materials, American Chemical Society, 2008, pp.20 6183-6188. ⟨hal-00394788⟩
  • T. David, D. Buttard, M. den Hertog, P. Gentile, T. Baron, et al.. Silicon nanowires grown in nanoporous alumina matrices on <100> oriented silicon substrates investigated by electron microscopy. Superlatice and Microstructures, 2008, pp.44 (4-5) October-November (2008) 354-361. ⟨hal-00394793⟩
  • D. Buttard, T. David, P. Gentile, M. den Hertog, T. Baron, et al.. A new architecture for self-organized silicon nanowire growth integrated on a (100) silicon substrate. physica status solidi (a), Wiley, 2008, pp.Vol 205, Issue 7, July (2008) 1606-1614. ⟨hal-00394787⟩
  • Marie Cheynet, Simone Pokrant, Frans Tichelaar, Jean-Luc Rouvière. Crystal structure and band gap determination of HfO2 thin films. Journal of Applied Physics, American Institute of Physics, 2007, 101, pp.54101. ⟨10.1063/1.2697551⟩. ⟨hal-00354604⟩
  • Florian Dhalluin, Pierre J Desré, Martien den Hertog, Jean-Luc Rouviere, Pierre Ferret, et al.. Critical condition for growth of silicon nanowires. Journal of Applied Physics, American Institute of Physics, 2007, 102 (9), pp.094906. ⟨10.1063/1.2811935⟩. ⟨hal-00394770⟩
  • Florent Houdellier, Christian Roucau, L. Clement, J.L. Rouvière, Marie-José Casanove. Quantitative analysis of HOLZ line splitting in CBED patterns of epitaxially strained layers. Ultramicroscopy, Elsevier, 2006, 106 (10), pp.951 - 959. ⟨10.1016/j.ultramic.2006.04.011⟩. ⟨hal-01707838⟩
  • Virginie Chamard, T Schülli, M. Sztucki, T. H. Metzger, E. Sarigiannidou, et al.. Strain distribution in nitride quantum dot multilayers. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2004, 69, pp.125327. ⟨10.1103/PhysRevB.69.125327⟩. ⟨hal-01253302⟩
  • C. Adelmann, E. Sarigiannidou, D. Jalabert, Y. Hori, J.-L. Rouvière, et al.. Growth and optical properties of GaN/AlN quantum wells. Applied Physics Letters, American Institute of Physics, 2003, 82 (23), pp.4154-4156. ⟨10.1063/1.1581386⟩. ⟨hal-01975920⟩
  • D. Sotta, V. Calvo, H. Ulmer-Tuffigo, N. Magnea, Emmanuel Hadji, et al.. Confinement induced enhancement of the emission in Er-implanted Si/SiO2 quantum wells fabricated on SOI substrates. Materials Science and Engineering: B, Elsevier, 2001, 81 (1-3), pp.43-45. ⟨cea-01996944⟩
  • F. Fournel, H. Moriceau, N. Magnea, J. Eymery, J.L Rouvière, et al.. Ultra thin silicon films directly bonded onto silicon wafers. Materials Science and Engineering: B, Elsevier, 2000, 73 (1-3), pp.42 - 46. ⟨10.1016/S0921-5107(99)00431-6⟩. ⟨hal-01876883⟩
  • F. Fournel, H. Moriceau, N. Magnea, J. Eymery, B Buttard, et al.. Nanometric patterning with ultrathin twist bonded silicon wafers. Thin Solid Films, Elsevier, 2000, 380 (1-2), pp.10 - 14. ⟨10.1016/S0040-6090(00)01460-7⟩. ⟨hal-01876895⟩
  • Jl Rouviere, M. Arlery, B. Daudin, G. Feuillet, Olivier Briot. Transmission electron microscopy structural characterisation of GaN layers grown on (0001) sapphire. Materials Science and Engineering: B, Elsevier, 1997, 50, pp.61-71. ⟨hal-00546189⟩
  • G. Feuillet, F. Widmann, B. Daudin, J. Schuler, M. Arlery, et al.. Comparative study of hexagonal and cubic GaN growth by RF-MBE. Materials Science and Engineering: B, Elsevier, 1997, 50, pp.233-237. ⟨hal-00546192⟩
  • Sandra Ruffenach, Olivier Briot, Jl Rouviere, Bernard Gil, Roger Aulombard. MOVPE growth and characterization of AlxGa1-xN. Materials Science and Engineering: B, Elsevier, 1997, 50, pp.219-222. ⟨hal-00546775⟩
  • B. Ballot, K. N'Guy, A. Menelle, J. Mimault, T. Girardeau, et al.. Titanium Evolution Under Neutron Irradiation in NixC1-x/Ti Multilayers. Journal de Physique IV Proceedings, EDP Sciences, 1996, 06 (C2), pp.C2-171-C2-176. ⟨10.1051/jp4:1996224⟩. ⟨jpa-00254202⟩
  • N. Boudet, J. Eymery, G. Renaud, J.L. Rouvière, J.Y. Veuillen, et al.. Extended synchrotron X-ray reflectivity study of a Sm-based layer buried into CdTe(001). Surface Science, Elsevier, 1995, 327 (3), pp.L515 - L520. ⟨10.1016/0039-6028(95)00034-8⟩. ⟨hal-01875058⟩
  • J.-L. Rouviere, A. Bourret. ANALYSIS OF STRUCTURES OF SYMMETRICAL [001] TILT GRAIN BOUNDARIES IN SILICON AND GERMANIUM. Journal de Physique Colloques, 1990, 51 (C1), pp.C1-329-C1-334. ⟨10.1051/jphyscol:1990152⟩. ⟨jpa-00230313⟩

Conference papers24 documents

  • Tiphaine Cerba, Mickaël Martin, Jeremy Moeyaert, Reynald Alcotte, Bassem Salem, et al.. InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOCVD for the fabrication of InAs FINFET. 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 2018), Jun 2018, Nara, Japan. ⟨hal-01954906⟩
  • J. Hidalgo, T. Delahaye, G. Leturcq, Jean-Luc Rouviere. Apport du couplage broyage/ dissolution sur la dissolution d'oxydes réfractaires. Journée scientifique de Marcoule 2018 (JSM 2018), 2018, Bagnols sur cèze, France. ⟨cea-02338633⟩
  • T. Cerba, M. Martin, J. Moeyaert, S. David, J.-L. Rouvière, et al.. Anti-phase boundary free GaSb layers grown on (001)-Si substrates by Metal Organic Chemical Vapor Deposition. 17th European Workshop on Metalorganic Vapour Phase Epitaxy (EW-MOVPE17), 2017, grenoble, France. ⟨hal-01891389⟩
  • T. Cerba, M. Martin, J. Moeyaert, S. David, J.-L. Rouvière, et al.. Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications. E-MRS Fall meeting, Symposium M, 2017, Warsaw, Poland. ⟨hal-01905730⟩
  • Tiphaine Cerba, Mickaël Martin, Jeremy Moeyaert, Sylvain David, Jean-Luc Rouvière, et al.. Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications. 2017 EMRS Fall Meeting, 2017, Warsaw, Poland. ⟨hal-01891383⟩
  • J. Pelloux-Prayer, M. Cassé, S. Barraud, F. Triozon, Z. Zeng, et al.. Transport in TriGate nanowire FET: Cross-section effect at the nanometer scale. 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2016, Burlingame, France. pp.1-2. ⟨hal-02143469⟩
  • Fabio Agnese, Aurélie Lefrançois, Stéphanie Pouget, Louis Vaure, Ourania Makrygenni, et al.. Investigating the Nucleation and Growth of Quaternary Cu2ZnSnS4Nanocrystals. European Microscopy Congress 2016, Aug 2016, Lyon, France. ⟨10.1002/9783527808465.EMC2016.5986⟩. ⟨hal-03805183⟩
  • J. Pelloux-Prayer, M. Cassé, S. Barraud, P. Nguyen, M. Koyama, et al.. Study of the piezoresistive properties of NMOS and PMOS Ω-gate SOI nanowire transistors: Scalability effects and high stress level. 2014 IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, France. pp.20.5.1-20.5.4. ⟨hal-02138872⟩
  • T. Baron, F. Dhalluin, B. Salem, B. Salhi, H. Abed, et al.. Study of Si Nanowires Growth by CVD-VLS and Physical Properties. 216th ECS Meeting in Vienna, 2009, Vienne, Austria. ⟨hal-00461113⟩
  • C. Agraffeil, G. Gay, T. Baron, B. Salhi, M. Kogelschatz, et al.. Formation Study of Organized Nanodots and Nanowires through Copolymer Diblock Technology. A2 - Nanotechnology General Session 216th ECS Meeting, 2009, Vienne, Austria. ⟨hal-00461111⟩
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  • F. Dhalluin, M. den Hertog, P. Gentile, P. Ferret, J.L. Rouviere. Croissance VLS de nanofils de Si de diamètre inférieur à 10 nm. GDR Nanofils, 2007, Ecully, France. ⟨hal-00396923⟩
  • M.C. Cheynet, S. Pokrant, F. Tichelaar, J.L. Rouvière. Investigation de films minces d'HfO2 par HRTEM et EELS (poster). Xème colloque de la Société Française des Microscopies, Jun 2007, Grenoble, France. ⟨hal-00214154⟩
  • P. Gentile, T. David, D. Buttard, M. den Hertog, J.L. Rouviere, et al.. Small-diameter silicon nanowires growth by CVD Au catalyzed. E-MRS, 2007, strasbourg, France. ⟨hal-00395911⟩
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Books1 document

  • Benedikt Haas, Robert Mcleod, Thomas Auzelle, Bruno Daudin, J. Eymery, et al.. European Microscopy Congress 2016: Proceedings. Wiley-VCH Verlag GmbH & Co. KGaA, 2016. ⟨hal-02143427⟩

Preprints, Working Papers, ...1 document

  • David N. Cooper, Béché Armand, Martien den Hertog, Aurélien Masseboeuf, Jean-Luc Rouviere, et al.. Off-Axis Electron Holography for Field Mapping in the semiconductor Industry. 2010. ⟨hal-00508681⟩