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Analytical Modeling of Alpha-Particle Emission Rate at Wafer-Level

 Sébastien Martinie , Jean-Luc Autran , Daniela Munteanu , Frédéric Wrobel , Michael Gedion , et al.
IEEE Transactions on Nuclear Science, 2011, 58 (6, 1), pp.2798-2803. ⟨10.1109/TNS.2011.2170851⟩
Article dans une revue hal-01430100v1

Technology Downscaling Worsening Radiation Effects in Bulk: SOI to the Rescue

 Philippe Roche , Jean-Luc Autran , Gilles Gasiot , Daniela Munteanu
2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2013, Washington, United States. ⟨10.1109/IEDM.2013.6724728⟩
Communication dans un congrès hal-01430081v1

Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

 K. Nehari , N. Cavassilas , Jean-Luc Autran , M. Bescond , Daniela Munteanu , et al.
Solid-State Electronics, 2006, 50 (4), pp.716-721. ⟨10.1016/j.sse.2006.03.041⟩
Article dans une revue istex hal-02132134v1

Real-Time Soft-Error Testing of 40nm SRAMs

 Jean-Luc Autran , S. Serre , Daniela Munteanu , S. Martinie , S. Semikh , et al.
2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012, Anaheim, CA, United States. ⟨10.1109/IRPS.2012.6241814⟩
Communication dans un congrès hal-01430086v1

A Review of Real-Time Soft-Error Rate Measurements in Electronic Circuits

 Jean-Luc Autran , Daniela Munteanu , S. Serre , S. Sauze
2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012, Anaheim, CA, United States. ⟨10.1109/IRPS.2012.6241843⟩
Communication dans un congrès hal-01430087v1
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Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation

 Daniela Munteanu , Jean-Luc Autran , S. Moindjie
Microelectronics Reliability, 2017, 76 (SI), pp.719-724. ⟨10.1016/j.microrel.2017.07.040⟩
Article dans une revue hal-01693979v1
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Accurate Resolution of Time-Dependent and Circuit-Coupled Charge Transport Equations: 1-D Case Applied to 28-nm FD-SOI Devices

 Victor Malherbe , Gilles Gasiot , Thomas Thery , Jean-Luc Autran , Philippe Roche
IEEE Transactions on Nuclear Science, 2018, 65 (1), pp.331-338. ⟨10.1109/TNS.2017.2774960⟩
Article dans une revue hal-02111080v1

Computational Modeling and Monte Carlo Simulation of Soft Errors in Flash Memories

 Jean-Luc Autran , Daniela Munteanu , Philippe Roche , Gilles Gasiot
J. Awrejcewicz. Computational and Numerical Simulations, INTECH, pp.367-392, 2014, 978-953-51-1220-4. ⟨10.5772/57220⟩
Chapitre d'ouvrage hal-02119483v1

Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation

 Daniela Munteanu , Jean-Luc Autran , Sebastien Martinie
A. Hashim. Nanowires - Implementations and Applications, INTECH, pp.201-222, 2011, 978-953-307-563-1. ⟨10.5772/16827⟩
Chapitre d'ouvrage hal-02121221v1

Poly-gate replacement through contact hole (PRETCH): A new method for high-K/metal gate and multi-oxide implementation on chip

 S Harrison , P Coronel , A Cros , R Cerutti , F Leverd , et al.
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, Unknown, Unknown Region. pp.291-294, ⟨10.1109/IEDM.2004.1419136⟩
Communication dans un congrès hal-01759469v1

Behavioral modeling of SRIM tables for numerical simulation

 S. Martinie , T. Saad-Saoud , S. Moindjie , Daniela Munteanu , Jean-Luc Autran
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2014, 322, pp.2-6. ⟨10.1016/j.nimb.2013.12.023⟩
Article dans une revue hal-01430076v1

Real-time soft-error rate measurements: A review

 Jean-Luc Autran , Daniela Munteanu , P. Roche , G. Gasiot
Microelectronics Reliability, 2014, 54 (8), pp.1455-1476. ⟨10.1016/j.microrel.2014.02.031⟩
Article dans une revue hal-01430077v1

Experimental Investigation on the Quasi-Ballistic Transport: Part II-Backscattering Coefficient Extraction and Link With the Mobility

 Vincent Barral , Thierry Poiroux , Daniela Munteanu , Jean-Luc Autran , Simon Deleonibus
IEEE Transactions on Electron Devices, 2009, 56 (3), pp.420-430. ⟨10.1109/TED.2008.2011682⟩
Article dans une revue hal-01430104v1

3-D Numerical Simulation of Bipolar Amplification in Junctionless Double-Gate MOSFETs under Heavy-Ion Irradiation

 Daniela Munteanu , Jean-Luc Autran
12th European Workshop on Radiation and its Effects on Components and Systems (RADECS 2011), Sep 2011, Sevilla, Spain. pp.73-76, ⟨10.1109/RADECS.2011.6131370⟩
Communication dans un congrès hal-04386582v1

A GPU/CUDA Implementation of the Collection-Diffusion Model to Compute SER of Large Area and Complex Circuits

 Jean-Luc Autran , Slawosz Uznanski , Sebastien Martinie , Philippe Roche , Gilles Gasiot , et al.
International Conference on Integrated Circuit Design and Technology (ICICDT 2010), Jun 2010, Grenoble, France. pp.67-70, ⟨10.1109/ICICDT.2010.5510293⟩
Communication dans un congrès hal-04393640v1

Investigation of 30nm Gate-All-Around MOSFET Sensitivity to Heavy Ions: a 3-D Simulation Study

 K. Castellani-Coulié , Daniela Munteanu , Jean-Luc Autran , V. Ferlet-Cavrois , P. Paillet , et al.
2005 8th European Conference on Radiation and Its Effects on Components and Systems, Sep 2005, Cap d'Agde, France. pp.G1-1-G1-8
Communication dans un congrès hal-02025580v1
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Characterization of atmospheric muons at sea level using a cosmic ray telescope

 Jean-Luc Autran , Daniela Munteanu , Tarek Saad Saoud , Soilihi Moindjie
Nucl.Instrum.Meth.A, 2018, 903, pp.77-84. ⟨10.1016/j.nima.2018.06.038⟩
Article dans une revue hal-01846825v1
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Impact of Total Ionizing Dose on the alpha-Soft Error Rate in FDSOI 28 nm SRAMs

 Soilihi Moindjie , Daniela Munteanu , Jean-Luc Autran , Victor Malherbe , Gilles Gasiot , et al.
Microelectronics Reliability, 2023, pp.115181. ⟨10.1016/j.microrel.2023.115181⟩
Article dans une revue hal-04194288v1
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New insights into diffusion-collection modeling of radiation-induced charge in semiconductor devices

 Jean-Luc Autran , Daniela Munteanu
Journal of Applied Physics, 2023, 134 (17), pp.175701. ⟨10.1063/5.0156698⟩
Article dans une revue hal-04241142v1
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Terrestrial Neutron-Induced Single Events in GaN

 Daniela Munteanu , Jean-Luc Autran
Microelectronics Reliability, 2019, 100-101, pp.113357. ⟨10.1016/j.microrel.2019.06.049⟩
Article dans une revue hal-02263526v1

Particle Monte Carlo Modeling of Single-Event Transient Current and Charge Collection in Integrated Circuits

 Jean-Luc Autran , Maximilien Glorieux , Daniela Munteanu , Sylvain Clerc , Gilles Gasiot , et al.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2014), Sep 2014, Berlin, Germany
Communication dans un congrès hal-04373126v1
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Modeling and Simulation of Single-Event Effects in Digital Devices and ICs

 Daniela Munteanu , Jean-Luc Autran
10th European Workshop on Radiation and its Effects on Components and Systems (RADECS 2007), Sep 2007, Deauville, France
Communication dans un congrès hal-04388670v1

Modeling of energy bands in quantum dot superlattices for solar cell applications

 Daniela Munteanu , Jean-Luc Autran
8th Symposium SiO2, Advanced Dielectrics and Related Devices (2010), Jun 2010, Varenna, Italy
Communication dans un congrès hal-04393615v1
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Multi-scale, Multi-physics Modeling and Simulation of Single Event Effects in Digital Electronics: from Particles to Systems

 Jean-Luc Autran , Daniela Munteanu
IEEE Transactions on Nuclear Science, 2024, 71 (1), pp.31-66. ⟨10.1109/TNS.2023.3337288⟩
Article dans une revue hal-04333942v1

Radiation Characterization of a Backside-Illuminated P-Type Photo-MOS Pixel With Gamma Rays and Fusion-Induced Neutrons

 Victor Malherbe , Francois Roy , Olivier Nier , Thomas Dalleau , Serge de Paoli , et al.
IEEE Transactions on Nuclear Science, 2022, 69 (3), pp.534-541. ⟨10.1109/TNS.2022.3148925⟩
Article dans une revue hal-04138209v1
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On-Orbit Upset Rate Prediction at Advanced Technology Nodes: a 28 nm FD-SOI Case Study

 Victor Malherbe , Gilles Gasiot , Dimitri Soussan , Jean-Luc Autran , Philippe Roche
IEEE Transactions on Nuclear Science, 2017, 64 (1, 1), pp.449-456. ⟨10.1109/TNS.2016.2634604⟩
Article dans une revue hal-01694468v1

A New Unified Compact Model for Quasi-Ballistic Transport: Application to the Analysis of Circuit Performances of a Double-Gate Architecture

 S. Martinie , Daniela Munteanu , G. Le Carval , Jean-Luc Autran
SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2008, Unknown, Unknown Region. pp.377+, ⟨10.1109/SISPAD.2008.4648316⟩
Communication dans un congrès hal-01759430v1

Experimental determination of the channel backscattering coefficient on 10-70 nm-metal-gate, Double-Gate transistors

 Vincent Barral , T. Poiroux , M. Vinet , J. Widiez , B. Previtali , et al.
Solid-State Electronics, 2007, 51 (4), pp.537-542. ⟨10.1016/j.sse.2007.02.016⟩
Article dans une revue istex hal-01759440v1

Investigating the Single-Event-Transient Sensitivity of 65 nm Clock Trees with Heavy Ion Irradiation and Monte-Carlo Simulation

 Victor Malherbe , Gilles Gasiot , Sylvain Clerc , Fady Abouzeid , Jean-Luc Autran , et al.
2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016, Unknown, Unknown Region
Communication dans un congrès hal-01435110v1

Proton Flux Anisotropy in the Atmosphere: Experiment and Modeling

 Frédéric Wrobel , Jean-Roch Vaillé , Denis Pantel , Luigi Dilillo , Jean-Marc J.-M. Galliere , et al.
RADECS: European Conference on Radiation and Its Effects on Components and Systems, Sep 2012, Biarritz, France. pp.1-4
Communication dans un congrès lirmm-00805150v1
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